公开(公告)号：US08428091B2

公开(公告)日：2013-04-23

申请号：US12973481

申请日：2010-12-20

Applicant: Mi-Ran Park ,  O-Kyun Kwon ,  Byung-seok Choi ,  Dae Kon Oh

Inventor： Mi-Ran Park ,  O-Kyun Kwon ,  Byung-seok Choi ,  Dae Kon Oh

IPC: H01S3/10 ,  H01S3/04 ,  H01S5/00

CPC classification number: H01S5/423 ,  H01S5/0085 ,  H01S5/02415 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/4012 ,  H01S5/4087 ,  H01S5/50

Abstract: Provided is a tunable laser module emitting an optical signal having high speed, high power and wideband wavelength tuning. The tunable laser module includes a laser array configured to emit an optical signal having a plurality of different lasing wavelengths, a temperature controller configured to change a temperature of the laser array, and an optical integration device configured to modulate or amplify the optical signal at a side of the laser array opposing the temperature controller.

Abstract translation: 提供了一种发射具有高速度，高功率和宽带波长调谐的光信号的可调谐激光模块。 可调谐激光器模块包括配置成发射具有多个不同的激光波长的光信号的激光器阵列，配置成改变激光器阵列的温度的温度控制器，以及配置成在一个或多个激光器阵列处调制或放大光信号的光学积分装置 激光器阵列的一侧与温度控制器相对。

公开(公告)号：US20100316383A1

公开(公告)日：2010-12-16

申请号：US12582211

申请日：2009-10-20

Applicant: Hyun Soo KIM ,  Kisoo Kim ,  Dong Churl Kim ,  Byung-Seok Choi ,  O-Kyun Kwon ,  Dae Kon Oh

Inventor： Hyun Soo KIM ,  Kisoo Kim ,  Dong Churl Kim ,  Byung-Seok Choi ,  O-Kyun Kwon ,  Dae Kon Oh

IPC: H04J14/02

CPC classification number: H04J14/0282

Abstract: Provided is a wavelength division multiplexed-passive optical network (WDM-PON) apparatus. The WDM-PON includes an optical source unit, an optical mux, and a chirped Bragg grating. The optical source unit generates an optical signal. The optical mux receives the optical signal from the optical source unit through one end of the optical mux, multiplexes the optical signal, and outputs the multiplexed optical signal. The chirped Bragg grating is connected to the other end of the optical mux. The chirped Bragg grating again reflects the optical signal having passed the optical mux to re-input a certain portion of the optical signal into the optical mux and the optical source unit. The optical mux performs a spectrum slicing on the re-inputted optical signal and operates the optical source unit using a channel wavelength of the optical mux as a main oscillation wavelength.

Abstract translation: 提供了一种波分复用无源光网络（WDM-PON）装置。 WDM-PON包括光源单元，光复用器和啁啾布拉格光栅。 光源单元产生光信号。 光复用器通过光复用器的一端从光源单元接收光信号，复用光信号，并输出复用的光信号。 啁啾布拉格光栅连接到光复用器的另一端。 啁啾布拉格光栅再次反射已经通过光复用器的光信号，以将光信号的某一部分重新输入光复用器和光源单元。 光复用器对重新输入的光信号执行频谱分片，并使用光复用器的信道波长作为主振荡波长来操作光源单元。

公开(公告)号：US08594469B2

公开(公告)日：2013-11-26

申请号：US12640627

申请日：2009-12-17

Applicant: Byung-Seok Choi ,  Dae Kon Oh ,  O-Kyun Kwon ,  Dong Churl Kim ,  Kisoo Kim ,  Hyun Soo Kim

Inventor： Byung-Seok Choi ,  Dae Kon Oh ,  O-Kyun Kwon ,  Dong Churl Kim ,  Kisoo Kim ,  Hyun Soo Kim

IPC: G02F1/035

CPC classification number: H01S5/50 ,  G02F1/2955 ,  G02F2001/0155 ,  G02F2001/0156 ,  G02F2202/06 ,  G02F2202/101 ,  G02F2202/102 ,  G02F2203/02 ,  G02F2203/15 ,  G02F2203/20 ,  G02F2203/70

Abstract: An optical amplifier includes a passive waveguide region and an active waveguide region. The passive waveguide region is configured to receive an incident optical signal and adjust a mode of the optical signal. The active waveguide region is integrated to the passive waveguide region and configured to perform gain modulation on the optical signal received from the passive waveguide region by changing density of carriers in response to a current applied to the active waveguide region. Internal loss of the active waveguide region is adjusted to produce a resonance effect and thereby to increase bandwidth of the active waveguide. Therefore, the optical amplifier can have a wide bandwidth under a low-current condition.

