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    LIGHT MODULATED ELECTRON SOURCE
    11.
    发明申请
    LIGHT MODULATED ELECTRON SOURCE 有权

    公开(公告)号：US20210098222A1

    公开(公告)日：2021-04-01

    申请号：US17020277

    申请日：2020-09-14

    Applicant: KLA Corporation

    Inventor： Edgardo Garcia Berrios ,  J. Joseph Armstrong ,  Yinying Xiao-Li ,  John Fielden ,  Yung-Ho Alex Chuang

    IPC: H01J1/304 ,  H01J37/073 ,  H01J3/02 ,  H01J37/317 ,  H01J37/28 ,  H01J35/06

    Abstract: A light modulated electron source utilizes a photon-beam source to modulate the emission current of an electron beam emitted from a silicon-based field emitter. The field emitter's cathode includes a protrusion fabricated on a silicon substrate and having an emission tip covered by a coating layer. An extractor generates an electric field that attracts free electrons toward the emission tip for emission as part of the electron beam. The photon-beam source generates a photon beam including photons having an energy greater than the bandgap of silicon, and includes optics that direct the photon beam onto the emission tip, whereby each absorbed photon creates a photo-electron that combines with the free electrons to enhance the electron beam's emission current. A controller modulates the emission current by controlling the intensity of the photon beam applied to the emission tip. A monitor measures the electron beam and provides feedback to the controller.

    Strontium Tetraborate as Optical Glass Material
    12.
    发明申请
    Strontium Tetraborate as Optical Glass Material 有权

    公开(公告)号：US20210010948A1

    公开(公告)日：2021-01-14

    申请号：US16921738

    申请日：2020-07-06

    Applicant: KLA Corporation

    Inventor： Yung-Ho Alex Chuang ,  Yinying Xiao-Li ,  Elena Loginova ,  John Fielden

    IPC: G01N21/95 ,  G02B27/10 ,  G02B1/113 ,  G01N21/88

    Abstract: Strontium tetraborate can be used as an optical material. Strontium tetraborate exhibits high refractive indices, high optical damage threshold, and high microhardness. The transmission window of strontium tetraborate covers a very broad range of wavelengths, from 130 nm to 3200 nm, making the material particularly useful at VUV wavelengths. An optical component made of strontium tetraborate can be incorporated in an optical system, such as a semiconductor inspection system, a metrology system, or a lithography system. These optical components may include mirrors, lenses, lens arrays, prisms, beam splitters, windows, lamp cells or Brewster-angle optics.

    Frequency Conversion Using Interdigitated Nonlinear Crystal Gratings
    14.
    发明公开
    Frequency Conversion Using Interdigitated Nonlinear Crystal Gratings 审中-公开

    公开(公告)号：US20230161221A1

    公开(公告)日：2023-05-25

    申请号：US18087236

    申请日：2022-12-22

    Applicant: KLA Corporation

    Inventor： Yung-Ho Alex Chuang ,  Yinying Xiao-Li ,  Elena Loginova ,  John Fielden ,  Baigang Zhang ,  Xuefeng Liu ,  Kelly Ann Weekley Mauser

    IPC: G02F1/35 ,  G02F1/355

    CPC classification number: G02F1/354 ,  G02F1/3551 ,  G02F1/3548 ,  G02F1/3507 ,  G02F1/3503

    Abstract: A nonlinear crystal grating assembly including two integral nonlinear crystal grating structures having inverted crystal axes and having parallel spaced-apart mesas with predetermined mesa widths arranged such that, when assembled in an interdigitated configuration, the mesas of the two grating structures form an alternating grating pattern that is aligned with a propagation direction of input light, thereby creating a periodic structure for quasi-phase-matching (QPM). The nonlinear crystal grating structures are formed using strontium tetraborate, lithium triborate or another nonlinear crystal material. The nonlinear crystal grating assembly is utilized in a laser assembly in which fundamental wavelengths are doubled and/or summed using intermediate frequency conversion stages, and then a final frequency converting stage utilizes the nonlinear crystal grating assembly to double or sum one or more intermediate light beam frequencies to generate laser output light at high power and photon energy levels. A method and inspection system are also described.

