Systems and methods for noise and drift calibration using dithered calibration

    公开(公告)号:US10480943B2

    公开(公告)日:2019-11-19

    申请号:US15366971

    申请日:2016-12-01

    摘要: Systems and methods for noise and drift calibration using dithered calibration, a system comprising a processing unit; and two or more dithered calibrated sensors that provide directional measurements to the processing unit, wherein a dithered calibrated sensor in the dithered calibrated sensors has an input axis that rotates about an axis such that bias error can be removed by the processing unit; wherein the dithered calibrated sensor provides a zero-bias measurement along a first axis and a low-noise measurement along a second axis, the second axis being orthogonal to the first axis; wherein the dithered calibrated sensors are arranged such that the dithered calibrated sensor provide low-noise and zero-bias measurements along the measured axes; and wherein the processing unit executes an algorithm to combine measurements that are along the same axis to produce a measurement for each measured axis that has both low-noise and zero-bias.

    LOW TEMPERATURE WAFER BONDING
    14.
    发明申请
    LOW TEMPERATURE WAFER BONDING 审中-公开
    低温波形焊接

    公开(公告)号:US20160351436A1

    公开(公告)日:2016-12-01

    申请号:US14722910

    申请日:2015-05-27

    摘要: A method of low temperature wafer bonding is provided. The method comprises: providing oxide to form a bonding layer on a deposition surface of at least one of two wafers, the bonding layer having a thickness in the range of 100 Angstroms to 500 Angstroms; soaking the wafers in a solution that makes bonding surfaces of the wafers hydrophilic; rinsing the wafers with water after soaking the wafers in the solution that makes bonding surfaces of the wafers hydrophilic; drying the wafers; optical-contact bonding the wafers with each other by bringing the bonding layers of the wafers in contact with each other to form a wafer pair; and annealing the wafer pair at a temperature less than or equal to 500° Celsius.

    摘要翻译: 提供了一种低温晶片接合的方法。 该方法包括:提供氧化物以在两个晶片中的至少一个晶片的沉积表面上形成结合层,该结合层的厚度在100埃至500埃的范围内; 将晶片浸泡在使晶片的结合表面亲水的溶液中; 在将晶片浸泡在使晶片的结合表面亲水的溶液中之后用水冲洗晶片; 干燥晶片; 通过使晶片的结合层彼此接触来将晶片彼此光学接触接合,以形成晶片对; 并且在小于或等于500℃的温度下退火晶片对。