公开(公告)号：US20130109110A1

公开(公告)日：2013-05-02

申请号：US13807197

申请日：2011-07-06

申请人： Makoto Sasaki ,  Shin Harada ,  Satomi Itoh ,  Kyoko Okita

发明人： Makoto Sasaki ,  Shin Harada ,  Satomi Itoh ,  Kyoko Okita

IPC分类号： H01L21/66

CPC分类号： H01L22/12 ,  H01L21/049 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7802 ,  Y10S438/931

摘要： A silicon carbide substrate is made of silicon carbide. In the silicon carbide substrate, a normal line of one main surface of the silicon carbide substrate and a normal line of a {03-38} plane form an angle of 0.5° or smaller in an orthogonal projection to a plane including a direction and a direction. In this way, there can be provided the silicon carbide substrate allowing for both improvement of channel mobility of a semiconductor device and stable characteristics thereof.

摘要翻译： 碳化硅衬底由碳化硅制成。 在碳化硅衬底中，碳化硅衬底的一个主表面的法线和{03-38}面的法线在垂直投影中形成0.5°或更小的角度，该平面包括<01- 10>方向和<0001>方向。 以这种方式，可以提供碳化硅衬底，其允许改善半导体器件的沟道迁移率和其稳定特性。

公开(公告)号：US20120208368A1

公开(公告)日：2012-08-16

申请号：US13502976

申请日：2011-02-25

申请人： Takeyoshi Masuda ,  Keiji Wada ,  Satomi Itoh ,  Toru Hiyoshi

发明人： Takeyoshi Masuda ,  Keiji Wada ,  Satomi Itoh ,  Toru Hiyoshi

IPC分类号： H01L21/31 ,  H01L21/308

CPC分类号： H01L29/7802 ,  H01L21/02057 ,  H01L21/02236 ,  H01L21/02301 ,  H01L21/0445 ,  H01L21/049 ,  H01L29/1608 ,  H01L29/66053 ,  H01L29/66068

摘要： A method of manufacturing an SiC semiconductor device includes the steps of forming a first oxide film on a first surface of an SiC semiconductor, removing the first oxide film, and forming a second oxide film constituting the SiC semiconductor device on a second surface exposed as a result of removal of the first oxide film in the SiC semiconductor. Between the step of removing the first oxide film and the step of forming a second oxide film, the SiC semiconductor is arranged in an atmosphere cut off from an ambient atmosphere.

摘要翻译： 一种制造SiC半导体器件的方法包括以下步骤：在SiC半导体的第一表面上形成第一氧化物膜，去除第一氧化物膜，以及在第二表面上形成构成SiC半导体器件的第二氧化膜， 去除SiC半导体中第一氧化膜的结果。 在除去第一氧化物膜的步骤和形成第二氧化物膜的步骤之间，将SiC半导体布置在从环境气氛切断的气氛中。

公开(公告)号：US20110309376A1

公开(公告)日：2011-12-22

申请号：US13102660

申请日：2011-05-06

申请人： Toru HIYOSHI ,  Keiji WADA ,  Takeyoshi MASUDA ,  Hiromu SHIOMI ,  Satomi ITOH ,  Tomihito MIYAZAKI

发明人： Toru HIYOSHI ,  Keiji WADA ,  Takeyoshi MASUDA ,  Hiromu SHIOMI ,  Satomi ITOH ,  Tomihito MIYAZAKI

IPC分类号： H01L29/161 ,  H01L21/306

CPC分类号： H01L29/7802 ,  H01L21/02043 ,  H01L21/02052 ,  H01L21/02054 ,  H01L21/02236 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02658 ,  H01L21/044 ,  H01L21/049 ,  H01L29/1608 ,  H01L29/66068

摘要： A method of cleaning an SiC semiconductor capable of exhibiting an effect of cleaning an SiC semiconductor is provided. An SiC semiconductor and an SiC semiconductor device capable of achieving improved characteristics are provided. The method of cleaning an SiC semiconductor includes the steps of forming an oxide film on a surface of an SiC semiconductor (step S2) and removing the oxide film (step S3). In the forming step (step S2), the oxide film is formed in a dry atmosphere at a temperature not lower than 700° C. that contains O element. The SiC semiconductor is an SiC semiconductor having a surface and the surface has metal surface density not higher than 1×1012 cm−2. The SiC semiconductor device includes an SiC semiconductor and an oxide film formed on a surface of the SiC semiconductor.

