公开(公告)号：US20180190333A1

公开(公告)日：2018-07-05

申请号：US15597846

申请日：2017-05-17

Applicant: Infineon Technologies AG

Inventor： Mihail Jefremow ,  Thomas Kern ,  Christian Peters

IPC: G11C7/22 ,  G11C7/06

CPC classification number: G11C7/22 ,  G11C7/06 ,  G11C7/065 ,  G11C7/067 ,  G11C13/004 ,  G11C13/0061 ,  G11C16/26 ,  G11C16/28 ,  G11C16/32 ,  G11C2013/0045 ,  G11C2013/0054 ,  G11C2013/0057 ,  G11C2207/063 ,  G11C2207/068 ,  G11C2213/79

Abstract: A method is suggested for determining a state of a memory cell via a sense amplifier the method including applying a first signal to the sense amplifier; sensing a first response; determining a reference signal based on the first signal; sensing a second response based on a second signal that is determined based on the first signal; and determining the state of the memory cell based on the second response and the reference signal. Also, a memory device that is able to determine the state of the memory cell is provided.

公开(公告)号：US09583444B2

公开(公告)日：2017-02-28

申请号：US13970651

申请日：2013-08-20

Applicant: Infineon Technologies AG

Inventor： Christian Peters ,  Robert Allinger ,  Klaus Knobloch ,  Snezana Jenei

IPC: H01L23/552 ,  H01L43/02 ,  H01L43/12

CPC classification number: H01L23/552 ,  H01L43/02 ,  H01L43/12 ,  H01L2924/0002 ,  H01L2924/3025 ,  Y10T156/12 ,  H01L2924/00

Abstract: A method for applying a magnetic shielding layer to a substrate is provided, wherein a first magnetic shielding layer is adhered to a first surface of the substrate. A first film layer is adhered to the first magnetic shielding layer and the first magnetic shielding layer is more adherent to the first surface than the film layer to the first magnetic shielding layer.

Abstract translation: 提供了一种将磁屏蔽层施加到基板上的方法，其中第一磁屏蔽层粘附到基板的第一表面。 第一膜层粘附到第一磁屏蔽层，第一磁屏蔽层比第一磁屏蔽层比膜层更贴附于第一表面。

公开(公告)号：US09465705B2

公开(公告)日：2016-10-11

申请号：US14252925

申请日：2014-04-15

Applicant: Infineon Technologies AG

Inventor： Christian Peters

IPC: G06F11/00 ,  G06F11/20 ,  G11C16/34 ,  G11C29/44 ,  G11C29/50 ,  G06F11/10 ,  G11C29/04

CPC classification number: G06F11/2094 ,  G06F11/1068 ,  G06F11/1666 ,  G06F11/20 ,  G11C16/3445 ,  G11C29/4401 ,  G11C29/50004 ,  G11C2029/0409

Abstract: A method is suggested for processing a target memory, the method comprising the steps of (i) checking the target memory subsequent to an erase operation directed to the target memory; and (ii) replacing the target memory with a spare memory in case a defect is detected.

Abstract translation: 提出了一种用于处理目标存储器的方法，该方法包括以下步骤：（i）在针对目标存储器的擦除操作之后检查目标存储器; 以及（ii）在检测到缺陷的情况下用备用存储器替换目标存储器。

公开(公告)号：US20210174868A1

公开(公告)日：2021-06-10

申请号：US17117713

申请日：2020-12-10

Applicant: Infineon Technologies AG

Inventor： David MUELLER ,  Wolf Allers ,  Christian Peters

IPC: G11C13/00 ,  G11C7/10

Abstract: In an example, a multiplexer is provided. The multiplexer may include one or more first strings controlling access to source-lines of the memory, wherein a first string of the one or more first strings includes a first set of two high voltage transistors and a first plurality of low voltage transistors. The multiplexer may include one or more second strings controlling access to bit-lines of the memory, wherein a second string of the one or more second strings includes a second set of two high voltage transistors and a second plurality of low voltage transistors. A method for operating such multiplexer is provided.