REMOVAL OF DEFECTIVE DIES ON DONOR WAFERS FOR SELECTIVE LAYER TRANSFER

    公开(公告)号:US20250112067A1

    公开(公告)日:2025-04-03

    申请号:US18478963

    申请日:2023-09-29

    Abstract: In one embodiment, a selective transfer process includes forming a layer of integrated circuit (IC) components on a first substrate. The method also includes dispensing liquid droplets into a subset of a plurality of areas of a second substrate, where the areas of the second substrate are defined by hydrophobic lines patterned to match a layout of the IC components on the first substrate. The method further includes partially bonding the first substrate to the second substrate, where a subset of the IC components on the first substrate are bonded to the liquid droplets on the second substrate (e.g., via capillary forces), and separating the first substrate from the second substrate. When the first substrate is separated from the second substrate, the subset of IC components is separated from the first substrate and remain on the second substrate.

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