公开(公告)号：US20050250273A1

公开(公告)日：2005-11-10

申请号：US11180658

申请日：2005-07-14

申请人： Yuichi Harano ,  Jun Gotoh ,  Toshiki Kaneko ,  Masanao Yamamoto

发明人： Yuichi Harano ,  Jun Gotoh ,  Toshiki Kaneko ,  Masanao Yamamoto

IPC分类号： G02F1/1368 ,  G09F9/30 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/768 ,  H01L21/77 ,  H01L23/52 ,  H01L29/417 ,  H01L29/45 ,  H01L29/786

CPC分类号： H01L21/28568 ,  G03G15/0131 ,  G03G15/1685 ,  G03G2215/0141 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76856 ,  H01L27/124 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/78603

摘要： The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of defective display can be obviated. An aluminum-based conductive layer is used in a source/drain electrode and a barrier layer made of molybdenum or a molybdenum alloy layer is formed between the aluminum-based conductive layer and a polysilicon layer. Further, a molybdenum oxide nitride film formed by the rapid heat treatment (rapid heat annealing) in a nitrogen atmosphere is formed over a surface of the molybdenum or the molybdenum alloy which constitutes the barrier layer.

公开(公告)号：US07479451B2

公开(公告)日：2009-01-20

申请号：US11180658

申请日：2005-07-14

申请人： Yuichi Harano ,  Jun Gotoh ,  Toshiki Kaneko ,  Masanao Yamamoto

发明人： Yuichi Harano ,  Jun Gotoh ,  Toshiki Kaneko ,  Masanao Yamamoto

IPC分类号： H01L21/44

CPC分类号： H01L21/28568 ,  G03G15/0131 ,  G03G15/1685 ,  G03G2215/0141 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76856 ,  H01L27/124 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/78603

摘要： The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of defective display can be obviated. An aluminum-based conductive layer is used in a source/drain electrode and a barrier layer made of molybdenum or a molybdenum alloy layer is formed between the aluminum-based conductive layer and a polysilicon layer. Further, a molybdenum oxide nitride film formed by the rapid heat treatment (rapid heat annealing) in a nitrogen atmosphere is formed over a surface of the molybdenum or the molybdenum alloy which constitutes the barrier layer.

摘要翻译： 本发明防止了在与低温多晶硅接触的源/漏电极中使用铝基导电层时，在加热步骤中铝元素扩散到多晶硅层中，从而可以发生不良显示 消除了 在源/漏电极中使用铝基导电层，并且在铝基导电层和多晶硅层之间形成由钼制成的阻挡层或钼合金层。 此外，在构成阻挡层的钼或钼合金的表面上形成在氮气氛中通过快速热处理（快速热退火）形成的氧化钼氮化物膜。

公开(公告)号：US20050249525A1

公开(公告)日：2005-11-10

申请号：US11180358

申请日：2005-07-13

申请人： Yuichi Harano ,  Jun Gotoh ,  Toshiki Kaneko ,  Masanao Yamamoto

发明人： Yuichi Harano ,  Jun Gotoh ,  Toshiki Kaneko ,  Masanao Yamamoto

IPC分类号： G02F1/1368 ,  G09F9/30 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/768 ,  H01L21/77 ,  H01L23/52 ,  H01L29/417 ,  H01L29/45 ,  H01L29/786 ,  G03G15/01

CPC分类号： H01L21/28568 ,  G03G15/0131 ,  G03G15/1685 ,  G03G2215/0141 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76856 ,  H01L27/124 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/78603

摘要： An endless belt transports a recording medium through image forming sections and transfers toner images from corresponding ones of the image forming sections onto the recording medium. The endless belt has a surface resistivity and a volume resistivity. The surface resistivity and the volume resistivity are related such that 0.3 ≦(log ρ s−log ρ v)≦1.3 where ρ s is the surface resistivity in Ω/□ measured after a voltage of substantially 500 V is applied to the endless belt for ten seconds and ρ v is the volume resistivity in Ω·cm ten after a voltage of substantially 250 V is applied to the endless belt for ten seconds.

