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公开(公告)号：US07655495B2
公开(公告)日：2010-02-02
申请号：US11623977
申请日：2007-01-17
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , H01L21/76819 , H01L21/76834 , H01L21/76838 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14687
摘要： A CMOS image sensor array and method of fabrication wherein the sensor includes Copper (Cu) metallization levels allowing for incorporation of a thinner interlevel dielectric stack with improved thickness uniformity to result in a pixel array exhibiting increased light sensitivity. In the sensor array, each Cu metallization level includes a Cu metal wire structure formed at locations between each array pixel and, a barrier material layer is formed on top each Cu metal wire structure that traverses the pixel optical path. By implementing a single mask or self-aligned mask methodology, a single etch is conducted to completely remove the interlevel dielectric and barrier layers that traverse the optical path. The etched opening is then refilled with dielectric material. Prior to depositing the refill dielectric, a layer of either reflective or absorptive material is formed along the sidewalls of the etched opening to improve sensitivity of the pixels by either reflecting light to the underlying photodiode or by eliminating light reflections.
摘要翻译： CMOS图像传感器阵列和制造方法，其中传感器包括铜（Cu）金属化水平，允许结合更薄的层间电介质叠层，具有改进的厚度均匀性，以产生呈现增加的光敏度的像素阵列。 在传感器阵列中，每个Cu金属化层包括在每个阵列像素之间的位置处形成的Cu金属线结构，并且阻挡材料层形成在穿过像素光路的每个Cu金属线结构上。 通过实现单掩模或自对准掩模方法，进行单次蚀刻以完全去除穿过光路的层间电介质层和阻挡层。 然后将蚀刻的开口用电介质材料重新填充。 在沉积再充填电介质之前，沿蚀刻开口的侧壁形成反射或吸收材料层，以通过将光反射到下面的光电二极管或通过消除光反射来提高像素的灵敏度。
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12.发明授权Anti-blooming pixel sensor cell with active neutral density filter, methods of manufacture, and design structure 有权具有活性中性密度滤光片的防晕像素传感器单元，制造方法和设计结构公开(公告)号：US08618588B2
公开(公告)日：2013-12-31
申请号：US12915888
申请日：2010-10-29
申请人： Kristin M. Ackerson , Jeffrey P. Gambino , Mark D. Jaffe , Robert K. Leidy , Richard J. Rassel , Robert M. Rassel
发明人： Kristin M. Ackerson , Jeffrey P. Gambino , Mark D. Jaffe , Robert K. Leidy , Richard J. Rassel , Robert M. Rassel
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H04N5/238 , H01L27/14623 , H01L27/14625 , H01L27/14685 , H04N5/3591
摘要： A method of preventing blooming in a pixel array includes affecting an amount of light that impinges on a photoelectric conversion element by adjusting a transmissivity of an electrochromic element based on an output of the photoelectric conversion element.
摘要翻译： 防止像素阵列中的起霜的方法包括通过基于光电转换元件的输出调节电致变色元件的透射率来影响照射到光电转换元件上的光量。
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公开(公告)号：US20090302406A1
公开(公告)日：2009-12-10
申请号：US12132875
申请日：2008-06-04
CPC分类号： H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636
摘要： A plurality of image sensor structures and a plurality of methods for fabricating the plurality of image sensor structures provide for inhibited cracking and delamination of a lens capping layer with respect to a planarizing layer within the plurality of image sensor structures. Particular image sensor structures and related methods include at least one dummy lens layer of different dimensions than active lens layer located over a circuitry portion of a substrate within the particular image sensor structures. Additional particular image sensor structures include at least one of an aperture within the planarizing layer and a sloped endwall of the planarizing layer located over a circuitry portion within the particular image sensor structures.
摘要翻译： 多个图像传感器结构和用于制造多个图像传感器结构的多种方法提供了相对于多个图像传感器结构内的平坦化层的透镜封盖层的抑制性破裂和分层。 特定的图像传感器结构和相关方法包括与位于特定图像传感器结构内的衬底的电路部分之上的有源透镜层不同的至少一个虚拟透镜层。 另外特定的图像传感器结构包括平坦化层内的孔径和位于特定图像传感器结构内的电路部分上方的平坦化层的倾斜端壁中的至少一个。
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公开(公告)号：US07928527B2
公开(公告)日：2011-04-19
申请号：US12132875
申请日：2008-06-04
IPC分类号： H01L29/72
CPC分类号： H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636
摘要： A plurality of image sensor structures and a plurality of methods for fabricating the plurality of image sensor structures provide for inhibited cracking and delamination of a lens capping layer with respect to a planarizing layer within the plurality of image sensor structures. Particular image sensor structures and related methods include at least one dummy lens layer of different dimensions than active lens layer located over a circuitry portion of a substrate within the particular image sensor structures. Additional particular image sensor structures include at least one of an aperture within the planarizing layer and a sloped endwall of the planarizing layer located over a circuitry portion within the particular image sensor structures.
