Calibrated biasing of sleep transistor in integrated circuits

    公开(公告)号:US10454476B2

    公开(公告)日:2019-10-22

    申请号:US16145598

    申请日:2018-09-28

    Abstract: Embodiments include apparatuses, methods, and systems associated with biasing a sleep transistor (also referred to as a power gate transistor) in an integrated circuit. The sleep transistor may be coupled between a load circuit and a power rail, the sleep transistor to be on in an active mode to provide the supply voltage to the load circuit, and to be off in a sleep mode to disconnect the load circuit from the power rail. The bias circuit may be coupled to the gate terminal of the sleep transistor to provide a calibrated gate voltage to the gate terminal during the sleep mode. The calibrated gate voltage may be based on a subthreshold leakage current and a gate-induced drain leakage (GIDL) current of the sleep transistor or a replica sleep transistor designed to replicate the leakage current of the sleep transistor. Other embodiments may be described and claimed.

    CALIBRATED BIASING OF SLEEP TRANSISTOR IN INTEGRATED CIRCUITS

    公开(公告)号:US20190044512A1

    公开(公告)日:2019-02-07

    申请号:US16145598

    申请日:2018-09-28

    CPC classification number: H03K19/0016 H03K19/0013

    Abstract: Embodiments include apparatuses, methods, and systems associated with biasing a sleep transistor (also referred to as a power gate transistor) in an integrated circuit. The sleep transistor may be coupled between a load circuit and a power rail, the sleep transistor to be on in an active mode to provide the supply voltage to the load circuit, and to be off in a sleep mode to disconnect the load circuit from the power rail. The bias circuit may be coupled to the gate terminal of the sleep transistor to provide a calibrated gate voltage to the gate terminal during the sleep mode. The calibrated gate voltage may be based on a subthreshold leakage current and a gate-induced drain leakage (GIDL) current of the sleep transistor or a replica sleep transistor designed to replicate the leakage current of the sleep transistor. Other embodiments may be described and claimed.

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