公开(公告)号：US20110057183A1

公开(公告)日：2011-03-10

申请号：US12948198

申请日：2010-11-17

申请人： Takahiro IBE ,  Hisao IKEDA ,  Junichi KOEZUKA ,  Kaoru KATO

发明人： Takahiro IBE ,  Hisao IKEDA ,  Junichi KOEZUKA ,  Kaoru KATO

IPC分类号： H01L51/52

CPC分类号： H01L51/5284 ,  H01L51/5052

摘要： The present invention provides a light-emitting element and a light-emitting device which have high contrast, and specifically, provides a light-emitting device whose contrast is enhanced, not by using a polarizing plate but using a conventional electrode material. Reflection of external light is suppressed by provision of a light-absorbing layer included between a non-light-transmitting electrode and a light-emitting layer. As the light-absorbing layer, a layer is used, which is obtained by adding a halogen atom into a layer including an organic compound and a metal oxide. Further, the light-absorbing layer is formed also over a region in which a thin film transistor for driving a light-emitting element is formed, a region in which a wiring is formed, and the like, and thus light is extracted from the side opposite to the region in which the TFT is formed, thereby reducing reflection of external light.

摘要翻译： 本发明提供一种具有高对比度的发光元件和发光装置，具体地说，提供了不是通过使用偏光板而是使用常规电极材料来提高对比度的发光装置。 通过设置非光发射电极和发光层之间的光吸收层来抑制外部光的反射。 作为光吸收层，使用通过在包含有机化合物和金属氧化物的层中添加卤素原子得到的层。 此外，在形成有用于驱动发光元件的薄膜晶体管，形成布线的区域等的区域上也形成光吸收层，从而从侧面提取光 与形成TFT的区域相反，从而减少外部光的反射。

公开(公告)号：US20100301329A1

公开(公告)日：2010-12-02

申请号：US12787813

申请日：2010-05-26

申请人： Yuji ASANO ,  Junichi KOEZUKA

发明人： Yuji ASANO ,  Junichi KOEZUKA

IPC分类号： H01L29/786 ,  H01L21/36

CPC分类号： H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/465 ,  H01L21/47635 ,  H01L21/477 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a thin film transistor using an oxide semiconductor layer, in which contact resistance between the oxide semiconductor layer and source and drain electrode layers is reduced and electric characteristics are stabilized. Another object is to provide a method for manufacturing the thin film transistor. A thin film transistor using an oxide semiconductor layer is formed in such a manner that buffer layers having higher conductivity than the oxide semiconductor layer are formed over the oxide semiconductor layer, source and drain electrode layers are formed over the buffer layers, and the oxide semiconductor layer is electrically connected to the source and drain electrode layers with the buffer layers interposed therebetween. In addition, the buffer layers are subjected to reverse sputtering treatment and heat treatment in a nitrogen atmosphere, whereby the buffer layers having higher conductivity than the oxide semiconductor layer are obtained.

摘要翻译： 目的是提供一种使用氧化物半导体层的薄膜晶体管，其中氧化物半导体层和源极和漏极电极层之间的接触电阻减小并且电特性稳定。 另一个目的是提供制造薄膜晶体管的方法。 使用氧化物半导体层的薄膜晶体管形成为在氧化物半导体层上形成具有比氧化物半导体层更高的导电性的缓冲层，在缓冲层上形成源极和漏极层，并且氧化物半导体 层与源极和漏极电极层电连接，缓冲层插入其间。 此外，缓冲层在氮气气氛中进行反溅射处理和热处理，由此获得具有比氧化物半导体层更高的导电性的缓冲层。

公开(公告)号：US20100252832A1

公开(公告)日：2010-10-07

申请号：US12748521

申请日：2010-03-29

申请人： Yuji ASANO ,  Junichi KOEZUKA

发明人： Yuji ASANO ,  Junichi KOEZUKA

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/66969 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/477 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a thin film transistor using an oxide semiconductor layer, in which contact resistance between the oxide semiconductor layer and source and drain electrode layers is reduced and electric characteristics are stabilized. The thin film transistor is formed in such a manner that a buffer layer including a high-resistance region and low-resistance regions is formed over an oxide semiconductor layer, and the oxide semiconductor layer and source and drain electrode layers are in contact with each other with the low-resistance region of the buffer layer interposed therebetween.

