公开(公告)号：US20100301329A1

公开(公告)日：2010-12-02

申请号：US12787813

申请日：2010-05-26

申请人： Yuji ASANO ,  Junichi KOEZUKA

发明人： Yuji ASANO ,  Junichi KOEZUKA

IPC分类号： H01L29/786 ,  H01L21/36

CPC分类号： H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/465 ,  H01L21/47635 ,  H01L21/477 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a thin film transistor using an oxide semiconductor layer, in which contact resistance between the oxide semiconductor layer and source and drain electrode layers is reduced and electric characteristics are stabilized. Another object is to provide a method for manufacturing the thin film transistor. A thin film transistor using an oxide semiconductor layer is formed in such a manner that buffer layers having higher conductivity than the oxide semiconductor layer are formed over the oxide semiconductor layer, source and drain electrode layers are formed over the buffer layers, and the oxide semiconductor layer is electrically connected to the source and drain electrode layers with the buffer layers interposed therebetween. In addition, the buffer layers are subjected to reverse sputtering treatment and heat treatment in a nitrogen atmosphere, whereby the buffer layers having higher conductivity than the oxide semiconductor layer are obtained.

摘要翻译： 目的是提供一种使用氧化物半导体层的薄膜晶体管，其中氧化物半导体层和源极和漏极电极层之间的接触电阻减小并且电特性稳定。 另一个目的是提供制造薄膜晶体管的方法。 使用氧化物半导体层的薄膜晶体管形成为在氧化物半导体层上形成具有比氧化物半导体层更高的导电性的缓冲层，在缓冲层上形成源极和漏极层，并且氧化物半导体 层与源极和漏极电极层电连接，缓冲层插入其间。 此外，缓冲层在氮气气氛中进行反溅射处理和热处理，由此获得具有比氧化物半导体层更高的导电性的缓冲层。

公开(公告)号：US20100252832A1

公开(公告)日：2010-10-07

申请号：US12748521

申请日：2010-03-29

申请人： Yuji ASANO ,  Junichi KOEZUKA

发明人： Yuji ASANO ,  Junichi KOEZUKA

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/66969 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/477 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a thin film transistor using an oxide semiconductor layer, in which contact resistance between the oxide semiconductor layer and source and drain electrode layers is reduced and electric characteristics are stabilized. The thin film transistor is formed in such a manner that a buffer layer including a high-resistance region and low-resistance regions is formed over an oxide semiconductor layer, and the oxide semiconductor layer and source and drain electrode layers are in contact with each other with the low-resistance region of the buffer layer interposed therebetween.

摘要翻译： 目的是提供一种使用氧化物半导体层的薄膜晶体管，其中氧化物半导体层和源极和漏极电极层之间的接触电阻减小并且电特性稳定。 薄膜晶体管形成为在氧化物半导体层上形成包括高电阻区域和低电阻区域的缓冲层，并且氧化物半导体层和源极和漏极电极层彼此接触 其中缓冲层的低电阻区域插入其间。

公开(公告)号：US20100117073A1

公开(公告)日：2010-05-13

申请号：US12612021

申请日：2009-11-04

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Junichi KOEZUKA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Junichi KOEZUKA

IPC分类号： H01L29/786 ,  H01L21/34

CPC分类号： H01L29/66742 ,  C04B35/58 ,  C04B2235/3284 ,  C04B2235/3286 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

摘要： In a thin film transistor which uses an oxide semiconductor, buffer layers containing indium, gallium, zinc, oxygen, and nitrogen are provided between the oxide semiconductor layer and the source and drain electrode layers.

摘要翻译： 在使用氧化物半导体的薄膜晶体管中，在氧化物半导体层和源极和漏极电极层之间设置包含铟，镓，锌，氧和氮的缓冲层。

公开(公告)号：US20100109058A1

公开(公告)日：2010-05-06

申请号：US12609032

申请日：2009-10-30

申请人： Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Junichi KOEZUKA

发明人： Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Junichi KOEZUKA

IPC分类号： H01L29/78 ,  H01B1/06 ,  B05D5/12 ,  C23C14/34

CPC分类号： C23C14/5846 ,  C04B35/58 ,  C04B2235/3284 ,  C04B2235/3286 ,  C23C14/0057 ,  C23C14/0676 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/7869

摘要： An electrode formed using a transparent conductive oxide is likely to be crystallized by heat treatment performed in the manufacturing process of a semiconductor device. In the case of a thin film element using an electrode having a significantly uneven surface due to crystallization, a short circuit is likely to occur and thus reliability of the element is degraded. An object is to provide a light-transmitting conductive oxynitride which is not crystallized even if subjected to heat treatment and a manufacturing method thereof. It is found that an oxynitride containing indium, gallium, and zinc, to which hydrogen atoms are added as impurities, is a light-transmitting conductive film which is not crystallized even if heated at 350° C. and the object is achieved.

