公开(公告)号：US07479451B2

公开(公告)日：2009-01-20

申请号：US11180658

申请日：2005-07-14

申请人： Yuichi Harano ,  Jun Gotoh ,  Toshiki Kaneko ,  Masanao Yamamoto

发明人： Yuichi Harano ,  Jun Gotoh ,  Toshiki Kaneko ,  Masanao Yamamoto

IPC分类号： H01L21/44

CPC分类号： H01L21/28568 ,  G03G15/0131 ,  G03G15/1685 ,  G03G2215/0141 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76856 ,  H01L27/124 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/78603

摘要： The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of defective display can be obviated. An aluminum-based conductive layer is used in a source/drain electrode and a barrier layer made of molybdenum or a molybdenum alloy layer is formed between the aluminum-based conductive layer and a polysilicon layer. Further, a molybdenum oxide nitride film formed by the rapid heat treatment (rapid heat annealing) in a nitrogen atmosphere is formed over a surface of the molybdenum or the molybdenum alloy which constitutes the barrier layer.

摘要翻译： 本发明防止了在与低温多晶硅接触的源/漏电极中使用铝基导电层时，在加热步骤中铝元素扩散到多晶硅层中，从而可以发生不良显示 消除了 在源/漏电极中使用铝基导电层，并且在铝基导电层和多晶硅层之间形成由钼制成的阻挡层或钼合金层。 此外，在构成阻挡层的钼或钼合金的表面上形成在氮气氛中通过快速热处理（快速热退火）形成的氧化钼氮化物膜。

公开(公告)号：US08823906B2

公开(公告)日：2014-09-02

申请号：US13798317

申请日：2013-03-13

申请人： Jun Gotoh

发明人： Jun Gotoh

IPC分类号： G02F1/1337 ,  G02F1/1339 ,  G02F1/1335 ,  G02F1/1333

CPC分类号： G02F1/1337 ,  G02F1/133514 ,  G02F1/133516 ,  G02F2001/133388 ,  G02F2001/133519

摘要： Manufacturing method of a liquid crystal display device having a TFT substrate with a display area in which pixels are arranged, a counter substrate, a sealing material formed in a periphery to bond the TFT and counter substrates, and a liquid crystal layer interposed between an orientation film on the TFT substrate and an orientation film on the counter substrate. The method includes the steps of forming a first color filter, a second color filter, or a third color filter corresponding to each of the pixels in the display area of the TFT substrate, and forming an orientation film stopper by overlapping a portion of the first color filter, the second color filter, or the third color filter, in an area between the display area and the sealing material. A profile of the orientation film formed in the TFT substrate is defined by the orientation film stopper.

摘要翻译： 具有TFT基板的液晶显示装置的制造方法，具有排列像素的显示区域，对置基板，形成在外围的用于结合TFT和对置基板的密封材料以及夹在方向 TFT基板上的取向膜和对置基板上的取向膜。 该方法包括以下步骤：形成与TFT基板的显示区域中的每个像素相对应的第一滤色器，第二滤色器或第三滤色器，以及通过将第一滤色器， 滤色器，第二滤色器或第三滤色器，在显示区域和密封材料之间的区域中。 在TFT基板上形成的取向膜的轮廓由取向膜止动件限定。

公开(公告)号：US20070161167A1

公开(公告)日：2007-07-12

申请号：US11600727

申请日：2006-11-17

申请人： Jun Gotoh ,  Akio Kawano

发明人： Jun Gotoh ,  Akio Kawano

IPC分类号： H01L21/84

CPC分类号： H01L21/26506 ,  H01L27/1296

摘要： Non-uniformity of the sheet resistance associated with ion implantation into a polysilicon semiconductor layer using a ribbon-shaped beam is minimized to prevent variations in the characteristics of fabricated thin film transistors. When the implanted ions are of a first element, a second element that is heavy and has no influence on electric charge is implanted at a critical implantation quantity or more into a dose region of the polysilicon semiconductor layer into which the ions of the first element are implanted.

