公开(公告)号：US20130225115A1

公开(公告)日：2013-08-29

申请号：US13879832

申请日：2012-06-26

申请人： Makoto Sasaki ,  Hiroki Shikama ,  Takeshi Higuchi

发明人： Makoto Sasaki ,  Hiroki Shikama ,  Takeshi Higuchi

IPC分类号： H04H60/70 ,  H04H20/59

CPC分类号： H04H60/70 ,  G08B27/00 ,  G08B27/006 ,  H04H20/59 ,  H04M1/72536 ,  H04M3/5166 ,  H04M11/04 ,  H04W4/021 ,  H04W4/06 ,  H04W4/90 ,  H04W64/006

摘要： A communication terminal includes a receiver for receiving a communication signal including urgent warning information, a current location information retrieving unit that retrieves location information regarding a current location of a user, a storage unit that stores information regarding a registered point specified by the user or a communication system, a processing unit that calculates a distance between the current location and the registered point, in response to receiving by the receiving unit of the communication signal, and an information providing unit that provides to-be-provided information including, at least, the distance to the user.

摘要翻译： 通信终端包括用于接收包括紧急警告信息的通信信号的接收器，检索关于用户的当前位置的位置信息的当前位置信息检索单元，存储关于用户指定的注册点的信息的存储单元或 通信系统，响应于所述接收单元接收到所述通信信号而计算当前位置和所述注册点之间的距离的处理单元，以及提供所提供的信息的信息提供单元，所述信息提供单元至少包括： 到用户的距离。

公开(公告)号：US08427737B2

公开(公告)日：2013-04-23

申请号：US13187333

申请日：2011-07-20

申请人： Motohiko Yoshida ,  Makoto Sasaki

发明人： Motohiko Yoshida ,  Makoto Sasaki

IPC分类号： G02B26/00 ,  G09G3/34

CPC分类号： G02F1/167

摘要： An electrophoretic display device includes: a first substrate and a second substrate which are arranged opposite to each other at a predetermined interval; a plurality of pixel electrodes which are aligned on the first substrate; a wiring which is arranged between adjacent pixel electrodes among the pixel electrodes; an opposite electrode which is provided on the second substrate; a partition wall which is provided above the wiring of the first substrate to stand toward the second substrate so as to surround the pixel electrodes; and a solvent which fills up a space surrounded by the partition wall and in which a plurality of particles are dispersed. The partition wall has a rectangular shape including four sides, at least one of which partially has an expanded-width portion wider than other portion of the at least one of the four sides.

摘要翻译： 电泳显示装置包括：以预定间隔彼此相对布置的第一基板和第二基板; 在第一基板上排列的多个像素电极; 布置在像素电极之间的相邻像素电极之间的布线; 设置在所述第二基板上的相对电极; 分隔壁，设置在第一基板的布线的上方以朝向第二基板以围绕像素电极; 以及填充由分隔壁包围的空间并且分散有多个颗粒的溶剂。 分隔壁具有包括四个侧面的矩形形状，其中至少一个部分地具有比四个侧面中的至少一个的其它部分更宽的扩宽部分。

公开(公告)号：US20130070643A1

公开(公告)日：2013-03-21

申请号：US13700648

申请日：2012-01-12

申请人： Satoshi Udou ,  Kazuhiko Korai ,  Masahiro Asao ,  Makoto Sasaki

发明人： Satoshi Udou ,  Kazuhiko Korai ,  Masahiro Asao ,  Makoto Sasaki

IPC分类号： H04L12/24

CPC分类号： H04L41/12 ,  G06F3/04817 ,  G06F3/0484 ,  G06F3/04847 ,  H04L41/00 ,  H04L41/145 ,  H04L41/20 ,  H04L41/22

摘要： To support selection of a communication system of a network applied to an FA system of a user, a network selection supporting method according to an embodiment of the present invention includes a condition displaying step of displaying, on a condition input screen, one or a plurality of selection conditions set in advance related to the communication system of the network applied to the FA system, a condition receiving step of receiving an input of a selection condition desired by the user among the selection conditions displayed on the condition input screen, a communication system searching step of searching through a communication system database and finding a communication system matching the input selection condition, and a communication system list displaying step of displaying a search result of the communication system on the communication system list display screen as a list.

