公开(公告)号：US06513452B2

公开(公告)日：2003-02-04

申请号：US09841804

申请日：2001-04-24

申请人： Hongching Shan ,  Evans Y. Lee ,  Michael D. Welch ,  Robert W. Wu ,  Bryan Y. Pu ,  Paul E. Luscher ,  James D. Carducci ,  Richard Blume

发明人： Hongching Shan ,  Evans Y. Lee ,  Michael D. Welch ,  Robert W. Wu ,  Bryan Y. Pu ,  Paul E. Luscher ,  James D. Carducci ,  Richard Blume

IPC分类号： C23C1600

CPC分类号： H01J37/32834 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32706

摘要： A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage. By blocking the plasma from reaching the exhaust pump, the exhaust baffle reduces the deposition of unwanted particles on exhaust pump components. The exhaust baffle also reduces the cathode DC bias by reducing the effective surface area of the electrically grounded chamber wall which couples RF power to the plasma.

摘要翻译： 一种调整用于制造半导体器件的等离子体室中的阴极直流偏压的方法。 电介质屏蔽件位于等离子体和室的电接地部件的选定部分之间，例如电接地室壁。 通过控制一个或多个以下参数来调节阴极直流偏压：（1）腔室壁的表面积或由介电屏蔽件阻挡的其它接地部件; （2）电介质的厚度; （3）屏蔽和室壁之间的间隙; 和（4）介电材料的介电常数。 在装置方面，本发明是用于制造半导体器件的等离子体室，其具有带有多个弯曲通道的排气挡板。 每个通道足够长和弯曲，使得室内的等离子体的任何部分不能延伸超过通道的出口。 通过阻止等离子体到达排气泵，排气挡板减少排气泵部件上不想要的颗粒的沉积。 排气挡板还通过减少将RF功率耦合到等离子体的电接地室壁的有效表面积来减小阴极DC偏压。

公开(公告)号：US6076482A

公开(公告)日：2000-06-20

申请号：US937347

申请日：1997-09-20

申请人： Ji Ding ,  James Carducci ,  Hongching Shan ,  Siamak Salimian ,  Evans Lee ,  Paul E. Luscher ,  Mike Welch

发明人： Ji Ding ,  James Carducci ,  Hongching Shan ,  Siamak Salimian ,  Evans Lee ,  Paul E. Luscher ,  Mike Welch

IPC分类号： H01J37/32 ,  C23C16/00 ,  C23F1/02 ,  H01L21/302

CPC分类号： H01J37/32458 ,  H01J37/321

摘要： The invention contours the chamber surface overlying semiconductor wafer being processed (i.e., the chamber ceiling) in such a way as to promote or optimize the diffusion of plasma ions from their regions of origin to other regions which would otherwise have a relative paucity of plasma ions. This is accomplished by providing a greater chamber volume over those areas of the wafer otherwise experiencing a shortage of plasma ions and a smaller chamber volume over those areas of the wafer experiencing a plentitude of plasma ions (e.g, due to localized plasma generation occurring over the latter areas). Thus, the ceiling is contoured to promote a plasma ion diffusion which best compensates for localized or non-uniform patterns in plasma ion generation typical of an inductively coupled source (e.g., an overhead inductive antenna). Specifically, the invention provides a lesser ceiling height (relative to the wafer surface) over regions in which plasma ions are generated or tend to congregate and a greater ceiling height in other regions. More specifically, in the case of an overlying inductive antenna where plasma ion density tends to fall off toward the wafer periphery, the ceiling contour is such that the ceiling height increases radially, i.e., toward the wafer periphery. This promotes or increases plasma ion diffusion toward the wafer periphery as a function of the rate at which the ceiling height increases radially.

摘要翻译： 本发明轮廓地覆盖正在被处理的半导体晶片（即，室顶）上的腔表面，以促进或优化等离子体离子从其原始区域扩散到否则将具有相对低的等离子体离子的其它区域 。 这通过在晶片的那些区域上提供更大的室体积，否则经历等离子体离子的短缺，并且在经历等离子体离子的大量的晶片的那些区域（例如，由于在 后面的区域）。 因此，天花板的轮廓是促进等离子体离子扩散，其最好地补偿电感耦合源（例如，架空感应天线）典型的等离子体离子产生中的局部或非均匀图案。 具体地说，本发明提供了在其中产生等离子体离子或倾向聚集的区域和在其它区域中具有更大的天花板高度的较小的天花板高度（相对于晶片表面）。 更具体地说，在等离子体离子密度倾向于朝向晶片周边倾斜的上覆感应天线的情况下，天花板高度使天花板高度径向增加，即朝向晶片周边。 这促进或增加等离子体离子向晶片周边的扩散，这是天花板高度径向增加的速率的函数。