摘要翻译： 使用带状光束与多晶硅半导体层的离子注入相关联的薄层电阻的不均匀性被最小化，以防止制造的薄膜晶体管的特性的变化。 当植入的离子是第一元素时，重要且不影响电荷的第二元素以临界注入量或更多注入到多晶硅半导体层的剂量区域中，第一元素的离子为 植入。

公开(公告)号：US07009205B2

公开(公告)日：2006-03-07

申请号：US10337370

申请日：2003-01-07

申请人： Jun Gotoh ,  Katsutoshi Saito ,  Makoto Ohkura ,  Yukio Takasaki ,  Masanao Yamamoto

发明人： Jun Gotoh ,  Katsutoshi Saito ,  Makoto Ohkura ,  Yukio Takasaki ,  Masanao Yamamoto

IPC分类号： H01L29/04

CPC分类号： H01L29/66757 ,  H01L29/458

摘要： An image display device using transistors each having a polycrystalline semiconductor layer constructed so that drain and source regions are fully activated, and a manufacturing method thereof. The polycrystalline semiconductor layer is so provided that impurity concentrations are easy to control in LDD regions . The image display device further uses transistors having a gate electrode on an upper surface of the semiconductor layer with an insulating film therebetween, a drain region formed on one side of the gate electrode, and a source region formed on another side of the gate electrode. An activated P-type impurity is added to the area underlying the gate electrode, and an activated N-type impurity is added to the area excluding the area underlying the gate electrode.

摘要翻译： 一种使用晶体管的图像显示装置及其制造方法，所述晶体管具有构造为使得漏极和源极区域被完全激活的多晶半导体层。 提供多晶半导体层，使得在LDD区域中容易控制杂质浓度。 图像显示装置还在半导体层的上表面上具有栅电极的晶体管，其间具有绝缘膜，形成在栅电极的一侧上的漏极区域和形成在栅电极的另一侧上的源极区域。 将激活的P型杂质添加到栅电极下方的区域，并且将活化的N型杂质添加到除栅电极下方的区域。

公开(公告)号：US08817200B2

公开(公告)日：2014-08-26

申请号：US13028339

申请日：2011-02-16

申请人： Taro Asai ,  Jun Gotoh ,  Eiji Oue ,  Hiroaki Asuma ,  Katsumi Nakayashiki ,  Makoto Kurita

发明人： Taro Asai ,  Jun Gotoh ,  Eiji Oue ,  Hiroaki Asuma ,  Katsumi Nakayashiki ,  Makoto Kurita

IPC分类号： G02F1/136 ,  G02F1/1343

CPC分类号： G02F1/13306 ,  G02F1/136227 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/3248 ,  H01L27/3276 ,  H01L29/41733 ,  H01L29/78666 ,  H01L29/78675

摘要： A contact resistance in a through-hole with a source or a drain electrode connected to a TFT is decreased, thereby improving the operation efficiency of a display device.In the through-hole, a source portion of the TFT is connected to a source electrode 8. The source electrode 8 is formed of three layers comprising a barrier metal, an Al alloy 82, and a cap metal 83. The barrier metal is divided into a lower layer 81a in contact with the semiconductor layer and an upper layer 81b in contact with the Al alloy. The lower layer 81a of the barrier metal is formed by sputtering, the lower layer 81a is heat-treated and, subsequently, an upper layer 81b of the base metal, the Al alloy 82, and the cap metal 83 are formed continuously by sputtering. Since the upper layer 81b of the barrier metal in contact with the Al alloy 82 is not oxidized, increase in the contact resistance in the through-hole can be prevented.

摘要翻译： 与TFT连接的源极或漏极的通孔中的接触电阻降低，从而提高显示装置的操作效率。 在通孔中，TFT的源极部分连接到源电极8.源电极8由包括阻挡金属，Al合金82和帽金属83的三层形成。阻挡金属被分割 与半导体层接触的下层81a和与Al合金接触的上层81b。 通过溅射形成阻挡金属的下层81a，对下层81a进行热处理，然后通过溅射连续地形成基体金属，Al合金82和盖金属83的上层81b。 由于与Al合金82接触的阻挡金属的上层81b不被氧化，所以可以防止通孔中的接触电阻的增加。

公开(公告)号：US20130203313A1

公开(公告)日：2013-08-08

申请号：US13798317

申请日：2013-03-13

申请人： Jun Gotoh

发明人： Jun Gotoh

IPC分类号： G02F1/1335

CPC分类号： G02F1/1337 ,  G02F1/133514 ,  G02F1/133516 ,  G02F2001/133388 ,  G02F2001/133519

摘要： Manufacturing method of a liquid crystal display device having a TFT substrate with a display area in which pixels are arranged, a counter substrate, a sealing material formed in a periphery to bond the TFT and counter substrates, and a liquid crystal layer interposed between an orientation film on the TFT substrate and an orientation film on the counter substrate. The method includes the steps of forming a first color filter, a second color filter, or a third color filter corresponding to each of the pixels in the display area of the TFT substrate, and forming an orientation film stopper by overlapping a portion of the first color filter, the second color filter, or the third color filter, in an area between the display area and the sealing material. A profile of the orientation film formed in the TFT substrate is defined by the orientation film stopper.