摘要翻译： 多个图像传感器结构和用于制造多个图像传感器结构的多种方法提供了相对于多个图像传感器结构内的平坦化层的透镜封盖层的抑制性破裂和分层。 特定的图像传感器结构和相关方法包括与位于特定图像传感器结构内的衬底的电路部分之上的有源透镜层不同的至少一个虚拟透镜层。 另外特定的图像传感器结构包括平坦化层内的孔径和位于特定图像传感器结构内的电路部分上方的平坦化层的倾斜端壁中的至少一个。
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15.发明授权Image sensor including spatially different active and dark pixel interconnect patterns 有权图像传感器包括空间不同的有源和暗像素互连图案公开(公告)号：US07825416B2
公开(公告)日：2010-11-02
申请号：US12423055
申请日：2009-04-14
IPC分类号： H01L29/786
CPC分类号： H01L27/14636 , H01L27/14603 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14632 , H01L27/14645 , H01L27/14687
摘要： An interconnect layout, an image sensor including the interconnect layout and a method for fabricating the image sensor each use a first electrically active physical interconnect layout pattern within an active pixel region and a second electrically active physical interconnect layout pattern spatially different than the first electrically active physical interconnect layout pattern within a dark pixel region. The second electrically active physical interconnect layout pattern includes at least one electrically active interconnect layer interposed between a light shield layer and a photosensor region aligned therebeneath, thus generally providing a higher wiring density. The higher wiring density within the second layout pattern provides that that the image sensor may be fabricated with enhanced manufacturing efficiency and a reduction of metallization levels.
摘要翻译： 互连布局，包括互连布局的图像传感器和用于制造图像传感器的方法各自使用有源像素区域内的第一电活性物理互连布局图案和在空间上不同于第一电活动的第二电活动物理互连布局图案 物理互连布局图案在暗像素区域内。 第二电活动物理互连布局图案包括插入在遮光层和在其下对准的光电传感器区域之间的至少一个电活动互连层，因此通常提供更高的布线密度。 在第二布局图案中更高的布线密度提供了图像传感器可以制造成具有增强的制造效率和金属化水平的降低。
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16.发明申请IMAGE SENSOR INCLUDING SPATIALLY DIFFERENT ACTIVE AND DARK PIXEL INTERCONNECT PATTERNS 有权图像传感器包括空间不同的主动和深色像素互连图案公开(公告)号：US20090224349A1
公开(公告)日：2009-09-10
申请号：US12423055
申请日：2009-04-14
IPC分类号： H01L31/0232 , H01L31/0224
CPC分类号： H01L27/14636 , H01L27/14603 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14632 , H01L27/14645 , H01L27/14687
摘要： An interconnect layout, an image sensor including the interconnect layout and a method for fabricating the image sensor each use a first electrically active physical interconnect layout pattern within an active pixel region and a second electrically active physical interconnect layout pattern spatially different than the first electrically active physical interconnect layout pattern within a dark pixel region. The second electrically active physical interconnect layout pattern includes at least one electrically active interconnect layer interposed between a light shield layer and a photosensor region aligned therebeneath, thus generally providing a higher wiring density. The higher wiring density within the second layout pattern provides that that the image sensor may be fabricated with enhanced manufacturing efficiency and a reduction of metallization levels.
摘要翻译： 互连布局，包括互连布局的图像传感器和用于制造图像传感器的方法各自使用有源像素区域内的第一电活性物理互连布局图案和在空间上不同于第一电活动的第二电活动物理互连布局图案 物理互连布局图案在暗像素区域内。 第二电活动物理互连布局图案包括插入在遮光层和在其下对准的光电传感器区域之间的至少一个电活动互连层，因此通常提供更高的布线密度。 在第二布局图案中更高的布线密度提供了图像传感器可以制造成具有增强的制造效率和金属化水平的降低。
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17.发明授权Image sensor including spatially different active and dark pixel interconnect patterns 有权图像传感器包括空间不同的有源和暗像素互连图案公开(公告)号：US07537951B2
公开(公告)日：2009-05-26
申请号：US11560019
申请日：2006-11-15
IPC分类号： H01L21/00
CPC分类号： H01L27/14636 , H01L27/14603 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14632 , H01L27/14645 , H01L27/14687
摘要： An interconnect layout, an image sensor including the interconnect layout and a method for fabricating the image sensor each use a first electrically active physical interconnect layout pattern within an active pixel region and a second electrically active physical interconnect layout pattern spatially different than the first electrically active physical interconnect layout pattern within a dark pixel region. The second electrically active physical interconnect layout pattern includes at least one electrically active interconnect layer interposed between a light shield layer and a photosensor region aligned therebeneath, thus generally providing a higher wiring density. The higher wiring density within the second layout pattern provides that that the image sensor may be fabricated with enhanced manufacturing efficiency and a reduction of metallization levels.
