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公开(公告)号：US20120104531A1
公开(公告)日：2012-05-03
申请号：US13191758
申请日：2011-07-27
Applicant: Mi-Ran PARK , O-Kyun Kwon
Inventor： Mi-Ran PARK , O-Kyun Kwon
IPC: H01L31/0216 , H01L31/18
CPC classification number: H01L31/107 , H01L31/02027 , H01L31/02161 , H01L31/184 , Y02E10/544
Abstract: Provided are an avalanche photodiode and a method of fabricating the same. The method of fabricating the avalanche photodiode includes sequentially forming a compound semiconductor absorption layer, a compound semiconductor grading layer, a charge sheet layer, a compound semiconductor amplification layer, a selective wet etch layer, and a p-type conductive layer on an n-type substrate through a metal organic chemical vapor deposition process.
Abstract translation: 提供了一种雪崩光电二极管及其制造方法。 制造雪崩光电二极管的方法包括：在n型衬底上依次形成化合物半导体吸收层，化合物半导体分级层，电荷层，化合物半导体放大层，选择性湿蚀刻层和p型导电层。 通过金属有机化学气相沉积工艺形成衬底。
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2.发明申请公开(公告)号：US20130163916A1
公开(公告)日：2013-06-27
申请号：US13487807
申请日：2012-06-04
Applicant: Hyun Soo KIM , Jong Sool Jeong , Mi-Ran Park , Byungseok Choi , O-Kyun Kwon
Inventor： Hyun Soo KIM , Jong Sool Jeong , Mi-Ran Park , Byungseok Choi , O-Kyun Kwon
CPC classification number: G02B6/43 , G02B6/12004 , G02B6/1228 , G02B6/4224 , G02B6/4232
Abstract: Disclosed are an optical waveguide platform with integrated active transmission device and monitoring photodiode. The optical waveguide platform with hybrid integrated optical transmission device and optical active device includes an optical waveguide region formed by stacking a lower cladding layer, a core layer and an upper cladding layer on a substrate; a trench region formed by etching a portion of the optical waveguide region; and a spot expanding region formed on the core layer in the optical waveguide region, in which the optical transmission device is mounted in the trench region and the optical active device is flip-chip bonded to the spot expanding region. The monitoring photodiode is flip-chip bonded to the spot expanding region of the core layer of the optical waveguide, thereby monitoring output light including an optical coupling loss that occurs during flip-chip bonding.
Abstract translation: 公开了一种具有集成主动传输装置和监测光电二极管的光波导平台。 具有混合集成光传输装置和光学有源装置的光波导平台包括通过在基板上层叠下包层，芯层和上包层而形成的光波导区域; 通过蚀刻光波导区域的一部分形成的沟槽区域; 以及形成在光波导区域的芯层上的点扩展区域，其中光传输装置安装在沟槽区域中，并且光学有源器件被倒装芯片接合到点扩展区域。 监视光电二极管被倒装芯片接合到光波导的芯层的点扩展区域，从而监视包括在倒装芯片接合期间发生的光耦合损耗的输出光。
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3.发明申请SEMICONDUCTOR OPTO-ELECTRONIC INTEGRATED CIRCUITS AND METHODS OF FORMING THE SAME 审中-公开半导体光电集成电路及其形成方法公开(公告)号：US20090154868A1
公开(公告)日：2009-06-18
申请号：US12117707
申请日：2008-05-08
Applicant: Mi-Ran PARK , O-Kyun Kwon , Jeong-Woo Park , Gyung-Ock Kim
Inventor： Mi-Ran PARK , O-Kyun Kwon , Jeong-Woo Park , Gyung-Ock Kim
IPC: G02F1/295
CPC classification number: G02F1/01708 , B82Y20/00 , G02F1/025 , G02F2001/0152 , G02F2201/302 , G02F2201/34 , G02F2203/02
Abstract: Provided are semiconductor opto-electronic integrated circuits and methods of forming the same. The semiconductor opto-electronic integrated circuit includes: an optical waveguide disposed on a substrate and including an input terminal and an output terminal; an optical grating formed on the optical waveguide; and an optical active device disposed on the optical grating and receiving an optical signal from the optical waveguide through the optical grating to modulate the optical signal.
