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    Method and System for Generating Programmed Defects for Use in Metrology Measurements
    11.
    发明申请
    Method and System for Generating Programmed Defects for Use in Metrology Measurements 审中-公开

    公开(公告)号：US20180113387A1

    公开(公告)日：2018-04-26

    申请号：US15730551

    申请日：2017-10-11

    Applicant: KLA-Tencor Corporation

    Inventor： Hong Xiao ,  Nadav Gutman

    IPC: G03F7/20 ,  G01N21/95 ,  H01J37/28

    Abstract: A system for generating and implementing programmed defects includes a lithography tool configured to form a multi-pattern structure including a first array pattern and a second array pattern on a sample. The first array pattern or the second array pattern contains a programmed defect to differentiate the first array pattern from the second array pattern. The system includes a metrology tool configured to acquire one or more images of the first array pattern and the second array pattern having a field-of-view containing the programmed defect. The system includes a controller including one or more processors. The one or more processors are configured to receive the images of the first array pattern and the second array pattern from the metrology, and determine a metrology parameter associated with the first array pattern or the second array pattern.

    Utilizing overlay misregistration error estimations in imaging overlay metrology
    13.
    发明授权
    Utilizing overlay misregistration error estimations in imaging overlay metrology 有权

    公开(公告)号：US10565697B2

    公开(公告)日：2020-02-18

    申请号：US15739381

    申请日：2017-10-22

    Applicant: KLA-Tencor Corporation

    Inventor： Tzahi Grunzweig ,  Nadav Gutman ,  David Gready ,  Mark Ghinovker ,  Vladimir Levinski ,  Claire E. Staniunas ,  Nimrod Shuall ,  Yuri Paskover

    IPC: G06T7/00 ,  G03G15/00 ,  G06T7/73

    Abstract: Systems and methods are provided, which calculate overlay misregistration error estimations from analyzed measurements of each ROI (region of interest) in at least one metrology imaging target, and incorporate the calculated overlay misregistration error estimations in a corresponding estimation of overlay misregistration. Disclosed embodiments provide a graduated and weighted analysis of target quality which may be integrated in a continuous manner into the metrology measurement processes, and moreover evaluates target quality in terms of overlay misregistration, which forms a common basis for evaluation of errors from different sources, such as characteristics of production steps, measurement parameters and target characteristics. Such common basis then enables any of combining various error sources to give a single number associated with measurement fidelity, analyzing various errors at wafer, lot and process levels, and/or to trade-off the resulting accuracy for throughput by reducing the number of measurements, in a controlled manner.

    Identifying process variations during product manufacture
    15.
    发明授权
    Identifying process variations during product manufacture 有权

    公开(公告)号：US10379449B2

    公开(公告)日：2019-08-13

    申请号：US15760787

    申请日：2018-02-07

    Applicant: KLA-TENCOR CORPORATION

    Inventor： Tzahi Grunzweig ,  Nadav Gutman ,  Claire E. Staniunas ,  Tal Marciano ,  Nimrod Shuall

    IPC: G03F7/20 ,  H01L21/66 ,  G01N21/01

    Abstract: Systems and method are presented for identifying process variations during manufacture of products such as semiconductor wafers. At a predetermined stage during manufacture of a first products, images of an area of the first product are obtained using different values of at least one imaging parameter. The images are then analyzed to generate a first contrast signature for said first product indicating variations of contrast with said at least one imaging parameter. At the same predetermined stage during manufacture of a second product, images of an area of said second product are obtained corresponding to said area of said first product using different values of said at least one imaging parameter. The images are analyzed to generate a second contrast signature for said second product indicating variations of contrast with said at least one imaging parameter. The first and second contrast signatures are compared to identify whether a variation in process occurred between manufacture of said first and second products.

    SYSTEMS AND METHODS FOR DEVICE-CORRELATED OVERLAY METROLOGY
    16.
    发明申请
    SYSTEMS AND METHODS FOR DEVICE-CORRELATED OVERLAY METROLOGY 审中-公开

    公开(公告)号：US20190179231A1

    公开(公告)日：2019-06-13

    申请号：US16009939

    申请日：2018-06-15

    Applicant: KLA-Tencor Corporation

    Inventor： Frank Laske ,  Ulrich Pohlmann ,  Stefan Eyring ,  Nadav Gutman

    IPC: G03F7/20 ,  G01B11/27 ,  G01B15/00

    CPC classification number: G03F7/70633 ,  G01B11/272 ,  G01B15/00 ,  G01B2210/56

    Abstract: An overlay metrology system may measure a first-layer pattern placement distance between a pattern of device features and a pattern of reference features on a first layer of an overlay target on a sample. The system may further measure, subsequent to fabricating a second layer including at least the pattern of device features and the pattern of reference features, a second-layer pattern placement distance between the pattern of device features and the pattern of reference features on the second layer. The system may further measure a reference overlay based on relative positions of the pattern of reference features on the first layer and the second layer. The system may further determine a device-relevant overlay for the pattern of device-scale features by adjusting the reference overlay with a difference between the first-layer pattern placement distance and the second-layer pattern placement distance.

    Enhancing metrology target information content
    18.
    发明授权
    Enhancing metrology target information content 有权

    公开(公告)号：US11085754B2

    公开(公告)日：2021-08-10

    申请号：US16132157

    申请日：2018-09-14

    Applicant: KLA-Tencor Corporation

    Inventor： Eran Amit ,  Amnon Manassen ,  Nadav Gutman

    IPC: G01B11/06 ,  G06N20/00 ,  G03F7/20 ,  G01N21/47

    Abstract: Metrology targets designs, design methods and measurement methods are provided, which reduce noise and enhance measurement accuracy. Disclosed targets comprise an additional periodic structure which is orthogonal to the measurement direction along which given target structures are periodic. For example, in addition to two or more periodic structures along each measurement direction in imaging or scatterometry targets, a third, orthogonal periodic structure may be introduced, which provides additional information in the orthogonal direction, can be used to reduce noise, enhances accuracy and enables the application of machine learning algorithms to further enhance accuracy. Signals may be analyzed slice-wise with respect to the orthogonal periodic structure, which can be integrated in a process compatible manner in both imaging and scatterometry targets.

    Metrology and control of overlay and edge placement errors
    20.
    发明授权
    Metrology and control of overlay and edge placement errors 有权

    公开(公告)号：US10533848B2

    公开(公告)日：2020-01-14

    申请号：US16057498

    申请日：2018-08-07

    Applicant: KLA-Tencor Corporation

    Inventor： Andrei V. Shchegrov ,  Frank Laske ,  Nadav Gutman

    IPC: G01B11/27 ,  G03F7/20 ,  G01B15/00

    Abstract: An overlay metrology system may include a controller to generate optical tool error adjustments for a hybrid overlay target including optically-resolvable features and device-scale features by measuring a difference between an optical overlay measurement based on the optically-resolvable features and a device-scale overlay measurement based on the device-scale features, generate target-to-device adjustments for the hybrid overlay target based on positions of features within the device area, determine device-relevant overlay measurements for one or more locations in the device area based on at least one of the optical overlay measurement, the optical tool error adjustments, or the target-to-device adjustments, and provide overlay correctables for the device area to a lithography tool to modify exposure conditions for at least one subsequent exposure based on the device-relevant overlay measurements.

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