公开(公告)号：US20190013179A1

公开(公告)日：2019-01-10

申请号：US16069796

申请日：2016-03-18

Applicant: HITACHI, LTD.

Inventor： Tetsufumi KAWAMURA ,  Misuzu SAGAWA ,  Kazuki WATANABE ,  Keiji WATANABE ,  Shuntaro MACHIDA ,  Nobuyuki SUGII ,  Daisuke RYUZAKI

IPC: H01J37/28 ,  H01L21/3065 ,  B81C1/00 ,  H01L21/66 ,  H01J37/305 ,  H01J37/302

CPC classification number: H01J37/28 ,  B81C1/00 ,  B81C2201/0132 ,  H01J37/3023 ,  H01J37/3056 ,  H01J2237/30411 ,  H01J2237/31745 ,  H01J2237/31749 ,  H01L21/3065 ,  H01L22/26

Abstract: The invention is directed to a technique for reducing the time from the start of fabrication of a prototype structure to the completion of fabrication of a real structure. A device processing method includes steps of: fabricating a first structure using an ion beam under a first condition in a first region on a substrate; measuring a size of the first structure which is fabricated; comparing the measurement result with design data; determining a second condition from the comparison result; and fabricating a second structure using the ion beam under the second condition in a second region on the substrate.

公开(公告)号：US20180267075A1

公开(公告)日：2018-09-20

申请号：US15763240

申请日：2016-03-18

Applicant: Hitachi, Ltd.

Inventor： Shuntaro MACHIDA ,  Nobuyuki SUGII ,  Keiji WATANABE ,  Daisuke RYUZAKI ,  Tetsufumi KAWAMURA ,  Kazuki WATANABE

IPC: G01P15/08 ,  B81C99/00

CPC classification number: G01P15/0802 ,  B81C99/001 ,  B81C99/0025 ,  B81C99/0065 ,  B81C2201/0143 ,  B81C2201/0181 ,  B81C2203/038 ,  G01P15/125

Abstract: For the purpose of shortening the MEMS manufacturing TAT, the MEMS manufacturing method according to the present invention includes a step of extracting the first MEMS with first characteristic in a range approximate to the required characteristic from the plurality of MEMS preliminarily prepared on the main surface of the substrate, and a step of forming a second MEMS having the required characteristic by directly processing the first MEMS.

公开(公告)号：US20180273378A1

公开(公告)日：2018-09-27

申请号：US15765206

申请日：2016-03-18

Applicant: Hitachi, Ltd.

Inventor： Tetsufumi KAWAMURA ,  Kazuki WATANABE ,  Atsushi ISOBE ,  Yuudai KAMADA ,  Shuntaro MACHIDA ,  Nobuyuki SUGII ,  Daisuke RYUZAKI

IPC: B81C99/00 ,  G06F17/50

Abstract: Provided is a technology that enables the shortening of the designing period. A device designing method includes a step of extracting a structure compatible with requested characteristics from a database in which each structure of a device is associated with characteristics and a step of outputting the extracted structure and a tuning parameter for adjusting the structure into ranges of the requested characteristics. In regard to each structure parameter determining the structure of the device, characteristics obtained by performing a simulation while exhaustively changing the structure parameter in a manufacturable range and the structure parameter used for the simulation are stored in the database while being associated with each other.