摘要翻译： 使用透明导电氧化物形成的电极可能通过在半导体器件的制造过程中进行的热处理而结晶化。 在使用由于结晶而具有显着不平坦表面的电极的薄膜元件的情况下，可能发生短路，因此元件的可靠性降低。 本发明的目的是提供即使经受热处理也不结晶的透光导电氮氧化物及其制造方法。 发现含有氢原子作为杂质的含有铟，镓和锌的氮氧化物是透光性导电膜，即使在350℃下加热也不会结晶，实现了目的。

公开(公告)号：US20100252827A1

公开(公告)日：2010-10-07

申请号：US12748520

申请日：2010-03-29

申请人： Yuji ASANO ,  Junichi KOEZUKA

发明人： Yuji ASANO ,  Junichi KOEZUKA

IPC分类号： H01L29/786 ,  H01L21/34

CPC分类号： H01L29/7869 ,  C04B35/58 ,  C04B2235/3284 ,  C04B2235/3286 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78618

摘要： An object is to provide a thin film transistor including an oxide semiconductor layer, in which the contact resistance between the oxide semiconductor layer and source and drain electrode layers is reduced and whose electric characteristics are stabilized. Another object is to provide a method for manufacturing the thin film transistor. The thin film transistor including an oxide semiconductor layer is formed in such a manner that buffer layers whose conductivity is higher than that of the oxide semiconductor layer are formed and the oxide semiconductor layer and the source and drain electrode layers are electrically connected to each other through the buffer layers. In addition, the buffer layers whose conductivity is higher than that of the oxide semiconductor layer are subjected to reverse sputtering treatment and heat treatment in a nitrogen atmosphere.

摘要翻译： 目的是提供一种薄膜晶体管，其包括氧化物半导体层，其中氧化物半导体层与源极和漏极电极层之间的接触电阻降低并且其电特性稳定。 另一个目的是提供制造薄膜晶体管的方法。 包括氧化物半导体层的薄膜晶体管形成为形成电导率高于氧化物半导体层的缓冲层的方式，并且氧化物半导体层和源极和漏极电极层通过 缓冲层。 此外，在氮气气氛中对导电率高于氧化物半导体层的缓冲层进行反溅射处理和热处理。

公开(公告)号：US20100163874A1

公开(公告)日：2010-07-01

申请号：US12641446

申请日：2009-12-18

申请人： Jun KOYAMA ,  Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Junichi KOEZUKA

发明人： Jun KOYAMA ,  Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Junichi KOEZUKA

IPC分类号： H01L27/06

CPC分类号： H01L27/1255 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/127 ,  H01L28/20 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/7869

摘要： The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

摘要翻译： 通过使用含有氢化合物如硅烷（SiH 4）和氨（NH 3）的气体的等离子体CVD形成的氮化硅层910设置在与用于电阻器354的氧化物半导体层905上并直接接触，并且氮化硅 在用于薄膜晶体管355的氧化物半导体层906上设置层910，氧化硅层909用作阻挡层。 因此，与氧化物半导体层906相比，在氧化物半导体层905中引入更高浓度的氢。结果，使用于电阻器354的氧化物半导体层905的电阻比氧化物半导体层的电阻低 906用于薄膜晶体管355。

公开(公告)号：US20130023087A1

公开(公告)日：2013-01-24

申请号：US13547451

申请日：2012-07-12

申请人： Shunpei YAMAZAKI ,  Shinji OHNO ,  Yuichi SATO ,  Junichi KOEZUKA ,  Sachiaki TEZUKA

发明人： Shunpei YAMAZAKI ,  Shinji OHNO ,  Yuichi SATO ,  Junichi KOEZUKA ,  Sachiaki TEZUKA

IPC分类号： H01L21/385 ,  H01L21/36

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225

摘要： To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film.