Abstract translation: 光放大器包括无源波导区域和有源波导区域。 无源波导区域被配置为接收入射光信号并调整光信号的模式。 有源波导区域被集成到无源波导区域，并被配置为响应于施加到有源波导区域的电流改变载波的密度，对从无源波导区域接收的光信号执行增益调制。 有源波导区域的内部损耗被调节以产生共振效应，从而增加有源波导的带宽。 因此，光放大器可以在低电流条件下具有宽带宽。

公开(公告)号：US20110134513A1

公开(公告)日：2011-06-09

申请号：US12773196

申请日：2010-05-04

Applicant: Dong Churl Kim ,  Byung-seok Choi ,  Hyun Soo Kim ,  Kisoo Kim ,  O-Kyun Kwon ,  Dae Kon Oh

Inventor： Dong Churl Kim ,  Byung-seok Choi ,  Hyun Soo Kim ,  Kisoo Kim ,  O-Kyun Kwon ,  Dae Kon Oh

IPC: H01S5/026 ,  G02B6/26 ,  G02B6/42

CPC classification number: H01S5/0265 ,  G02B6/1228 ,  G02B6/125 ,  G02B6/2813 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/50

Abstract: Provided is an optical device module that can improve miniaturization and integration. The optical device module includes a semiconductor optical amplifier having a buried structure and including a first active layer buried in a clad layer disposed on a first substrate, an optical modulator in which a sidewall of a second active layer disposed in a direction of the first active layer on a second substrate junctioned to the first substrate is exposed, the optical modulator having a ridge structure, and at least one multi-mode interference coupler in which the second active layer junctioned to the first active layer is buried in the clad layer, the multi-mode interference coupler sharing the second active layer on the second substrate between the optical modulator and the semiconductor optical amplifier and integrated with the second optical device.

Abstract translation: 提供了可以改善小型化和集成的光学装置模块。 光学器件模块包括具有掩埋结构的半导体光学放大器，并且包括掩埋在第一衬底上的覆盖层中的第一有源层，光调制器，其中第二有源层的侧壁沿着第一有源层 暴露在与第一衬底相交的第二衬底上的层，光学调制器具有脊结构，以及至少一个多模干涉耦合器，其中与第一有源层结合的第二有源层被掩埋在覆盖层中， 所述多模干涉耦合器在所述光调制器和所述半导体光放大器之间的所述第二基板上共享所述第二有源层并与所述第二光学装置集成。

公开(公告)号：US08804232B2

公开(公告)日：2014-08-12

申请号：US13307067

申请日：2011-11-30

Applicant: Dong Churl Kim ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

Inventor： Dong Churl Kim ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

IPC: H01S5/10

CPC classification number: H01S5/1028 ,  H01S5/0265 ,  H01S5/0425 ,  H01S5/1003 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/2222 ,  H01S2301/16

Abstract: A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type.

Abstract translation: 半导体光学器件包括第一模式转换核心，光放大核心，第二模式转换核心和设置在第一模式转换区域中的光调制核心，光放大区域，第二模式转换区域和光调制 区域，以及至少覆盖光放大芯的侧壁和顶表面的电流阻挡部分。 第一模式转换核心，光放大核心，第二模式转换核心和光调制核心按照命名的顺序沿一个方向布置，并且在对接中彼此连接。 电流阻挡部分包括顺序层叠的第一，第二和第三包层图案。 第二包层图案掺杂有第一导电类型的掺杂剂，并且第一和第三包层图案掺杂有第二导电类型的掺杂剂。

公开(公告)号：US20100092175A1

公开(公告)日：2010-04-15

申请号：US12367431

申请日：2009-02-06

Applicant: Hyun Soo KIM ,  O-Kyun Kwon ,  Dong Churl Kim ,  Byung-Seok Choi ,  Kisoo Kim ,  Dae Kon Oh

Inventor： Hyun Soo KIM ,  O-Kyun Kwon ,  Dong Churl Kim ,  Byung-Seok Choi ,  Kisoo Kim ,  Dae Kon Oh

IPC: H04J14/02 ,  H01S3/16

CPC classification number: H01S5/50 ,  H01S5/026 ,  H01S5/0608 ,  H01S5/06258 ,  H01S5/1014 ,  H01S5/509

Abstract: Provided are a semiconductor optical amplifier and an optical signal processing method using the same. The reflective semiconductor optical amplifier includes: an optical signal amplification region operating to allow a downward optical signal incident from the external to obtain a gain; and an optical signal modulation region connected to the optical signal amplification region and generating a modulated optical signal. The downward optical signal is amplified through a cross gain modulation using the modulated optical signal and is outputted as an upward optical signal.

Abstract translation: 提供了一种半导体光放大器和使用其的光信号处理方法。 反射半导体光放大器包括：光信号放大区域，其操作以允许从外部入射的向下的光信号获得增益; 以及连接到光信号放大区域并产生调制光信号的光信号调制区域。 向下的光信号通过使用调制光信号的交叉增益调制进行放大，并作为向上的光信号输出。

公开(公告)号：US20120281274A1

公开(公告)日：2012-11-08

申请号：US13307067

申请日：2011-11-30

Applicant: Dong Churl KIM ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

Inventor： Dong Churl KIM ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

IPC: H01S5/20 ,  H01L21/04

CPC classification number: H01S5/1028 ,  H01S5/0265 ,  H01S5/0425 ,  H01S5/1003 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/2222 ,  H01S2301/16

Abstract: A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type.

