公开(公告)号：US08479681B2

公开(公告)日：2013-07-09

申请号：US13019042

申请日：2011-02-01

Applicant: James S. Im

Inventor： James S. Im

IPC: B05B5/00

CPC classification number: H01L21/02686 ,  B23K26/066 ,  H01L21/02 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02678 ,  H01L21/2026 ,  H01L21/324 ,  H01L27/1285 ,  H01L27/1296 ,  Y10T117/10 ,  Y10T117/1088

Abstract: High throughput systems and processes for recrystallizing thin film semiconductors that have been deposited at low temperatures on a substrate are provided. A thin film semiconductor workpiece (170) is irradiated with a laser beam (164) to melt and recrystallize target areas of the surface exposed to the laser beam. The laser beam is shaped into one or more beamlets using patterning masks (150). The mask patterns have suitable dimensions and orientations to pattern the laser beam radiation so that the areas targeted by the beamlets have dimensions and orientations that are conducive to semiconductor recrystallization. The workpiece is mechanically translated along linear paths relative to the laser beam to process the entire surface of the work piece at high speeds. Position sensitive triggering of a laser can be used generate laser beam pulses to melt and recrystallize semiconductor material at precise locations on the surface of the workpiece while it is translated on a motorized stage (180).

Abstract translation: 提供了在低温下沉积在衬底上的用于重结晶薄膜半导体的高通量系统和工艺。 用激光束（164）照射薄膜半导体工件（170），使暴露于激光束的表面的目标区域熔化并再结晶。 使用图案掩模（150）将激光束成形为一个或多个子束。 掩模图案具有适当的尺寸和取向以对激光束辐射进行图案化，使得由子束靶向的区域具有有利于半导体重结晶的尺寸和取向。 工件沿着相对于激光束的线性路径被机械平移，以高速处理工件的整个表面。 激光器的位置敏感触发可用于产生激光束脉冲，以在半导体材料在电动平台（180）上平移时在工件表面上的精确位置处熔融和再结晶半导体材料。

公开(公告)号：US08445365B2

公开(公告)日：2013-05-21

申请号：US13165369

申请日：2011-06-21

Applicant: James S. Im ,  Paul C. Van Der Wilt

Inventor： James S. Im ,  Paul C. Van Der Wilt

IPC: H01L21/00

CPC classification number: C30B35/00 ,  B23K26/066 ,  C30B13/24 ,  C30B28/08 ,  G03F7/70041 ,  G03F7/70725 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1008

Abstract: A method of processing a polycrystalline film on a substrate includes generating laser pulses, directing the laser pulses through a mask to generate patterned laser beams, each having a length l′, a width w′, and a spacing between adjacent beams d′; irradiating a region of the film with the patterned beams, said beams having an intensity sufficient to melt and to induce crystallization of the irradiated portion of the film, wherein the film region is irradiated n times; and after irradiation of each film portion, translating the film and/or the mask, in the x- and y-directions. The distance of translation in the y-direction is about l′/n−δ, where δ is a value selected to overlap the beamlets from one irradiation step to the next. The distance of translation in the x-direction is selected such that the film is moved a distance of about λ′ after n irradiations, where λ′=w′+d′.

Abstract translation: 在衬底上处理多晶膜的方法包括产生激光脉冲，将激光脉冲引导通过掩模以产生每个具有长度l'，宽度w'和相邻光束d'之间的间隔的图案化激光束; 用图案化的光束照射膜的区域，所述光束具有足以熔化并引起膜的照射部分的结晶的强度，其中膜区域被照射n次; 并且在每个膜部分照射之后，在x和y方向上平移膜和/或掩模。 在y方向上的平移距离约为1'/ n-delta，其中delta是从一个辐射步骤到下一个辐射步骤选择重叠子束的值。 选择x方向的平移距离，使得膜在n次照射之后移动约λ'的距离，其中λ'= w'+ d'。

公开(公告)号：US08415670B2

公开(公告)日：2013-04-09

申请号：US12679543

申请日：2008-09-25

Applicant: James S. Im

Inventor： James S. Im

IPC: H01L29/786

CPC classification number: H01L27/1296 ,  H01L29/04 ,  H01L29/78696

Abstract: Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films are described. A thin film transistor (TFT) includes a channel area disposed in a crystalline substrate, which has grain boundaries that are approximately parallel with each other and are spaced apart with approximately equal spacings. The shape of the channel area includes a non-equiangular polygon that has two opposing side edges that are oriented substantially perpendicular to the grain boundaries. The polygon further has an upper edge and a lower edge. At least a portion of each of the upper and lower edges is oriented at a tilt angle with respect to the grain boundaries. The tilt angles are selected such that the number of grain boundaries covered by the polygon is independent of the location of the channel area within the crystalline substrate.

