公开(公告)号：US20180022601A1

公开(公告)日：2018-01-25

申请号：US15651522

申请日：2017-07-17

Applicant: Infineon Technologies AG

Inventor： Claus Waechter ,  Edward Fuergut ,  Bernd Goller ,  Michael Ledutke ,  Dominic Maier

IPC: B81C1/00 ,  B81B7/00

Abstract: The method comprises fabricating a semiconductor panel comprising a plurality of semiconductor devices, fabricating a cap panel comprising a plurality of caps, bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices, and singulating the bonded panels into a plurality of semiconductor modules.

公开(公告)号：US11195787B2

公开(公告)日：2021-12-07

申请号：US15045687

申请日：2016-02-17

Applicant: Infineon Technologies AG

Inventor： Ngoc-Hoa Huynh ,  Franz-Xaver Muehlbauer ,  Claus Waechter ,  Veronika Huber ,  Dominic Maier ,  Thomas Kilger ,  Saverio Trotta ,  Ashutosh Baheti ,  Georg Meyer-Berg ,  Maciej Wojnowski

IPC: H01L23/31 ,  H01L23/498 ,  H01L23/367 ,  H01L23/538 ,  H01Q9/28 ,  H01Q1/22 ,  H01Q9/04 ,  H01Q21/06 ,  H01L21/56 ,  H01Q9/26

Abstract: A semiconductor device includes a semiconductor chip and a redistribution layer on a first side of the semiconductor chip. The redistribution layer is electrically coupled to the semiconductor chip. The semiconductor device includes a dielectric layer and an antenna on the dielectric layer. The dielectric layer is between the antenna and the semiconductor chip.

公开(公告)号：US11145563B2

公开(公告)日：2021-10-12

申请号：US16447610

申请日：2019-06-20

Applicant: Infineon Technologies AG

Inventor： Christian Geissler ,  Walter Hartner ,  Claus Waechter ,  Maciej Wojnowski

IPC: H01L23/31 ,  H01L21/56 ,  H01L21/683 ,  H01L23/00

Abstract: A method comprises providing a least one semiconductor component, wherein each of the at least one semiconductor component comprises: a semiconductor chip, wherein the semiconductor chip comprises a first main surface and a second main surface opposite the first main surface, and a sacrificial layer arranged above the opposite second main surface of the semiconductor chip. The method further comprises encapsulating the at least one semiconductor component with an encapsulation material. The method further comprises removing the sacrificial material, wherein above each of the at least one semiconductor chip a cutout is formed in the encapsulation material. The method further comprises arranging at least one lid above the at least one cutout, wherein a closed cavity is formed by the at least one cutout and the at least one lid above each of the at least one semiconductor chip.

公开(公告)号：US11040872B2

公开(公告)日：2021-06-22

申请号：US16595532

申请日：2019-10-08

Applicant: Infineon Technologies AG

Inventor： Claus Waechter ,  Edward Fuergut ,  Bernd Goller ,  Michael Ledutke ,  Dominic Maier

IPC: H01L27/14 ,  B81C1/00 ,  B81B7/00

Abstract: The method comprises fabricating a semiconductor panel comprising a plurality of semiconductor devices, fabricating a cap panel comprising a plurality of caps, bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices, and singulating the bonded panels into a plurality of semiconductor modules.

公开(公告)号：US20170236776A1

公开(公告)日：2017-08-17

申请号：US15045687

申请日：2016-02-17

Applicant: Infineon Technologies AG

Inventor： Ngoc-Hoa Huynh ,  Franz-Xaver Muehlbauer ,  Claus Waechter ,  Veronika Huber ,  Dominic Maier ,  Thomas Kilger ,  Saverio Trotta ,  Ashutosh Baheti ,  Georg Meyer-Berg ,  Maciej Wojnowski

IPC: H01L23/498 ,  H01L23/367 ,  H01L21/56 ,  H01L23/31

CPC classification number: H01L23/49822 ,  H01L21/56 ,  H01L23/3114 ,  H01L23/3672 ,  H01L23/3677 ,  H01L23/49816 ,  H01L23/5389 ,  H01L2223/6677 ,  H01L2223/6683 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/73267 ,  H01L2924/18162 ,  H01Q1/2283 ,  H01Q9/0407 ,  H01Q9/265 ,  H01Q9/285 ,  H01Q21/061 ,  H01Q21/065

Abstract: A semiconductor device includes a semiconductor chip and a redistribution layer on a first side of the semiconductor chip. The redistribution layer is electrically coupled to the semiconductor chip. The semiconductor device includes a dielectric layer and an antenna on the dielectric layer. The dielectric layer is between the antenna and the semiconductor chip.