Abstract translation: 半导体光学器件包括第一模式转换核心，光放大核心，第二模式转换核心和设置在第一模式转换区域中的光调制核心，光放大区域，第二模式转换区域和光调制 区域，以及至少覆盖光放大芯的侧壁和顶表面的电流阻挡部分。 第一模式转换核心，光放大核心，第二模式转换核心和光调制核心按照命名的顺序沿一个方向布置，并且在对接中彼此连接。 电流阻挡部分包括顺序层叠的第一，第二和第三包层图案。 第二包层图案掺杂有第一导电类型的掺杂剂，并且第一和第三包层图案掺杂有第二导电类型的掺杂剂。

公开(公告)号：US08149503B2

公开(公告)日：2012-04-03

申请号：US12367431

申请日：2009-02-06

Applicant: Hyun Soo Kim ,  O-Kyun Kwon ,  Dong Churl Kim ,  Byung-Seok Choi ,  Kisoo Kim ,  Dae Kon Oh

Inventor： Hyun Soo Kim ,  O-Kyun Kwon ,  Dong Churl Kim ,  Byung-Seok Choi ,  Kisoo Kim ,  Dae Kon Oh

IPC: H01S3/131 ,  H04J14/02 ,  H04B10/17

CPC classification number: H01S5/50 ,  H01S5/026 ,  H01S5/0608 ,  H01S5/06258 ,  H01S5/1014 ,  H01S5/509

Abstract: Provided are a semiconductor optical amplifier and an optical signal processing method using the same. The reflective semiconductor optical amplifier includes: an optical signal amplification region operating to allow a downward optical signal incident from the external to obtain a gain; and an optical signal modulation region connected to the optical signal amplification region and generating a modulated optical signal. The downward optical signal is amplified through a cross gain modulation using the modulated optical signal and is outputted as an upward optical signal.

Abstract translation: 提供了一种半导体光放大器和使用其的光信号处理方法。 反射半导体光放大器包括：光信号放大区域，其操作以允许从外部入射的向下的光信号获得增益; 以及连接到光信号放大区域并产生调制光信号的光信号调制区域。 向下的光信号通过使用调制光信号的交叉增益调制进行放大，并作为向上的光信号输出。

公开(公告)号：US08030188B2

公开(公告)日：2011-10-04

申请号：US12508382

申请日：2009-07-23

Applicant: Mi-Ran Park ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bongki Mheen ,  Dae Kon Oh

Inventor： Mi-Ran Park ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bongki Mheen ,  Dae Kon Oh

IPC: H01L21/20 ,  H01L21/36

CPC classification number: H01L21/2258

Abstract: Provided is a method of forming a compound semiconductor device. In the method, a dopant element layer is formed on an undoped compound semiconductor layer. An annealing process is performed to diffuse dopants in the dopant element layer into the undoped compound semiconductor layer, thereby forming a dopant diffusion region. A rapid cooling process is performed using liquid nitrogen with respect to the substrate having the dopant diffusion region.

Abstract translation: 提供一种形成化合物半导体器件的方法。 在该方法中，在未掺杂的化合物半导体层上形成掺杂剂元素层。 执行退火处理以将掺杂剂元素层中的掺杂剂扩散到未掺杂的化合物半导体层中，从而形成掺杂剂扩散区域。 相对于具有掺杂剂扩散区域的基板，使用液氮进行快速冷却处理。

公开(公告)号：US20100260223A1

公开(公告)日：2010-10-14

申请号：US11633201

申请日：2006-12-04

Applicant: Jin Soo Kim ,  Jin Hong Lee ,  Sung Ui Hong ,  Ho Sang Kwack ,  Byung Seok Choi ,  Dae Kon Oh

Inventor： Jin Soo Kim ,  Jin Hong Lee ,  Sung Ui Hong ,  Ho Sang Kwack ,  Byung Seok Choi ,  Dae Kon Oh

IPC: H01S5/343 ,  H01L33/02

CPC classification number: H01S5/341 ,  B82Y20/00 ,  H01S5/3403 ,  H01S5/3412 ,  H01S5/34306 ,  H01S2304/00

Abstract: A quantum dot laser diode and a method of fabricating the same are provided. The quantum dot laser diode includes: a first clad layer formed on an InP substrate; a first lattice-matched layer formed on the first clad layer; an active layer formed on the first lattice-matched layer, and including at least one quantum dot layer formed of an InAlAs quantum dot or an InGaPAs quantum dot which is grown by an alternate growth method; a second lattice-matched layer formed on the active layer; a second clad layer formed on the second lattice-matched layer, and an ohmic contact layer formed on the second clad layer.

Abstract translation: 提供了一种量子点激光二极管及其制造方法。 量子点激光二极管包括：形成在InP衬底上的第一覆层; 形成在第一覆盖层上的第一晶格匹配层; 形成在第一晶格匹配层上的活性层，并且包括由交替生长法生长的InAlAs量子点或InGaPAs量子点形成的至少一个量子点层; 形成在所述有源层上的第二晶格匹配层; 形成在第二晶格匹配层上的第二覆盖层和形成在第二覆盖层上的欧姆接触层。