公开(公告)号：US20200294891A1

公开(公告)日：2020-09-17

申请号：US16891916

申请日：2020-06-03

Applicant: InnoLux Corporation

Inventor： Ming-Yen WENG ,  Ker-Yih KAO ,  Chia-Chi HO ,  Tsutomu SHINOZAKI ,  Cheng-Chi WANG ,  I-Yin LI

IPC: H01L23/485 ,  H01L21/311 ,  H01L23/66 ,  H01L25/065 ,  H01L21/48 ,  H01Q1/38

Abstract: A high-frequency device manufacturing method is provided. The method includes providing a substrate; forming a conductive material on the substrate; standing the substrate and the conductive material for a first time duration; forming a conductive layer by sequentially repeating the steps of forming the conductive material and standing at least once; and patterning the conductive layer. The thickness of the conductive layer is in a range from 0.9 μm to 10 μm. A high-frequency device is also provided.

公开(公告)号：US20200251812A1

公开(公告)日：2020-08-06

申请号：US16732701

申请日：2020-01-02

Applicant: InnoLux Corporation

Inventor： Chia-Ping TSENG ,  Ker-Yih KAO ,  Chia-Chi HO ,  Ming-Yen WENG ,  Hung-I TSENG ,  Shu-Ling WU ,  Huei-Ying CHEN

IPC: H01Q1/38 ,  H01Q3/44 ,  H01Q3/34 ,  H01L27/12 ,  H01L21/04 ,  H01Q9/04

Abstract: An antenna device is provided. The antenna device includes a first substrate, a multilayer electrode, a second substrate, and a liquid-crystal layer. The multilayer electrode is disposed on the first substrate, and the multilayer electrode includes a first conductive layer, a second conductive layer, and a third conductive layer. The second conductive layer is disposed on the first conductive layer. The third conductive layer is disposed on the second conductive layer. The liquid-crystal layer is disposed between the first substrate and the second substrate. In addition, the third conductive layer includes a first portion that extends beyond the second conductive layer.

公开(公告)号：US20190013277A1

公开(公告)日：2019-01-10

申请号：US16000312

申请日：2018-06-05

Applicant: InnoLux Corporation

Inventor： Yi-Hung LIN ,  Chin-Lung TING ,  Chia-Chi HO ,  I-Yin LI

IPC: H01L23/532 ,  H01L29/43 ,  H04B1/08 ,  H04B1/03

Abstract: A radiation device includes a transistor substrate. A first transistor, a second transistor, a first electrode pad, a second electrode pad, a first conductive line, and a second conductive line are disposed on the transistor substrate. The first electrode pad is disposed adjacent to the first transistor, the second electrode pad is disposed adjacent to the second transistor, the first transistor is electrically connected to the first electrode pad through the first conductive line, and the second transistor is electrically connected to the second electrode pad through the second conductive line. The distance between the first transistor and the first electrode pad is shorter than the distance between the second transistor and the second electrode pad. The ratio of the total area of the first conductive line and the total area of the second conductive line is between 0.8 and 1.2.

公开(公告)号：US20180375202A1

公开(公告)日：2018-12-27

申请号：US15906126

申请日：2018-02-27

Applicant: InnoLux Corporation

Inventor： I-Yin LI ,  Yi-Hung LIN ,  Chia-Chi HO ,  Li-Wei SUNG ,  Ming-Yen WENG ,  Hung-I TSENG ,  Kuo-Chun LO ,  Charlene SU ,  Ker-Yih KAO

IPC: H01Q1/40 ,  H01Q1/38 ,  H01Q3/44

CPC classification number: H01Q1/40 ,  G02F1/1313 ,  H01Q1/2266 ,  H01Q1/2275 ,  H01Q1/2283 ,  H01Q1/24 ,  H01Q1/241 ,  H01Q1/38 ,  H01Q1/50 ,  H01Q3/44 ,  H01Q9/0407 ,  H01Q9/0457 ,  H01Q13/10

Abstract: A microwave modulation device includes a first radiator, a second radiator and a modulation structure. The first radiator includes a substrate; a metal layer disposed on the substrate; a protective layer disposed on at least a portion of the metal layer and including a through hole overlapping with at least a portion of the metal layer; and an etch stop layer disposed between the metal layer and the protective layer. The second radiator disposed corresponding to the first radiator. The modulation structure is disposed between the first radiator and the second radiator.

公开(公告)号：US20180206334A1

公开(公告)日：2018-07-19

申请号：US15853517

申请日：2017-12-22

Applicant: InnoLux Corporation

Inventor： I-Yin LI ,  Chia-Chi HO ,  Yi-Hung LIN ,  Chen-Shuo HSIEH ,  Ker-Yih KAO

IPC: H05K1/02 ,  H05K3/00 ,  H01Q1/38

CPC classification number: H05K1/0243 ,  H01P3/082 ,  H01P11/003 ,  H01Q1/38 ,  H05K1/0271 ,  H05K3/0058

Abstract: A metal-laminated structure is provided. The metal-laminated structure includes a substrate, a compressive stress layer disposed on the substrate, and at least one metal layer disposed on the compressive stress layer, wherein the thickness ratio of the metal layer to the compressive stress layer is in a range from 1 to 30. A high-frequency device including the metal-laminated structure is also provided.

公开(公告)号：US20180204785A1

公开(公告)日：2018-07-19

申请号：US15844907

申请日：2017-12-18

Applicant: InnoLux Corporation

Inventor： Ming-Yen WENG ,  Ker-Yih KAO ,  Chia-Chi HO ,  Tsutomu SHINOZAKI ,  Cheng-Chi WANG ,  I-Yin LI

IPC: H01L23/485 ,  H01L21/311 ,  H01L21/48 ,  H01L25/065 ,  H01L23/66

Abstract: A high-frequency device manufacturing method is provided. The method includes providing a substrate; forming a conductive material on the substrate; standing the substrate and the conductive material for a first time duration; forming a conductive layer by sequentially repeating the steps of forming the conductive material and standing at least once; and patterning the conductive layer. The thickness of the conductive layer is in a range from 0.9 μm to 10 μm. A high-frequency device is also provided.