    Light Modulated Electron Source
    15.
    发明申请
    Light Modulated Electron Source 有权

    公开(公告)号：US20220336180A1

    公开(公告)日：2022-10-20

    申请号：US17858943

    申请日：2022-07-06

    Applicant: KLA Corporation

    Inventor： Edgardo Garcia Berrios ,  J. Joseph Armstrong ,  Yinying Xiao-Li ,  John Fielden ,  Yung-Ho Alex Chuang

    IPC: H01J1/304 ,  H01J3/02 ,  H01J37/073

    Abstract: A light modulated electron source utilizes a photon-beam source to modulate the emission current of an electron beam emitted from a silicon-based field emitter. The field emitter's cathode includes a protrusion fabricated on a silicon substrate and having an emission tip covered by a coating layer. An extractor generates an electric field that attracts free electrons toward the emission tip for emission as part of the electron beam. The photon-beam source generates a photon beam including photons having an energy greater than the bandgap of silicon, and includes optics that direct the photon beam onto the emission tip, whereby each absorbed photon creates a photo-electron that combines with the free electrons to enhance the electron beam's emission current. A controller modulates the emission current by controlling the intensity of the photon beam applied to the emission tip. A monitor measures the electron beam and provides feedback to the controller.

    Light modulated electron source
    16.
    发明授权
    Light modulated electron source 有权

    公开(公告)号：US11417492B2

    公开(公告)日：2022-08-16

    申请号：US17020277

    申请日：2020-09-14

    Applicant: KLA Corporation

    Inventor： Edgardo Garcia Berrios ,  J. Joseph Armstrong ,  Yinying Xiao-Li ,  John Fielden ,  Yung-Ho Alex Chuang

    IPC: H01J1/304 ,  H01J3/02 ,  H01J37/073 ,  H01J35/06 ,  H01J37/28 ,  H01J37/317

    Abstract: A light modulated electron source utilizes a photon-beam source to modulate the emission current of an electron beam emitted from a silicon-based field emitter. The field emitter's cathode includes a protrusion fabricated on a silicon substrate and having an emission tip covered by a coating layer. An extractor generates an electric field that attracts free electrons toward the emission tip for emission as part of the electron beam. The photon-beam source generates a photon beam including photons having an energy greater than the bandgap of silicon, and includes optics that direct the photon beam onto the emission tip, whereby each absorbed photon creates a photo-electron that combines with the free electrons to enhance the electron beam's emission current. A controller modulates the emission current by controlling the intensity of the photon beam applied to the emission tip. A monitor measures the electron beam and provides feedback to the controller.

    Broadband ultraviolet illumination sources
    17.
    发明授权
    Broadband ultraviolet illumination sources 有权

    公开(公告)号：US11011366B2

    公开(公告)日：2021-05-18

    申请号：US16879310

    申请日：2020-05-20

    Applicant: KLA Corporation

    Inventor： Yung-Ho Alex Chuang ,  Yinying Xiao-Li ,  Edgardo Garcia-Berrios ,  John Fielden

    IPC: H01J61/067 ,  G01N21/88 ,  H01J61/10 ,  G01N21/95

    Abstract: A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes an enclosure having one or more walls, the enclosure configured to contain a gas, and a plasma discharge device based on a graphene-dielectric-semiconductor (GOS) planar-type structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one layer of graphene disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50 V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the enclosure or magnets placed outside the enclosure to increase the current density.

    Strontium tetraborate as optical coating material
    18.
    发明授权
    Strontium tetraborate as optical coating material 有权

    公开(公告)号：US10921261B2

    公开(公告)日：2021-02-16

    申请号：US16819991

    申请日：2020-03-16

    Applicant: KLA Corporation

    Inventor： Yung-Ho Alex Chuang ,  Yinying Xiao-Li ,  Elena Loginova ,  John Fielden

    IPC: G03F1/36 ,  G03F7/20 ,  G01N21/95 ,  G02F1/35 ,  G02F1/355 ,  G02B21/00 ,  G02B5/28 ,  G02B21/06 ,  G01N21/33 ,  G02B21/16 ,  H01L21/66

    Abstract: Strontium tetraborate is used as an optical coating material for optical components utilized in semiconductor inspection and metrology systems to take advantage of its high refractive indices, high optical damage threshold and high microhardness in comparison to conventional optical materials. At least one layer of strontium tetraborate is formed on the light receiving surface of an optical component's substrate such that its thickness serves to increase or decrease the reflectance of the optical component. One or multiple additional coating layers may be placed on top of or below the strontium tetraborate layer, with the additional coating layers consisting of conventional optical materials. The thicknesses of the additional layers may be selected to achieve a desired reflectance of the optical component at specific wavelengths. The coated optical component is used in an illumination source or optical system utilized in a semiconductor inspection system, a metrology system or a lithography system.

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