公开(公告)号：US08428091B2

公开(公告)日：2013-04-23

申请号：US12973481

申请日：2010-12-20

Applicant: Mi-Ran Park ,  O-Kyun Kwon ,  Byung-seok Choi ,  Dae Kon Oh

Inventor： Mi-Ran Park ,  O-Kyun Kwon ,  Byung-seok Choi ,  Dae Kon Oh

IPC: H01S3/10 ,  H01S3/04 ,  H01S5/00

CPC classification number: H01S5/423 ,  H01S5/0085 ,  H01S5/02415 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/4012 ,  H01S5/4087 ,  H01S5/50

Abstract: Provided is a tunable laser module emitting an optical signal having high speed, high power and wideband wavelength tuning. The tunable laser module includes a laser array configured to emit an optical signal having a plurality of different lasing wavelengths, a temperature controller configured to change a temperature of the laser array, and an optical integration device configured to modulate or amplify the optical signal at a side of the laser array opposing the temperature controller.

Abstract translation: 提供了一种发射具有高速度，高功率和宽带波长调谐的光信号的可调谐激光模块。 可调谐激光器模块包括配置成发射具有多个不同的激光波长的光信号的激光器阵列，配置成改变激光器阵列的温度的温度控制器，以及配置成在一个或多个激光器阵列处调制或放大光信号的光学积分装置 激光器阵列的一侧与温度控制器相对。

公开(公告)号：US08804232B2

公开(公告)日：2014-08-12

申请号：US13307067

申请日：2011-11-30

Applicant: Dong Churl Kim ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

Inventor： Dong Churl Kim ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

IPC: H01S5/10

CPC classification number: H01S5/1028 ,  H01S5/0265 ,  H01S5/0425 ,  H01S5/1003 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/2222 ,  H01S2301/16

Abstract: A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type.

Abstract translation: 半导体光学器件包括第一模式转换核心，光放大核心，第二模式转换核心和设置在第一模式转换区域中的光调制核心，光放大区域，第二模式转换区域和光调制 区域，以及至少覆盖光放大芯的侧壁和顶表面的电流阻挡部分。 第一模式转换核心，光放大核心，第二模式转换核心和光调制核心按照命名的顺序沿一个方向布置，并且在对接中彼此连接。 电流阻挡部分包括顺序层叠的第一，第二和第三包层图案。 第二包层图案掺杂有第一导电类型的掺杂剂，并且第一和第三包层图案掺杂有第二导电类型的掺杂剂。

公开(公告)号：US20120281274A1

公开(公告)日：2012-11-08

申请号：US13307067

申请日：2011-11-30

Applicant: Dong Churl KIM ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

Inventor： Dong Churl KIM ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

IPC: H01S5/20 ,  H01L21/04

CPC classification number: H01S5/1028 ,  H01S5/0265 ,  H01S5/0425 ,  H01S5/1003 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/2222 ,  H01S2301/16

Abstract: A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type.

Abstract translation: 半导体光学器件包括第一模式转换核心，光放大核心，第二模式转换核心和设置在第一模式转换区域中的光调制核心，光放大区域，第二模式转换区域和光调制 区域，以及至少覆盖光放大芯的侧壁和顶表面的电流阻挡部分。 第一模式转换核心，光放大核心，第二模式转换核心和光调制核心按照命名的顺序沿一个方向布置，并且在对接中彼此连接。 电流阻挡部分包括顺序层叠的第一，第二和第三包层图案。 第二包层图案掺杂有第一导电类型的掺杂剂，并且第一和第三包层图案掺杂有第二导电类型的掺杂剂。

公开(公告)号：US20110134513A1

公开(公告)日：2011-06-09

申请号：US12773196

申请日：2010-05-04

Applicant: Dong Churl Kim ,  Byung-seok Choi ,  Hyun Soo Kim ,  Kisoo Kim ,  O-Kyun Kwon ,  Dae Kon Oh

Inventor： Dong Churl Kim ,  Byung-seok Choi ,  Hyun Soo Kim ,  Kisoo Kim ,  O-Kyun Kwon ,  Dae Kon Oh

IPC: H01S5/026 ,  G02B6/26 ,  G02B6/42

CPC classification number: H01S5/0265 ,  G02B6/1228 ,  G02B6/125 ,  G02B6/2813 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/50

Abstract: Provided is an optical device module that can improve miniaturization and integration. The optical device module includes a semiconductor optical amplifier having a buried structure and including a first active layer buried in a clad layer disposed on a first substrate, an optical modulator in which a sidewall of a second active layer disposed in a direction of the first active layer on a second substrate junctioned to the first substrate is exposed, the optical modulator having a ridge structure, and at least one multi-mode interference coupler in which the second active layer junctioned to the first active layer is buried in the clad layer, the multi-mode interference coupler sharing the second active layer on the second substrate between the optical modulator and the semiconductor optical amplifier and integrated with the second optical device.

