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公开(公告)号:US20220356358A1
公开(公告)日:2022-11-10
申请号:US17626952
申请日:2020-07-16
Applicant: Idemitsu Kosan Co.,Ltd.
Inventor: Hiroshi YASUDA , Shigekazu TOMAI
IPC: C09D5/08 , C09D7/61 , C09D179/04 , C09D179/02 , C09D181/00 , C08K3/04
Abstract: A composition having a carbon material and a redox substance with a redox potential of −0.2 (V vs. SHE) or higher and 1.5 (V vs. SHE) or lower. A composition having a carbon material that is a carbon fiber. A composition where the carbon fiber is in a form of a chopped strand, roving, textile, non-woven fabric, or unidirectional material.
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公开(公告)号:US20220356118A1
公开(公告)日:2022-11-10
申请号:US17622391
申请日:2020-06-24
Applicant: IDEMITSU KOSAN CO.,LTD.
Inventor: Shigekazu TOMAI , Yoshihiro UEOKA , Satoshi KATSUMATA , Kenichi SASAKI
IPC: C04B35/453 , C04B35/64 , C23C14/34 , C23C14/08
Abstract: An oxide sintered body may include zinc, magnesium, a positive trivalent or positive tetravalent metal element X, and oxygen as constituent elements. The atomic ratio of the metal element X to the sum of the zinc, the magnesium, and the metal element X [X/(Zn+Mg+X)] may be 0.0001 or more and 0.6 or less. The atomic ratio of the magnesium to the sum of the zinc and the magnesium [Mg/(Zn+Mg)] may be 0.25 or more and 0.8 or less.
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公开(公告)号:US20210355033A1
公开(公告)日:2021-11-18
申请号:US17358411
申请日:2021-06-25
Applicant: IDEMITSU KOSAN CO., LTD.
Inventor: Kazuyoshi INOUE , Futoshi UTSUNO , Shigekazu TOMAI , Masatoshi SHIBATA , Mami ITOSE
IPC: C04B35/01 , C04B35/626 , C04B35/64 , C23C14/08 , C23C14/34 , H01L21/02 , H01L27/12 , H01L29/24 , H01L29/786
Abstract: An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.
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公开(公告)号:US20210079160A1
公开(公告)日:2021-03-18
申请号:US16963720
申请日:2019-01-22
Applicant: IDEMITSU KOSAN CO.,LTD.
Inventor: Naoko ARAI , Shigekazu TOMAI , Fumioki FUKATSU
Abstract: A composition comprising a conductive polymer, and a compound having an OH group and further having a butoxy group.
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15.
公开(公告)号:US20160211386A1
公开(公告)日:2016-07-21
申请号:US14912800
申请日:2014-08-08
Applicant: IDEMITSU KOSAN CO., LTD.
Inventor: Shigekazu TOMAI , Masatoshi SHIBATA , Emi KAWASHIMA , Koki YANO , Hiromi HAYASAKA
IPC: H01L29/872 , H01L29/47 , H01L29/24
CPC classification number: H01L29/872 , H01L29/04 , H01L29/16 , H01L29/24 , H01L29/247 , H01L29/26 , H01L29/267 , H01L29/47
Abstract: A Schottky barrier diode element includes an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, the oxide semiconductor layer including either or both of a polycrystalline oxide that includes gallium (Ga) as the main component and an amorphous oxide that includes gallium (Ga) as the main component.