摘要翻译： 为了支持对应用于用户的FA系统的网络的通信系统的选择，根据本发明实施例的网络选择支持方法包括条件显示步骤，在条件输入画面上显示一个或多个 预先设置的与应用于FA系统的网络的通信系统有关的选择条件;条件接收步骤，在条件输入画面上显示的选择条件中接收用户期望的选择条件的输入，通信系统 搜索通过通信系统数据库搜索并找到与输入选择条件相匹配的通信系统的搜索步骤，以及在通信系统列表显示屏幕上显示通信系统的搜索结果的通信系统列表显示步骤作为列表。

公开(公告)号：US20130068157A1

公开(公告)日：2013-03-21

申请号：US13606529

申请日：2012-09-07

申请人： Makoto Sasaki ,  Tsutomu Hori

发明人： Makoto Sasaki ,  Tsutomu Hori

IPC分类号： C30B23/00 ,  C23C14/06

CPC分类号： C23C14/0635 ,  C23C14/24 ,  C30B23/00 ,  C30B29/36

摘要： A method of manufacturing silicon carbide crystal includes the steps of forming silicon carbide crystal on a main surface of a base composed of carbon and removing the base from silicon carbide crystal by oxidizing carbon. According to the manufacturing method, by gasifying the base integrated with the silicon carbide crystal by oxidizing carbon forming the base, the base is removed from the silicon carbide crystal. Therefore, since it is not necessary to apply physical force to the silicon carbide crystal or the base for separating them from each other, occurrence of a defect involved with removal of the base can be suppressed. Therefore, high-quality silicon carbide crystal having fewer defects can be manufactured.

摘要翻译： 制造碳化硅晶体的方法包括以下步骤：在由碳组成的基底的主表面上形成碳化硅晶体，并通过氧化碳从碳化硅晶体上除去碱。 根据该制造方法，通过使形成基体的碳进行氧化，使与碳化硅晶体一体化的基体气化，从碳化硅晶体除去基体。 因此，由于不需要对碳化硅晶体或将它们分离的基体施加物理力，因此可以抑制与基体的去除有关的缺陷的发生。 因此，可以制造具有较少缺陷的高质量碳化硅晶体。

公开(公告)号：US08385636B2

公开(公告)日：2013-02-26

申请号：US12510684

申请日：2009-07-28

申请人： Makoto Sasaki

发明人： Makoto Sasaki

IPC分类号： G06K9/00

CPC分类号： H04N1/54

摘要： A color processing method includes setting a color gamut constituted by combinations of values of M color components, wherein each combination has a minimum total sum of the values of the M color components among combinations that provide a corresponding one of target colors, and each combination meets a predetermined limitation; obtaining output color signals each having values of the M color components by controlling, within a range meeting the predetermined limit, combinations each providing any of colors within the set color gamut; and generating pairs each having a corresponding one of the output color signals and an input color signal which is in an input color space, corresponds to the corresponding one of the output color signals, represents a color within the set color gamut, and has values of N color components as elements where N is an integer smaller than M.

摘要翻译： 颜色处理方法包括设置由M个颜色分量的值的组合构成的色域，其中每个组合具有提供相应一个目标颜色的组合中的M个颜色分量的值的最小总和，并且每个组合满足 预定限制; 通过在满足预定限度的范围内，通过在设置的色域内提供任何颜色的组合来控制每个具有M个颜色分量的值的输出颜色信号; 并且生成各自具有输出颜色信号中的相应一个和输入颜色空间中的输入颜色信号的对应于输出颜色信号中的相应一个，表示设置色域内的颜色，并且具有 N个颜色分量作为元素，其中N是小于M的整数。

