摘要:
The present invention relates to a method for inspecting a crack in a metal surface or the like, and, particularly, to an inspection method and apparatus for nondestructive inspection such as liquid penetrant inspection and magnetic particle testing. The present invention provides a flaw inspection method that essentially comprises the steps of illuminating a surface of a sample to be inspected, obtaining an image of the surface, characterizing a potential flaw on the inspected surface by processing the obtained image, displaying an image of the potential flaw, verifying that the potential flaw is a true flaw, and storing an image of the verified flaw in memory.
摘要:
A detected pattern is binarized, the binarized pattern is expanded, an image size is reduced while a connectivity of the expanded pattern is preserved and stored in a first memory. In turn, the binarized pattern is contracted, the image size is reduced while a connectivity of the contracted pattern is preserved and stored in a second memory. Then the expanded pattern is read out from the first memory and a connectivity of the pattern is selected. The contracted pattern is read out from the second pattern and the connectivity of the pattern is extracted. The selected connectivities are compared with the connectivity of a normal pattern to detect a non-coincidence. The circuit pattern having a short circuit or a semi-short circuit defect and a circuit pattern having an open circuit or a semi-open circuit defect are classified and selected in response to these non-coincidences. Further, a pattern shape stored in the first memory is analyzed to specify the position where the short circuit or a semi-short circuit defect is present.
摘要:
A displacement measurement method, an apparatus thereof, and a probe microscope. which enable stable measure an amount of displacement and a moving distance of an object under measurement with an accuracy of the sub-nanometer order or below without being affected by disturbances such as fluctuations of air and mechanical vibration. A pulsed beam is split into two; one beam is reflected by an object under measurement and then inputted to a delay optical path equivalent to one pulse period; and the other beam is sent through the same delay optical path in the opposite direction up to the object under measurement with a delay of one pulse period, and then reflected by the object under measurement. An optical phase variation caused by the movement of the object under measurement is obtained by subjecting the two pulsed beams to interference.
摘要:
The present invention provides a displacement measurement method, an apparatus thereof, a probe microscope. which make it possible to stably measure an amount of displacement and a moving distance of an object under measurement with an accuracy of the sub-nanometer order or below without being affected by disturbances such as fluctuations of air, mechanical vibration.Specifically, with the present invention, a pulsed beam is split into two; one beam is reflected by an object under measurement and then inputted to a delay optical path equivalent to one pulse period; and the other beam is sent through the same delay optical path in the opposite direction up to the object under measurement with a delay of one pulse period, and then reflected by the object under measurement. Then, an optical phase variation caused by the movement of the object under measurement is obtained by subjecting the two pulsed beams to interference.
摘要:
A TFT device having a pixel portion and a driving circuit portion formed on a glass substrate; wherein at least the active layer (active region) of a transistor constituting said driving circuit comprises polycrystalline silicon including crystals that do not have crystal grain boundaries which cross the direction of current flow.
摘要:
A method for manufacturing a plasma display comprises: a phosphor painting process for painting phosphor layer in ribs formed on a back plate; and a phosphor inspection process that includes the steps of: irradiating the phosphor layer with ultraviolet light; preparing an imaging system so that the imaging system images the emitted light beam to acquire information on brightness; comparing the brightness information with correlation between a shape model of the phosphor layer and brightness signal information that have been obtained in advance; and obtaining a painted state of the phosphor layer painted in the ribs; and a process for feeding back the applied state of the phosphor layer, which has been obtained in the phosphor inspection process, to the phosphor painting process so that the manufacturing equipment is controlled in the phosphor painting process.
摘要:
A manufacturing method and manufacturing device for high-precision thin film devices is disclosed, whereby the film thickness and film thickness distribution of a transparent film is measured to a high degree of accuracy during a CMP process without being affected by the film thickness distribution between LSI regions or within the semiconductor wafer surface generated by CMP processing. Film thickness is measured by specifying relatively level measurement regions, according to a characteristic quantity of the spectral waveform of the reflected light from the transparent film, such as the reflection intensity, frequency spectrum intensity, or the like, thereby permitting highly accurate control of film thickness. The leveling process in CMP processing can be optimized on the basis of the film thickness distribution. The film deposition conditions in the film deposition stage and the etching conditions in the etching stage can also be optimized. Accordingly, a high-precision semiconductor device can be manufactured.
摘要:
Laser sources output laser lights L1 and L2 having different wavelengths so as to increase an accuracy of an endpoint detection of polishing processing by enabling an accurate detection of a film thickness of a layer insulating film on a surface of a wafer to be polished by the CMP processing, the lights are emitted from a detection window via a beam splitter to the layer insulating film formed on the surface of the wafer to be polished by a pad, different optical detectors detect interference lights corresponding to the laser lights L1 and L2 reflected and generated from a surface of the layer insulating film and a pattern under the surface via the detection window, the beam splitter, and a dichroic mirror, the detection results are supplied to a film thickness evaluation unit 7, a film thickness of the layer insulation film is detected on the basis of a relationship between intensities of the reflected interference lights to the laser lights L1 and L2 or the intensity ratio, and an endpoint of polishing processing is determined when the film thickness is equal to a predetermined value.
摘要:
In order to detect a local shape defect on an inner surface of an ordinary plane member with a high degree of accuracy as a state distinguished from a big waviness deformation, a surface-shape-defect inspecting method and apparatus for identifying the shape defect on the inner surface of the plane member is provided. The method and apparatus provides for scanning optically the entire area of the plane member, extracting a shape of the surface of the plane member as absolute height displacement data at scanning positions, finding a difference between a reference surface shape inferred from the extracted shape of the surface of the plane member and the shape of the surface, and using the difference as relative height displacement data with respect to the reference surface shape, and detecting the shape defect on the surface by identifying the location of the shape defect through comparison of the relative height displacement data with predetermined allowable displacement.
摘要:
In a displacement measurement apparatus using light interference, a probe light path is spatially separated from a reference light path. Therefore, when a temperature or refractive index distribution by a fluctuation of air or the like, or a mechanical vibration is generated, an optical path difference fluctuates between both of the optical paths, and a measurement error is generated. In the solution, an optical axis of probe light is brought close to that of reference light by a distance which is not influenced by any disturbance, a sample is irradiated with the probe light, a reference surface is irradiated with the reference light, reflected light beams are allowed to interfere with each other, and a displacement of the sample is obtained from the resultant interference light to thereby prevent the measurement error from being generated by the fluctuation of the optical path difference.