Abstract:
According to one embodiment of the present invention, a MOS transistor includes a semiconductor layer including a source region, a drain region, and a channel region disposed between the source region and the drain region. A gate structure is arranged above the channel regions. A source wiring structure is arranged above the source region and is connected to the source region. A drain wiring structure is arranged above the drain region and is connected to the drain region. The width of the source wiring structure is larger than the width of the drain wiring structure, and the height of the source wiring structure is smaller than the height of the drain wiring structure, or vice versa.
Abstract:
One aspect is an integrated circuit arrangement. The arrangement includes a first terminal, which can be brought to a first supply potential, a second terminal, which can be brought to a second supply potential, and a supply potential path formed between the first terminal and the second terminal. There is an electrostatic discharge element at least in the supply potential path. There is a signal input pad, to which an input signal can be applied and a signal output, at an output signal can be provided. A first inductance is arranged between the signal input pad and the signal output, and a second inductance is arranged between the signal output and the first terminal.
Abstract:
An amplifier circuit for an oscillator in a defined oscillating frequency range includes a plurality of transconductors, wherein at least one transconductor has a positive transconductance, and wherein at least one other transconductor has a negative transconductance, wherein the transconductors together provide a positive amplification, and a passive impedance element coupled to at least one fed back transconductor, wherein the transconductance of the transconductor and the impedance element are dimensioned so that, in the oscillating frequency range, a given phase difference is present between a signal at the input and a signal at the output.
Abstract:
An integrated amplifier has a resonant circuit with a tuneable center frequency, in which the resonant circuit has at least one coil and at least one varactor for varying a resonant frequency of the resonant circuit.
Abstract:
The coil and coil system is provided for integration in a microelecronic circuit. The coil is placed inside an oxide layer of a chip, and the oxide layer is placed on the substrate surface of a substrate. The coil comprises one or more windings, whereby the winding(s) is/are formed by at least segments of two conductor tracks, which are each provided in spatially spaced-apart metalization levels, and by via-contacts which connect these conductor track(s) and/or conductor track segments. In order to be able to produce high-quality coils, a coil is produced with the largest possible coil cross-section, whereby a standard metalization, especially a standard metalization using copper, can, however, be used for producing the oil. To this end, the via contacts are formed from a stack of two ore more via elements arranged one above the other. Parts of the metalization levels can be located between the via elements.
Abstract:
A disclosed circuit arrangement may include a power detector. A multiplexer circuit may be coupled to the power detector. The multiplexer circuit may include at least two switching sections, one of the switching sections to pass a radio frequency (RF) signal generated based on a first modulation scheme to the power detector and another of the switching sections to pass an RF signal generated based on a second modulation scheme to the power detector.
Abstract:
Semiconductor device having an amplifier. In one embodiment, the amplifier includes a first amplifier path including a first input and a second amplifier path including a second input. An inductance having a connectable node is connected between the first and second inputs, the connectable node being symmetrically connected between the first and second inputs. At least one ESD protection structure is connected to the connectable node. In one embodiment, the semiconductor device is used in a communications device.
Abstract:
Integrated circuit including a mixer circuit, which has a first circuit section, a second circuit section, and a transformer. The first circuit section has two radiofrequency terminals. The second circuit section has two reference oscillator terminals, an active mixer unit with a signal-amplifying unit, and two intermediate frequency terminals. The active mixer unit and the signal-amplifying unit have a common current path. The transformer directly electrically decouples the two radiofrequency terminals from the active mixer unit, and couples the first circuit section and the second circuit section together such that each of the two circuit sections is separately supplied with a full operating voltage of the integrated circuit. The integrated circuit may additionally include a second transformer connected between the active mixer unit and the two intermediate frequency terminals.