摘要翻译： 目的是提供一种使用氧化物半导体层的薄膜晶体管，其中氧化物半导体层和源极和漏极电极层之间的接触电阻减小并且电特性稳定。 薄膜晶体管形成为在氧化物半导体层上形成包括高电阻区域和低电阻区域的缓冲层，并且氧化物半导体层和源极和漏极电极层彼此接触 其中缓冲层的低电阻区域插入其间。

公开(公告)号：US20090096054A1

公开(公告)日：2009-04-16

申请号：US12237606

申请日：2008-09-25

申请人： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Tetsuya KAKEHATA

发明人： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Tetsuya KAKEHATA

IPC分类号： H01L29/00 ,  H01L21/762

CPC分类号： H01L21/84 ,  H01L21/76254 ,  H01L29/42384 ,  H01L29/66772 ,  H01L29/78621

摘要： A semiconductor device including a semiconductor substrate is provided. The semiconductor substrate includes a substrate having an insulating surface, and a plurality of stacks over the substrate having an insulating surface. Each of the plurality of stacks includes a bonding layer over the substrate having an insulating surface, an insulating layer over the bonding layer, and a single crystal semiconductor layer over the insulating layer. The substrate having an insulating surface has a depression, and the depression is provided between one of the plurality of stacks and another adjacent one of the plurality of stacks.

摘要翻译： 提供了包括半导体衬底的半导体器件。 半导体衬底包括具有绝缘表面的衬底和在衬底上的多个堆叠，其具有绝缘表面。 多个堆叠中的每一个在基板上包括具有绝缘表面的接合层，接合层上的绝缘层以及绝缘层上的单晶半导体层。 具有绝缘表面的基板具有凹陷，并且凹陷设置在多个叠层中的一个和多个叠层中的另一个相邻的堆叠之间。

公开(公告)号：US20090001879A1

公开(公告)日：2009-01-01

申请号：US12135265

申请日：2008-06-09

申请人： Hisao IKEDA ,  Takahiro IBE ,  Junichi KOEZUKA ,  Kaoru KATO

发明人： Hisao IKEDA ,  Takahiro IBE ,  Junichi KOEZUKA ,  Kaoru KATO

IPC分类号： H01L51/40 ,  H01J1/63

CPC分类号： H01L51/52 ,  H01L27/3283 ,  H01L51/002 ,  H01L51/5052 ,  H01L51/5088 ,  H01L51/5215 ,  H01L2251/5392 ,  H01L2251/558

摘要： The present invention provides a light-emitting device including a light-emitting element over a substrate, the light-emitting element is partitioned from an adjacent light-emitting element by a partition wall, the light-emitting element comprising a first electrode, a layer formed over the first electrode, a light-emitting layer formed over the layer and a second electrode formed over the light-emitting layer, the layer contains an inorganic compound, an organic compound and a halogen atom, the partition wall contains the inorganic compound and the organic compound, and the layer. The light-emitting device provides higher reliability and fewer defects.

摘要翻译： 本发明提供一种发光装置，其在基板上包括发光元件，所述发光元件通过分隔壁与相邻的发光元件分隔开，所述发光元件包括第一电极，层 形成在第一电极上，形成在该层上的发光层和形成在发光层上的第二电极，该层包含无机化合物，有机化合物和卤素原子，分隔壁包含无机化合物和 有机化合物和层。 发光装置提供更高的可靠性和更少的缺陷。

公开(公告)号：US20130075732A1

公开(公告)日：2013-03-28

申请号：US13604962

申请日：2012-09-06

申请人： Toshihiko SAITO ,  Atsuo ISOBE ,  Kazuya HANAOKA ,  Junichi KOEZUKA ,  Shinya SASAGAWA ,  Motomu KURATA ,  Akihiro ISHIZUKA

发明人： Toshihiko SAITO ,  Atsuo ISOBE ,  Kazuya HANAOKA ,  Junichi KOEZUKA ,  Shinya SASAGAWA ,  Motomu KURATA ,  Akihiro ISHIZUKA

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： A miniaturized transistor having high electric characteristics is provided with high yield. In a semiconductor device including the transistor, high performance, high reliability, and high productivity are achieved. In a semiconductor device including a transistor in which an oxide semiconductor film, a gate insulating film, and a gate electrode layer on side surfaces of which sidewall insulating layers are provided are stacked in this order, source and drain electrode layers are provided in contact with the oxide semiconductor film and the sidewall insulating layers. In a process for manufacturing the semiconductor device, a conductive film and an interlayer insulating film are stacked to cover the oxide semiconductor film, the sidewall insulating layers, and the gate electrode layer, and the interlayer insulating film and the conductive film over the gate electrode layer are removed by a chemical mechanical polishing method, so that the source and drain electrode layers are formed.

