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公开(公告)号:US10715926B2
公开(公告)日:2020-07-14
申请号:US16195194
申请日:2018-11-19
Applicant: Infineon Technologies AG
Abstract: A MEMS component includes a MEMS sound transducer having a membrane structure and an assigned counterelectrode structure, and a circuit unit, which is electrically coupled to the MEMS sound transducer and which in a first operating mode of the MEMS sound transducer in the audio frequency range detects an audio output signal of the MEMS sound transducer on the basis of a deflection of the membrane structure relative to the counterelectrode structure, the deflection being brought about by an acoustic sound pressure change, and in a second operating mode of the MEMS sound transducer in the ultrasonic frequency range to drive and read the MEMS sound transducer as an ultrasonic transceiver.
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公开(公告)号:US09938141B2
公开(公告)日:2018-04-10
申请号:US15051310
申请日:2016-02-23
Applicant: Infineon Technologies AG
Inventor: Christian Bretthauer , Dirk Meinhold
IPC: B81C1/00
CPC classification number: B81C1/00904 , B81B2201/0264 , B81B2207/015 , B81B2207/07
Abstract: A semiconductor element and method are provided such that the method includes providing a processed substrate arrangement including a processed semiconductor substrate and a metallization layer structure on a main surface of the processed semiconductor substrate. The method further includes release etching for generating a kerf in the metallization layer structure at a separation region in the processed semiconductor substrate, the separation region defining a border between a die region of the processed substrate arrangement and at least a second region of the processed substrate arrangement.
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公开(公告)号:US12196589B2
公开(公告)日:2025-01-14
申请号:US18065394
申请日:2022-12-13
Applicant: Infineon Technologies AG
Inventor: Martin Seidl , Christian Bretthauer , Wolfgang Klein , Ulrich Krumbein , David Tumpold
Abstract: A thermoresistive micro sensor device includes a semiconductor chip; a through hole, which runs through the semiconductor chip from an upper side to a lower side; electrically conductive structures, wherein the middle section of each of the electrically conductive structures spans over the through hole at the upper side of the semiconductor chip; an electrically insulating arrangement for electrically insulating the electrically conductive structures and the semiconductor chip from each other, wherein the through hole runs through the electrically insulating arrangement; and a contact arrangement including contacts, wherein each of the contacts is electrically connected to one of the first end sections or one of the second end sections, so that electrical energy is fed to at least one of the electrically conductive structures to heat the respective electrically conductive structure, and so that an electrical resistance of one of the electrically conductive structures is measured at the contact arrangement.
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14.
公开(公告)号:US11962973B2
公开(公告)日:2024-04-16
申请号:US18165014
申请日:2023-02-06
Applicant: Infineon Technologies AG
Inventor: Christian Bretthauer , David Tumpold , Pradyumna Mishra , Daniel Neumaier
IPC: H04R17/02 , B81B7/04 , G01H11/08 , G01P1/02 , G01P15/08 , G01P15/09 , G01P15/18 , H04R1/04 , H04R1/28 , H10N30/30 , H10N30/87 , H04R7/18 , H04R17/10
CPC classification number: H04R17/02 , B81B7/04 , G01H11/08 , G01P15/0802 , G01P15/09 , G01P15/18 , H04R1/28 , H10N30/302 , H10N30/308 , H10N30/87 , B81B2201/0235 , B81B2201/0257 , B81B2203/0127 , G01P1/023 , G01P2015/084 , H04R1/04 , H04R7/18 , H04R17/10 , H04R2201/003
Abstract: A combined MicroElectroMechanical structure (MEMS) includes a first piezoelectric membrane having one or more first electrodes, the first piezoelectric membrane being affixed between a first holder and a second holder; and a second piezoelectric membrane having an inertial mass and one or more second electrodes, the second piezoelectric membrane being affixed between the second holder and a third holder.
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公开(公告)号:US20230396930A1
公开(公告)日:2023-12-07
申请号:US18316589
申请日:2023-05-12
Applicant: Infineon Technologies AG
Inventor: Christian Bretthauer , Andreas Bogner , Gabriele Bosetti , Niccoló De Milleri
IPC: H04R17/00
CPC classification number: H04R17/00 , H04R2201/003
Abstract: A MEMS device and a method for operating a MEMS device are provided. The MEMS device comprises a piezoelectric transducer element having at least a first piezoelectric transducer region and a deflectable structure, wherein the deflectable structure comprises the piezoelectric transducer element. The MEMS device further comprises a control circuitry configured to readout at least a first sensor signal from the first region of the piezoelectric transducer element based on a deflection of the deflectable structure. The control circuitry is further configured to determine a control signal from the readout first sensor signal, wherein the control signal has a counteracting effect to the deflection of the deflectable structure when provided to the piezoelectric transducer element. The control circuitry is configured to provide the control signal to the piezoelectric transducer element for counteracting the deflection of the deflectable structure.
