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    Tunable laser module
    1.
    发明授权
    Tunable laser module 有权
    可调激光模块

    公开(公告)号：US08428091B2

    公开(公告)日：2013-04-23

    申请号：US12973481

    申请日：2010-12-20

    Applicant: Mi-Ran Park ,  O-Kyun Kwon ,  Byung-seok Choi ,  Dae Kon Oh

    Inventor： Mi-Ran Park ,  O-Kyun Kwon ,  Byung-seok Choi ,  Dae Kon Oh

    IPC: H01S3/10 ,  H01S3/04 ,  H01S5/00

    CPC classification number: H01S5/423 ,  H01S5/0085 ,  H01S5/02415 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/4012 ,  H01S5/4087 ,  H01S5/50

    Abstract: Provided is a tunable laser module emitting an optical signal having high speed, high power and wideband wavelength tuning. The tunable laser module includes a laser array configured to emit an optical signal having a plurality of different lasing wavelengths, a temperature controller configured to change a temperature of the laser array, and an optical integration device configured to modulate or amplify the optical signal at a side of the laser array opposing the temperature controller.

    Abstract translation: 提供了一种发射具有高速度，高功率和宽带波长调谐的光信号的可调谐激光模块。 可调谐激光器模块包括配置成发射具有多个不同的激光波长的光信号的激光器阵列，配置成改变激光器阵列的温度的温度控制器，以及配置成在一个或多个激光器阵列处调制或放大光信号的光学积分装置 激光器阵列的一侧与温度控制器相对。

    WAVELENGTH DIVISION MULTIPLEXED-PASSIVE OPTICAL NETWORK APPARATUS
    2.
    发明申请
    WAVELENGTH DIVISION MULTIPLEXED-PASSIVE OPTICAL NETWORK APPARATUS 审中-公开
    波长部分多路无源光网络设备

    公开(公告)号：US20100316383A1

    公开(公告)日：2010-12-16

    申请号：US12582211

    申请日：2009-10-20

    Applicant: Hyun Soo KIM ,  Kisoo Kim ,  Dong Churl Kim ,  Byung-Seok Choi ,  O-Kyun Kwon ,  Dae Kon Oh

    Inventor： Hyun Soo KIM ,  Kisoo Kim ,  Dong Churl Kim ,  Byung-Seok Choi ,  O-Kyun Kwon ,  Dae Kon Oh

    IPC: H04J14/02

    CPC classification number: H04J14/0282

    Abstract: Provided is a wavelength division multiplexed-passive optical network (WDM-PON) apparatus. The WDM-PON includes an optical source unit, an optical mux, and a chirped Bragg grating. The optical source unit generates an optical signal. The optical mux receives the optical signal from the optical source unit through one end of the optical mux, multiplexes the optical signal, and outputs the multiplexed optical signal. The chirped Bragg grating is connected to the other end of the optical mux. The chirped Bragg grating again reflects the optical signal having passed the optical mux to re-input a certain portion of the optical signal into the optical mux and the optical source unit. The optical mux performs a spectrum slicing on the re-inputted optical signal and operates the optical source unit using a channel wavelength of the optical mux as a main oscillation wavelength.

    Abstract translation: 提供了一种波分复用无源光网络（WDM-PON）装置。 WDM-PON包括光源单元，光复用器和啁啾布拉格光栅。 光源单元产生光信号。 光复用器通过光复用器的一端从光源单元接收光信号，复用光信号，并输出复用的光信号。 啁啾布拉格光栅连接到光复用器的另一端。 啁啾布拉格光栅再次反射已经通过光复用器的光信号，以将光信号的某一部分重新输入光复用器和光源单元。 光复用器对重新输入的光信号执行频谱分片，并使用光复用器的信道波长作为主振荡波长来操作光源单元。

    Semiconductor optical devices and methods of fabricating the same
    3.
    发明授权
    Semiconductor optical devices and methods of fabricating the same 有权
    半导体光学器件及其制造方法

    公开(公告)号：US08804232B2

    公开(公告)日：2014-08-12

    申请号：US13307067

    申请日：2011-11-30

    Applicant: Dong Churl Kim ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

    Inventor： Dong Churl Kim ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

    IPC: H01S5/10

    CPC classification number: H01S5/1028 ,  H01S5/0265 ,  H01S5/0425 ,  H01S5/1003 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/2222 ,  H01S2301/16

    Abstract: A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type.