摘要翻译： 具有TFT基板的液晶显示装置的制造方法，具有排列像素的显示区域，对置基板，形成在外围的用于结合TFT和对置基板的密封材料以及夹在方向 TFT基板上的取向膜和对置基板上的取向膜。 该方法包括以下步骤：形成与TFT基板的显示区域中的每个像素相对应的第一滤色器，第二滤色器或第三滤色器，以及通过将第一滤色器， 滤色器，第二滤色器或第三滤色器，在显示区域和密封材料之间的区域中。 在TFT基板上形成的取向膜的轮廓由取向膜止动件限定。

公开(公告)号：US20050253147A1

公开(公告)日：2005-11-17

申请号：US11115224

申请日：2005-04-27

申请人： Makoto Kurita ,  Jun Gotoh

发明人： Makoto Kurita ,  Jun Gotoh

IPC分类号： G02F1/1343 ,  G02F1/133 ,  G02F1/1335 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/10 ,  H01L29/786

CPC分类号： G02F1/133555 ,  G02F1/13439 ,  H01L27/12 ,  H01L27/124

摘要： The present invention provides a display device which can prevent the deterioration of a transparent conductive film attributed to a cell reaction without pushing up a cost of a film forming device. The display device includes a first conductive layer which is formed of a transparent conductive film containing indium oxide as a main component, a conductive background layer which is formed on the first conductive layer, a second conductive layer which is formed of a film containing Al as a main component on the background layer, and a third conductive layer which is formed of the same material as the second conductive layer on the second conductive layer. On an interface between the second conductive layer and the third conductive layer, positions of grain boundaries are arranged discontinuously. Further, the background layer is a film which contains any one of Mo, Ti and Ta as a main component. Still further, the third conductive layer is used as a reflective electrode.

摘要翻译： 本发明提供一种可以防止由于电池反应引起的透明导电膜的劣化而不会增加成膜装置的成本的显示装置。 显示装置包括由以氧化铟为主要成分的透明导电膜形成的第一导电层，形成在第一导电层上的导电背景层，第二导电层，其由含有Al的膜形成 背景层上的主要成分，和与第二导电层上的第二导电层相同的材料形成的第三导电层。 在第二导电层和第三导电层之间的界面上，晶界的位置不连续地排列。 此外，背景层是以Mo，Ti和Ta中的任一种为主要成分的膜。 此外，第三导电层用作反射电极。

公开(公告)号：US20050249525A1

公开(公告)日：2005-11-10

申请号：US11180358

申请日：2005-07-13

申请人： Yuichi Harano ,  Jun Gotoh ,  Toshiki Kaneko ,  Masanao Yamamoto

发明人： Yuichi Harano ,  Jun Gotoh ,  Toshiki Kaneko ,  Masanao Yamamoto

IPC分类号： G02F1/1368 ,  G09F9/30 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/768 ,  H01L21/77 ,  H01L23/52 ,  H01L29/417 ,  H01L29/45 ,  H01L29/786 ,  G03G15/01

CPC分类号： H01L21/28568 ,  G03G15/0131 ,  G03G15/1685 ,  G03G2215/0141 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76856 ,  H01L27/124 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/78603

摘要： An endless belt transports a recording medium through image forming sections and transfers toner images from corresponding ones of the image forming sections onto the recording medium. The endless belt has a surface resistivity and a volume resistivity. The surface resistivity and the volume resistivity are related such that 0.3 ≦(log ρ s−log ρ v)≦1.3 where ρ s is the surface resistivity in Ω/□ measured after a voltage of substantially 500 V is applied to the endless belt for ten seconds and ρ v is the volume resistivity in Ω·cm ten after a voltage of substantially 250 V is applied to the endless belt for ten seconds.

