公开(公告)号：US11181792B2

公开(公告)日：2021-11-23

申请号：US16787054

申请日：2020-02-11

Applicant: Japan Display Inc.

Inventor： Toshihide Jinnai ,  Hajime Watakabe ,  Akihiro Hanada ,  Ryo Onodera ,  Isao Suzumura

IPC: G02F1/1362 ,  G02F1/1368 ,  H01L29/786 ,  H01L27/12 ,  H01L27/32

Abstract: A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductor 109 is covered by a first insulating film, a first drain electrode 110 is connected to the oxide semiconductor 109 via a first through hole 132 formed in the first insulating film, a first source electrode 111 is connected to the oxide semiconductor 109 via second through hole 133 formed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrode 110 and the first source electrode 111, a drain wiring connects 12 to the first drain electrode 110 via a third through hole 130 formed in the second insulating film, a source wiring 122 is connected to the first source electrode 111 via a fourth through hole 131 formed in the second insulating film.

公开(公告)号：US12166131B2

公开(公告)日：2024-12-10

申请号：US18328788

申请日：2023-06-05

Applicant: Japan Display Inc.

Inventor： Hajime Watakabe ,  Tomoyuki Ito ,  Toshihide Jinnai ,  Isao Suzumura ,  Akihiro Hanada ,  Ryo Onodera

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/426 ,  H01L21/4757 ,  H01L21/4763 ,  H01L29/24 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1368

Abstract: A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

公开(公告)号：US12085823B2

公开(公告)日：2024-09-10

申请号：US17987887

申请日：2022-11-16

Applicant: Japan Display Inc.

Inventor： Toshihide Jinnai ,  Hajime Watakabe ,  Akihiro Hanada ,  Ryo Onodera ,  Isao Suzumura

IPC: G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786 ,  H10K59/131

CPC classification number: G02F1/136286 ,  G02F1/136227 ,  G02F1/1368 ,  H01L27/124 ,  H01L29/78672 ,  H10K59/131 ,  G02F2201/123

Abstract: A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductor 109 is covered by a first insulating film, a first drain electrode 110 is connected to the oxide semiconductor 109 via a first through hole 132 formed in the first insulating film, a first source electrode 111 is connected to the oxide semiconductor 109 via second through hole 133 formed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrode 110 and the first source electrode 111, a drain wiring connects 12 to the first drain electrode 110 via a third through hole 130 formed in the second insulating film, a source wiring 122 is connected to the first source electrode 111 via a fourth through hole 131 formed in the second insulating film.

公开(公告)号：US11894387B2

公开(公告)日：2024-02-06

申请号：US17747049

申请日：2022-05-18

Applicant: Japan Display Inc.

Inventor： Hajime Watakabe ,  Toshihide Jinnai ,  Ryo Onodera ,  Akihiro Hanada

IPC: H01L27/00 ,  H01L29/00 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1285 ,  H01L29/66742 ,  H01L29/7869

Abstract: There is provided a technique that enables a reduction in the display failure of a display device and the improvement of the yields of the display device in a display device that adopts a semiconductor device including a thin film transistor using an oxide semiconductor. A semiconductor device according to an embodiment includes a thin film transistor having an oxide semiconductor. The oxide semiconductor has a drain region, a source region, and a channel region provided between the drain region and the source region. The thin film transistor includes a gate insulating film provided on the channel region, an aluminum oxide film provided on the gate insulating film, an insulating film provided on the aluminum oxide film, and a gate electrode provided on the insulating film.

公开(公告)号：US11177388B2

公开(公告)日：2021-11-16

申请号：US16785662

申请日：2020-02-10

Applicant: Japan Display Inc.

Inventor： Hajime Watakabe ,  Tomoyuki Ito ,  Toshihide Jinnai ,  Isao Suzumura ,  Akihiro Hanada ,  Ryo Onodera

IPC: H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  H01L29/423 ,  H01L29/49 ,  H01L21/02 ,  H01L21/426 ,  H01L21/4757 ,  H01L21/4763 ,  H01L29/66 ,  G02F1/1368

Abstract: A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

公开(公告)号：US10007138B2

公开(公告)日：2018-06-26

申请号：US14884026

申请日：2015-10-15

Applicant: Japan Display Inc.

Inventor： Toshihide Jinnai ,  Hirofumi Mizukoshi

IPC: G02F1/1343 ,  G02F1/1333 ,  G02F1/1362 ,  H01L27/12

CPC classification number: G02F1/133345 ,  G02F1/134363 ,  G02F1/136286 ,  G02F2001/134372 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1255

Abstract: According to one embodiment, a display device includes a semiconductor layer, a first insulating film covering the semiconductor layer, a gate line extended in a first direction on the first insulating film to intersect the semiconductor layer, a second insulating film covering the gate line, a first common electrode formed on the second insulating film, a third insulating film covering the first common electrode, a source line which is extended in a second direction on the third insulating film and which is in contact with the semiconductor layer, and a fourth insulating film which covers the source line and which has a thickness greater than a thickness of the third insulating film.