公开(公告)号：US20190243247A1

公开(公告)日：2019-08-08

申请号：US16388238

申请日：2019-04-18

Applicant: JSR CORPORATION

Inventor： Naoya NOSAKA ,  Goji Wakamatsu ,  Tsubasa Abe ,  Yuushi Matsumura ,  Yoshio Takimoto ,  Shin-ya Nakafuji ,  Kazunori Sakai

IPC: G03F7/11 ,  C08G61/02 ,  C09D165/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26 ,  C07C35/37 ,  C07C33/28 ,  C07C35/44 ,  C07C43/166 ,  H01L21/027 ,  H01L21/308

CPC classification number: G03F7/11 ,  C07C33/28 ,  C07C35/37 ,  C07C35/44 ,  C07C43/166 ,  C07C2602/42 ,  C07C2603/20 ,  C07C2603/50 ,  C07C2603/54 ,  C08F299/02 ,  C08G61/02 ,  C08G2261/1414 ,  C08G2261/1422 ,  C08G2261/1424 ,  C08G2261/148 ,  C09D165/00 ,  G03F7/162 ,  G03F7/168 ,  G03F7/20 ,  G03F7/26 ,  H01L21/027 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/3081

Abstract: A composition for resist underlayer film formation contains a compound having a group represented by formula (1), and a solvent. R1 represents an organic group having 2 to 10 carbon atoms and having a valency of (m+n), wherein the carbon atoms include two carbon atoms that are adjacent to each other, with a hydroxy group or an alkoxy group bonding to one of the two carbon atoms, and with a hydrogen atom bonding to another of the two carbon atoms; L1 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group; R2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; n is an integer of 1 to 3; * denotes a bonding site to a moiety other than the group represented by the formula (1) in the compound; and m is an integer of 1 to 3.

公开(公告)号：US11126084B2

公开(公告)日：2021-09-21

申请号：US16388238

申请日：2019-04-18

Applicant: JSR CORPORATION

Inventor： Naoya Nosaka ,  Goji Wakamatsu ,  Tsubasa Abe ,  Yuushi Matsumura ,  Yoshio Takimoto ,  Shin-ya Nakafuji ,  Kazunori Sakai

IPC: G03F7/11 ,  C08G61/02 ,  C09D165/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26 ,  C07C35/37 ,  C07C33/28 ,  C07C35/44 ,  C07C43/166 ,  H01L21/027 ,  H01L21/308 ,  C08F299/02 ,  H01L21/3065

Abstract: A composition for resist underlayer film formation contains a compound having a group represented by formula (1), and a solvent. R1 represents an organic group having 2 to 10 carbon atoms and having a valency of (m+n), wherein the carbon atoms include two carbon atoms that are adjacent to each other, with a hydroxy group or an alkoxy group bonding to one of the two carbon atoms, and with a hydrogen atom bonding to another of the two carbon atoms; L1 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group; R2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; n is an integer of 1 to 3; * denotes a bonding site to a moiety other than the group represented by the formula (1) in the compound; and m is an integer of 1 to 3.

公开(公告)号：US10520814B2

公开(公告)日：2019-12-31

申请号：US15672660

申请日：2017-08-09

Applicant: JSR CORPORATION

Inventor： Masayuki Miyake ,  Goji Wakamatsu ,  Tsubasa Abe ,  Kazunori Takanashi ,  Kazunori Sakai

IPC: G03F7/09 ,  G03F7/40 ,  G03F7/38 ,  C08G8/20 ,  G03F7/004 ,  G03F7/11 ,  H01L21/02 ,  H01L21/027 ,  H01L21/033 ,  H01L21/768 ,  C09D161/06 ,  C09D161/12 ,  C09D161/14

Abstract: A resist underlayer film-forming composition includes a solvent, and a compound comprising an aromatic ring. The solvent includes a first solvent having a normal boiling point of less than 156° C., and a second solvent having a normal boiling point of no less than 156° C. and less than 300° C. The resist underlayer film-forming composition is for use in forming a resist underlayer film to be overlaid on a patterned substrate. A production method of a patterned substrate includes applying the resist underlayer film-forming composition on a patterned substrate to obtain a coating film on the patterned substrate. The coating film is heated to obtain a resist underlayer film. A resist pattern is formed on an upper face side of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask.

公开(公告)号：US09958781B2

公开(公告)日：2018-05-01

申请号：US15134508

申请日：2016-04-21

Applicant: JSR CORPORATION

Inventor： Yuushi Matsumura ,  Goji Wakamatsu ,  Naoya Nosaka ,  Tsubasa Abe ,  Yoshio Takimoto

IPC: G03F7/11 ,  C09D161/14 ,  C08G8/30 ,  C08G8/22 ,  G03F7/09 ,  H01L21/027 ,  G03F7/004

CPC classification number: G03F7/11 ,  C08G8/22 ,  C08G8/30 ,  C09D161/14 ,  G03F7/0041 ,  G03F7/094 ,  H01L21/0271

Abstract: A method comprises applying a composition on a substrate to form a coating film on the substrate. The coating film is heated in an atmosphere in which an oxygen concentration is less than 1% by volume and a temperature is higher than 450° C. and 800° C. or lower, to form a film on the substrate. The composition comprises a compound comprising an aromatic ring. The oxygen concentration in the atmosphere during the heating of the coating film is preferably no greater than 0.1% by volume. The temperature in the atmosphere during the heating of the coating film is preferably 500° C. or higher and 600° C. or lower.