摘要翻译： 环形带通过图像形成部分传送记录介质，并将调色剂图像从对应的图像形成部分转印到记录介质上。 环形带具有表面电阻率和体积电阻率。 表面电阻率和体积电阻率相关，使得0.3 <=（log rho s-log rho v）<= 1.3其中rho是在基本上500V的电压之后测量的以Ω/□表示的表面电阻率施加到环形 皮带10秒钟，rho v是在大约250V的电压施加到环形带上十秒钟之后的体积电阻率（Ω·cm·cm）。

公开(公告)号：US08233119B2

公开(公告)日：2012-07-31

申请号：US12790063

申请日：2010-05-28

申请人： Jun Gotoh

发明人： Jun Gotoh

IPC分类号： G02F1/1337 ,  G02F1/1339

CPC分类号： G02F1/1337 ,  G02F1/133514 ,  G02F1/133516 ,  G02F2001/133388 ,  G02F2001/133519

摘要： There is provided a liquid crystal display device having color filters on a side of a TFT substrate, in which an orientation film is formed by inkjet printing. The formation of an orientation film by inkjet printing is more advantageous than the conventional flexographic printing in terms of the production cost. It is necessary, however, to reduce the viscosity of the orientation film to be applied by inkjet printing. For this reason, first and second orientation film stoppers are formed between a display area and a sealing portion in a TFT substrate, to prevent the orientation film from flowing to an end of the TFT substrate. The orientation film stoppers are formed by the overlapping of color filters. A profile of the orientation film is defined by the first orientation film stopper. The second orientation film stopper is formed to ensure that the orientation film does not flow to the outside.

摘要翻译： 在TFT基板的一侧设置有通过喷墨印刷形成取向膜的滤色器的液晶显示装置。 通过喷墨印刷形成取向膜在生产成本方面比常规柔版印刷更有利。 然而，有必要降低通过喷墨印刷施加的取向膜的粘度。 为此，在TFT基板的显示区域和密封部分之间形成第一和第二取向膜止动件，以防止取向膜流向TFT基板的一端。 取向膜止动器由滤色器的重叠形成。 取向膜的轮廓由第一取向膜止动件限定。 形成第二取向膜止动件以确保取向膜不流到外部。

公开(公告)号：US20110199551A1

公开(公告)日：2011-08-18

申请号：US13028339

申请日：2011-02-16

申请人： Taro Asai ,  Jun Gotoh ,  Eiji Oue ,  Hiroaki Asuma ,  Katsumi Nakayashiki ,  Makoto Kurita

发明人： Taro Asai ,  Jun Gotoh ,  Eiji Oue ,  Hiroaki Asuma ,  Katsumi Nakayashiki ,  Makoto Kurita

IPC分类号： G02F1/136 ,  H01L33/08 ,  H01J1/62

CPC分类号： G02F1/13306 ,  G02F1/136227 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/3248 ,  H01L27/3276 ,  H01L29/41733 ,  H01L29/78666 ,  H01L29/78675

摘要： A contact resistance in a through-hole with a source or a drain electrode connected to a TFT is decreased, thereby improving the operation efficiency of a display device.In the through-hole, a source portion of the TFT is connected to a source electrode 8. The source electrode 8 is formed of three layers comprising a barrier metal, an Al alloy 82, and a cap metal 83. The barrier metal is divided into a lower layer 81a in contact with the semiconductor layer and an upper layer 81b in contact with the Al alloy. The lower layer 81a of the barrier metal is formed by sputtering, the lower layer 81a is heat-treated and, subsequently, an upper layer 81b of the base metal, the Al alloy 82, and the cap metal 83 are formed continuously by sputtering. Since the upper layer 81b of the barrier metal in contact with the Al alloy 82 is not oxidized, increase in the contact resistance in the through-hole can be prevented.

摘要翻译： 与TFT连接的源极或漏极的通孔中的接触电阻降低，从而提高显示装置的操作效率。 在通孔中，TFT的源极部分连接到源电极8.源电极8由包括阻挡金属，Al合金82和帽金属83的三层形成。阻挡金属被分割 与半导体层接触的下层81a和与Al合金接触的上层81b。 通过溅射形成阻挡金属的下层81a，对下层81a进行热处理，然后通过溅射连续地形成基体金属，Al合金82和盖金属83的上层81b。 由于与Al合金82接触的阻挡金属的上层81b不被氧化，所以可以防止通孔中的接触电阻的增加。