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57 条记录 (耗时 0.043 秒)

    Tunable surface acoustic wave resonators and filters
    12.
    发明申请
    Tunable surface acoustic wave resonators and filters 审中-公开

    公开(公告)号：US20170085246A1

    公开(公告)日：2017-03-23

    申请号：US14756554

    申请日：2015-09-17

    申请人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Andy Shih ,  Julia Qiu ,  Yi-Chi Shih

    发明人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Andy Shih ,  Julia Qiu ,  Yi-Chi Shih

    IPC分类号： H03H9/145 ,  H03H9/25

    CPC分类号： H03H9/02574 ,  H03H9/02834 ,  H03H9/14541 ,  H03H2009/02165

    摘要： Filters and oscillators are important components for electronic systems especially those for communications. For many portable units operating at 2 GHz or less, surface acoustic wave resonators are used as filters or oscillators, the resonant frequency is determined by the electrode pitch and velocity of the surface acoustic waves. Because of the large number of frequency bands for communications, it is important to have SAW resonators where the resonant frequencies are tunable and adjustable. This invention provides tunable surface acoustic wave resonators utilizing semiconducting piezoelectric layers having embedded or elevated electrode doped regions. Both metallization ratio and loading mass are changed by varying a DC biasing voltage to effect a change in the resonant frequency. A plurality of the present tunable SAW devices may be connected into a tunable and selectable microwave filter for selecting and adjusting of the bandpass frequency or an tunable oscillator by varying the DC biasing voltages.

    Tunable film bulk acoustic resonators and filters
    14.
    发明授权
    Tunable film bulk acoustic resonators and filters 有权

    公开(公告)号：US10312882B2

    公开(公告)日：2019-06-04

    申请号：US14756018

    申请日：2015-07-22

    申请人： Cindy X. Qiu ,  Ishiang Shih ,  Chunong Qiu ,  Andy Shih ,  Julia Qiu ,  Yi-Chi Shih

    发明人： Cindy X. Qiu ,  Ishiang Shih ,  Chunong Qiu ,  Andy Shih ,  Julia Qiu ,  Yi-Chi Shih

    IPC分类号： H03H3/04 ,  H03H9/00 ,  H03H9/02 ,  H03H9/17 ,  H03H9/56 ,  H03H9/58 ,  H01P1/201

    摘要： In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies, one for transmitting and the other for receiving. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The invention provides tunable film bulk acoustic resonators TFBARs containing semiconducting piezoelectric layers and methods for tuning and adjusting the resonant properties. When a DC biasing voltage is varied, both the depletion region thickness and neutral region thickness associated in the semiconducting piezoelectric layers varies leading to changes in equivalent capacitances, inductance and resistances and hence the resonance properties and frequencies. A plurality of the present TFBARs are connected into a tunable oscillator or a tunable and selectable microwave filter for selecting and adjusting of the bandpass frequency by varying the biasing voltages.

    Tunable film bulk acoustic resonators and filters
    16.
    发明申请
    Tunable film bulk acoustic resonators and filters 审中-公开
    可调薄膜体声共振器和滤波器

    公开(公告)号：US20170025596A1

    公开(公告)日：2017-01-26

    申请号：US14756018

    申请日：2015-07-22

    申请人： Cindy X. Qiu ,  Ishiang Shih ,  Chunong Qiu ,  Andy Shih ,  Julia Qiu ,  Yi-Chi Shih

    发明人： Cindy X. Qiu ,  Ishiang Shih ,  Chunong Qiu ,  Andy Shih ,  Julia Qiu ,  Yi-Chi Shih

    IPC分类号： H03H9/00 ,  H01L41/047 ,  H01L41/107 ,  H01L41/083 ,  H01P1/201

    CPC分类号： H01P1/201 ,  H03H9/0014 ,  H03H9/173 ,  H03H9/568 ,  H03H9/583 ,  H03H2003/0464 ,  H03H2009/02196

    摘要： In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies, one for transmitting and the other for receiving. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The invention provides tunable film bulk acoustic resonators TFBARs containing semiconducting piezoelectric layers and methods for tuning and adjusting the resonant properties. When a DC biasing voltage is varied, both the depletion region thickness and neutral region thickness associated in the semiconducting piezoelectric layers varies leading to changes in equivalent capacitances, inductance and resistances and hence the resonance properties and frequencies. A plurality of the present TFBARs are connected into a tunable oscillator or a tunable and selectable microwave filter for selecting and adjusting of the bandpass frequency by varying the biasing voltages.