摘要翻译： 环形带通过图像形成部分传送记录介质，并将调色剂图像从对应的图像形成部分转印到记录介质上。 环形带具有表面电阻率和体积电阻率。 表面电阻率和体积电阻率相关，使得0.3 <=（log rho s-log rho v）<= 1.3其中rho是在基本上500V的电压之后测量的以Ω/□表示的表面电阻率施加到环形 皮带10秒钟，rho v是在大约250V的电压施加到环形带上十秒钟之后的体积电阻率（Ω·cm·cm）。

公开(公告)号：US06933525B2

公开(公告)日：2005-08-23

申请号：US10742896

申请日：2003-12-23

申请人： Yuichi Harano ,  Jun Gotoh ,  Toshiki Kaneko ,  Masanao Yamamoto

发明人： Yuichi Harano ,  Jun Gotoh ,  Toshiki Kaneko ,  Masanao Yamamoto

IPC分类号： G02F1/1368 ,  G09F9/30 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/768 ,  H01L21/77 ,  H01L23/52 ,  H01L29/417 ,  H01L29/45 ,  H01L29/786 ,  H01L27/01

CPC分类号： H01L21/28568 ,  G03G15/0131 ,  G03G15/1685 ,  G03G2215/0141 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76856 ,  H01L27/124 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/78603

摘要： The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of defective display can be obviated. An aluminum-based conductive layer is used in a source/drain electrode and a barrier layer made of molybdenum or a molybdenum alloy layer is formed between the aluminum-based conductive layer and a polysilicon layer. Further, a molybdenum oxide nitride film formed by the rapid heat treatment (rapid heat annealing) in a nitrogen atmosphere is formed over a surface of the molybdenum or the molybdenum alloy which constitutes the barrier layer.

摘要翻译： 本发明防止了在与低温多晶硅接触的源/漏电极中使用铝基导电层时，在加热步骤中铝元素扩散到多晶硅层中，从而可以发生不良显示 消除了 在源/漏电极中使用铝基导电层，并且在铝基导电层和多晶硅层之间形成由钼制成的阻挡层或钼合金层。 此外，在构成阻挡层的钼或钼合金的表面上形成在氮气氛中通过快速热处理（快速热退火）形成的氧化钼氮化物膜。

公开(公告)号：US06433842B1

公开(公告)日：2002-08-13

申请号：US09537395

申请日：2000-03-29

申请人： Toshiki Kaneko ,  Masaru Takabatake ,  Takahiro Ochiai ,  Takuya Takahashi ,  Katsumi Tamura ,  Kenichi Onisawa ,  Kenichi Cyahara ,  Masatomo Terakado ,  Yuichi Harano ,  Hideaki Yamamoto

发明人： Toshiki Kaneko ,  Masaru Takabatake ,  Takahiro Ochiai ,  Takuya Takahashi ,  Katsumi Tamura ,  Kenichi Onisawa ,  Kenichi Cyahara ,  Masatomo Terakado ,  Yuichi Harano ,  Hideaki Yamamoto

IPC分类号： G02F1136

CPC分类号： G02F1/136286 ,  G02F2001/13629

摘要： The method of fabrication of a liquid crystal display device includes the steps of: forming a metal thin film on a glass substrate; forming a resist pattern on the metal thin film by photolithography; and wet-etching the metal thin film with an etchant formed of a mixture including phosphoric acid, nitric acid in a range between 7 mol % and 12 mol % inclusive, and at least one of ammonium fluoride and hydrogen fluoride in a trace amount of about 0.01 to 0.1 mol %.

摘要翻译： 制造液晶显示装置的方法包括以下步骤：在玻璃基板上形成金属薄膜; 通过光刻在金属薄膜上形成抗蚀剂图案; 并用由包括磷酸，硝酸在7摩尔％至12摩尔％之间的混合物的混合物形成的蚀刻剂湿蚀刻金属薄膜，以及微量约为的氟化铵和氟化氢中的至少一种 0.01〜0.1摩尔％。

公开(公告)号：US08873006B2

公开(公告)日：2014-10-28

申请号：US13407137

申请日：2012-02-28

申请人： Noboru Kunimatsu ,  Masaki Matsumori ,  Hidehiro Sonoda ,  Yasushi Tomioka ,  Toshiki Kaneko