摘要翻译： 互连布局，包括互连布局的图像传感器和用于制造图像传感器的方法各自使用有源像素区域内的第一电活性物理互连布局图案和在空间上不同于第一电活动的第二电活动物理互连布局图案 物理互连布局图案在暗像素区域内。 第二电活动物理互连布局图案包括插入在遮光层和在其下对准的光电传感器区域之间的至少一个电活动互连层，因此通常提供更高的布线密度。 在第二布局图案中更高的布线密度提供了图像传感器可以制造成具有增强的制造效率和金属化水平的降低。
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公开(公告)号：US08168474B1
公开(公告)日：2012-05-01
申请号：US12987402
申请日：2011-01-10
申请人： James W. Adkisson , Panglijen Candra , Thomas J. Dunbar , Jeffrey P. Gambino , Mark D. Jaffe , Robert K. Leidy , Yen L. Lim
发明人： James W. Adkisson , Panglijen Candra , Thomas J. Dunbar , Jeffrey P. Gambino , Mark D. Jaffe , Robert K. Leidy , Yen L. Lim
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , H01L21/76898
摘要： Systems and methods simultaneously form first openings and second openings in a substrate. The first openings are formed smaller than the second openings. The method also simultaneously forms a first material in the first openings and the second openings. The first material fills the first openings, and the first material lines the second openings. The method forms a second material different than the first material in the second openings. The second material fills the second openings. The method forms a plurality of integrated circuit structures over the first material and the second material within the second openings. The method applies mechanical stress to the substrate to cause the substrate to split along the first openings.
摘要翻译： 系统和方法同时在衬底中形成第一开口和第二开口。 第一开口形成为小于第二开口。 该方法还同时在第一开口和第二开口中形成第一材料。 第一材料填充第一开口，第一材料将第二开口排列。 该方法形成与第二开口中的第一材料不同的第二材料。 第二材料填充第二开口。 该方法在第二开口内的第一材料和第二材料上形成多个集成电路结构。 该方法对基板施加机械应力以使基板沿着第一开口分开。
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19.发明申请IMAGE SENSOR INCLUDING SPATIALLY DIFFERENT ACTIVE AND DARK PIXEL INTERCONNECT PATTERNS 有权图像传感器包括空间不同的主动和深色像素互连图案公开(公告)号：US20080111159A1
公开(公告)日：2008-05-15
申请号：US11560019
申请日：2006-11-15
IPC分类号： H01L31/101 , H01L29/765 , H01L23/52 , H01L21/339
CPC分类号： H01L27/14636 , H01L27/14603 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14632 , H01L27/14645 , H01L27/14687
摘要： An interconnect layout, an image sensor including the interconnect layout and a method for fabricating the image sensor each use a first electrically active physical interconnect layout pattern within an active pixel region and a second electrically active physical interconnect layout pattern spatially different than the first electrically active physical interconnect layout pattern within a dark pixel region. The second electrically active physical interconnect layout pattern includes at least one electrically active interconnect layer interposed between a light shield layer and a photosensor region aligned therebeneath, thus generally providing a higher wiring density. The higher wiring density within the second layout pattern provides that that the image sensor may be fabricated with enhanced manufacturing efficiency and a reduction of metallization levels.
摘要翻译： 互连布局，包括互连布局的图像传感器和用于制造图像传感器的方法各自使用有源像素区域内的第一电活性物理互连布局图案和在空间上不同于第一电活动的第二电活动物理互连布局图案 物理互连布局图案在暗像素区域内。 第二电活动物理互连布局图案包括插入在遮光层和在其下对准的光电传感器区域之间的至少一个电活动互连层，因此通常提供更高的布线密度。 在第二布局图案中更高的布线密度提供了图像传感器可以制造成具有增强的制造效率和金属化水平的降低。
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公开(公告)号：US08409899B2
公开(公告)日：2013-04-02
申请号：US13025681
申请日：2011-02-11
IPC分类号： H01L29/72
CPC分类号： H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636
摘要： A plurality of image sensor structures and a plurality of methods for fabricating the plurality of image sensor structures provide for inhibited cracking and delamination of a lens capping layer with respect to a planarizing layer within the plurality of image sensor structures. Particular image sensor structures and related methods include at least one dummy lens layer of different dimensions than active lens layer located over a circuitry portion of a substrate within the particular image sensor structures. Additional particular image sensor structures include at least one of an aperture within the planarizing layer and a sloped endwall of the planarizing layer located over a circuitry portion within the particular image sensor structures.
摘要翻译： 多个图像传感器结构和用于制造多个图像传感器结构的多种方法提供了相对于多个图像传感器结构内的平坦化层的透镜封盖层的抑制性破裂和分层。 特定的图像传感器结构和相关方法包括与位于特定图像传感器结构内的衬底的电路部分之上的有源透镜层不同的至少一个虚拟透镜层。 另外特定的图像传感器结构包括平坦化层内的孔径和位于特定图像传感器结构内的电路部分上方的平坦化层的倾斜端壁中的至少一个。
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