公开(公告)号：US20080074273A1

公开(公告)日：2008-03-27

申请号：US11902387

申请日：2007-09-21

申请人： Yuta Endo ,  Noriaki Uto ,  Satohiro Okamoto

发明人： Yuta Endo ,  Noriaki Uto ,  Satohiro Okamoto

IPC分类号： G08B13/14

CPC分类号： G08G1/017 ,  G06K17/0022 ,  G06K19/07749 ,  G08G1/052 ,  H04B5/0056

摘要： An RFID tag having a memory portion for holding information on a wheeled vehicle is mounted on the wheeled vehicle, and an external interrogator and the RFID tag exchange information with each other. Further, an RFID tag having a memory portion for holding information on a wheeled vehicle and a communication device for exchanging information with the RFID tag are set on the wheeled vehicle. When the external interrogator and the RFID tag exchange information with each other, the communication device holds information of a situation, for example, speed information, information on date and time, and the like in the memory portion in the RFID tag.

摘要翻译： 具有用于在轮式车辆上保持信息的存储部分的RFID标签安装在轮式车辆上，并且外部询问器和RFID标签彼此交换信息。 此外，具有用于保持轮式车辆上的信息的存储部分和用于与RFID标签交换信息的通信装置的RFID标签设置在轮式车辆上。 当外部询问器和RFID标签彼此交换信息时，通信装置将RFID信息的存储部分中的信息，例如速度信息，日期和时间信息等信息保存。

公开(公告)号：US09691772B2

公开(公告)日：2017-06-27

申请号：US13402194

申请日：2012-02-22

申请人： Kosei Noda ,  Yuta Endo

发明人： Kosei Noda ,  Yuta Endo

IPC分类号： H01L29/786 ,  H01L27/108 ,  H01L21/02 ,  H01L27/12 ,  H01L29/423

CPC分类号： H01L27/10873 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/10805 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/7869 ,  H01L29/78696

摘要： A semiconductor memory device includes a transistor and a capacitor. The transistor includes: an insulating film in which a groove portion is provided; a pair of electrodes separated so that the groove portion is sandwiched therebetween; an oxide semiconductor film which is in contact with the pair of electrodes and side surfaces and a bottom surface of the groove portion and has a thickness value smaller than a depth value of the groove portion; a gate insulating film covering the oxide semiconductor film; and a gate electrode provided to overlap with the oxide semiconductor film with the gate insulating film positioned therebetween.

公开(公告)号：US08853684B2

公开(公告)日：2014-10-07

申请号：US13109594

申请日：2011-05-17

申请人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Mizuho Sato ,  Mitsuhiro Ichijo ,  Toshiya Endo

发明人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Mizuho Sato ,  Mitsuhiro Ichijo ,  Toshiya Endo

IPC分类号： H01L29/04 ,  H01L29/786 ,  H01L29/49

CPC分类号： H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

摘要： In a transistor having a top-gate structure in which a gate electrode layer overlaps with an oxide semiconductor layer which forms a channel region with a gate insulating layer interposed therebetween, when a large amount of hydrogen is contained in the insulating layer, hydrogen is diffused into the oxide semiconductor layer because the insulating layer is in contact with the oxide semiconductor layer; thus, electric characteristics of the transistor are degraded. An object is to provide a semiconductor device having favorable electric characteristics. An insulating layer in which the concentration of hydrogen is less than 6×1020 atoms/cm3 is used for the insulating layer being in contact with oxide semiconductor layer which forms the channel region. Using the insulating layer, diffusion of hydrogen can be prevented and a semiconductor device having favorable electric characteristics can be provided.

摘要翻译： 在具有栅极结构的晶体管中，栅电极层与形成沟道区的氧化物半导体层重叠，栅极绝缘层介于其间，当绝缘层中含有大量的氢时，氢扩散 由于绝缘层与氧化物半导体层接触，所以进入氧化物半导体层; 因此，晶体管的电特性降低。 本发明的目的是提供一种具有良好电特性的半导体器件。 与形成沟道区域的氧化物半导体层接触的绝缘层使用其氢浓度小于6×1020原子/ cm3的绝缘层。 使用绝缘层，可以防止氢的扩散，并且可以提供具有良好电特性的半导体器件。

公开(公告)号：US08476719B2

公开(公告)日：2013-07-02

申请号：US13110241

申请日：2011-05-18

申请人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Mizuho Sato

发明人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Mizuho Sato

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606

摘要： Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.

