公开(公告)号：US20220002205A1

公开(公告)日：2022-01-06

申请号：US17289975

申请日：2019-10-30

Applicant: IDEMITSU KOSAN CO.,LTD.

Inventor： Shigekazu TOMAI ,  Yoshihiro UEOKA ,  Satoshi KATSUMATA ,  Kenichi SASAKI ,  Masashi OYAMA

IPC: C04B35/453

Abstract: A sintered body, containing zinc, magnesium and oxygen as constituent elements, wherein the atomic ratio of zinc to the sum of zinc and magnesium [Zn/(Zn+Mg)] is 0.20 to 0.75, the atomic ratio of magnesium to the sum of zinc and magnesium [Mg/(Zn+Mg)] is 0.25 to 0.80, and the sintered body consists of a single crystal structure as measured by X-ray diffraction.

公开(公告)号：US20190006473A1

公开(公告)日：2019-01-03

申请号：US16064210

申请日：2016-12-21

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Yuki TSURUMA ,  Takashi SEKIYA ,  Shigekazu TOMAI ,  Emi KAWASHIMA ,  Yoshihiro UEOKA

IPC: H01L29/24 ,  H01L29/47 ,  H01L29/872 ,  H01L21/02 ,  H01L29/812

CPC classification number: H01L29/247 ,  H01L21/02381 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/45 ,  H01L29/47 ,  H01L29/812 ,  H01L29/872

Abstract: A semiconductor device 1 which comprises a pair of an ohmic electrode 20 and a Schottky electrode 10 separated from each other, and a semiconductor layer 30 in contact with the ohmic electrode 20 and the Schottky electrode 10, and which satisfies the following formula (I): n

公开(公告)号：US20160197202A1

公开(公告)日：2016-07-07

申请号：US14912815

申请日：2014-08-08

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Shigekazu TOMAI ,  Masatoshi SHIBATA ,  Emi KAWASHIMA ,  Koki YANO ,  Hiromi HAYASAKA

IPC: H01L29/872 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/872 ,  H01L29/04 ,  H01L29/24 ,  H01L29/247 ,  H01L29/26 ,  H01L29/47 ,  H01L29/66969 ,  H01L29/861

Abstract: A schottky barrier diode element having a silicon (Si) substrate, an oxide semiconductor layer and a schottky electrode layer, wherein the oxide semiconductor layer includes a polycrystalline and/or amorphous oxide semiconductor having a band gap of 3.0 eV or more and 5.6 eV or less.

Abstract translation: 具有硅（Si）衬底，氧化物半导体层和肖特基电极层的肖特基势垒二极管元件，其中所述氧化物半导体层包括具有3.0eV以上至5.6eV带隙的多晶和/或非晶氧化物半导体， 减。

公开(公告)号：US20220393073A1

公开(公告)日：2022-12-08

申请号：US17775115

申请日：2020-11-02

Applicant: IDEMITSU KOSAN CO.,LTD. ,  NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM ,  NIKKISO CO., LTD.

Inventor： Shigekazu TOMAI ,  Yoshihiro UEOKA ,  Satoshi KATSUMATA ,  Maki KUSHIMOTO ,  Manato DEKI ,  Yoshio HONDA ,  Hiroshi AMANO

IPC: H01L33/42 ,  H01L33/32 ,  H01L33/12

Abstract: A stacked body may include a support, a buffer layer, and an electrode layer, in this order, wherein the buffer layer may include one or more metals selected from the group consisting of Ga, Al, In, and Zn, and oxygen, the electrode layer comprises an oxide of magnesium and an oxide of zinc, and the electrode layer has a half width of a diffraction peak observed at 2θ=34.8±0.5 deg in X-ray diffraction measurement of 0.43 deg or smaller.

公开(公告)号：US20200266304A1

公开(公告)日：2020-08-20

申请号：US16065239

申请日：2016-12-26

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Yoshihiro UEOKA ,  Takashi SEKIYA ,  Shigekazu TOMAI ,  Emi KAWASHIMA ,  Yuki TSURUMA ,  Motohiro TAKESHIMA

IPC: H01L29/872 ,  H01L29/04 ,  H01L29/786

Abstract: A laminated body comprising a substrate, one or more layers selected from a contact resistance reducing layer and a reduction suppressing layer, a Schottky electrode layer and a metal oxide semiconductor layer in this order.