    Abstract translation: 半导体光学器件包括第一模式转换核心，光放大核心，第二模式转换核心和设置在第一模式转换区域中的光调制核心，光放大区域，第二模式转换区域和光调制 区域，以及至少覆盖光放大芯的侧壁和顶表面的电流阻挡部分。 第一模式转换核心，光放大核心，第二模式转换核心和光调制核心按照命名的顺序沿一个方向布置，并且在对接中彼此连接。 电流阻挡部分包括顺序层叠的第一，第二和第三包层图案。 第二包层图案掺杂有第一导电类型的掺杂剂，并且第一和第三包层图案掺杂有第二导电类型的掺杂剂。

    Optical amplifier
    5.
    发明授权
    Optical amplifier 有权
    光放大器

    公开(公告)号：US08594469B2

    公开(公告)日：2013-11-26

    申请号：US12640627

    申请日：2009-12-17

    Applicant: Byung-Seok Choi ,  Dae Kon Oh ,  O-Kyun Kwon ,  Dong Churl Kim ,  Kisoo Kim ,  Hyun Soo Kim

    Inventor： Byung-Seok Choi ,  Dae Kon Oh ,  O-Kyun Kwon ,  Dong Churl Kim ,  Kisoo Kim ,  Hyun Soo Kim

    IPC: G02F1/035

    CPC classification number: H01S5/50 ,  G02F1/2955 ,  G02F2001/0155 ,  G02F2001/0156 ,  G02F2202/06 ,  G02F2202/101 ,  G02F2202/102 ,  G02F2203/02 ,  G02F2203/15 ,  G02F2203/20 ,  G02F2203/70

    Abstract: An optical amplifier includes a passive waveguide region and an active waveguide region. The passive waveguide region is configured to receive an incident optical signal and adjust a mode of the optical signal. The active waveguide region is integrated to the passive waveguide region and configured to perform gain modulation on the optical signal received from the passive waveguide region by changing density of carriers in response to a current applied to the active waveguide region. Internal loss of the active waveguide region is adjusted to produce a resonance effect and thereby to increase bandwidth of the active waveguide. Therefore, the optical amplifier can have a wide bandwidth under a low-current condition.

    Abstract translation: 光放大器包括无源波导区域和有源波导区域。 无源波导区域被配置为接收入射光信号并调整光信号的模式。 有源波导区域被集成到无源波导区域，并被配置为响应于施加到有源波导区域的电流改变载波的密度，对从无源波导区域接收的光信号执行增益调制。 有源波导区域的内部损耗被调节以产生共振效应，从而增加有源波导的带宽。 因此，光放大器可以在低电流条件下具有宽带宽。

    OPTICAL DEVICE MODULE
    6.
    发明申请
    OPTICAL DEVICE MODULE 审中-公开
    光学器件模块

    公开(公告)号：US20110134513A1

    公开(公告)日：2011-06-09

    申请号：US12773196

    申请日：2010-05-04

    Applicant: Dong Churl Kim ,  Byung-seok Choi ,  Hyun Soo Kim ,  Kisoo Kim ,  O-Kyun Kwon ,  Dae Kon Oh

    Inventor： Dong Churl Kim ,  Byung-seok Choi ,  Hyun Soo Kim ,  Kisoo Kim ,  O-Kyun Kwon ,  Dae Kon Oh

    IPC: H01S5/026 ,  G02B6/26 ,  G02B6/42

    CPC classification number: H01S5/0265 ,  G02B6/1228 ,  G02B6/125 ,  G02B6/2813 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/50

    Abstract: Provided is an optical device module that can improve miniaturization and integration. The optical device module includes a semiconductor optical amplifier having a buried structure and including a first active layer buried in a clad layer disposed on a first substrate, an optical modulator in which a sidewall of a second active layer disposed in a direction of the first active layer on a second substrate junctioned to the first substrate is exposed, the optical modulator having a ridge structure, and at least one multi-mode interference coupler in which the second active layer junctioned to the first active layer is buried in the clad layer, the multi-mode interference coupler sharing the second active layer on the second substrate between the optical modulator and the semiconductor optical amplifier and integrated with the second optical device.

    Abstract translation: 提供了可以改善小型化和集成的光学装置模块。 光学器件模块包括具有掩埋结构的半导体光学放大器，并且包括掩埋在第一衬底上的覆盖层中的第一有源层，光调制器，其中第二有源层的侧壁沿着第一有源层 暴露在与第一衬底相交的第二衬底上的层，光学调制器具有脊结构，以及至少一个多模干涉耦合器，其中与第一有源层结合的第二有源层被掩埋在覆盖层中， 所述多模干涉耦合器在所述光调制器和所述半导体光放大器之间的所述第二基板上共享所述第二有源层并与所述第二光学装置集成。

    SEMICONDUCTOR OPTICAL DEVICES AND METHODS OF FABRICATING THE SAME
    7.
    发明申请
    SEMICONDUCTOR OPTICAL DEVICES AND METHODS OF FABRICATING THE SAME 有权
    半导体光学器件及其制造方法

    公开(公告)号：US20120281274A1

    公开(公告)日：2012-11-08

    申请号：US13307067

    申请日：2011-11-30

    Applicant: Dong Churl KIM ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

    Inventor： Dong Churl KIM ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

    IPC: H01S5/20 ,  H01L21/04

    CPC classification number: H01S5/1028 ,  H01S5/0265 ,  H01S5/0425 ,  H01S5/1003 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/2222 ,  H01S2301/16

    Abstract: A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type.