摘要翻译： 氧从绝缘层释放，由此可以减少氧化物半导体层中的氧缺乏和绝缘层与氧化物半导体层之间的界面状态。 因此，可以制造可靠性高，电特性变化小的半导体装置。

公开(公告)号：US08956944B2

公开(公告)日：2015-02-17

申请号：US13422247

申请日：2012-03-16

申请人： Yuki Imoto ,  Tetsunori Maruyama ,  Yuta Endo

发明人： Yuki Imoto ,  Tetsunori Maruyama ,  Yuta Endo

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/7869 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

摘要： In the transistor including an oxide semiconductor film, which includes a film for capturing hydrogen from the oxide semiconductor film (a hydrogen capture film) and a film for diffusing hydrogen (a hydrogen permeable film), hydrogen is transferred from the oxide semiconductor film to the hydrogen capture film through the hydrogen permeable film by heat treatment. Specifically, a base film or a protective film of the transistor including an oxide semiconductor film has a stacked-layer structure of the hydrogen capture film and the hydrogen permeable film. At this time, the hydrogen permeable film is formed on a side which is in contact with the oxide semiconductor film. After that, hydrogen released from the oxide semiconductor film is transferred to the hydrogen capture film through the hydrogen permeable film by the heat treatment.

摘要翻译： 在包括氧化物半导体膜的晶体管中，其包括用于从氧化物半导体膜（氢捕获膜）捕获氢的膜和用于扩散氢的膜（氢可渗透膜），氢从氧化物半导体膜转移到 通过热处理通过氢气渗透膜的氢捕获膜。 具体地，包含氧化物半导体膜的晶体管的基膜或保护膜具有氢捕获膜和氢可渗透膜的堆叠层结构。 此时，氢氧渗透膜形成在与氧化物半导体膜接触的一侧。 之后，通过热处理从氧化物半导体膜释放的氢气通过氢可渗透膜转移到氢捕获膜。

公开(公告)号：US08785933B2

公开(公告)日：2014-07-22

申请号：US13402938

申请日：2012-02-23

申请人： Yuta Endo

发明人： Yuta Endo

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1288

摘要： A semiconductor device of the present invention includes a gate electrode which includes a pair of first protrusions and a second protrusion provided between the pair of first protrusions; a gate insulating film covering the gate electrode; a semiconductor film which is in contact with the gate insulating film and overlaps with the pair of first protrusions and the second protrusion; and a pair of electrodes which is in contact with the semiconductor film and overlaps with the pair of first protrusions. The side edges of the semiconductor film are on the outer sides than the top surfaces of the pair of first protrusions in the direction of the channel width of the semiconductor film. The side edges of the pair of electrodes are on the outer sides than the top surfaces of the pair of first protrusions in the direction of the channel width of the semiconductor film.

摘要翻译： 本发明的半导体器件包括：栅电极，其包括一对第一突起和设置在所述一对第一突起之间的第二突起; 覆盖栅电极的栅极绝缘膜; 半导体膜，其与所述栅极绝缘膜接触并且与所述一对第一突起和所述第二突起重叠; 以及与半导体膜接触并且与一对第一突起重叠的一对电极。 半导体膜的侧边缘在半导体膜的沟道宽度方向上位于一对第一突起的顶表面的外侧。 一对电极的侧边缘在半导体膜的沟道宽度方向上在一对第一突起的顶表面的外侧。

公开(公告)号：US08748889B2

公开(公告)日：2014-06-10

申请号：US13188992

申请日：2011-07-22

申请人： Toshinari Sasaki ,  Hitomi Sato ,  Kosei Noda ,  Yuta Endo ,  Mizuho Ikarashi ,  Keitaro Imai ,  Atsuo Isobe ,  Yutaka Okazaki

发明人： Toshinari Sasaki ,  Hitomi Sato ,  Kosei Noda ,  Yuta Endo ,  Mizuho Ikarashi ,  Keitaro Imai ,  Atsuo Isobe ,  Yutaka Okazaki

IPC分类号： H01L29/12 ,  H01L21/36

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

摘要： It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer.