摘要翻译： 提供一种可以应用于晶体管的包含低电阻区域的氧化物半导体膜。 提供可以高速执行的包括氧化物半导体膜的晶体管。 提供一种高性能半导体器件，其包括能够以高产率高速执行的包括氧化物半导体膜的晶体管。 在氧化物半导体膜上形成具有还原性的膜。 接下来，氧原子的一部分从氧化物半导体膜转移到具有还原性的膜。 接下来，通过具有还原性的膜向氧化物半导体膜添加杂质，然后去除具有还原性的膜，从而在氧化物半导体膜中形成低电阻区域。

公开(公告)号：US20130020569A1

公开(公告)日：2013-01-24

申请号：US13547119

申请日：2012-07-12

申请人： Shunpei YAMAZAKI ,  Naoto YAMADE ,  Junichi KOEZUKA

发明人： Shunpei YAMAZAKI ,  Naoto YAMADE ,  Junichi KOEZUKA

IPC分类号： H01L29/12

CPC分类号： H01L27/1225

摘要： A semiconductor device which can operate at high speed and consumes a smaller amount of power is provided. In a semiconductor device including transistors each including an oxide semiconductor, the oxygen concentration of the oxide semiconductor film of the transistor having small current at negative gate voltage is different from that of the oxide semiconductor film of the transistor having high field-effect mobility and large on-state current. Typically, the oxygen concentration of the oxide semiconductor film of the transistor having high field-effect mobility and large on-state current is lower than that of the oxide semiconductor film of the transistor having small current at negative gate voltage.

摘要翻译： 提供了可以高速运行并消耗更少功率的半导体器件。 在包括各自包含氧化物半导体的晶体管的半导体器件中，在负栅极电压下具有小电流的晶体管的氧化物半导体膜的氧浓度与具有高场效应迁移率的晶体管的氧化物半导体膜的氧浓度不同 通态电流。 通常，具有高场电迁移率和大导通状态电流的晶体管的氧化物半导体膜的氧浓度低于在负栅极电压下具有小电流的晶体管的氧化物半导体膜的氧浓度。

公开(公告)号：US20120305907A1

公开(公告)日：2012-12-06

申请号：US13584116

申请日：2012-08-13

申请人： Takahiro IBE ,  Hisao IKEDA ,  Junichi KOEZUKA ,  Kaoru KATO

发明人： Takahiro IBE ,  Hisao IKEDA ,  Junichi KOEZUKA ,  Kaoru KATO

IPC分类号： H01L51/52 ,  H01L51/56

CPC分类号： H01L51/5237 ,  H01L27/3244 ,  H01L51/0042 ,  H01L51/0052 ,  H01L51/0053 ,  H01L51/0054 ,  H01L51/0055 ,  H01L51/0056 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0071 ,  H01L51/0085 ,  H01L51/0089 ,  H01L51/524 ,  H01L51/5253

摘要： Objects of the present invention are to provide a light-emitting element that does not readily deteriorate, a light-emitting device and an electronic device that do not readily deteriorate, and a method of fabricating the light-emitting element that does not readily deteriorate. A light-emitting element having an EL layer between a pair of electrodes is covered with a layer containing an inorganic compound and halogen atoms or a layer containing an organic compound, an inorganic compound, and halogen atoms, whereby deterioration by moisture penetration can be inhibited. Thus, a light-emitting element with a long life can be obtained.

摘要翻译： 本发明的目的是提供一种不容易劣化的发光元件，不容易劣化的发光器件和电子器件，以及不易于劣化的制造发光元件的方法。 在一对电极之间具有EL层的发光元件被含有无机化合物和卤素原子的层或含有有机化合物，无机化合物和卤素原子的层覆盖，由此可以抑制通过水分渗透的劣化 。 因此，可以获得具有长寿命的发光元件。

公开(公告)号：US20120231580A1

公开(公告)日：2012-09-13

申请号：US13413684

申请日：2012-03-07

申请人： Shunpei YAMAZAKI ,  Yuhei SATO ,  Keiji SATO ,  Tetsunori MARUYAMA ,  Junichi KOEZUKA

发明人： Shunpei YAMAZAKI ,  Yuhei SATO ,  Keiji SATO ,  Tetsunori MARUYAMA ,  Junichi KOEZUKA

IPC分类号： H01L21/42

CPC分类号： H01L21/40 ,  H01L21/02175 ,  H01L21/02252 ,  H01L21/02565 ,  H01L21/02636 ,  H01L21/02664 ,  H01L21/324 ,  H01L21/383 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.

摘要翻译： 在包括氧化物半导体膜的晶体管的制造过程中，对氧化物半导体膜进行氧掺杂处理，然后对氧化物半导体膜和设置在氧化物半导体膜上的氧化铝膜进行热处理。 因此，形成包含比化学计量组成物多的氧的区域的氧化物半导体膜。 使用氧化物半导体膜形成的晶体管可以具有高的可靠性，因为通过偏压 - 温度应力测试（BT测试）的晶体管的阈值电压的变化量减小。