Abstract translation: 提供半导体光电集成电路及其形成方法。 半导体光电集成电路包括：设置在基板上并包括输入端子和输出端子的光波导; 形成在光波导上的光栅; 以及设置在光栅上的光学有源器件，并通过光栅从光波导接收光信号，以调制光信号。
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公开(公告)号：US09229183B2
公开(公告)日：2016-01-05
申请号：US14012384
申请日：2013-08-28
Applicant: Mi-Ran Park , Jong Sool Jeong , Hyun Soo Kim , Byungseok Choi , Young Tak Han , O-Kyun Kwon
Inventor： Mi-Ran Park , Jong Sool Jeong , Hyun Soo Kim , Byungseok Choi , Young Tak Han , O-Kyun Kwon
CPC classification number: G02B6/4274 , G02B6/4249 , G02B6/4263 , G02B6/4279
Abstract: Disclosed is a multi-channel receiver optical sub assembly. The a multi-channel receiver optical sub assembly includes: a multi-channel PD array, in which a plurality of photodiodes (PDs) disposed on a first capacitor, and including receiving areas disposed at centers thereof and anode electrode pads arranged in an opposite direction at an angle of 180 degrees based on the receiving areas between the adjacent PDs is monolithically integrated; a plurality of transimpedance amplifiers (TIAs) arranged on a plurality of second capacitors, respectively, and connected with the anode pads of the respective PDs through wire bonding; a submount on which the first capacitor.
Abstract translation: 公开了一种多通道接收机光学子组件。 多通道接收机光学子组件包括：多通道PD阵列，其中设置在第一电容器上的多个光电二极管（PD），并且包括设置在其中心处的接收区域和布置在相反方向的阳极电极焊盘 基于相邻PD之间的接收区域以180度的角度被整体地集成; 分别布置在多个第二电容器上并通过引线接合与相应PD的阳极焊盘连接的多个跨阻抗放大器（TIA）; 第一电容器的基座。
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5.发明授权公开(公告)号：US08710546B2
公开(公告)日：2014-04-29
申请号：US13191758
申请日：2011-07-27
Applicant: Mi-Ran Park , O-Kyun Kwon
Inventor： Mi-Ran Park , O-Kyun Kwon
IPC: H01L31/107 , H01L31/02
CPC classification number: H01L31/107 , H01L31/02027 , H01L31/02161 , H01L31/184 , Y02E10/544
Abstract: Provided are an avalanche photodiode and a method of fabricating the same. The method of fabricating the avalanche photodiode includes sequentially forming a compound semiconductor absorption layer, a compound semiconductor grading layer, a charge sheet layer, a compound semiconductor amplification layer, a selective wet etch layer, and a p-type conductive layer on an n-type substrate through a metal organic chemical vapor deposition process.
Abstract translation: 提供了一种雪崩光电二极管及其制造方法。 制造雪崩光电二极管的方法包括：在n型衬底上依次形成化合物半导体吸收层，化合物半导体分级层，电荷层，化合物半导体放大层，选择性湿蚀刻层和p型导电层。 通过金属有机化学气相沉积工艺形成衬底。
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Patent Agency Ranking
6.发明授权公开(公告)号：US09042686B2
公开(公告)日：2015-05-26
申请号：US13487807
申请日：2012-06-04
Applicant: Hyun Soo Kim , Jong Sool Jeong , Mi-Ran Park , Byungseok Choi , O-Kyun Kwon
Inventor： Hyun Soo Kim , Jong Sool Jeong , Mi-Ran Park , Byungseok Choi , O-Kyun Kwon
CPC classification number: G02B6/43 , G02B6/12004 , G02B6/1228 , G02B6/4224 , G02B6/4232
Abstract: Disclosed are an optical waveguide platform with integrated active transmission device and monitoring photodiode. The optical waveguide platform with hybrid integrated optical transmission device and optical active device includes an optical waveguide region formed by stacking a lower cladding layer, a core layer and an upper cladding layer on a substrate; a trench region formed by etching a portion of the optical waveguide region; and a spot expanding region formed on the core layer in the optical waveguide region, in which the optical transmission device is mounted in the trench region and the optical active device is flip-chip bonded to the spot expanding region. The monitoring photodiode is flip-chip bonded to the spot expanding region of the core layer of the optical waveguide, thereby monitoring output light including an optical coupling loss that occurs during flip-chip bonding.
