公开(公告)号：US09725305B2

公开(公告)日：2017-08-08

申请号：US15071499

申请日：2016-03-16

Applicant: InvenSense, Inc.

Inventor： Jong Il Shin ,  Peter Smeys ,  Daesung Lee

IPC: H01L21/302 ,  B81C1/00 ,  B81B7/02

CPC classification number: B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/012 ,  B81C1/00214 ,  B81C1/00293 ,  B81C2203/0118 ,  B81C2203/035 ,  G01P15/0802

Abstract: Provided herein is a method including forming a trench in a handle substrate, and a trench lining is formed in the trench. A first cavity and a second cavity are formed in the handle substrate, wherein the first cavity is connected to the trench. A first MEMS structure and the handle substrate are sealed for maintaining a first pressure within the trench and the first cavity. A second MEMS structure and the handle substrate are sealed for maintaining the first pressure within the second cavity. A portion of the trench lining is exposed, and the first pressure is changed to a second pressure within the first cavity. The first cavity and the trench are sealed to maintain the second pressure within the trench and the first cavity.

公开(公告)号：US09611133B2

公开(公告)日：2017-04-04

申请号：US14667169

申请日：2015-03-24

Applicant: INVENSENSE, INC.

Inventor： Fang Liu ,  Martin Lim ,  Jong Il Shin ,  Jongwoo Shin

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81B3/001 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C2201/115 ,  B81C2203/0792

Abstract: Various embodiments provide for a method for roughening a surface of a MEMs device or the surface of a CMOS surface. A first material can be deposited in a thin layer over a surface made of a second material. After heating, the first and second materials, they can partially melt and interdiffuse, forming an alloy. The first material can then be removed and the alloy is removed at the same time. The surface of the second material that is left behind has then been roughened due to the interdiffusion of the first and second materials.

公开(公告)号：US09513347B2

公开(公告)日：2016-12-06

申请号：US14510098

申请日：2014-10-08

Applicant: INVENSENSE, INC.

Inventor： Jong Il Shin ,  Jongwoo Shin

IPC: G01R33/02 ,  G01R33/038

CPC classification number: G01R33/038 ,  Y10T29/49002

Abstract: A device with a magnetic sensor includes a substrate with a device layer. A magnetic sensor is formed on the device layer and includes a first permanent magnet. The first permanent magnet has at least one alternating ferromagnetic (FM) layer and antiferromagnetic (AFM) layer, with a barrier layer disposed between the FM layer and the AFM layer. The first permanent magnet is magnetized in a first direction at a temperature higher than a blocking temperature of the AFM layer. A plurality of device pads are coupled to the magnetic sensor. An integrated circuit substrate with a plurality of IC pads, wherein the plurality of device pads are selectively eutectic bonded to the plurality of IC pads at a bonding temperature greater than the blocking temperature of the AFM layer of the first permanent magnet.

Abstract translation: 具有磁传感器的装置包括具有器件层的衬底。 磁传感器形成在器件层上，并包括第一永久磁铁。 第一永磁体具有至少一个交替的铁磁（FM）层和反铁磁（AFM）层，阻挡层设置在FM层和AFM层之间。 第一永磁体在高于AFM层的阻挡温度的温度下在第一方向上被磁化。 多个器件焊盘耦合到磁传感器。 一种具有多个IC焊盘的集成电路基板，其中所述多个器件焊盘以大于所述第一永磁体的AFM层的阻挡温度的接合温度选择性地共晶接合到所述多个IC焊盘。

公开(公告)号：US09513346B2

公开(公告)日：2016-12-06

申请号：US14149779

申请日：2014-01-07

Applicant: INVENSENSE, INC.

Inventor： Jong Il Shin ,  Jongwoo Shin

IPC: G01R33/02 ,  G01R33/038 ,  G01C17/04

CPC classification number: G01R33/038 ,  G01C17/04

Abstract: A method and system for a device with a magnetic sensor includes a first permanent magnet and a second permanent magnet. The first permanent magnet and the second permanent magnet of the magnetic sensor have at least one alternating ferromagnetic (FM) layer and antiferromagnetic (AFM) layer. The first permanent magnet is magnetized in a first direction and the second permanent magnet is magnetized in a second direction which is substantially orthogonal to the first direction. The blocking temperature of the AFM layer of the first permanent magnet is higher than the blocking temperature of the AFM layer of the second permanent magnet.

