公开(公告)号：US11521990B2

公开(公告)日：2022-12-06

申请号：US17336620

申请日：2021-06-02

Applicant: Japan Display Inc.

Inventor： Isao Suzumura ,  Kazufumi Watabe ,  Yoshinori Ishii ,  Hidekazu Miyake ,  Yohei Yamaguchi

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L29/51 ,  H01L29/24 ,  G02F1/1368 ,  G02F1/133 ,  G02F1/1362 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49

Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first. TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

公开(公告)号：US11488984B2

公开(公告)日：2022-11-01

申请号：US16733435

申请日：2020-01-03

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/822 ,  H01L21/311 ,  G02F1/1333 ,  G02F1/1362

Abstract: A wiring structure includes a structure body including a pattern, a first conductive layer above the structure body, the first conductive layer having a shape, the shape crossing an edge of a pattern of the structure body and reflecting a step of the edge of the pattern of the structure body, a first insulating layer above the first conductive layer, the first insulating layer having a first opening overlapping the edge of the pattern of the structure body in a plane view, and r is arranged with a second opening in a region overlapping the semiconductor layer in a plane view, a second conductive layer in the first opening, the second conductive layer being connected to the first conductive layer.

公开(公告)号：US11374025B2

公开(公告)日：2022-06-28

申请号：US16816776

申请日：2020-03-12

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi

IPC: H01L27/12 ,  H01L27/01 ,  H01L29/66 ,  H01L29/786 ,  H01L29/40 ,  H01L29/423 ,  G02F1/1343 ,  G09G3/36 ,  G02F1/1368

Abstract: The purpose of the invention is to form a stable oxide semiconductor TFT in a display device. The concrete structure is: A display device having a TFT substrate that includes a TFT having an oxide semiconductor layer comprising: the oxide semiconductor layer is formed on a first insulating film that is formed by a silicon oxide layer, the oxide semiconductor layer and an aluminum oxide film are directly formed on the first insulating film. The first insulating film becomes oxygen rich when the aluminum oxide film is formed on the first insulating film by sputtering. Oxygens in the first insulating film is effectively confined in the first insulating film, eventually, the oxygens diffuse to the oxide semiconductor for a stable operation of the oxide semiconductor TFT.

公开(公告)号：US11348948B2

公开(公告)日：2022-05-31

申请号：US16931454

申请日：2020-07-17

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Yohei Yamaguchi ,  Hirokazu Watanabe ,  Isao Suzumura

IPC: H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L27/12 ,  G02F1/1368 ,  H01L27/32 ,  H01L21/02

Abstract: The purpose of the present invention is to realize the display device having thin film transistors of the oxide semiconductor of stable characteristics. An example of the concrete structure is that: A display device having a substrate including a display area, plural pixels formed in the display area, the pixel includes a first thin film transistor having an oxide semiconductor film, a first insulating film made of a first silicon oxide on a first side of the oxide semiconductor film, a second insulating film made of a second silicon oxide on a second side of the oxide semiconductor film, wherein oxygen desorption amount per unit area from the first insulating film is larger than that from the second insulating film, when measured by TDS (Thermal Desorption Spectrometry) provided M/z=32 and a measuring range in temperature is from 100 centigrade to 500 centigrade.

公开(公告)号：US11177363B2

公开(公告)日：2021-11-16

申请号：US16565760

申请日：2019-09-10

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi ,  Isao Suzumura

IPC: H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L29/51 ,  H01L27/146 ,  H01L29/423 ,  H01L27/32 ,  G02F1/1362 ,  G02F1/1368

Abstract: The purpose of the present invention is to realize the TFT of the oxide semiconductor having a superior characteristics and high reliability during the product's life. The structure of the present invention is as follows. A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor, a first gate insulating film is formed on the first oxide semiconductor, the first gate insulating film is a laminated film of a first silicon oxide film and a first aluminum oxide film, a gate electrode is formed on the first aluminum film.