公开(公告)号：US20160343554A1

公开(公告)日：2016-11-24

申请号：US15107993

申请日：2014-12-18

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Shigekazu TOMAI ,  Kazuyoshi INOUE ,  Kazuaki EBATA ,  Masatoshi SHIBATA ,  Futoshi UTSUNO ,  Yuki TSURUMA ,  Yu ISHIHARA

IPC: H01J37/34 ,  C23C14/34 ,  H01L29/786 ,  C23C14/08 ,  C04B35/01 ,  C04B35/64

CPC classification number: H01J37/3429 ,  C04B35/01 ,  C04B35/64 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/5445 ,  C04B2235/602 ,  C04B2235/604 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/762 ,  C04B2235/764 ,  C04B2235/786 ,  C04B2235/80 ,  C23C14/08 ,  C23C14/083 ,  C23C14/086 ,  C23C14/3414 ,  H01J37/3426 ,  H01J37/3491 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66969 ,  H01L29/7869

Abstract: An oxide sintered body comprising a bixbyite phase composed of In2O3 and an A3B5O12 phase (wherein A is one or more elements selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, and B is one or more elements selected from the group consisting of Al and Ga).

Abstract translation: 一种氧化物烧结体，包括由In 2 O 3和A 3 B 5 O 12相构成的双相晶相（其中A是选自Sc，Y，La，Ce，Pr，Nd，Pm，Sm，Eu，Gd，Tb中的一种或多种元素 ，Dy，Ho，Er，Tm，Yb和Lu，B是选自Al和Ga的一种或多种元素）。

公开(公告)号：US20220388908A1

公开(公告)日：2022-12-08

申请号：US17885147

申请日：2022-08-10

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Kazuyoshi INOUE ,  Masatoshi SHIBATA ,  Emi KAWASHIMA ,  Yuki TSURUMA ,  Shigekazu TOMAI

IPC: C04B35/01 ,  C23C14/34 ,  H01L27/146 ,  H01L29/786

Abstract: A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below, 0.80≤In/(In+Y+Ga)≤0.96  (1), 0.02≤Y/(In+Y+Ga)≤0.10  (2), and 0.02≤Ga/(In+Y+Ga)≤0.10  (3), and Al element at an atomic ratio as defined in a formula (4) below, 0.005≤Al/(In+Y+Ga+Al)≤0.07  (4), where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.

公开(公告)号：US20220340442A1

公开(公告)日：2022-10-27

申请号：US17860678

申请日：2022-07-08

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Kazuyoshi INOUE ,  Shigekazu TOMAI ,  Masatoshi SHIBATA

IPC: C01G15/00 ,  C04B35/50 ,  C23C14/34 ,  C04B35/01 ,  C04B35/44

Abstract: A garnet compound represented by a general formula (I): Ln3In2Ga3-XAlXO12 (I) (in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0≤X

公开(公告)号：US20220037561A1

公开(公告)日：2022-02-03

申请号：US17280045

申请日：2019-09-26

Applicant: IDEMITSU KOSAN CO.,LTD. ,  NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM ,  NIKKISO CO., LTD.

Inventor： Yoshihiro UEOKA ,  Shigekazu TOMAI ,  Satoshi KATSUMATA ,  Maki KUSHIMOTO ,  Manato DEKI ,  Yoshio HONDA ,  Hiroshi AMANO

IPC: H01L33/42

Abstract: A stacked body comprising: a semiconductor layer comprising a group III-V nitride semiconductor, and an electrode layer, wherein the electrode layer comprises magnesium oxide and zinc oxide, wherein the molar ratio of magnesium based on the sum of magnesium and zinc of the electrode layer [Mg/(Mg+Zn)] is 0.25 or more and 0.75 or less, and conductivity of the electrode layer is 1.0×10−2 S/cm or more.

公开(公告)号：US20190177176A1

公开(公告)日：2019-06-13

申请号：US16325170

申请日：2017-08-25

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Kazuyoshi INOUE ,  Shigekazu TOMAI ,  Masatoshi SHIBATA

IPC: C01G15/00 ,  C04B35/50 ,  C23C14/34

Abstract: A garnet compound represented by a general formula (I): Ln3In2Ga3-XAlXO12 (I) (in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0≤X