公开(公告)号：US09023438B2

公开(公告)日：2015-05-05

申请号：US13716829

申请日：2012-12-17

Applicant: Intermolecular, Inc.

Inventor： ShouQian Shao ,  Chi-I Lang ,  Jingang Su

IPC: H05H1/24 ,  C23C16/04 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52

CPC classification number: C23C16/45544 ,  C23C16/04 ,  C23C16/042 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/50 ,  C23C16/52

Abstract: Apparatus and methods for depositing materials on a plurality of site-isolated regions on a substrate are provided. The deposition uses PECVD or PEALD. The apparatus include an inner chamber with an aperture and barrier that can be used to isolate the regions during the deposition and prevent the remaining portions of the substrate from being exposed to the deposition process. The process parameters for the deposition process are varied among the site-isolate regions in a combinatorial manner.

Abstract translation: 提供了用于在衬底上的多个位置隔离区域上沉积材料的设备和方法。 沉积使用PECVD或PEALD。 该装置包括具有开口和屏障的内室，其可以用于在沉积期间隔离区域，并且防止基板的剩余部分暴露于沉积工艺。 用于沉积过程的工艺参数以组合方式在位点隔离区域之间变化。

公开(公告)号：US20140174921A1

公开(公告)日：2014-06-26

申请号：US13725622

申请日：2012-12-21

Applicant: INTERMOLECULAR, INC.

Inventor： Hong Sheng Yang ,  Chi-I Lang ,  ShouQian Shao

IPC: C23C14/35

CPC classification number: C23C14/351 ,  C23C14/3407 ,  C23C14/352 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3426 ,  H01J37/3429 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3458

Abstract: An apparatus for sputtering wherein magnets within the magnetron of a sputtering source are positioned such that Ar+ ions arriving at the surface of a multi-piece target do not strike the target perpendicular to the surface at the gaps between the sectors of the target. The off-angle bombardment of the Ar+ ions ensures that the Ar+ ions do not result in the sputtering and deposition of target backing material through the gap between the target sectors.

Abstract translation: 一种用于溅射的设备，其中溅射源的磁控管内的磁体被定位成使得到达多件式靶的表面的Ar +离子在目标的扇区之间的间隙处不垂直于表面撞击靶。 Ar +离子的偏角轰击确保Ar +离子不会导致目标背衬材料通过目标部分之间的间隙的溅射和沉积。