Abstract translation: 肖特基势垒二极管元件包括n型或p型硅(Si)衬底,氧化物半导体层和肖特基电极层,所述氧化物半导体层包括含有镓(Ga)的多晶氧化物中的一种或两种 主要成分和包含镓(Ga)作为主要成分的无定形氧化物。
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公开(公告)号:US20240317778A1
公开(公告)日:2024-09-26
申请号:US18686985
申请日:2022-08-17
Applicant: IDEMITSU KOSAN CO.,LTD. , THE UNIVERSITY OF TOKYO
Inventor: Masamitsu HAEMORI , Shigekazu TOMAI , Yoshikatsu SEINO , Hiroaki NAKAMURA , Hatsumi MORI , Tomoko FUJINO , Shun DEKURA , Kota ONOZUKA
IPC: C07D519/00 , H01G11/48 , H01M4/62
CPC classification number: C07D519/00 , H01G11/48 , H01M4/624
Abstract: A compound of formula (1):
Z1-αa-βb-γc-δd-ϵe-Z2 (1),
wherein α, β, γ, δ, and ϵ are respectively units of formulas (1α), (1β), (1γ), (1δ), and (1ϵ):
and the structure of the unit α is different from the structure of the unit β, the structure of the unit β is different from the structure of the unit γ, the structure of the unit γ is different from the structure of the unit δ, and the structure of the unit δ is different from the structure of the unit ϵ.-
公开(公告)号:US20220154013A1
公开(公告)日:2022-05-19
申请号:US17598588
申请日:2020-03-12
Applicant: IDEMITSU KOSAN CO.,LTD.
Inventor: Shigekazu TOMAI , Yoshikatsu SEINO
IPC: C09D5/24 , C09D175/04 , C09D163/00 , H01B1/12
Abstract: A solution composition comprising a conductive polymer, a resin, and a solvent is described. The solution composition has an acid value of 0.0 to 14.5 mgKOH/g or a base value of 0.0 to 1.0 mgHCl/g. The solution composition may be applied to a surface such as a steel surface and dried to obtain a film. The obtained film may be used for rust inhibition.
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公开(公告)号:US20200325072A1
公开(公告)日:2020-10-15
申请号:US16096641
申请日:2017-04-26
Applicant: IDEMITSU KOSAN CO., LTD.
Inventor: Kazuyoshi INOUE , Futoshi UTSUNO , Shigekazu TOMAI , Masatoshi SHIBATA , Mami ITOSE
IPC: C04B35/01 , C04B35/626 , C04B35/64 , C23C14/34 , C23C14/08 , H01L21/02 , H01L27/12 , H01L29/24 , H01L29/786
Abstract: An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.
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公开(公告)号:US20190218145A1
公开(公告)日:2019-07-18
申请号:US16310388
申请日:2017-06-16
Applicant: IDEMITSU KOSAN CO., LTD.
Inventor: Kazuyoshi INOUE , Shigekazu TOMAI , Masatoshi SHIBATA , Motohiro TAKESHIMA
IPC: C04B35/01 , C04B35/626 , C04B35/64 , C23C14/34 , H01L21/02 , H01L29/66 , H01L29/786
CPC classification number: C04B35/01 , C04B35/6261 , C04B35/64 , C04B2235/3286 , C04B2235/3293 , C04B2235/604 , C04B2235/6562 , C04B2235/6567 , C04B2235/764 , C23C14/34 , C23C14/3407 , H01B1/08 , H01B5/14 , H01B13/00 , H01L21/02554 , H01L29/66969 , H01L29/7869
Abstract: An oxide sintered body includes a bixbyite phase represented by In2O3, and a garnet phase represented by Y3In2Ga3O12.
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公开(公告)号:US20190013389A1
公开(公告)日:2019-01-10
申请号:US16065943
申请日:2016-12-26
Applicant: IDEMITSU KOSAN CO., LTD.
Inventor: Emi KAWASHIMA , Takashi SEKIYA , Yuki TSURUMA , Yoshihiro UEOKA , Shigekazu TOMAI , Motohiro TAKESHIMA
IPC: H01L29/47 , H01L29/872 , H01L29/868
CPC classification number: H01L29/47 , H01L21/28 , H01L21/44 , H01L29/0619 , H01L29/0649 , H01L29/24 , H01L29/247 , H01L29/66143 , H01L29/868 , H01L29/872
Abstract: A laminated body comprising a substrate, an ohmic electrode layer, a metal oxide semiconductor layer, a Schottky electrode layer and a buffer electrode layer in this order, wherein a reduction suppressing layer is provided between the Schottky electrode layer and the buffer electrode layer.
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