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公开(公告)号：US10570007B2
公开(公告)日：2020-02-25
申请号：US16385475
申请日：2019-04-16
Applicant: Infineon Technologies AG
Inventor： Gunar Lorenz , Bernd Goller
Abstract: A MEMS assembly includes a package, wherein the package includes a substrate and a cover element, wherein a through opening is provided in the cover element, a MEMS component within the package on the cover element, an integrated circuit arrangement within the package on the substrate, and a support component within the package on the substrate, wherein the support component on the substrate is electrically coupled, by first electrical connection lines, to the MEMS component on the cover element and is electrically coupled, by second electrical connection lines, to the circuit arrangement on the substrate in order to produce an electrical connection between the MEMS component and the integrated circuit arrangement.
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公开(公告)号：US20190359481A1
公开(公告)日：2019-11-28
申请号：US16385475
申请日：2019-04-16
Applicant: Infineon Technologies AG
Inventor： Gunar Lorenz , Bernd Goller
Abstract: A MEMS assembly includes a package, wherein the package includes a substrate and a cover element, wherein a through opening is provided in the cover element, a MEMS component within the package on the cover element, an integrated circuit arrangement within the package on the substrate, and a support component within the package on the substrate, wherein the support component on the substrate is electrically coupled, by first electrical connection lines, to the MEMS component on the cover element and is electrically coupled, by second electrical connection lines, to the circuit arrangement on the substrate in order to produce an electrical connection between the MEMS component and the integrated circuit arrangement.
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公开(公告)号：US20190270639A1
公开(公告)日：2019-09-05
申请号：US16270219
申请日：2019-02-07
Applicant: Infineon Technologies AG
Inventor： Gunar Lorenz , Alfons Dehe , Marc Fueldner , Bernd Goller , Ulrich Krumbein , Andreas Wiesbauer
Abstract: A MEMS sensor includes a housing with an interior volume, wherein the housing has an access port to the interior volume, a MEMS component in the housing, and a protection structure, which reduces an introduction of electromagnetic disturbance radiation with a wavelength in the range between 10 nm and 20 μm into the interior volume through the access port and reduces a propagation of the electromagnetic disturbance radiation in the interior volume.
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公开(公告)号：US20190259716A1
公开(公告)日：2019-08-22
申请号：US16402683
申请日：2019-05-03
Applicant: Infineon Technologies AG
Inventor： Pedro Augusto Borrego Lambin Torres Amaral , Ewa Brox-Napieralska , Bernd Goller , Andreas Wiesbauer
Abstract: A device package includes a semiconductor device. The semiconductor device is disposed on a substrate. The device package further includes a covering. The covering is disposed on the substrate and surrounds the semiconductor device. The covering includes a void, a first layer, and a second layer. The void is between an interior surface of the covering and the semiconductor device. The first layer has a first electrical conductivity and a first thickness. The second layer is disposed under the first layer. The second layer has a second electrical conductivity and a second thickness. The first electrical conductivity is greater than the second electrical conductivity. The first thickness is less than the second thickness.
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公开(公告)号：US20180022601A1
公开(公告)日：2018-01-25
申请号：US15651522
申请日：2017-07-17
Applicant: Infineon Technologies AG
Inventor： Claus Waechter , Edward Fuergut , Bernd Goller , Michael Ledutke , Dominic Maier
Abstract: The method comprises fabricating a semiconductor panel comprising a plurality of semiconductor devices, fabricating a cap panel comprising a plurality of caps, bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices, and singulating the bonded panels into a plurality of semiconductor modules.