Abstract translation: 公开了一种具有集成主动传输装置和监测光电二极管的光波导平台。 具有混合集成光传输装置和光学有源装置的光波导平台包括通过在基板上层叠下包层，芯层和上包层而形成的光波导区域; 通过蚀刻光波导区域的一部分形成的沟槽区域; 以及形成在光波导区域的芯层上的点扩展区域，其中光传输装置安装在沟槽区域中，并且光学有源器件被倒装芯片接合到点扩展区域。 监视光电二极管被倒装芯片接合到光波导的芯层的点扩展区域，从而监视包括在倒装芯片接合期间发生的光耦合损耗的输出光。
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公开(公告)号：US08428091B2
公开(公告)日：2013-04-23
申请号：US12973481
申请日：2010-12-20
Applicant: Mi-Ran Park , O-Kyun Kwon , Byung-seok Choi , Dae Kon Oh
Inventor： Mi-Ran Park , O-Kyun Kwon , Byung-seok Choi , Dae Kon Oh
CPC classification number: H01S5/423 , H01S5/0085 , H01S5/02415 , H01S5/18341 , H01S5/18358 , H01S5/4012 , H01S5/4087 , H01S5/50
Abstract: Provided is a tunable laser module emitting an optical signal having high speed, high power and wideband wavelength tuning. The tunable laser module includes a laser array configured to emit an optical signal having a plurality of different lasing wavelengths, a temperature controller configured to change a temperature of the laser array, and an optical integration device configured to modulate or amplify the optical signal at a side of the laser array opposing the temperature controller.
Abstract translation: 提供了一种发射具有高速度，高功率和宽带波长调谐的光信号的可调谐激光模块。 可调谐激光器模块包括配置成发射具有多个不同的激光波长的光信号的激光器阵列，配置成改变激光器阵列的温度的温度控制器，以及配置成在一个或多个激光器阵列处调制或放大光信号的光学积分装置 激光器阵列的一侧与温度控制器相对。
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8.发明授权Long wavelength vertical cavity surface emitting laser device and method of fabricating the same 有权长波长垂直腔表面发射激光器件及其制造方法公开(公告)号：US07680162B2
公开(公告)日：2010-03-16
申请号：US11951133
申请日：2007-12-05
Applicant: Mi-Ran Park , O-Kyun Kwon
Inventor： Mi-Ran Park , O-Kyun Kwon
IPC: H01S3/04
CPC classification number: H01S5/18308 , B82Y20/00 , H01S5/024 , H01S5/02461 , H01S5/18311 , H01S5/18313 , H01S5/18333 , H01S5/3095 , H01S5/34306 , H01S2301/18
Abstract: Provided is a vertical cavity surface emitting device. The surface emitting device includes a lower mirror layer emitting light having a long wavelength, an active layer providing an optical gain, a tunnel junction layer for confining a current, and an upper mirror layer, which are sequentially stacked on a compound semiconductor substrate, wherein a heat release layer is formed on side surfaces of at least one of the active layer, the tunnel junction layer and the upper mirror layer by using etching process, and the heat release layer has greater thermal conductivity than at least one of the active layer, the tunnel junction layer and the upper mirror layer.