公开(公告)号：US4392453A

公开(公告)日：1983-07-12

申请号：US296288

申请日：1981-08-26

申请人： Paul E. Luscher

发明人： Paul E. Luscher

IPC分类号： H01L21/203 ,  C23C14/24 ,  C30B23/02 ,  C30B25/14 ,  C23C13/08

CPC分类号： C30B25/14 ,  C23C14/24 ,  C30B23/002 ,  Y10S148/169 ,  Y10S438/961

摘要： This invention relates to coating of substrates in a vacuum system. A beam of molecules incident upon a molecular beam converter is transformed into a molecular beam flowing from the converter toward a substrate to be coated, or on which a layer is to be grown epitaxially. The incident beam is directed onto a heated impingement surface. In most embodiments the impingement surface generally faces the substrate to be coated, and the incident beam strikes the surface from the substrate side. A heating means maintains the impingement surface at a designated temperature. The heating means is separated and shielded from the impingement surface to avoid introducing contaminants from the heating means into the converted molecular beam, and also to avoid adverse physical and chemical effects on the heating means caused by the incident beam and its dissociation products. The incident beam may consist of gaseous compounds of normally solid materials which are at least partially dissociated at the heated impingement surface; the converted beam will then differ from the incident beam in direction, angular distribution, and molecular species. Alternatively, the incident beam may consist of atoms or molecules of elemental solids, in which case reflection and angular redistribution, with or without further dissociation, may occur at the heated impingement surface. Coating uniformity and step coverage can be improved by controlling the size and shape of the incident beam.

摘要翻译： 本发明涉及在真空系统中涂覆基材。 入射到分子束转换器上的分子束被转换成从转化器流向待涂覆的衬底的分子束，或者在其上外延生长层。 入射光束被引导到加热的冲击表面上。 在大多数实施例中，冲击表面通常面向待涂覆的基底，并且入射光束从基底侧撞击表面。 加热装置将冲击表面保持在指定温度。 加热装置与冲击表面分离和屏蔽，以避免将来自加热装置的污染物引入转换的分子束中，并且还避免由入射光束及其解离产物引起的加热装置的不利的物理和化学作用。 入射光束可以由在加热的冲击表面处至少部分解离的通常固体材料的气态化合物组成; 然后，转换的光束将随着入射光束在方向，角度分布和分子种类上不同。 或者，入射光束可以由元素固体的原子或分子组成，在这种情况下，可能在加热的冲击表面上发生反射和角度再分布，有或没有进一步解离。 通过控制入射光束的尺寸和形状，可以提高涂层均匀性和台阶覆盖率。

公开(公告)号：US06916399B1

公开(公告)日：2005-07-12

申请号：US09325026

申请日：1999-06-03

申请人： Yan Rozenzon ,  Gil Lavi ,  Evans Y. Lee ,  Dong Ho Choi ,  Matt Hamrah ,  Paul E. Luscher ,  Kaushik Vaidya ,  Bryan Pu ,  Richard Fovell

发明人： Yan Rozenzon ,  Gil Lavi ,  Evans Y. Lee ,  Dong Ho Choi ,  Matt Hamrah ,  Paul E. Luscher ,  Kaushik Vaidya ,  Bryan Pu ,  Richard Fovell

IPC分类号： H01J37/32 ,  H01L21/00 ,  C23C16/00 ,  C23F1/00

CPC分类号： H01L21/67109 ,  H01J37/321 ,  H01J37/32522 ,  H01L21/67069

摘要： The present invention provides a temperature controlled energy transparent window or electrode used to advantage in a substrate processing system. The invention also provides methods associated with controlling lid temperature during processing and for controlling etching processes. In a preferred embodiment the invention provides a fluid supply system for the lid which allows the fluid to flow through a feedthrough and into and out of a channel formed in the window or electrode. The fluid supply system may also mount the window or electrode to a retaining ring which secures the window or electrode to the chamber. In another aspect the invention provides a bonded window or electrode having a first and second plate having a channel formed in the plates so that when the plates are bonded together they form a channel therein through which a temperature controlling fluid can be flowed. An external control system preferably regulates the temperature of the fluid.

摘要翻译： 本发明提供了一种在衬底处理系统中有利的温度控制能量透明窗或电极。 本发明还提供了与处理期间控制盖温度和控制蚀刻工艺相关的方法。 在优选实施例中，本发明提供了一种用于盖的流体供应系统，其允许流体流过馈通并进入和流出形成在窗户或电极中的通道。 流体供应系统还可以将窗口或电极安装到将窗户或电极固定到室的保持环上。 在另一方面，本发明提供了一种具有第一和第二板的键合窗或电极，该第一和第二板具有形成在板中的通道，使得当板接合在一起时，它们在其中形成通道，通过该通道可控制温度控制流体流动。 外部控制系统优选地调节流体的温度。

公开(公告)号：US06899111B2

公开(公告)日：2005-05-31

申请号：US09999751

申请日：2001-10-31

申请人： Paul E. Luscher ,  James D. Carducci ,  Siamak Salimian ,  Michael D. Welch

发明人： Paul E. Luscher ,  James D. Carducci ,  Siamak Salimian ,  Michael D. Welch

IPC分类号： B08B3/04 ,  H01L21/00 ,  B08B3/00

CPC分类号： H01L21/67051 ,  B08B3/04 ,  H01L21/67028 ,  Y10S134/902 ,  Y10S438/905

摘要： The present invention provides a method and an apparatus for cleaning substrates. The cleaning chamber defines a processing cavity adapted to accommodate a substrate therein. In one embodiment, the cleaning chamber includes a chamber body having a processing cavity defined therein. A substrate is disposed in the processing cavity without contacting other chamber components by a Bernoulli effect and/or by a fluid cushion above and/or below the substrate. Fluid is flowed into the processing cavity at an angle relative to a radial line of the substrate to induce and/or control rotation of the substrate during a cleaning and drying process.