公开(公告)号：US10804297B2

公开(公告)日：2020-10-13

申请号：US16446481

申请日：2019-06-19

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi

IPC: H01L27/12 ,  H01L29/786 ,  G02F1/1368 ,  G02F1/1333 ,  H01L29/417 ,  H01L27/32 ,  G02F1/1343 ,  G02F1/1362

Abstract: The purpose of the present invention is to improve reliability of the TFT of the oxide semiconductor. The feature of the invention is: A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor, a first gate insulating film is formed under the first oxide semiconductor, a first gate electrode is formed under the first gate insulating film, an interlayer insulating film is formed on the first oxide semiconductor; a drain wiring, which connects with the first oxide semiconductor, and a source wiring, which connects with the first oxide semiconductor, are formed on the interlayer insulating film; the drain wiring or the source wiring is a laminated structure of a second oxide semiconductor and a first metal, the second oxide semiconductor is under the first metal.

公开(公告)号：US10373984B2

公开(公告)日：2019-08-06

申请号：US15895139

申请日：2018-02-13

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi

IPC: H01L27/12 ,  H01L29/786 ,  G02F1/1368 ,  G02F1/1333 ,  H01L27/32 ,  G02F1/1343 ,  G02F1/1362

Abstract: The purpose of the present invention is to improve reliability of the TFT of the oxide semiconductor. The feature of the invention is: A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor, a first gate insulating film is formed under the first oxide semiconductor, a first gate electrode is formed under the first gate insulating film, an interlayer insulating film is formed on the first oxide semiconductor; a drain wiring, which connects with the first oxide semiconductor, and a source wiring, which connects with the first oxide semiconductor, are formed on the interlayer insulating film; the drain wiring or the source wiring is a laminated structure of a second oxide semiconductor and a first metal, the second oxide semiconductor is under the first metal.

公开(公告)号：US10361229B2

公开(公告)日：2019-07-23

申请号：US16004546

申请日：2018-06-11

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi ,  Isao Suzumura ,  Hidekazu Miyake

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  G02F1/1362 ,  G02F1/1368

Abstract: The invention allows formation of LTPS TFTs and TAOS TFTs on the same substrate. The invention provides a display device including a substrate having a display area in which pixels are formed. The pixels include a first TFT made of a TAOS. The drain of the first TFT is formed of first LTPS 112. The source of the first TFT is formed of second LTPS 113. The first LTPS 112 is connected to a first electrode 106 via a first through-hole 108 formed in an insulating film 105 covering the first TFT. The second LTPS 113 is connected to a second electrode 107 via a second through-hole 108 formed in the insulating film 105 covering the first TFT.

公开(公告)号：US09947798B2

公开(公告)日：2018-04-17

申请号：US14804395

申请日：2015-07-21

Applicant: Japan Display Inc.

Inventor： Hidekazu Miyake ,  Arichika Ishida ,  Norihiro Uemura ,  Hiroto Miyake ,  Isao Suzumura ,  Yohei Yamaguchi

IPC: G02F1/136 ,  H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  G02F1/1368

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  G02F2001/13685 ,  G02F2202/104 ,  H01L27/1218 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696

Abstract: According to one embodiment, a display device includes thin-film transistor. The thin-film transistor includes a first semiconductor layer, a first insulating film, a gate electrode, a second insulating film, a second semiconductor layer, a first electrode and a second electrode. The gap between the bottom surface of the gate electrode and the upper surface of the first channel region of the first semiconductor layer is larger than the gap between the upper surface of the gate electrode and the bottom surface of the second channel region of the second semiconductor layer.

公开(公告)号：US09618813B2

公开(公告)日：2017-04-11

申请号：US14990201

申请日：2016-01-07

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi ,  Arichika Ishida ,  Hidekazu Miyake ,  Hiroto Miyake ,  Isao Suzumura

IPC: G02F1/1362 ,  H01L29/786 ,  H01L27/12 ,  G02F1/1368

CPC classification number: G02F1/1368 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136209 ,  G02F1/136227 ,  G02F2001/136218 ,  G02F2001/13685 ,  G02F2202/10 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/78633 ,  H01L29/7869

Abstract: According to one embodiment, a display device includes an insulating substrate, a thin-film transistor including a semiconductor layer formed on a layer above the insulating substrate, a gate electrode which at least partly overlaps the semiconductor layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer, and a light shielding layer formed between the thin-film transistor and the insulating substrate to at least partly overlap the semiconductor layer, the light shielding layer electrically connected to the gate electrode.