Abstract translation: 描述了在横向结晶的薄膜上制造的薄膜晶体管器件中产生高均匀性的方法。 薄膜晶体管（TFT）包括设置在晶体衬底中的沟道区域，其具有彼此近似平行并且以相等的间隔间隔开的晶界。 通道区域的形状包括具有基本上垂直于晶界定向的两个相对的侧边缘的非等角多边形。 多边形还具有上边缘和下边缘。 上边缘和下边缘中的每一个的至少一部分相对于晶界以倾斜角定向。 选择倾斜角度使得由多边形覆盖的晶界的数量与晶体衬底内的沟道面积的位置无关。

公开(公告)号：US20130009074A1

公开(公告)日：2013-01-10

申请号：US13596693

申请日：2012-08-28

Applicant: James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

Inventor： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

IPC: H01L21/268

CPC classification number: B23K26/0622 ,  B23K26/0626 ,  B23K26/066 ,  G03F7/70041 ,  G03F7/70725 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

Abstract: Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. One method includes generating a sequence of excimer laser pulses, controllably modulating each pulse to a predetermined fluence, homoginizing each modulated pulse in a predetermined plane, masking portions of each homoginized pulse with a pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions corresponding to each fluence controlled patterned beamlet pulse, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets.

Abstract translation: 公开了将非晶硅薄膜样品加工成多晶硅薄膜的方法。 一种方法包括产生准分子激光脉冲序列，可控制地将每个脉冲调制到预定的注量，在每个调制脉冲在预定的平面上均匀化，每个同质化脉冲的部分用狭缝的图案掩蔽，以产生一系列流量控制脉冲的脉冲 图案化的子束，狭缝图案中的每个狭缝足够窄以防止在由对应于狭缝的子束照射的硅薄膜样品的区域中引起显着的成核，用能量控制狭缝的顺序照射非晶硅薄膜样品 图案化的子束以实现对应于每个注量控制的图案化子束脉冲的部分的熔化，并且可控地依次平移样品相对于狭缝图案化的子束的每个注量控制脉冲的相对位置。

公开(公告)号：US07964480B2

公开(公告)日：2011-06-21

申请号：US11876974

申请日：2007-10-23

Applicant: James S. Im ,  Paul C. Van Der Wilt

Inventor： James S. Im ,  Paul C. Van Der Wilt

IPC: H01L21/00

CPC classification number: C30B35/00 ,  B23K26/066 ,  C30B13/24 ,  C30B28/08 ,  G03F7/70041 ,  G03F7/70725 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1008

Abstract: A method of processing a polycrystalline film on a substrate includes generating laser pulses, directing the laser pulses through a mask to generate patterned laser beams, each having a length l′, a width w′, and a spacing between adjacent beams d′; irradiating a region of the film with the patterned beams, said beams having an intensity sufficient to melt and to induce crystallization of the irradiated portion of the film, wherein the film region is irradiated n times; and after irradiation of each film portion, translating the film and/or the mask, in the x- and y-directions. The distance of translation in the y-direction is about l′/n-δ, where δ is a value selected to overlap the beamlets from one irradiation step to the next. The distance of translation in the x-direction is selected such that the film is moved a distance of about λ′ after n irradiations, where λ′=w′+d′.

Abstract translation: 在衬底上处理多晶膜的方法包括产生激光脉冲，将激光脉冲引导通过掩模以产生每个具有长度l'，宽度w'和相邻光束d'之间的间隔的图案化激光束; 用图案化的光束照射膜的区域，所述光束具有足以熔化并引起膜的照射部分的结晶的强度，其中膜区域被照射n次; 并且在每个膜部分照射之后，在x和y方向上平移膜和/或掩模。 y方向的平移距离约为l'/ n-δ，其中δ是从一个照射步骤到下一个照射步骤选择重叠子束的值。 选择x方向的平移距离，使得膜在n次照射之后移动约λ'的距离，其中λ'= w'+ d'。