摘要翻译： 本发明提供一种清洗基板的方法和装置。 清洁室限定适于在其中容纳衬底的处理腔。 在一个实施例中，清洁室包括具有限定在其中的处理空腔的室主体。 衬底被布置在处理空腔中，而不通过伯努利效应和/或衬底上方和/或下方的流体垫接触其它腔室部件。 流体相对于基底的径向线以一定角度流入处理空腔，以在清洁和干燥过程中引导和/或控制基底的旋转。

公开(公告)号：US06535779B1

公开(公告)日：2003-03-18

申请号：US09036217

申请日：1998-03-06

申请人： Manush Birang ,  Gregory L. Kolte ,  Terry Lee Doyle ,  Nils Johansson ,  Paul E. Luscher ,  Leonid Poslavsky

发明人： Manush Birang ,  Gregory L. Kolte ,  Terry Lee Doyle ,  Nils Johansson ,  Paul E. Luscher ,  Leonid Poslavsky

IPC分类号： G06F766

CPC分类号： H01J37/32963 ,  G05B2219/25171 ,  G05B2219/2602 ,  H01J37/32935 ,  H01L22/26

摘要： A substrate processing system having a bi-directional interface and concomitant communication protocol to allow a controller to communicate with an external endpoint system is disclosed. More specifically, the substrate processing system comprises a controller and an endpoint detection system that are coupled together via a RS-232 interface. A SECS compliant communication protocol is employed to effect communication between the controller and endpoint detection system to increase wafer processing information exchange and data exchange.

摘要翻译： 公开了一种具有允许控制器与外部端点系统通信的双向接口和伴随通信协议的基板处理系统。 更具体地，基板处理系统包括通过RS-232接口耦合在一起的控制器和端点检测系统。 采用符合SECS标准的通信协议来实现控制器和端点检测系统之间的通信，以增加晶片处理信息交换和数据交换。

公开(公告)号：US06221782B1

公开(公告)日：2001-04-24

申请号：US09287701

申请日：1999-04-06

申请人： Hongching Shan ,  Evans Y. Lee ,  Michael D. Welch ,  Robert W. Wu ,  Bryan Y. Pu ,  Paul E. Luscher ,  James D. Carducci ,  Richard Blume

发明人： Hongching Shan ,  Evans Y. Lee ,  Michael D. Welch ,  Robert W. Wu ,  Bryan Y. Pu ,  Paul E. Luscher ,  James D. Carducci ,  Richard Blume

IPC分类号： H01L213065

CPC分类号： H01J37/32834 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32706

摘要： A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage. By blocking the plasma from reaching the exhaust pump, the exhaust baffle reduces the deposition of unwanted particles on exhaust pump components. The exhaust baffle also reduces the cathode DC bias by reducing the effective surface area of the electrically grounded chamber wall which couples RF power to the plasma.

公开(公告)号：US4201152A

公开(公告)日：1980-05-06

申请号：US881340

申请日：1978-02-27

申请人： Paul E. Luscher

发明人： Paul E. Luscher

IPC分类号： G01K1/14 ,  G01K7/02 ,  G01K7/08 ,  G01K13/00 ,  H01L21/203 ,  H01L21/26 ,  C23C13/08 ,  H01L21/68

CPC分类号： G01K7/08 ,  G01K1/146 ,  G01K13/00

摘要： The temperature of a substrate being coated by molecular beam epitaxial techniques is monitored during the deposition process. The substrate is mounted on a holder that is brought by a carriage to a treating station where the deposition occurs. At the station, a pair of metal contact pins selectively contact a surface of the holder. One of the contact pins and the surface, when contacting, form a first thermocouple junction; a second thermocouple junction is formed by the second contact pin and surface. The thermocouple junctions have dissimilar properties so that a voltage indicative of the temperature of the object is derived between them while the pins and surface contact each other. The holder is transferred between the treating station and carriage by translational and rotational motion of the holder and the carriage. While the translational and rotational motions occur, contact between the surface of the holder and the pins is prevented.

摘要翻译： 在沉积过程中监测通过分子束外延技术涂覆的衬底的温度。 衬底安装在由托架带到沉积发生的处理站的保持器上。 在工位，一对金属接触针选择性地接触保持器的表面。 接触销之一和表面在接触时形成第一热电偶结; 第二热电偶结由第二接触销和表面形成。 热电偶接头具有不同的性质，使得在引脚和表面彼此接触时，在它们之间导出表示物体的温度的电压。 通过夹持器和托架的平移和旋转运动，保持器在处理台和托架之间传送。 当发生平移和旋转运动时，防止了保持器的表面和销之间的接触。