    Abstract translation: 半导体光学器件包括第一模式转换核心，光放大核心，第二模式转换核心和设置在第一模式转换区域中的光调制核心，光放大区域，第二模式转换区域和光调制 区域，以及至少覆盖光放大芯的侧壁和顶表面的电流阻挡部分。 第一模式转换核心，光放大核心，第二模式转换核心和光调制核心按照命名的顺序沿一个方向布置，并且在对接中彼此连接。 电流阻挡部分包括顺序层叠的第一，第二和第三包层图案。 第二包层图案掺杂有第一导电类型的掺杂剂，并且第一和第三包层图案掺杂有第二导电类型的掺杂剂。

    AVALANCHE PHOTODIODES AND METHODS OF FABRICATING THE SAME
    9.
    发明申请
    AVALANCHE PHOTODIODES AND METHODS OF FABRICATING THE SAME 有权
    AVALANCHE光电及其制造方法

    公开(公告)号：US20120104531A1

    公开(公告)日：2012-05-03

    申请号：US13191758

    申请日：2011-07-27

    Applicant: Mi-Ran PARK ,  O-Kyun Kwon

    Inventor： Mi-Ran PARK ,  O-Kyun Kwon

    IPC: H01L31/0216 ,  H01L31/18

    CPC classification number: H01L31/107 ,  H01L31/02027 ,  H01L31/02161 ,  H01L31/184 ,  Y02E10/544

    Abstract: Provided are an avalanche photodiode and a method of fabricating the same. The method of fabricating the avalanche photodiode includes sequentially forming a compound semiconductor absorption layer, a compound semiconductor grading layer, a charge sheet layer, a compound semiconductor amplification layer, a selective wet etch layer, and a p-type conductive layer on an n-type substrate through a metal organic chemical vapor deposition process.

    Abstract translation: 提供了一种雪崩光电二极管及其制造方法。 制造雪崩光电二极管的方法包括：在n型衬底上依次形成化合物半导体吸收层，化合物半导体分级层，电荷层，化合物半导体放大层，选择性湿蚀刻层和p型导电层。 通过金属有机化学气相沉积工艺形成衬底。

    OPTICAL WAVEGUIDE PLATFORM WITH HYBRID-INTEGRATED OPTICAL TRANSMISSION DEVICE AND OPTICAL ACTIVE DEVICE AND METHOD OF MANUFACTURING THE SAME
    10.
    发明申请
    OPTICAL WAVEGUIDE PLATFORM WITH HYBRID-INTEGRATED OPTICAL TRANSMISSION DEVICE AND OPTICAL ACTIVE DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    具有混合光学传输装置的光波导平台和光学有源装置及其制造方法

    公开(公告)号：US20130163916A1

    公开(公告)日：2013-06-27

    申请号：US13487807

    申请日：2012-06-04

    Applicant: Hyun Soo KIM ,  Jong Sool Jeong ,  Mi-Ran Park ,  Byungseok Choi ,  O-Kyun Kwon

    Inventor： Hyun Soo KIM ,  Jong Sool Jeong ,  Mi-Ran Park ,  Byungseok Choi ,  O-Kyun Kwon

    IPC: G02B6/12 ,  H01L21/02

    CPC classification number: G02B6/43 ,  G02B6/12004 ,  G02B6/1228 ,  G02B6/4224 ,  G02B6/4232

    Abstract: Disclosed are an optical waveguide platform with integrated active transmission device and monitoring photodiode. The optical waveguide platform with hybrid integrated optical transmission device and optical active device includes an optical waveguide region formed by stacking a lower cladding layer, a core layer and an upper cladding layer on a substrate; a trench region formed by etching a portion of the optical waveguide region; and a spot expanding region formed on the core layer in the optical waveguide region, in which the optical transmission device is mounted in the trench region and the optical active device is flip-chip bonded to the spot expanding region. The monitoring photodiode is flip-chip bonded to the spot expanding region of the core layer of the optical waveguide, thereby monitoring output light including an optical coupling loss that occurs during flip-chip bonding.

    Abstract translation: 公开了一种具有集成主动传输装置和监测光电二极管的光波导平台。 具有混合集成光传输装置和光学有源装置的光波导平台包括通过在基板上层叠下包层，芯层和上包层而形成的光波导区域; 通过蚀刻光波导区域的一部分形成的沟槽区域; 以及形成在光波导区域的芯层上的点扩展区域，其中光传输装置安装在沟槽区域中，并且光学有源器件被倒装芯片接合到点扩展区域。 监视光电二极管被倒装芯片接合到光波导的芯层的点扩展区域，从而监视包括在倒装芯片接合期间发生的光耦合损耗的输出光。

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