Abstract translation: 提供了可以改善小型化和集成的光学装置模块。 光学器件模块包括具有掩埋结构的半导体光学放大器，并且包括掩埋在第一衬底上的覆盖层中的第一有源层，光调制器，其中第二有源层的侧壁沿着第一有源层 暴露在与第一衬底相交的第二衬底上的层，光学调制器具有脊结构，以及至少一个多模干涉耦合器，其中与第一有源层结合的第二有源层被掩埋在覆盖层中， 所述多模干涉耦合器在所述光调制器和所述半导体光放大器之间的所述第二基板上共享所述第二有源层并与所述第二光学装置集成。

公开(公告)号：US20120134014A1

公开(公告)日：2012-05-31

申请号：US13281463

申请日：2011-10-26

Applicant: Jong Sool Jeong ,  Byung-seok Choi ,  O-Kyun Kwon

Inventor： Jong Sool Jeong ,  Byung-seok Choi ,  O-Kyun Kwon

IPC: H01S5/20

CPC classification number: H01S5/141 ,  H01S3/07 ,  H01S3/08027 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/4062 ,  H01S2301/16

Abstract: Disclosed is a light generating device which comprises a first reflective semiconductor optical amplifier emitting a first light along a first direction, a second reflective semiconductor optical amplifier emitting the second light in a direction opposite to the first direction, an optical distributer reflecting a part of an incident light and to pass the remaining of the incident light, and an optical comb filter passing a wavelength component of a specific period.

Abstract translation: 公开了一种发光装置，其包括沿着第一方向发射第一光的第一反射半导体光学放大器，沿与第一方向相反的方向发射第二光的第二反射半导体光学放大器，反射部分的光分配器 入射光并使剩余的入射光通过，并且通过具有特定周期的波长分量的光梳状滤波器。

公开(公告)号：US08989229B2

公开(公告)日：2015-03-24

申请号：US13486698

申请日：2012-06-01

Applicant: Su Hwan Oh ,  Ki-Hong Yoon ,  Kisoo Kim ,  O-Kyun Kwon ,  Oh Kee Kwon ,  Byung-seok Choi ,  Jongbae Kim

Inventor： Su Hwan Oh ,  Ki-Hong Yoon ,  Kisoo Kim ,  O-Kyun Kwon ,  Oh Kee Kwon ,  Byung-seok Choi ,  Jongbae Kim

IPC: H01S5/22 ,  H01S5/026 ,  H01S5/14 ,  H01L33/20 ,  H01S5/022 ,  H01S5/062 ,  H01S5/10 ,  H01S5/223 ,  H01S5/343 ,  H01L33/00 ,  G02B6/30 ,  G02B6/42

CPC classification number: H01L33/005 ,  B82Y20/00 ,  G02B6/305 ,  G02B6/4206 ,  H01L33/0045 ,  H01L33/20 ,  H01L2933/0016 ,  H01L2933/0058 ,  H01S5/02216 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/06226 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/141 ,  H01S5/2213 ,  H01S5/2224 ,  H01S5/2231 ,  H01S5/34306 ,  H01S2301/176

Abstract: Provided are a high-speed superluminescent diode, a method of manufacturing the same, and a wavelength-tunable external cavity laser including the same. The superluminescent diode includes a substrate having an active region and an optical mode size conversion region, waveguides including an ridge waveguide in the active region and a deep ridge waveguide in the optical mode size conversion region connected to the active waveguide, an electrode disposed on the ridge waveguide; planarizing layers disposed on sides of the ridge waveguide and the deep ridge waveguide on the substrate, and a pad electrically connected to the electrode, the pad being disposed on the planarizing layers outside the active waveguide.

Abstract translation: 提供了一种高速超发光二极管，其制造方法，以及包括该发光二极管的波长可调谐外腔激光器。 超发光二极管包括具有有源区和光模尺寸转换区的衬底，在有源区中包括脊波导的波导和连接到有源波导的光模尺寸转换区中的深脊波导， 脊波导; 设置在脊波导的侧面上的平坦化层和基板上的深脊波导，以及与该电极电连接的焊盘，该焊盘设置在有源波导的外侧的平坦化层上。

公开(公告)号：US08548015B2

公开(公告)日：2013-10-01

申请号：US12978957

申请日：2010-12-27

Applicant: Byung-seok Choi

Inventor： Byung-seok Choi

IPC: H01S3/10

CPC classification number: H01S5/02284 ,  G02B6/421 ,  H01S5/02216 ,  H01S5/02446 ,  H01S5/0427 ,  H01S5/0612 ,  H01S5/06226 ,  H01S5/101 ,  H01S5/1085 ,  H01S5/147 ,  H01S5/2275

Abstract: Provided is a wavelength-tunable external cavity laser module. The wavelength-tunable external cavity laser module includes: a gain medium generating light; an optical waveguide combined with the gain medium and including a Bragg grating and a thin film heater adjusting a temperature of the Bragg grating; and a high frequency transmission medium delivering a high frequency signal to the gain medium, wherein the high frequency transmission medium controls an operating speed of the light.

Abstract translation: 提供了一种波长可调谐的外腔激光模块。 波长可调外腔激光器模块包括：增益介质产生光; 与增益介质结合并包括布拉格光栅和调节布拉格光栅温度的薄膜加热器的光波导; 以及向所述增益介质输送高频信号的高频传输介质，其中所述高频传输介质控制所述光的操作速度。