Abstract translation: 具有磁传感器的装置的方法和系统包括第一永磁体和第二永磁体。 磁传感器的第一永磁体和第二永久磁铁具有至少一个交替的铁磁（FM）层和反铁磁（AFM）层。 第一永磁体在第一方向上被磁化，第二永磁体在基本上与第一方向正交的第二方向上被磁化。 第一永磁体的AFM层的阻挡温度高于第二永磁体的AFM层的阻挡温度。

公开(公告)号：US10308503B2

公开(公告)日：2019-06-04

申请号：US15636463

申请日：2017-06-28

Applicant: InvenSense, Inc.

Inventor： Jong Il Shin ,  Peter Smeys ,  Daesung Lee

IPC: B81B7/02 ,  B81C1/00 ,  G01P15/08

Abstract: An apparatus includes a cavity within a substrate. A MEMS structure is within the cavity, wherein the cavity includes the MEMS structure. A trench is connected to the cavity, wherein the trench is not directly opposite the MEMS structure. An oxide layer lines the trench and the cavity. A seal layer seals the trench and traps a predetermined pressure within the cavity and the trench.

公开(公告)号：US09975763B2

公开(公告)日：2018-05-22

申请号：US15457832

申请日：2017-03-13

Applicant: InvenSense, Inc.

Inventor： Jong Il Shin ,  Peter Smeys ,  Jongwoo Shin

IPC: B81C1/00 ,  B81B7/00 ,  B06B1/06

CPC classification number: B81C1/00301 ,  B06B1/06 ,  B81B7/007 ,  B81B2201/0271 ,  B81C1/00238 ,  B81C2203/036 ,  H01L41/113 ,  H01L41/1138 ,  H01L41/31

Abstract: Provided herein is a method including bonding a first oxide layer on a handle substrate to a second oxide layer on a complementary metal oxide semiconductor (“CMOS”), wherein the fusion bonding forms a unified oxide layer including a diaphragm overlying a cavity on the CMOS. The handle substrate is removed leaving the unified oxide layer. A piezoelectric film stack is deposited over the unified oxide layer. Vias are formed in the piezoelectric film stack and the unified oxide layer. An electrical contact layer is deposited, wherein the electrical contact layer electrically connects the piezoelectric film stack to an electrode on the CMOS.

公开(公告)号：US09809450B2

公开(公告)日：2017-11-07

申请号：US14838237

申请日：2015-08-27

Applicant: InvenSense, Inc.

Inventor： Jong Il Shin ,  Peter Smeys ,  Jongwoo Shin

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00238 ,  B81B7/0006 ,  B81B2207/012 ,  B81C2203/019 ,  B81C2203/036 ,  B81C2203/0792

Abstract: A method and system for forming a MEMS device are disclosed. In a first aspect, the method comprises providing a conductive material over at least a portion of a top metal layer of a base substrate, patterning the conductive material and the at least a portion of the top metal layer, and bonding the conductive material with a device layer of a MEMS substrate via metal silicide formation. In a second aspect, the MEMS device comprises a MEMS substrate, wherein the MEMS substrate includes a handle layer, a device layer, and an insulating layer in between. The MEMS device further comprises a base substrate, wherein the base substrate includes a top metal layer and a conductive material over at least a portion of the top metal layer, wherein the conductive material is bonded with the device layer via metal silicide formation.

公开(公告)号：US20170297909A1

公开(公告)日：2017-10-19

申请号：US15636463

申请日：2017-06-28

Applicant: InvenSense, Inc.

Inventor： Jong Il Shin ,  Peter Smeys ,  Daesung Lee

IPC: B81B7/02 ,  B81C1/00

CPC classification number: B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/012 ,  B81C1/00214 ,  B81C1/00293 ,  B81C2203/0118 ,  B81C2203/035 ,  G01P15/0802

Abstract: An apparatus includes a cavity within a substrate. A MEMS structure is within the cavity, wherein the cavity includes the MEMS structure. A trench is connected to the cavity, wherein the trench is not directly opposite the MEMS structure. An oxide layer lines the trench and the cavity. A seal layer seals the trench and traps a predetermined pressure within the cavity and the trench.