Abstract translation: 提供了一种垂直腔表面发射装置。 表面发射器件包括顺序地堆叠在化合物半导体衬底上的具有长波长的光的下反射镜层，提供光学增益的有源层，用于限制电流的隧道结层和上镜面层，其中 通过使用蚀刻工艺在活性层，隧道结层和上镜面层中的至少一个的侧表面上形成放热层，并且散热层的热导率比活性层， 隧道结层和上镜面层。
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9.发明申请LONG WAVELENGTH VERTICAL CAVITY SURFACE EMITTING LASER DEVICE AND METHOD OF FABRICATING THE SAME 有权长波长垂直孔表面发射激光器件及其制造方法公开(公告)号：US20080137692A1
公开(公告)日：2008-06-12
申请号：US11951133
申请日：2007-12-05
Applicant: Mi-Ran Park , O-Kyun Kwon
Inventor： Mi-Ran Park , O-Kyun Kwon
IPC: H01S5/00
CPC classification number: H01S5/18308 , B82Y20/00 , H01S5/024 , H01S5/02461 , H01S5/18311 , H01S5/18313 , H01S5/18333 , H01S5/3095 , H01S5/34306 , H01S2301/18
Abstract: Provided is a vertical cavity surface emitting device. The surface emitting device includes a lower mirror layer emitting light having a long wavelength, an active layer providing an optical gain, a tunnel junction layer for confining a current, and an upper mirror layer, which are sequentially stacked on a compound semiconductor substrate, wherein a heat release layer is formed on side surfaces of at least one of the active layer, the tunnel junction layer and the upper mirror layer by using etching process, and the heat release layer has greater thermal conductivity than at least one of the active layer, the tunnel junction layer and the upper mirror layer.
Abstract translation: 提供了一种垂直腔表面发射装置。 表面发射器件包括顺序地堆叠在化合物半导体衬底上的具有长波长的光的下反射镜层，提供光学增益的有源层，用于限制电流的隧道结层和上镜面层，其中 通过使用蚀刻工艺在活性层，隧道结层和上镜面层中的至少一个的侧表面上形成放热层，并且散热层的热导率比活性层， 隧道结层和上镜面层。
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公开(公告)号：US20100316383A1
公开(公告)日：2010-12-16
申请号：US12582211
申请日：2009-10-20
Applicant: Hyun Soo KIM , Kisoo Kim , Dong Churl Kim , Byung-Seok Choi , O-Kyun Kwon , Dae Kon Oh
Inventor： Hyun Soo KIM , Kisoo Kim , Dong Churl Kim , Byung-Seok Choi , O-Kyun Kwon , Dae Kon Oh
IPC: H04J14/02
CPC classification number: H04J14/0282
Abstract: Provided is a wavelength division multiplexed-passive optical network (WDM-PON) apparatus. The WDM-PON includes an optical source unit, an optical mux, and a chirped Bragg grating. The optical source unit generates an optical signal. The optical mux receives the optical signal from the optical source unit through one end of the optical mux, multiplexes the optical signal, and outputs the multiplexed optical signal. The chirped Bragg grating is connected to the other end of the optical mux. The chirped Bragg grating again reflects the optical signal having passed the optical mux to re-input a certain portion of the optical signal into the optical mux and the optical source unit. The optical mux performs a spectrum slicing on the re-inputted optical signal and operates the optical source unit using a channel wavelength of the optical mux as a main oscillation wavelength.
Abstract translation: 提供了一种波分复用无源光网络（WDM-PON）装置。 WDM-PON包括光源单元，光复用器和啁啾布拉格光栅。 光源单元产生光信号。 光复用器通过光复用器的一端从光源单元接收光信号，复用光信号，并输出复用的光信号。 啁啾布拉格光栅连接到光复用器的另一端。 啁啾布拉格光栅再次反射已经通过光复用器的光信号，以将光信号的某一部分重新输入光复用器和光源单元。 光复用器对重新输入的光信号执行频谱分片，并使用光复用器的信道波长作为主振荡波长来操作光源单元。
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