    摘要翻译： 在无线通信中，使用许多无线电频带。 对于每个频带，有两个频率，一个用于发射，另一个用于接收。 由于带宽小，相邻带之间的间隔也较小，所以对于诸如移动手持机的每个通信单元，需要许多具有不同带通频带的带通滤波器。 本发明提供了可调谐的膜体声波谐振器，包含半导体压电层的TFBAR和用于调谐和调节谐振特性的方法。 当DC偏置电压变化时，在半导体压电层中相关的耗尽区厚度和中性区厚度都变化导致等效电容，电感和电阻以及共振特性和频率的变化。 多个本TFBAR连接到可调谐振荡器或可调谐和可选择的微波滤波器中，用于通过改变偏置电压来选择和调整带通频率。

    Fabrication methods for T-gate and inverted L-gate structure for high frequency devices and circuits
    17.
    发明申请
    Fabrication methods for T-gate and inverted L-gate structure for high frequency devices and circuits 有权
    用于高频器件和电路的T栅极和反向L栅极结构的制造方法

    公开(公告)号：US20130065383A1

    公开(公告)日：2013-03-14

    申请号：US13199816

    申请日：2011-09-12

    申请人： Cindy X. Qiu ,  Ishiang Shih ,  Chunong Qiu ,  Yi-Chi Shih ,  Julia Qiu

    发明人： Cindy X. Qiu ,  Ishiang Shih ,  Chunong Qiu ,  Yi-Chi Shih ,  Julia Qiu

    IPC分类号： H01L21/283

    CPC分类号： H01L21/0272 ,  H01L21/0274 ,  H01L21/28587 ,  H01L21/28593

    摘要： In high frequency circuits, the switching speed of devices is often limited by the series resistance and capacitance across the input terminals. To reduce the resistance and capacitance, the cross-section of input electrodes is made into a T-shape or inverted L-shape through lithography. The prior art method for the formation of cavities for T-gate or inverted L-gate is achieved through several steps using multiple photomasks. Often, two or even three different photoresists with different sensitivity are required. In one embodiment of the present invention, an optical lithography method for the formation of T-gate or inverted L-gate structures using only one photomask is disclosed. In another embodiment, the structure for the T-gate or inverted L-gate is formed using the same type of photoresist material.

    摘要翻译： 在高频电路中，器件的开关速度通常受输入端子串联电阻和电容的限制。 为了降低电阻和电容，通过光刻将输入电极的横截面制成T形或倒L形。 通过使用多个光掩模的几个步骤来实现用于形成用于T形栅极或反向L栅极的空腔的现有技术方法。 通常需要两种或甚至三种不同灵敏度的不同光刻胶。 在本发明的一个实施例中，公开了仅使用一个光掩模形成T形栅极或反向L栅极结构的光刻方法。 在另一个实施例中，使用相同类型的光致抗蚀剂材料形成T形栅极或反向L栅极的结构。

    Fabrication methods for HEMT devices and circuits on compound semiconductor materials
    18.
    发明授权
    Fabrication methods for HEMT devices and circuits on compound semiconductor materials 有权
    化学半导体材料上HEMT器件和电路的制作方法

    公开(公告)号：US08324037B1

    公开(公告)日：2012-12-04

    申请号：US13200614

    申请日：2011-09-28

    申请人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Yi-Chi Shih ,  Julia Qiu

    发明人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Yi-Chi Shih ,  Julia Qiu

    IPC分类号： H01L21/338

    CPC分类号： H01L29/66462 ,  H01L29/42316 ,  H01L29/7787

    摘要： The prior art method for the formation of T-gate or inverted L-gate is achieved through several lift-off processes and requires at least two different photoresists and hence two different developers. In one embodiment of the present invention, an etching method for the formation of the source, the drain and the T-gate or inverted L-gate of a compound semiconductor HEMT device is disclosed. In such a method, only one type of photoresist and developer are needed. In one other embodiment, a fabrication process for a HEMT device is disclosed to have the stem of the T-gate or the inverted L-gate defined by a dielectric cavity and its mechanical strength enhanced by a dielectric layer. In another embodiment, a fabrication process for a HEMT device is disclosed to have the stems of the source and the drain defined by dielectric cavities and their mechanical strength enhanced by a dielectric layer. In yet another embodiment, a fabrication process for a HEMT device is revealed to have the stems of the source, the drain and the T-gate or inverted L-gate of a compound semiconductor HEMT strengthened by dielectric supporting pillars.

    摘要翻译： 用于形成T形栅极或反向L栅极的现有技术方法是通过几个剥离工艺实现的，并且需要至少两个不同的光致抗蚀剂，因此需要两个不同的显影剂。 在本发明的一个实施例中，公开了一种用于形成化合物半导体HEMT器件的源极，漏极和T栅极或反向L栅极的蚀刻方法。 在这种方法中，仅需要一种类型的光致抗蚀剂和显影剂。 在另一个实施例中，公开了一种用于HEMT器件的制造工艺，其具有由介电腔限定的T形栅极或反向L形栅极的杆，并且其电介质层增强其机械强度。 在另一个实施例中，公开了一种用于HEMT器件的制造工艺，其具有由电介质腔限定的源极和漏极以及由电介质层增强的机械强度。 在另一个实施例中，HEMT器件的制造工艺被揭示为具有通过电介质支撑柱加强的化合物半导体HEMT的源极，漏极和T形栅极或反向L栅极的茎。