Abstract:
A power module and a manufacturing method thereof are provided, and the power module includes a carrier substrate, an interconnection layer, a first chip, a second chip, a ceramic bonding substrate, a top interconnection layer and a lead frame. The interconnection layer is disposed on the carrier substrate. The first chip and the second chip are disposed on the interconnection layer, and electrically connected to the interconnection layer. The ceramic bonding substrate is disposed on the interconnection layer, and is disposed in between the first chip and the second chip so as to separate the first chip from the second chip. The top interconnection layer is disposed on the ceramic bonding substrate, covers the first chip and the second chip, and is electrically connected to the first chip and the second chip. The lead frame is disposed on the top interconnection layer and electrically connected to the top interconnection layer.
Abstract:
A plug-in type power module includes a power unit and a heat-transfer unit vertically disposed on the power unit and extending outwardly away from two sides of the power unit. A first ceramic layer is disposed between the power unit and the heat-transfer unit. Therefore, heat generated by the power unit can be transferred from the first ceramic layer to the heat-transfer unit to increase the speed of heat dissipation. A subsystem having the plug-in type power module is also provided.
Abstract:
A power module and a manufacturing method thereof are provided, and the power module includes a carrier substrate, an interconnection layer, a first chip, a second chip, a ceramic bonding substrate, a top interconnection layer and a lead frame. The interconnection layer is disposed on the carrier substrate. The first chip and the second chip are disposed on the interconnection layer, and electrically connected to the interconnection layer. The ceramic bonding substrate is disposed on the interconnection layer, and is disposed in between the first chip and the second chip so as to separate the first chip from the second chip. The top interconnection layer is disposed on the ceramic bonding substrate, covers the first chip and the second chip, and is electrically connected to the first chip and the second chip. The lead frame is disposed on the top interconnection layer and electrically connected to the top interconnection layer.
Abstract:
A power module including a plurality of substrates, a plurality of power devices, and a heat dissipation assembly is provided. The substrates are located on different planes and surround an axis. Each of the substrates extends along the axis. The power devices electrically connected with each other are disposed on the substrates respectively. The heat dissipation assembly is disposed on the substrates and opposite to the power devices. Heat generated from the power devices is transferred to the heat dissipation assembly through the substrates.
Abstract:
A power module including a plurality of substrates, a plurality of power devices, and a heat dissipation assembly is provided. The substrates are located on different planes and surround an axis. Each of the substrates extends along the axis. The power devices electrically connected with each other are disposed on the substrates respectively. The heat dissipation assembly is disposed on the substrates and opposite to the power devices. Heat generated from the power devices is transferred to the heat dissipation assembly through the substrates.
Abstract:
A power module package structure includes a first substrate and a power component. The first substrate includes at least one conductive layer on a surface thereof. The power component includes a first chip and a first spacer. The first chip has at least one electrode. The first spacer in a heat dissipation space between the first substrate and the first chip includes an insulating heat dissipation layer in the heat dissipation space and multiple vertical conductive connectors, each of the vertical conductive connectors penetrates the insulating heat dissipation layer. The insulating heat dissipation layer surrounds the vertical conductive connectors and electrically isolates the vertical conductive connectors. The vertical conductive connector includes two opposite ends, one end electrically connected to the conductive layer, and the other end electrically connected to the electrode to form a conductive path and a heat dissipation path between the first chip and the first substrate.
Abstract:
A plug-in type power module includes a power unit and a heat-transfer unit vertically disposed on the power unit and extending outwardly away from two sides of the power unit. A first ceramic layer is disposed between the power unit and the heat-transfer unit. Therefore, heat generated by the power unit can be transferred from the first ceramic layer to the heat-transfer unit to increase the speed of heat dissipation. A subsystem having the plug-in type power module is also provided.
Abstract:
An intelligent diagnosis system for a power module. The system includes a power module, a hardware checking module and a diagnostic module. The power module has a temperature sensing element for obtaining a temperature difference between a starting minimum temperature and a current temperature. The hardware checking module has a current sensing element, a voltage sensing element and a magnetic coupling closed loop detection element for obtaining the current, the output voltage and the input voltage of the power module, and the hardware loop status, respectively. The diagnostic module calculates the number of cycles that have been operated, a measured impedance and an instantaneous power based on those measurement results, and calculating a risk index based on the number of cycles that have been operated, the temperature difference, the measured impedance, the instantaneous power and the hardware loop status, thereby determining the accumulation of the abnormality index record.
Abstract:
A power module including a plurality of substrates, a plurality of power devices, and a heat dissipation assembly is provided. The substrates are located on different planes and surround an axis. Each of the substrates extends along the axis. The power devices electrically connected with each other are disposed on the substrates respectively. The heat dissipation assembly is disposed on the substrates and opposite to the power devices. Heat generated from the power devices is transferred to the heat dissipation assembly through the substrates.
Abstract:
A structure of a thermoelectric module including at least one substrate, a thermoelectric device and an insulation protection structure is provided. The thermoelectric device is disposed on the substrate. The insulation protection structure surrounds the thermoelectric device. The thermoelectric device includes at least three electrode plates, first type and second type thermoelectric materials and a diffusion barrier structure. First and second electrode plates among the three electrode plates are disposed on the substrate. The first type thermoelectric material is disposed on the first electrode plate. The second type thermoelectric material is disposed on the second electrode plate. A third electrode plate among the three electrode plates is disposed on the first type and second type thermoelectric materials. The diffusion barrier structure is disposed on two terminals of each of the first type and second type thermoelectric materials. A fabrication method of the foregoing thermoelectric module is also provided.