摘要翻译： 提供了一种能够显示清洁SiC半导体效果的SiC半导体的清洗方法。 提供能够实现改进的特性的SiC半导体和SiC半导体器件。 清洗SiC半导体的方法包括以下步骤：在SiC半导体的表面上形成氧化膜（步骤S2）并除去氧化膜（步骤S3）。 在成形步骤（步骤S2）中，氧化膜在含有O元素的不低于700℃的干燥气氛中形成。 SiC半导体是具有表面且表面的金属表面密度不高于1×1012cm-2的SiC半导体。 SiC半导体器件包括形成在SiC半导体的表面上的SiC半导体和氧化物膜。

公开(公告)号：US20110284871A1

公开(公告)日：2011-11-24

申请号：US13110547

申请日：2011-05-18

申请人： Shin HARADA ,  Makoto Sasaki ,  Satomi Itoh

发明人： Shin HARADA ,  Makoto Sasaki ,  Satomi Itoh

IPC分类号： H01L29/16 ,  H01L21/20

CPC分类号： H01L29/7802 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/2007 ,  H01L29/1608 ,  H01L29/66068

摘要： A silicon carbide substrate includes a base layer made of silicon carbide, an SiC layer made of single crystal silicon carbide, arranged on the base layer, and having a concentration of inevitable impurities lower than the concentration of inevitable impurities in the base layer, and a cover layer made of silicon carbide, formed on a main surface of the base layer at a side opposite to the SiC layer, and having a concentration of inevitable impurities lower than the concentration of inevitable impurities in the base layer.

摘要翻译： 碳化硅衬底包括由碳化硅制成的基底层，由单晶碳化硅制成的SiC层，布置在基底层上，并且具有低于基底层中不可避免的杂质浓度的不可避免的杂质浓度，以及 由碳化硅制成的覆盖层形成在与SiC层相反的一侧的基底层的主表面上，并且具有低于基底层中不可避免的杂质浓度的不可避免的杂质浓度。

公开(公告)号：US20120292742A1

公开(公告)日：2012-11-22

申请号：US13469951

申请日：2012-05-11

申请人： Satomi Itoh ,  Takeyoshi Masuda

发明人： Satomi Itoh ,  Takeyoshi Masuda

IPC分类号： H01L29/06

CPC分类号： H01L29/7802 ,  H01L21/8213 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7395

摘要： A MOSFET includes a silicon carbide substrate, a buffer layer made of silicon carbide formed on the silicon carbide substrate, a drift layer made of silicon carbide of an n conductivity type formed on the buffer layer, a p type body region of a p conductivity type formed in the drift layer to include a main surface of the drift layer opposite to the buffer layer, a source contact electrode formed on the p type body region, and a drain electrode formed on a main surface of the silicon carbide substrate opposite to the buffer layer. A current path region having an impurity concentration higher than that of another region in the drift layer is formed in a region in the drift layer sandwiched between the buffer layer and the body region.

摘要翻译： MOSFET包括碳化硅衬底，由碳化硅衬底上形成的碳化硅制成的缓冲层，形成在缓冲层上的n导电型碳化硅的漂移层，形成为p型导电类型的ap型体区域 所述漂移层包括与所述缓冲层相对的所述漂移层的主表面，形成在所述p型体区上的源极接触电极，以及形成在所述碳化硅衬底的与所述缓冲层相反的主表面上的漏电极。 在夹在缓冲层和体区之间的漂移层中形成杂质浓度高于漂移层中的另一区域的电流路径区域。

公开(公告)号：US20120208302A1

公开(公告)日：2012-08-16

申请号：US13502991

申请日：2011-02-25

申请人： Satomi Itoh ,  Hiromu Shiomi ,  Yasuo Namikawa ,  Keiji Wada ,  Mitsuru Shimazu ,  Toru Hiyoshi

发明人： Satomi Itoh ,  Hiromu Shiomi ,  Yasuo Namikawa ,  Keiji Wada ,  Mitsuru Shimazu ,  Toru Hiyoshi

IPC分类号： H01L21/66

CPC分类号： H01L21/02057 ,  H01L21/02236 ,  H01L21/049 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7802

摘要： There is provided a method for manufacturing a SiC semiconductor device achieving improved performance. The method for manufacturing the SiC semiconductor device includes the following steps. That is, a SiC semiconductor is prepared which has a first surface having at least a portion into which impurities are implanted. By cleaning the first surface of the SiC semiconductor, a second surface is formed. On the second surface, a Si-containing film is formed. By oxidizing the Si-containing film, an oxide film constituting the SiC semiconductor device is formed.

摘要翻译： 提供了一种制造提高性能的SiC半导体器件的方法。 SiC半导体器件的制造方法包括以下步骤。 也就是说，制备具有至少一部分注入有杂质的第一表面的SiC半导体。 通过清洗SiC半导体的第一表面，形成第二表面。 在第二表面上形成含Si膜。 通过氧化含Si膜，形成构成SiC半导体器件的氧化物膜。

公开(公告)号：US20120149175A1

公开(公告)日：2012-06-14

申请号：US13390869

申请日：2011-02-25

申请人： Keiji Wada ,  Takeyoshi Masuda ,  Tomihito Miyazaki ,  Toru Hiyoshi ,  Satomi Itoh ,  Hiromu Shiomi

发明人： Keiji Wada ,  Takeyoshi Masuda ,  Tomihito Miyazaki ,  Toru Hiyoshi ,  Satomi Itoh ,  Hiromu Shiomi

IPC分类号： H01L21/04

CPC分类号： H01L21/02052 ,  H01L21/02057 ,  H01L21/67051 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7802

摘要： A method of cleaning a SiC semiconductor includes the steps of forming an oxide film at the surface of a SiC semiconductor, and removing the oxide film. At the step of forming an oxide film, an oxide film is formed using ozone water having a concentration greater than or equal to 30 ppm. The forming step preferably includes the step of heating at least one of the surface of the SiC semiconductor and the ozone water. Thus, there can be obtained a method of cleaning a SiC semiconductor that can exhibit cleaning effect on the SiC semiconductor.