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Patent Agency Ranking
公开(公告)号：US20170276646A1
公开(公告)日：2017-09-28
申请号：US15079889
申请日：2016-03-24
Applicant: Infineon Technologies AG
Inventor： Rui Miguel Moreira Araujo , Bernd Goller , Dominic Maier
IPC: G01N29/024 , H04R1/04 , G01N29/02 , H04R1/02
CPC classification number: G01N29/024 , G01N29/022 , G01N29/14 , G01N29/42 , G01N2291/02809 , H01L2224/48091 , H01L2224/73265 , H01L2924/10155 , H01L2924/16152 , H04R1/028 , H04R1/04 , H04R2201/003 , H04R2499/11 , H01L2924/00014
Abstract: Embodiments of the present disclosure provide an apparatus for determining a characteristic of a fluid. The apparatus may include a device configured to determine a hydrodynamic pressure of the fluid. The apparatus may further include a sensor configured to determine a hydrostatic pressure of the fluid or at least one component of the fluid. The apparatus may also include a common substrate on which the sensor and the device configured to determine a hydrodynamic pressure of the fluid may be commonly arranged, and an ASIC (Application Specific Integrated Circuit) which may be electrically coupled with at least one of the device or the sensor. The ASIC may be at least partially embedded in the common substrate.
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公开(公告)号：US20220369042A1
公开(公告)日：2022-11-17
申请号：US17660239
申请日：2022-04-22
Applicant: Infineon Technologies AG
Inventor： Paul Westmarland , Bernd Goller , Scott Palmer , Mark Pavier
Abstract: A sound transducer device includes a multilayer component board having a first side and an opposite second side, and a sound port extending between the first and second sides of the multilayer component board. The sound transducer also includes a MEMS sound transducer die including a suspended membrane structure, wherein the MEMS sound transducer die is arranged at the first side of the multilayer component board such that the suspended membrane structure is in fluid communication with the sound port. The sound transducer also includes a mesh structure for providing an environmental barrier, the mesh structure covering the sound port from either one of the first and second sides of the multilayer component board.
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公开(公告)号：US11040872B2
公开(公告)日：2021-06-22
申请号：US16595532
申请日：2019-10-08
Applicant: Infineon Technologies AG
Inventor： Claus Waechter , Edward Fuergut , Bernd Goller , Michael Ledutke , Dominic Maier
Abstract: The method comprises fabricating a semiconductor panel comprising a plurality of semiconductor devices, fabricating a cap panel comprising a plurality of caps, bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices, and singulating the bonded panels into a plurality of semiconductor modules.
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公开(公告)号：US10707158B2
公开(公告)日：2020-07-07
申请号：US15497267
申请日：2017-04-26
Applicant: Infineon Technologies AG
Inventor： Alexander Heinrich , Bernd Goller , Thorsten Meyer , Gerald Ofner
IPC: H01L23/498 , H01L23/00 , H01L23/495 , H01L21/48 , H01L21/56 , H01L23/31
Abstract: A package comprising a chip carrier, an electronic chip on the chip carrier, a clip on the electronic chip, an encapsulant at least partially encapsulating the electronic chip, and an electrically conductive vertical connection structure provided separately from the clip and electrically connecting the chip carrier with the clip.
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公开(公告)号：US11574879B2
公开(公告)日：2023-02-07
申请号：US16402683
申请日：2019-05-03
Applicant: Infineon Technologies AG
Inventor： Pedro Augusto Borrego Lambin Torres Amaral , Ewa Brox-Napieralska , Bernd Goller , Andreas Wiesbauer
IPC: H01L23/66 , H01L23/552 , H01L23/48 , H01L23/00 , H01Q1/22 , H01Q1/38 , B81B7/00 , H01L23/06 , H01L23/20 , H01L21/48 , H01L23/053
Abstract: A device package includes a semiconductor device. The semiconductor device is disposed on a substrate. The device package further includes a covering. The covering is disposed on the substrate and surrounds the semiconductor device. The covering includes a void, a first layer, and a second layer. The void is between an interior surface of the covering and the semiconductor device. The first layer has a first electrical conductivity and a first thickness. The second layer is disposed under the first layer. The second layer has a second electrical conductivity and a second thickness. The first electrical conductivity is greater than the second electrical conductivity. The first thickness is less than the second thickness.
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