公开(公告)号：US20120315427A1

公开(公告)日：2012-12-13

申请号：US13473936

申请日：2012-05-17

申请人： Tsutomu HORI ,  Makoto Sasaki ,  Taro Nishiguchi ,  Shinsuke Fujiwara

发明人： Tsutomu HORI ,  Makoto Sasaki ,  Taro Nishiguchi ,  Shinsuke Fujiwara

IPC分类号： C30B29/36 ,  B26D7/27 ,  C30B29/60

CPC分类号： C30B23/00 ,  C30B29/36 ,  C30B33/00

摘要： A single crystal silicon carbide substrate has a 4H-polytype crystal structure, has with nitrogen atoms doped as a conduction impurity with an atomic concentration of more than 1×1016/cm3, and has a main surface containing a circle having a diameter of 5 cm. The single crystal silicon carbide substrate includes only one of a facet region and a non-facet region. Thus, variation in nitrogen atom concentration in the single crystal silicon carbide substrate can be suppressed.

摘要翻译： 单晶碳化硅基板具有4H型多晶型结构，其氮原子掺杂为原子浓度大于1×1016 / cm3的导电杂质，并且具有包含直径为5cm的圆的主表面 。 单晶碳化硅衬底仅包括小面区域和非面区域中的一个。 因此，能够抑制单晶碳化硅基板的氮原子浓度的变化。

公开(公告)号：US08313376B2

公开(公告)日：2012-11-20

申请号：US12550859

申请日：2009-08-31

申请人： Shigeyuki Asuke ,  Masataka Takemoto ,  Makoto Sasaki

发明人： Shigeyuki Asuke ,  Masataka Takemoto ,  Makoto Sasaki

IPC分类号： A63F13/02 ,  G06F19/00

CPC分类号： A63F13/525 ,  A63F13/211 ,  A63F13/428 ,  A63F2300/64 ,  A63F2300/66 ,  A63F2300/8088

摘要： Reference point calculation means calculates a reference point with respect to a reference axis direction, the reference point being a center position based on positions of a plurality of objects and the reference axis direction being a predetermined axis direction of a display area. First determination means determines whether or not a position of the reference point is a position within a first distance from an end of the display area with respect to the reference axis direction. When the first determination means determines that the position of the reference point is within the first distance from the end of the display area, screen control means scrolls, along the reference axis direction, a display content of a virtual space displayed in the display area.

摘要翻译： 参考点计算装置基于参考轴方向计算参考点，参考点是基于多个物体的位置的中心位置，并且基准轴线方向是显示区域的预定轴线方向。 第一确定装置确定参考点的位置是否是距离显示区域的端部相对于参考轴线方向的第一距离内的位置。 当第一确定装置确定参考点的位置在距离显示区域的末端的第一距离内时，屏幕控制装置沿着参考轴线方向滚动显示在显示区域中的虚拟空间的显示内容。

公开(公告)号：US20120273800A1

公开(公告)日：2012-11-01

申请号：US13395494

申请日：2011-06-17

申请人： Tsutomu Hori ,  Shin Harada ,  Hiroki Inoue ,  Makoto Sasaki ,  Satomi Itoh ,  Yasuo Namikawa

发明人： Tsutomu Hori ,  Shin Harada ,  Hiroki Inoue ,  Makoto Sasaki ,  Satomi Itoh ,  Yasuo Namikawa

IPC分类号： H01L29/24

CPC分类号： H01L29/7802 ,  H01L21/02002 ,  H01L21/02529 ,  H01L21/02609 ,  H01L21/02667 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068

摘要： A first vertex of a first single-crystal silicon carbide substrate and a second vertex of a second single-crystal silicon carbide substrate abut each other such that a first side of the first single-crystal silicon carbide substrate and a second side of the second single-crystal silicon carbide substrate are aligned. In addition, at least a part of the first side and at least a part of the second side abut on a third side of a third single-crystal silicon carbide substrate. Thus, in manufacturing a semiconductor device including a composite substrate, process fluctuations caused by a gap between the single-crystal silicon carbide substrates can be suppressed.

