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    Back Side to Front Side Alignment on a Semiconductor Wafer with Special Structures
    11.
    发明公开
    Back Side to Front Side Alignment on a Semiconductor Wafer with Special Structures 审中-公开

    公开(公告)号：US20230296994A1

    公开(公告)日：2023-09-21

    申请号：US17699650

    申请日：2022-03-21

    Applicant: Infineon Technologies AG

    Inventor： Dirk Offenberg

    IPC: G03F9/00

    CPC classification number: G03F9/7088 ,  G03F9/7069 ,  G03F9/7084

    Abstract: A method of aligning a lithographic layer on a semiconductor wafer comprises forming, in a first side of the semiconductor wafer, a first alignment structure from one or more first trenches. In some embodiments, the trenches are formed to a depth reaching to within about three micrometers from the second side of the semiconductor wafer, for example. In others, the wafer is thinned after the first alignment structure is formed, so that the trenches then reach to within about three micrometers from the second side of the semiconductor wafer. At least one lithographic layer is aligned on a second side of the semiconductor wafer by detecting the first alignment structure from the second side, using illumination in the visible spectrum.

    Controlling of photo-generated charge carriers
    13.
    发明授权
    Controlling of photo-generated charge carriers 有权

    公开(公告)号：US10707362B2

    公开(公告)日：2020-07-07

    申请号：US15881100

    申请日：2018-01-26

    Applicant: Infineon Technologies AG

    Inventor： Thomas Bever ,  Henning Feick ,  Dirk Offenberg ,  Stefano Parascandola ,  Ines Uhlig ,  Thoralf Kautzsch ,  Dirk Meinhold ,  Hanno Melzner

    IPC: H01L31/0352 ,  G01S7/4914 ,  H01L27/148

    Abstract: Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region.

    Optical sensor device with deep and shallow control electrodes
    14.
    发明授权
    Optical sensor device with deep and shallow control electrodes 有权

    公开(公告)号：US10545225B2

    公开(公告)日：2020-01-28

    申请号：US15783062

    申请日：2017-10-13

    Applicant: Infineon Technologies AG ,  pmdtechnologies ag

    Inventor： Stefano Parascandola ,  Henning Feick ,  Matthias Franke ,  Dirk Offenberg ,  Jens Prima ,  Robert Roessler ,  Michael Sommer

    IPC: H04N13/257 ,  H01L27/146 ,  G01S17/36

    Abstract: An optical sensor device configured to detect a time of flight of an electromagnetic signal includes a semiconductor substrate with a conversion region configured to convert at least a portion of the electromagnetic signal into photo-generated charge carriers. A deep control electrode is formed in a trench extending into the semiconductor substrate. The deep control electrode extends deeper into the semiconductor substrate than a shallow control electrode. A control circuit is configured to apply to the deep control electrode and to the shallow control electrode varying potentials having a fixed phase relationship to each other, to generate electric potential distributions in the conversion region, by which the photo-generated charge carriers in the conversion region are directed. The directed photo-generated charge carriers are detected at at least one readout node.

    CONTROLLING OF PHOTO-GENERATED CHARGE CARRIERS
    16.
    发明申请
    CONTROLLING OF PHOTO-GENERATED CHARGE CARRIERS 审中-公开

    公开(公告)号：US20180151765A1

    公开(公告)日：2018-05-31

    申请号：US15881100

    申请日：2018-01-26

    Applicant: Infineon Technologies AG

    Inventor： Thomas Bever ,  Henning Feick ,  Dirk Offenberg ,  Stefano Parascandola ,  lnes Uhlig ,  ThoraIf Kautzsch ,  Dirk Meinhold ,  Hanno Melzner

    IPC: H01L31/0352 ,  H01L27/148 ,  G01S7/491

    Abstract: Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region

    Optical sensor device with deep and shallow control electrodes
    17.
    发明授权
    Optical sensor device with deep and shallow control electrodes 有权

    公开(公告)号：US11175389B2

    公开(公告)日：2021-11-16

    申请号：US16747084

    申请日：2020-01-20

    Applicant: Infineon Technologies AG ,  pmdtechnologies ag

    Inventor： Stefano Parascandola ,  Henning Feick ,  Matthias Franke ,  Dirk Offenberg ,  Jens Prima ,  Robert Roessler ,  Michael Sommer

    IPC: H01L27/146 ,  G01S7/4914 ,  G01S7/4915 ,  G01S17/36 ,  H04N13/257

    Abstract: An optical sensor device configured to detect a time of flight of an electromagnetic signal includes a semiconductor substrate having a main surface and a conversion region configured to convert at least a fraction of the electromagnetic signal into photo-generated charge carriers; a first control electrode formed in a trench extending from the main surface into the semiconductor substrate; a second control electrode disposed directly or indirectly on the main surface; a control circuit configured to apply a varying first potential to the first control electrode and to apply a varying second potential to the second control electrode, where the varying second potential has a fixed phase relationship to the first varying potential, to generate electric potential distributions in the conversion region to direct the photo-generated charge carriers; and a readout node arranged in the semiconductor substrate and configured to detect the directed photo-generated charge carriers.

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