发明人： Noboru Kunimatsu ,  Masaki Matsumori ,  Hidehiro Sonoda ,  Yasushi Tomioka ,  Toshiki Kaneko

IPC分类号： G02F1/1337 ,  G02F1/1339 ,  G02F1/1333

CPC分类号： G02F1/1337 ,  G02F1/1333 ,  G02F1/133345 ,  G02F1/133723 ,  G02F1/13378 ,  G02F1/133788 ,  G02F1/1339 ,  G02F1/13394 ,  G02F1/136286 ,  G02F1/1368

摘要： The present invention prevents the shaving of an alignment film caused by a columnar spacer in a liquid crystal display device of an IPS method using photo-alignment. A plinth higher than a pixel electrode is formed at a part where a columnar spacer formed over a counter substrate touches a TFT substrate. When an alignment film of a double-layered structure is applied over the pixel electrode and the plinth, the thickness of the alignment film over the plinth reduces by a leveling effect. When photo-alignment is applied in the state, a photodegraded upper alignment film over the plinth disappears and a lower alignment film having a high mechanical strength remains. As a result, it is possible to prevent the shaving of the alignment film.

摘要翻译： 本发明防止了使用光取向的IPS方法的液晶显示装置中的柱状间隔物引起的取向膜的刮削。 在对置基板上形成的柱状间隔件与TFT基板接触的部分，形成比像素电极高的底座。 当在像素电极和底座上施加双层结构的取向膜时，底座上的取向膜的厚度减小了平整效应。 当在该状态下进行光对准时，在底座上的光降解的上取向膜消失，并且残留有机械强度较高的下取向膜。 结果，可以防止取向膜的刮削。

公开(公告)号：US08377765B2

公开(公告)日：2013-02-19

申请号：US13067281

申请日：2011-05-20

申请人： Hideo Tanabe ,  Masaru Takabatake ,  Toshiki Kaneko ,  Atsushi Hasegawa ,  Hiroko Sehata

发明人： Hideo Tanabe ,  Masaru Takabatake ,  Toshiki Kaneko ,  Atsushi Hasegawa ,  Hiroko Sehata

IPC分类号： H01L21/00

CPC分类号： G02F1/133345 ,  G02F1/133305 ,  G02F1/133504 ,  G02F1/133555 ,  G02F1/134363 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/78675

摘要： The present invention provides a liquid crystal display device having a large holding capacitance in the inside of a pixel. A liquid crystal display device includes a first substrate, a second substrate arranged to face the first substrate in an opposed manner, and liquid crystal sandwiched between the first substrate and the second substrate. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode thereof connected to the video signal line and a second electrode thereof connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film formed above the first silicon nitride film, a capacitance electrode formed above the organic insulation film, and a second silicon nitride film formed above the capacitance electrode and below the pixel electrode. The second silicon nitride film is a film which is formed at a temperature lower than a forming temperature of the first silicon nitride film. The first silicon nitride film and the second silicon nitride film form a contact hole therein by etching both of the first silicon nitride film and the second silicon nitride film collectively by dry etching. The second electrode and the pixel electrode are connected to each other via the contact hole. A potential different from a potential applied to the pixel electrode is applied to the capacitance electrode, and a holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.

摘要翻译： 本发明提供一种在像素内部具有大的保持电容的液晶显示装置。 液晶显示装置包括第一基板，以相对的方式与第一基板相对地布置的第二基板和夹在第一基板和第二基板之间的液晶。 第一基板包括视频信号线，像素电极，具有连接到视频信号线的第一电极的薄膜晶体管和连接到像素电极的第二电极，形成在第二电极上方的第一氮化硅膜， 形成在第一氮化硅膜上方的有机绝缘膜，形成在有机绝缘膜上方的电容电极和形成在电容电极上方和像素电极下方的第二氮化硅膜。 第二氮化硅膜是在低于第一氮化硅膜的形成温度的温度下形成的膜。 第一氮化硅膜和第二氮化硅膜通过干法蚀刻同时蚀刻第一氮化硅膜和第二氮化硅膜两者而形成接触孔。 第二电极和像素电极经由接触孔相互连接。 将施加到像素电极的电位不同的电位施加到电容电极，并且由像素电极，第二氮化硅膜和电容电极形成保持电容。