摘要翻译： 第一单晶碳化硅衬底的第一顶点和第二单晶碳化硅衬底的第二顶点彼此邻接，使得第一单晶碳化硅衬底的第一侧和第二单晶碳化硅衬底的第二侧 - 晶体碳化硅衬底被对准。 此外，第一侧的至少一部分和第二侧的至少一部分与第三单晶碳化硅基板的第三面邻接。 因此，在制造包括复合衬底的半导体器件时，可以抑制由单晶碳化硅衬底之间的间隙引起的工艺波动。

公开(公告)号：US20120183466A1

公开(公告)日：2012-07-19

申请号：US13499482

申请日：2011-02-25

申请人： Makoto Sasaki

发明人： Makoto Sasaki

IPC分类号： C01B31/36 ,  C30B23/00

CPC分类号： C30B23/025 ,  C30B23/00 ,  C30B23/02 ,  C30B29/36 ,  C30B35/007 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02631 ,  Y10T428/21 ,  Y10T428/24355 ,  Y10T428/2982

摘要： An SiC crystal has Fe concentration not higher than 0.1 ppm and Al concentration not higher than 100 ppm. A method of manufacturing an SiC crystal includes the following steps. SiC powders for polishing are prepared as a first source material. A first SiC crystal is grown by sublimating the first source material through heating and precipitating an SiC crystal. A second source material is formed by crushing the first SiC crystal. A second SiC crystal is grown by sublimating the second source material through heating and precipitating an SiC crystal. Thus, an SiC crystal and a method of manufacturing an SiC crystal capable of achieving suppressed lowering in quality can be obtained.

摘要翻译： SiC晶体的Fe浓度不高于0.1ppm，Al浓度不高于100ppm。 制造SiC晶体的方法包括以下步骤。 制备用于抛光的SiC粉末作为第一源材料。 通过加热和沉淀SiC晶体升华第一源材料来生长第一SiC晶体。 通过粉碎第一SiC晶体形成第二源材料。 通过加热和沉淀SiC晶体升华第二源材料来生长第二SiC晶体。 因此，可以获得能够实现抑制质量下降的SiC晶体和制造SiC晶体的方法。

公开(公告)号：US20120168774A1

公开(公告)日：2012-07-05

申请号：US13395768

申请日：2011-05-19

申请人： Takeyoshi Masuda ,  Satomi Itoh ,  Shin Harada ,  Makoto Sasaki

发明人： Takeyoshi Masuda ,  Satomi Itoh ,  Shin Harada ,  Makoto Sasaki

IPC分类号： H01L29/24 ,  H01L21/20

CPC分类号： H01L21/187 ,  C30B29/36 ,  C30B33/06 ,  H01L29/1608

摘要： A silicon carbide substrate and a method for manufacturing the silicon carbide substrate are obtained, each of which achieves reduced manufacturing cost of semiconductor devices using the silicon carbide substrate. A method for manufacturing a SiC-combined substrate includes the steps of: preparing a plurality of single-crystal bodies each made of silicon carbide (SiC); forming a collected body; connecting the single-crystal bodies to each other; and slicing the collected body. In the step, the plurality of SiC single-crystal ingots are arranged with a silicon (Si) containing Si layer interposed therebetween, so as to form the collected body including the single-crystal bodies. In the step, adjacent SiC single-crystal ingots are connected to each other via at least a portion of the Si layer, the portion being formed into silicon carbide by heating the collected body. In step, the collected body in which the SiC single-crystal ingots are connected to each other is sliced.

摘要翻译： 获得碳化硅基板和制造碳化硅基板的方法，其中的每一个都降低了使用碳化硅基板的半导体器件的制造成本。 SiC复合衬底的制造方法包括以下步骤：制备由碳化硅（SiC）制成的多个单晶体; 形成收集体; 将单晶体体彼此连接; 并切片收集的身体。 在该步骤中，多个SiC单晶锭被布置成包含硅（Si）的Si层，以形成包括单晶体的收集体。 在该步骤中，相邻的SiC单晶锭通过Si层的至少一部分彼此连接，该部分通过加热收集体而形成为碳化硅。 在步骤中，将SiC单晶锭彼此连接的收集体切片。