摘要翻译： 清洗SiC半导体的方法包括以下步骤：在SiC半导体的表面形成氧化膜，除去氧化物膜。 在形成氧化膜的步骤中，使用浓度大于或等于30ppm的臭氧水形成氧化膜。 成形步骤优选包括加热SiC半导体的表面和臭氧水中的至少一个的步骤。 因此，可以获得能够对SiC半导体具有清洁效果的SiC半导体的清洗方法。

公开(公告)号：US5308920A

公开(公告)日：1994-05-03

申请号：US923344

申请日：1992-07-31

申请人： Satomi Itoh

发明人： Satomi Itoh

IPC分类号： F28D15/02 ,  F28D15/04 ,  H01L23/427 ,  H05K7/20

CPC分类号： F28D15/046 ,  F28D15/0233 ,  H01L23/427 ,  H01L2924/0002

摘要： A radiating device for radiating heat of an electronic component to the atmosphere, includes a container body, a cap for tight-sealing the inner space of the container body, and a working fluid serving as a heat carrier kept in the container body. The bottom wall of the container body is flat and serves as a heat receiving portion. The working fluid repeats evaporation and condensation in the container body. In a corner where the inner surface of the bottom wall of the container body meets the inner surface of a vertical cylindrical wall, a loop groove is formed running all along the corner. A plurality of horizontal grooves intersecting the loop groove are formed on the inner surface of the bottom wall. A plurality of second grooves intersecting the loop grooves are formed on the inner surface of the cylindrical wall. The working fluid condensed at the heat radiating portion returns to the bottom wall through the vertical grooves and through the loop groove. The working fluid which has returned is dispersed entirely over the inner surface of the bottom wall along the horizontal grooves.

摘要翻译： 一种用于将电子部件散热到大气中的散热装置，包括容器主体，用于密封容器主体的内部空间的盖以及保持在容器主体中的作为热载体的工作流体。 容器主体的底壁是平坦的并且用作热接收部分。 工作流体重复容器体内的蒸发和冷凝。 在容器本体的底壁的内表面与垂直圆筒壁的内表面相交的拐角处，形成一个沿着角落的环形槽。 在底壁的内表面上形成有与环形槽相交的多个水平槽。 在圆筒壁的内表面上形成有与环形槽相交的多个第二槽。 在散热部分冷凝的工作流体通过垂直槽并通过环槽返回到底壁。 返回的工作流体沿着水平槽完全分散在底壁的内表面上。

公开(公告)号：USD341820S

公开(公告)日：1993-11-30

申请号：US933504

申请日：1992-08-21

申请人： Satomi Itoh

设计人： Satomi Itoh

公开(公告)号：US5213153A

公开(公告)日：1993-05-25

申请号：US853417

申请日：1992-03-17

申请人： Satomi Itoh

发明人： Satomi Itoh

IPC分类号： H01L23/36 ,  F28D15/02 ,  H01L23/427 ,  H01L23/467 ,  H01L23/473 ,  H05K7/20

CPC分类号： H01L23/467 ,  F28D15/0275 ,  F28D15/046 ,  F28F3/022 ,  F28F7/02 ,  H01L23/427 ,  H01L23/473 ,  F28F2220/00 ,  H01L2924/0002

摘要： A radiating device 10 has a rectangular parallelepiped block 11. Block 11 includes a first group of holes 12 to 19 and a second group of holes 20 to 23 causing convection of air. Passages for circulating gas and liquid serving as a heat pipe, are formed to extend in X, Y and Z directions in block 11. Opening ends of respective passages are closed by pins 51. The air heated in the holes is discharged to the atmosphere from the top surface of the block through the second group of holes. Accordingly, cool air in the atmosphere absorbed in the holes of the first group, carries the heat generated from the inner wall surface of the holes, is discharged to the atmosphere from the top surface of the block. Working fluid sealed in the passage frequently repeats an evaporation and condensation. The liquid condensed at the radiating portion returns to the heated portion along an inner wall surface defining the passage.

摘要翻译： 辐射装置10具有长方体块11.块11包括第一组孔12至19和第二组孔20至23，其引起空气对流。 循环气体和作为热管的液体的通道在块11中形成为在X，Y和Z方向上延伸。各个通道的开口端通过销51封闭。在孔中加热的空气被排出到大气中 块的顶部表面通过第二组孔。 因此，吸收在第一组的孔中的空气中的冷空气携带从孔的内壁表面产生的热量从块的顶表面排出到大气中。 密封在通道中的工作流体经常重复蒸发和冷凝。 在辐射部分处冷凝的液体沿着限定通道的内壁表面返回到加热部分。