摘要翻译： 提供具有高电特性的小型化晶体管，其产率高。 在包括晶体管的半导体器件中，实现了高性能，高可靠性和高生产率。 在包括晶体管的半导体器件中，依次堆叠其中设置有侧壁绝缘层的侧表面上的氧化物半导体膜，栅极绝缘膜和栅极电极层的晶体管，源极和漏极电极层被设置为与 氧化物半导体膜和侧壁绝缘层。 在制造半导体器件的过程中，层叠导电膜和层间绝缘膜以覆盖氧化物半导体膜，侧壁绝缘层和栅极电极层，以及栅极上的层间绝缘膜和导电膜 通过化学机械抛光方法去除层，从而形成源极和漏极电极层。

公开(公告)号：US20130069055A1

公开(公告)日：2013-03-21

申请号：US13608044

申请日：2012-09-10

申请人： Shunpei YAMAZAKI ,  Atsuo ISOBE ,  Hiromachi GODO ,  Takehisa HATANO ,  Sachiaki TEZUKA ,  Suguru HONDO ,  Naoto YAMADE ,  Junichi KOEZUKA

发明人： Shunpei YAMAZAKI ,  Atsuo ISOBE ,  Hiromachi GODO ,  Takehisa HATANO ,  Sachiaki TEZUKA ,  Suguru HONDO ,  Naoto YAMADE ,  Junichi KOEZUKA

IPC分类号： H01L29/78

CPC分类号： H01L29/41733 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693

摘要： Provided is a semiconductor device in which an oxide semiconductor layer is provided; a pair of wiring layers which are provided with the gate electrode layer interposed therebetween are electrically connected to the low-resistance regions; and electrode layers are provided to be in contact with the low-resistance regions, below regions where the wiring layers are formed.

摘要翻译： 提供一种半导体器件，其中提供氧化物半导体层; 设置有栅极电极层的一对布线层电连接到低电阻区域; 并且电极层设置成与低电阻区域接触，在形成布线层的区域之下。

公开(公告)号：US20120244658A1

公开(公告)日：2012-09-27

申请号：US13419468

申请日：2012-03-14

申请人： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO

发明人： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO

IPC分类号： H01L21/425

CPC分类号： H01L21/425 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： A semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability, is provided. In a method for manufacturing a transistor including an oxide semiconductor film, an implantation step where rare gas ions are implanted to the oxide semiconductor film is performed, and the oxide semiconductor film to which rare gas ions are implanted is subjected to a heating step under reduced pressure, in a nitrogen atmosphere, or in a rare gas atmosphere, whereby hydrogen or water contained in the oxide semiconductor film to which rare gas ions are implanted is released; thus, the oxide semiconductor film is highly purified.

摘要翻译： 提供了包括具有稳定的电特性和高可靠性的氧化物半导体的半导体器件。 在制造包括氧化物半导体膜的晶体管的方法中，执行将稀有气体离子注入到氧化物半导体膜中的注入步骤，并且将减少稀有气体离子的氧化物半导体膜在减小的温度下进行加热步骤 压力，在氮气气氛中或在稀有气体气氛中，由此释放在其中植入稀有气体离子的氧化物半导体膜中所含的氢或水; 因此，氧化物半导体膜被高度纯化。

公开(公告)号：US20120235137A1

公开(公告)日：2012-09-20

申请号：US13415080

申请日：2012-03-08

申请人： Junichi KOEZUKA ,  Yuichi SATO ,  Shinji OHNO

发明人： Junichi KOEZUKA ,  Yuichi SATO ,  Shinji OHNO

IPC分类号： H01L29/78 ,  H01L21/44 ,  H01L29/22

CPC分类号： H01L29/78618 ,  G02F1/136204 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/0259 ,  H01L21/265 ,  H01L27/1052 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.

摘要翻译： 通过对使用氧化物半导体膜的晶体管赋予稳定的电特性来制造高可靠性的半导体器件。 在使用有源层的氧化物半导体膜的晶体管中，在与沟道区相邻的源极区域和漏极区域中设置有微孔。 通过在形成于氧化物半导体膜中的源极区域和漏极区域内设置微孔，氧化物半导体膜的沟道区域中所含的氢能够被捕获在微孔中。

公开(公告)号：US20120034758A1

公开(公告)日：2012-02-09

申请号：US13192498

申请日：2011-07-28

申请人： Junichi KOEZUKA

发明人： Junichi KOEZUKA

IPC分类号： H01L21/265

CPC分类号： H01L21/324 ,  H01L21/76254 ,  H01L21/84

摘要： A cap film which can prevent diffusion of hydrogen from the embrittled region and supply hydrogen to a region between the embrittled region and the surface of the semiconductor substrate is formed over the semiconductor substrate, and the semiconductor layer is transferred from the semiconductor substrate to the base substrate. In particular, the amount of hydrogen contained in the cap film formed over the semiconductor substrate is preferably greater than or equal to the irradiation amount of hydrogen ions.

摘要翻译： 可以在半导体衬底上形成能够防止氢从脆化区域扩散并向脆化区域和半导体衬底表面之间的区域供给氢的盖膜，半导体层从半导体衬底转移到基底 基质。 特别地，形成在半导体衬底上的盖膜中所含的氢的量优选大于或等于氢离子的照射量。