摘要翻译： 本发明的目的是制造其中包括氧化物半导体的晶体管具有常态特性，电特性波动小，可靠性高的半导体器件。 首先，在基板上进行第一热处理，在基板上形成基极绝缘层，在基底绝缘层上形成氧化物半导体层，对形成氧化物半导体的工序进行第一热处理的工序 在不暴露于空气的情况下执行层。 接下来，在形成氧化物半导体层之后，进行第二热处理。 使用通过加热而释放氧的绝缘层作为基底绝缘层。

公开(公告)号：US08709920B2

公开(公告)日：2014-04-29

申请号：US13397839

申请日：2012-02-16

申请人： Yuta Endo ,  Kosei Noda

发明人： Yuta Endo ,  Kosei Noda

IPC分类号： H01L21/20

CPC分类号： H01L27/1156 ,  G11C11/403 ,  G11C11/404 ,  H01L21/84 ,  H01L27/10873 ,  H01L27/1203 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/7869

摘要： A method for forming a U-shaped vertically long groove in a region where a channel portion of a transistor is formed to make a channel length longer than an apparent channel length additionally requires a photolithography process for forming a groove; therefore, it has a problem in terms of costs and yield. By forming a three-dimensional channel region with the use of a gate electrode or a structure having an insulating surface, a channel length is made three times or more, preferably five times or more, further preferably ten times or more as long as a channel length when seen from the above.

摘要翻译： 在形成沟道部分以形成沟道长度比表观沟道长度更长的区域中形成U形垂直长沟槽的方法另外需要用于形成沟槽的光刻工艺; 因此，在成本和产量方面存在问题。 通过使用栅电极或具有绝缘表面的结构形成三维沟道区，沟道长度为沟道长度的3倍以上，优选为沟道长度的5倍以上，更优选为10倍以上 从上面看的长度。

公开(公告)号：US20120018727A1

公开(公告)日：2012-01-26

申请号：US13185779

申请日：2011-07-19

申请人： Yuta Endo ,  Kosei Noda ,  Toshinari Sasaki

发明人： Yuta Endo ,  Kosei Noda ,  Toshinari Sasaki

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/66969 ,  H01L21/02164 ,  H01L21/02367 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/7869

摘要： An insulating layer which releases a large amount of oxygen is used as an insulating layer in contact with a channel region of an oxide semiconductor layer, and an insulating layer which releases a small amount of oxygen is used as an insulating layer in contact with a source region and a drain region of the oxide semiconductor layer. By releasing oxygen from the insulating layer which releases a large amount of oxygen, oxygen deficiency in the channel region and an interface state density between the insulating layer and the channel region can be reduced, so that a highly reliable semiconductor device having small variation in electrical characteristics can be manufactured. The source region and the drain region are provided in contact with the insulating layer which releases a small amount of oxygen, thereby suppressing the increase of the resistance of the source region and the drain region.

摘要翻译： 使用释放大量氧的绝缘层作为与氧化物半导体层的沟道区域接触的绝缘层，并且使用释放少量氧的绝缘层作为与源极接触的绝缘层 区域和氧化物半导体层的漏极区域。 通过从释放大量氧的绝缘层释放氧气，可以减少沟道区域中的氧缺乏以及绝缘层和沟道区域之间的界面态密度，从而可以降低电子变化小的高度可靠的半导体器件 特性可以制造。 源极区域和漏极区域设置成与释放少量氧气的绝缘层接触，从而抑制源极区域和漏极区域的电阻的增加。

公开(公告)号：US08093136B2

公开(公告)日：2012-01-10

申请号：US12340869

申请日：2008-12-22

申请人： Yuta Endo ,  Shunpei Yamazaki

发明人： Yuta Endo ,  Shunpei Yamazaki

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254

摘要： A single crystal semiconductor substrate and a base substrate are prepared; a first insulating film is formed over the single crystal semiconductor substrate; a separation layer is formed by introducing ions at a predetermined depth through a surface of the single crystal semiconductor substrate; plasma treatment is performed on the base substrate so as to planarize a surface of the base substrate; a second insulating film is formed over the planarized base substrate; a surface of the first insulating film is bonded to a surface of the second insulating film by making the surface of the single crystal semiconductor substrate and the surface of the base substrate face each other; and a single crystal semiconductor film is provided over the base substrate with the second insulating film and the first insulating film interposed therebetween by performing separation at the separation layer.

摘要翻译： 制备单晶半导体衬底和基底衬底; 在单晶半导体衬底上形成第一绝缘膜; 通过在单晶半导体衬底的表面上以预定深度引入离子形成分离层; 在基底基板上进行等离子体处理，使基板的表面平坦化; 在平坦化的基底基板上形成第二绝缘膜; 通过使单晶半导体衬底的表面和基底表面彼此面对，将第一绝缘膜的表面接合到第二绝缘膜的表面; 并且通过在分离层进行分离，在基底基板上设置有第二绝缘膜和第一绝缘膜之间的单晶半导体膜。