公开(公告)号：US20110108108A1

公开(公告)日：2011-05-12

申请号：US12919687

申请日：2009-02-27

Applicant: James S. Im ,  Paul C. Van Der Wilt ,  Ui-Jin Chung

Inventor： James S. Im ,  Paul C. Van Der Wilt ,  Ui-Jin Chung

IPC: H01L31/0368 ,  H01L21/26 ,  H01L31/18 ,  H01L29/04

CPC classification number: H01L21/02667 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02686 ,  H01L21/2686 ,  H01L21/67115 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/072 ,  H01L31/1804 ,  H01L31/1872 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: A method of making a crystalline film includes providing a film comprising seed grains of a selected crystallographic surface orientation on a substrate; irradiating the film using a pulsed light source to provide pulsed melting of the film under conditions that provide a mixed liquid/solid phase and allowing the mixed solid/liquid phase to solidify under conditions that provide a textured polycrystalline layer having the selected surface orientation. One or more irradiation treatments may be used. The film is suitable for use in solar cells.

Abstract translation: 制造结晶膜的方法包括在基板上提供包含选定的结晶表面取向的晶粒的膜; 使用脉冲光源照射膜，以在提供混合液/固相的条件下提供膜的脉冲熔融，并允许混合的固/液相在提供具有选定表面取向的织构化多晶层的条件下固化。 可以使用一种或多种照射处理。 该膜适用于太阳能电池。

公开(公告)号：US20110101368A1

公开(公告)日：2011-05-05

申请号：US12919681

申请日：2009-02-27

Applicant: James S. Im

Inventor： James S. Im

IPC: H01L29/04 ,  H01L21/26

CPC classification number: H01L21/02422 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/2686 ,  H01L21/67115

Abstract: The disclosed subject matter generally relates a method of irradiating a large area thin film with a pulsed light source. In some embodiments, the disclosed subject matter particularly relates to utilizing flash lamp annealing in combination with patterning techniques for making thin film devices. The flash lamp annealing can trigger lateral growth crystallization or explosive crystallization in large area thin films. In some embodiments, capping layers or proximity masks can be used in conjunction with the flash lamp annealing.

Abstract translation: 所公开的主题通常涉及用脉冲光源照射大面积薄膜的方法。 在一些实施例中，所公开的主题特别涉及利用闪光灯退火与用于制造薄膜器件的图案化技术相结合。 闪光灯退火可以在大面积薄膜中触发横向生长结晶或爆炸结晶。 在一些实施例中，封盖层或接近掩模可以与闪光灯退火相结合使用。

公开(公告)号：US07902052B2

公开(公告)日：2011-03-08

申请号：US12013825

申请日：2008-01-14

Applicant: James S. Im

Inventor： James S. Im

IPC: H01L21/20 ,  H01L21/36

CPC classification number: B23K26/0673 ,  B23K26/0622 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/067 ,  B23K26/12 ,  B23K26/127 ,  B23K26/128 ,  H01L21/02686 ,  H01L21/2026 ,  Y10S117/904 ,  Y10T428/24802

Abstract: A process and system are provided for processing at least one section of each of a plurality of semiconductor film samples. In these process and system, the irradiation beam source is controlled to emit successive irradiation beam pulses at a predetermined repetition rate. Using such emitted beam pulses, at least one section of one of the semiconductor film samples is irradiated using a first sequential lateral solidification (“SLS”) technique and/or a first uniform small grained material (“UGS”) techniques to process the such section(s) of the first sample. Upon the completion of the processing of this section of the first sample, the beam pulses are redirected to impinge at least one section of a second sample of the semiconductor film samples. Then, using the redirected beam pulses, such section(s) of the second sample are irradiated using a second SLS technique and/or a second UGS technique to process the at least one section of the second sample. The first and second techniques can be different from one another or substantially the same.

Abstract translation: 提供了一种用于处理多个半导体薄膜样品中的每一个的至少一个部分的工艺和系统。 在这些处理和系统中，照射束源被控制以以预定的重复率发射连续的照射光束脉冲。 使用这种发射的光束脉冲，使用第一顺序侧向固化（“SLS”）技术和/或第一均匀小粒度材料（“UGS”）技术照射半导体膜样品之一的至少一个部分，以处理这样的 第一个样本的部分。 在完成第一采样的这一部分的处理之后，光束脉冲被重定向以冲击半导体薄膜样品的第二样品的至少一个部分。 然后，使用重定向光束脉冲，使用第二SLS技术和/或第二UGS技术照射第二样品的这样的部分，以处理第二样品的至少一个部分。 第一和第二技术可以彼此不同或基本上相同。

