公开(公告)号：US08428091B2

公开(公告)日：2013-04-23

申请号：US12973481

申请日：2010-12-20

Applicant: Mi-Ran Park ,  O-Kyun Kwon ,  Byung-seok Choi ,  Dae Kon Oh

Inventor： Mi-Ran Park ,  O-Kyun Kwon ,  Byung-seok Choi ,  Dae Kon Oh

IPC: H01S3/10 ,  H01S3/04 ,  H01S5/00

CPC classification number: H01S5/423 ,  H01S5/0085 ,  H01S5/02415 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/4012 ,  H01S5/4087 ,  H01S5/50

Abstract: Provided is a tunable laser module emitting an optical signal having high speed, high power and wideband wavelength tuning. The tunable laser module includes a laser array configured to emit an optical signal having a plurality of different lasing wavelengths, a temperature controller configured to change a temperature of the laser array, and an optical integration device configured to modulate or amplify the optical signal at a side of the laser array opposing the temperature controller.

Abstract translation: 提供了一种发射具有高速度，高功率和宽带波长调谐的光信号的可调谐激光模块。 可调谐激光器模块包括配置成发射具有多个不同的激光波长的光信号的激光器阵列，配置成改变激光器阵列的温度的温度控制器，以及配置成在一个或多个激光器阵列处调制或放大光信号的光学积分装置 激光器阵列的一侧与温度控制器相对。

公开(公告)号：US07680162B2

公开(公告)日：2010-03-16

申请号：US11951133

申请日：2007-12-05

Applicant: Mi-Ran Park ,  O-Kyun Kwon

Inventor： Mi-Ran Park ,  O-Kyun Kwon

IPC: H01S3/04

CPC classification number: H01S5/18308 ,  B82Y20/00 ,  H01S5/024 ,  H01S5/02461 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18333 ,  H01S5/3095 ,  H01S5/34306 ,  H01S2301/18

Abstract: Provided is a vertical cavity surface emitting device. The surface emitting device includes a lower mirror layer emitting light having a long wavelength, an active layer providing an optical gain, a tunnel junction layer for confining a current, and an upper mirror layer, which are sequentially stacked on a compound semiconductor substrate, wherein a heat release layer is formed on side surfaces of at least one of the active layer, the tunnel junction layer and the upper mirror layer by using etching process, and the heat release layer has greater thermal conductivity than at least one of the active layer, the tunnel junction layer and the upper mirror layer.

Abstract translation: 提供了一种垂直腔表面发射装置。 表面发射器件包括顺序地堆叠在化合物半导体衬底上的具有长波长的光的下反射镜层，提供光学增益的有源层，用于限制电流的隧道结层和上镜面层，其中 通过使用蚀刻工艺在活性层，隧道结层和上镜面层中的至少一个的侧表面上形成放热层，并且散热层的热导率比活性层， 隧道结层和上镜面层。

公开(公告)号：US20080137692A1

公开(公告)日：2008-06-12

申请号：US11951133

申请日：2007-12-05

Applicant: Mi-Ran Park ,  O-Kyun Kwon

Inventor： Mi-Ran Park ,  O-Kyun Kwon

IPC: H01S5/00

CPC classification number: H01S5/18308 ,  B82Y20/00 ,  H01S5/024 ,  H01S5/02461 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18333 ,  H01S5/3095 ,  H01S5/34306 ,  H01S2301/18

Abstract: Provided is a vertical cavity surface emitting device. The surface emitting device includes a lower mirror layer emitting light having a long wavelength, an active layer providing an optical gain, a tunnel junction layer for confining a current, and an upper mirror layer, which are sequentially stacked on a compound semiconductor substrate, wherein a heat release layer is formed on side surfaces of at least one of the active layer, the tunnel junction layer and the upper mirror layer by using etching process, and the heat release layer has greater thermal conductivity than at least one of the active layer, the tunnel junction layer and the upper mirror layer.

Abstract translation: 提供了一种垂直腔表面发射装置。 表面发射器件包括顺序地堆叠在化合物半导体衬底上的具有长波长的光的下反射镜层，提供光学增益的有源层，用于限制电流的隧道结层和上镜面层，其中 通过使用蚀刻工艺在活性层，隧道结层和上镜面层中的至少一个的侧表面上形成放热层，并且散热层的热导率比活性层， 隧道结层和上镜面层。

公开(公告)号：US08710546B2

公开(公告)日：2014-04-29

申请号：US13191758

申请日：2011-07-27

Applicant: Mi-Ran Park ,  O-Kyun Kwon

Inventor： Mi-Ran Park ,  O-Kyun Kwon

IPC: H01L31/107 ,  H01L31/02

CPC classification number: H01L31/107 ,  H01L31/02027 ,  H01L31/02161 ,  H01L31/184 ,  Y02E10/544

Abstract: Provided are an avalanche photodiode and a method of fabricating the same. The method of fabricating the avalanche photodiode includes sequentially forming a compound semiconductor absorption layer, a compound semiconductor grading layer, a charge sheet layer, a compound semiconductor amplification layer, a selective wet etch layer, and a p-type conductive layer on an n-type substrate through a metal organic chemical vapor deposition process.

Abstract translation: 提供了一种雪崩光电二极管及其制造方法。 制造雪崩光电二极管的方法包括：在n型衬底上依次形成化合物半导体吸收层，化合物半导体分级层，电荷层，化合物半导体放大层，选择性湿蚀刻层和p型导电层。 通过金属有机化学气相沉积工艺形成衬底。

公开(公告)号：US08586020B2

公开(公告)日：2013-11-19

申请号：US13173783

申请日：2011-06-30

Applicant: Soo-Chang Song ,  Thrimoorthy Potta ,  Mi-Ran Park

Inventor： Soo-Chang Song ,  Thrimoorthy Potta ,  Mi-Ran Park

IPC: A61K31/74 ,  C12N9/96 ,  C08G69/48 ,  C08G63/91 ,  A61K47/48

CPC classification number: A61L27/18 ,  A61L27/52 ,  A61L27/54 ,  A61L2300/80 ,  C08G79/02 ,  C08G79/025 ,  C08J3/075 ,  C08J2385/02 ,  C08L85/02

Abstract: Provided are a use of chemically-crosslinkable, poly(organophosphazene)s for biomaterials, chemically-crosslinkable poly(organophosphazene)s with a physiologically active substance covalently-bonded thereto, a use thereof for biomaterials, and a process for preparing the same. The chemical crosslinkings can be made by UV irradiation, and/or a crosslinker, and/or an additive, and/or an enzyme, and/or a mixing of at least one polymer.

Abstract translation: 提供了用于生物材料的化学交联的聚（有机膦腈），与共价键合的生理活性物质的化学交联的聚（有机膦腈），其生物材料的用途及其制备方法的用途。 化学交联可以通过UV照射和/或交联剂，/或添加剂和/或酶进行，和/或至少一种聚合物的混合。