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    High Deposition Rate Chamber with Co-Sputtering Capabilities
    1.
    发明申请
    High Deposition Rate Chamber with Co-Sputtering Capabilities 审中-公开
    具有共溅射能力的高沉积速率室

    公开(公告)号：US20140174907A1

    公开(公告)日：2014-06-26

    申请号：US13725133

    申请日：2012-12-21

    Applicant: INTERMOLECULAR, INC.

    Inventor： Hong Sheng Yang ,  Kent Riley Child ,  Chi-I Lang ,  James Tsung

    IPC: C23C14/34

    CPC classification number: C23C14/04 ,  B01J19/0046 ,  B01J2219/0043 ,  B01J2219/00527 ,  B01J2219/00596 ,  B01J2219/00754 ,  B01J2219/00756 ,  C23C14/351 ,  C23C14/352 ,  H01J37/34

    Abstract: A deposition chamber is provided. The deposition chamber includes a plurality of sputter guns disposed within the chamber, wherein the plurality of sputter guns are operable to vertically extend and retract within the chamber and wherein each gun of the plurality of sputter guns is pivotable around a pivot axis. The chamber includes a substrate support rotatable around a first axis and a second axis and a plate disposed over the substrate support. The plate has a plurality of apertures extending therethrough. The plurality of apertures includes an aperture located below each sputter gun of the plurality of sputter guns and a centrally located aperture.

    Abstract translation: 提供沉积室。 沉积室包括设置在室内的多个溅射枪，其中多个溅射枪可操作以在室内垂直延伸和缩回，并且其中多个溅射枪中的每个喷枪可围绕枢转轴线枢转。 腔室包括可围绕第一轴线旋转的基底支撑件和第二轴线以及设置在基板支撑件上方的板材。 该板具有延伸穿过其中的多个孔。 多个孔包括位于多个溅射枪的每个溅射枪下方的孔和位于中心的孔。

    Transition Metal Oxide Bilayers
    4.
    发明申请
    Transition Metal Oxide Bilayers 有权
    过渡金属氧化物双层

    公开(公告)号：US20140217348A1

    公开(公告)日：2014-08-07

    申请号：US14252285

    申请日：2014-04-14

    Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

    Inventor： Hieu Pham ,  Vidyut Gopal ,  Imran Hashim ,  Tim Minvielle ,  Yun Wang ,  Takeshi Yamaguchi ,  Hong Sheng Yang

    IPC: H01L45/00

    CPC classification number: H01L45/08 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641

    Abstract: Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 Å and about 100 Å, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.

    Abstract translation: 本发明的实施例包括非易失性存储器元件和包括非易失性存储元件的存储器件。 还公开了形成非易失性存储元件的方法。 非易失性存储元件包括第一电极层，第二电极层和设置在第一和第二电极层之间的多个氧化物层。 氧化物层中的一个具有线性电阻和亚化学计量组成，另一个氧化物层具有双稳态电阻和近化学计量组成。 优选地，两个氧化物层厚度的总和在约和之间，并且具有双稳态电阻的氧化物层具有在总厚度的约25％至约75％之间的厚度。 在一个实施例中，氧化物层在具有受控的氩气和氧气的气氛中使用反应溅射形成。

    Transition Metal Oxide Bilayers
    5.
    发明申请
    Transition Metal Oxide Bilayers 有权
    过渡金属氧化物双层

    公开(公告)号：US20150200361A1

    公开(公告)日：2015-07-16

    申请号：US14618055

    申请日：2015-02-10

    Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

    Inventor： Hieu Pham ,  Vidyut Gopal ,  Imran Hashim ,  Tim Minvielle ,  Yun Wang ,  Takeshi Yamaguchi ,  Hong Sheng Yang

    IPC: H01L45/00

    CPC classification number: H01L45/08 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641

    Abstract: Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 Å and about 100 Å, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.

    Abstract translation: 本发明的实施例包括非易失性存储器元件和包括非易失性存储元件的存储器件。 还公开了形成非易失性存储元件的方法。 非易失性存储元件包括第一电极层，第二电极层和设置在第一和第二电极层之间的多个氧化物层。 氧化物层中的一个具有线性电阻和亚化学计量组成，另一个氧化物层具有双稳态电阻和近化学计量组成。 优选地，两个氧化物层厚度的总和在约和之间，并且具有双稳态电阻的氧化物层具有在总厚度的约25％至约75％之间的厚度。 在一个实施例中，氧化物层在具有受控的氩气和氧气的气氛中使用反应溅射形成。

    Cooling Efficiency Method for Fluid Cooled Sputter Guns
    7.
    发明申请
    Cooling Efficiency Method for Fluid Cooled Sputter Guns 审中-公开
    流体冷却溅射枪的冷却效率方法

    公开(公告)号：US20140144771A1

    公开(公告)日：2014-05-29

    申请号：US13687984

    申请日：2012-11-28

    Applicant: INTERMOLECULAR, INC.

    Inventor： Kent Riley Child ,  Hong Sheng Yang

    IPC: C23C14/35

    CPC classification number: C23C14/35 ,  H01J37/3435 ,  H01J37/3497

    Abstract: A sputter gun assembly is provided. The sputter gun assembly includes a target and a target backing plate coupled to the back of the target. A magnetron is positioned within a cooling chamber and is disposed over the target backing plate and defines a gap between the magnetron and the target backing plate. A fluid inlet and a fluid outlet are connected to the cooling chamber. A restriction bar is positioned within the cooling chamber, wherein the restriction bar is configured to prevent a flow of fluid through the inlet to the outlet unless the fluid traverses the gap defined between the magnetron and the target backing plate. The sputter gun assembly further includes a diverter surrounding the magnetron. The diverter further includes slots in its surface that serve to direct cooling fluid through the gap formed between defined between the magnetron and the target backing plate.

    Abstract translation: 提供溅射枪组件。 溅射枪组件包括连接到靶的背面的靶和目标背板。 磁控管定位在冷却室内并且设置在目标背板上并限定磁控管与目标背板之间的间隙。 流体入口和流体出口连接到冷却室。 限制杆定位在冷却室内，其中限制杆构造成防止流体流过出口的入口，除非流体横过磁控管和目标背板之间限定的间隙。 溅射枪组件还包括围绕磁控管的转向器。 分流器还包括其表面中的槽，其用于将冷却流体引导通过形成在磁控管和目标背板之间的间隙。

    Transition metal oxide bilayers
    10.
    发明授权
    Transition metal oxide bilayers 有权
    过渡金属氧化物双层

    公开(公告)号：US08987697B2

    公开(公告)日：2015-03-24

    申请号：US14252285

    申请日：2014-04-14

    Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

    Inventor： Hieu Pham ,  Vidyut Gopal ,  Imran Hashim ,  Tim Minvielle ,  Yun Wang ,  Takeshi Yamaguchi ,  Hong Sheng Yang

    IPC: H01L29/02 ,  H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/08 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641

    Abstract: Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 Å and about 100 Å, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.

    Abstract translation: 本发明的实施例包括非易失性存储器元件和包括非易失性存储元件的存储器件。 还公开了形成非易失性存储元件的方法。 非易失性存储元件包括第一电极层，第二电极层和设置在第一和第二电极层之间的多个氧化物层。 氧化物层中的一个具有线性电阻和亚化学计量组成，另一个氧化物层具有双稳态电阻和近化学计量组成。 优选地，两个氧化物层厚度的总和在约和之间，并且具有双稳态电阻的氧化物层具有在总厚度的约25％至约75％之间的厚度。 在一个实施例中，氧化物层在具有受控的氩气和氧气的气氛中使用反应溅射形成。

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