公开(公告)号：US20100233888A1

公开(公告)日：2010-09-16

申请号：US12757726

申请日：2010-04-09

Applicant: James S. Im

Inventor： James S. Im

IPC: H01L21/268

CPC classification number: B23K26/0676 ,  B23K26/066 ,  B23K26/073 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691

Abstract: An arrangement, process and mask for implementing single-scan continuous motion sequential lateral solidification of a thin film provided on a sample such that artifacts formed at the edges of the beamlets irradiating the thin film are significantly reduced. According to this invention, the edge areas of the previously irradiated and resolidified areas which likely have artifacts provided therein are overlapped by the subsequent beamlets. In this manner, the edge areas of the previously resolidified irradiated areas and artifacts therein are completely melted throughout their thickness. At least the subsequent beamlets are shaped such that the grains of the previously irradiated and resolidified areas which border the edge areas melted by the subsequent beamlets grow into these resolidifying edges areas so as to substantially reduce or eliminate the artifacts.

Abstract translation: 用于实现在样品上提供的薄膜的单扫描连续运动连续横向固化的布置，处理和掩模，使得在辐射薄膜的子束边缘处形成的伪影显着减少。 根据本发明，先前照射和重新固化的区域中可能具有伪像的边缘区域被随后的子束重叠。 以这种方式，先前重新固化的照射区域的边缘区域和其中的伪像在其整个厚度中完全熔化。 至少后续的子束被成形为使得先前照射和重新固化的区域的与随后的子束熔化的边缘区域相邻的区域的晶粒生长成这些再凝固边缘区域，以便基本上减少或消除伪影。

公开(公告)号：US20090242805A1

公开(公告)日：2009-10-01

申请号：US12063814

申请日：2006-08-16

Applicant: James S. Im

Inventor： James S. Im

IPC: A61N5/00

CPC classification number: H01L27/1296 ,  B23K26/0622 ,  B23K26/073 ,  B23K26/0861 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285

Abstract: Under one aspect, a method for processing a thin film includes generating a first set of shaped beamlets from a first laser beam pulse, each of the beamlets of the first set of beamlets having a length defining the y-direction, a width defining the x-direction, and a fluence that is sufficient to substantially melt a film throughout its thickness in an irradiated film region and further being spaced in the x-direction from adjacent beamlets of the first set of beamlets by gaps; irradiating a first region of the film with the first set of shaped beamlets to form a first set of molten zones which laterally crystallize upon cooling to form a first set of crystallized regions including crystal grains that are substantially parallel to the x-direction and having a length and width substantially the same as the length and width of each of the shaped beamlets and being separated from adjacent crystallized regions by gaps substantially the same as the gaps separating the shaped beamlets; generating a second set of shaped beamlets from a second laser beam pulse, each beamlet of the second set of beamlets having a length, width, fluence, and spacing that is substantially the same as the length, width, fluence, and spacing of each beamlet of the first set of beamlets; and continuously scanning the film so as to irradiate a second region of the film with the second set of shaped beamlets to form a second set of molten zones that are displaced in the x-direction from the first set of crystallized regions, wherein at least one molten zone of the second set of molten zones partially overlaps at least one crystallized region of the first set of crystallized regions and crystallizes upon cooling to form elongations of crystals in said at least one crystallized region.

Abstract translation: 在一个方面，一种用于处理薄膜的方法包括从第一激光束脉冲产生第一组成形子束，第一组子束的每个子束具有限定y方向的长度，限定x的宽度 以及足以在照射的膜区域中充分熔化其整个厚度的膜的能量密度，并且还通过间隙在x方向上与第一组子束的相邻子束间隔开; 用第一组成形小梁照射薄膜的第一区域以形成第一组熔融区域，其在冷却时横向结晶以形成第一组结晶区域，其包括基本上平行于x方向的晶粒，并且具有 长度和宽度与每个成形子束的长度和宽度基本相同，并且通过与分离成形子束的间隙基本相同的间隙与相邻结晶区域分离; 从第二激光束脉冲产生第二组成形的子束，第二组子束的每个子束具有与每个子束的长度，宽度，注量和间距基本相同的长度，宽度，注量和间距 的第一组子束; 并且连续地扫描所述膜以便用所述第二组成形小射束照射所述膜的第二区域，以形成从所述第一组结晶区域沿x方向位移的第二组熔融区域，其中至少一个 所述第二组熔融区的熔融区部分地与所述第一组结晶区域的至少一个结晶区域重叠，并且在冷却时结晶，以在所述至少一个结晶区域中形成晶体的延伸。