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16.
公开(公告)号:US11611835B2
公开(公告)日:2023-03-21
申请号:US16896665
申请日:2020-06-09
Applicant: Infineon Technologies AG
Inventor: Christian Bretthauer , Pradyumna Mishra , Daniel Neumaier , David Tumpold
IPC: G01P15/08 , G01P15/09 , H01L41/047 , H01L41/113 , G01P15/18 , G01H11/08 , G01P1/02 , H04R17/02 , B81B7/04 , H04R1/28 , H04R1/04 , H04R7/18 , H04R17/10
Abstract: A MicroElectroMechanical Structure (MEMS) accelerometer includes a piezoelectric membrane including at least one electrode and an inertial mass, the piezoelectric membrane being affixed to a holder; and a circuit for evaluating sums and differences of signals associated with the at least one electrode to determine a three-dimensional acceleration direction, wherein the at least one electrode includes a segmented electrode, and wherein the segmented electrode includes four segmentation zones.
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公开(公告)号:US20220167095A1
公开(公告)日:2022-05-26
申请号:US17484115
申请日:2021-09-24
Applicant: Infineon Technologies AG
Inventor: Niccoló De Milleri , Christian Bretthauer , Alessandro Caspani , Alessandra Fusco
Abstract: A MEMS device includes a MEMS sound transducer, and control circuitry. The control circuitry includes a supply signal provider for providing a high-level supply signal and read-out circuitry for receiving an output signal from the MEMS sound transducer, and a switching arrangement for selectively connecting the MEMS sound transducer to the supply signal provider, and for selectively connecting the MEMS sound transducer to the read-out circuitry based on a control signal. The control circuitry provides the control signal having an ultrasonic actuation pattern to the switching arrangement during a first condition TX of the control signal, wherein the ultrasonic actuation pattern of the control signal triggers the switching arrangement for alternately coupling the high-level supply signal to the MEMS sound transducer.
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公开(公告)号:US20190208330A1
公开(公告)日:2019-07-04
申请号:US16195194
申请日:2018-11-19
Applicant: Infineon Technologies AG
Abstract: A MEMS component includes a MEMS sound transducer having a membrane structure and an assigned counterelectrode structure, and a circuit unit, which is electrically coupled to the MEMS sound transducer and which in a first operating mode of the MEMS sound transducer in the audio frequency range detects an audio output signal of the MEMS sound transducer on the basis of a deflection of the membrane structure relative to the counterelectrode structure, the deflection being brought about by an acoustic sound pressure change, and in a second operating mode of the MEMS sound transducer in the ultrasonic frequency range to drive and read the MEMS sound transducer as an ultrasonic transceiver.
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公开(公告)号:US20190088604A1
公开(公告)日:2019-03-21
申请号:US15709102
申请日:2017-09-19
Applicant: Infineon Technologies AG
Inventor: Christian Bretthauer , Bernhard Laumer , Holger Poehle , Momtchil Stavrev
IPC: H01L23/00 , H01L23/528 , H01L23/522 , H01L23/532
Abstract: A semiconductor die includes a last metallization layer above a semiconductor substrate, a bond pad above the last metallization layer, a passivation layer covering part of the bond pad and having an opening that defines a contact area of the bond pad, an insulating region separating the bond pad from the last metallization layer at least in an area corresponding to the contact area of the bond pad, and an electrically conductive interconnection structure that extends from the bond pad to the upper metallization layer outside the contact area of the bond pad. Corresponding methods of manufacture are also provided.
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公开(公告)号:US20180156706A1
公开(公告)日:2018-06-07
申请号:US15830036
申请日:2017-12-04
Applicant: Infineon Technologies AG
Inventor: Alfons Dehe , Christian Bretthauer
IPC: G01N15/06
CPC classification number: G01N15/06 , G01N15/02 , G01N29/032 , G01N2015/0046 , G01N2291/02408 , G01N2291/045 , G01N2291/048 , G01N2291/101 , G01N2291/102
Abstract: An apparatus for analysing the particulate matter content of an aerosol includes an aerosol chamber configured to receive an aerosol, the particulate matter content of which should be analysed, at least one ultrasonic generator configured to produce ultrasonic waves in the aerosol received in the aerosol chamber, an ultrasonic detector configured to detect ultrasonic waves produced by the at least one ultrasonic generator in the aerosol, and an evaluator having a data exchange communication link with the ultrasonic detector and configured to ascertain the matter content on the basis of signals output by the ultrasonic detector. The ultrasonic generator and the ultrasonic detector are positioned relative to one another such that a path length to be traversed by ultrasonic waves between the ultrasonic generator and the ultrasonic detector is less than 1 cm.
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