公开(公告)号：US20120299028A1

公开(公告)日：2012-11-29

申请号：US13568672

申请日：2012-08-07

申请人： Hideo TANABE ,  Masaru Takabatake ,  Toshiki Kaneko ,  Atsushi Hasegawa ,  Hiroko Sehata

发明人： Hideo TANABE ,  Masaru Takabatake ,  Toshiki Kaneko ,  Atsushi Hasegawa ,  Hiroko Sehata

IPC分类号： H01L33/62

CPC分类号： G02F1/133345 ,  G02F1/133305 ,  G02F1/133504 ,  G02F1/133555 ,  G02F1/134363 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/78675

摘要： A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.

摘要翻译： 具有大像素保持电容的LCD装置包括相对的第一和第二基板以及它们之间的液晶。 第一基板包括视频信号线，像素电极，具有连接到视频信号线的第一电极的薄膜晶体管和连接到像素电极的第二电极，形成在第二电极上方的第一氮化硅膜，有机物 第一氮化硅膜上方的绝缘膜，有机绝缘膜上方的电容电极，以及电容电极上方和像素电极下方的第二氮化硅膜。 在第一和第二氮化硅膜中蚀刻的接触孔将第二电极和像素电极彼此连接。 保持电容由像素电极，第二氮化硅膜和电容电极形成。

公开(公告)号：US20110227083A1

公开(公告)日：2011-09-22

申请号：US13067281

申请日：2011-05-20

申请人： Hideo Tanabe ,  Masaru Takabatake ,  Toshiki Kaneko ,  Atsushi Hasegawa ,  Hiroko Sehata

发明人： Hideo Tanabe ,  Masaru Takabatake ,  Toshiki Kaneko ,  Atsushi Hasegawa ,  Hiroko Sehata

IPC分类号： H01L33/16

CPC分类号： G02F1/133345 ,  G02F1/133305 ,  G02F1/133504 ,  G02F1/133555 ,  G02F1/134363 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/78675

摘要： The present invention provides a liquid crystal display device having a large holding capacitance in the inside of a pixel. A liquid crystal display device includes a first substrate, a second substrate arranged to face the first substrate in an opposed manner, and liquid crystal sandwiched between the first substrate and the second substrate. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode thereof connected to the video signal line and a second electrode thereof connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film formed above the first silicon nitride film, a capacitance electrode formed above the organic insulation film, and a second silicon nitride film formed above the capacitance electrode and below the pixel electrode. The second silicon nitride film is a film which is formed at a temperature lower than a forming temperature of the first silicon nitride film. The first silicon nitride film and the second silicon nitride film form a contact hole therein by etching both of the first silicon nitride film and the second silicon nitride film collectively by dry etching. The second electrode and the pixel electrode are connected to each other via the contact hole. A potential different from a potential applied to the pixel electrode is applied to the capacitance electrode, and a holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.

公开(公告)号：US07289181B2

公开(公告)日：2007-10-30

申请号：US11516155

申请日：2006-09-05

申请人： Toshiki Kaneko ,  Kazumi Fujii ,  Kikuo Ono

发明人： Toshiki Kaneko ,  Kazumi Fujii ,  Kikuo Ono

IPC分类号： G02F1/1343 ,  G02F1/136

CPC分类号： G02F1/134363 ,  G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  G02F2201/123 ,  G02F2203/01

摘要： An interconnecting structure and a pixel structure suited to large-sized screens are formed. A counter line/electrode is formed on a TFT substrate, and the counter line/electrode is made of a stacked structure film in which a layer made of aluminum or an alloy essentially containing aluminum is covered with a high-melting point metal film, and a transparent conductive film which covers the stacked structure film.

摘要翻译： 形成适合于大尺寸屏幕的互连结构和像素结构。 反向线/电极形成在TFT基板上，对向线/电极由叠层结构膜制成，其中由铝或基本上含有铝的合金构成的层被高熔点金属膜覆盖，并且 覆盖层叠结构膜的透明导电膜。