公开(公告)号：US20120161158A1

公开(公告)日：2012-06-28

申请号：US13394640

申请日：2011-06-17

申请人： Tsutomu Hori ,  Shin Harada ,  Hiroki Inoue ,  Makoto Sasaki ,  Satomi Itoh ,  Kyoko Okita ,  Yasuo Namikawa

发明人： Tsutomu Hori ,  Shin Harada ,  Hiroki Inoue ,  Makoto Sasaki ,  Satomi Itoh ,  Kyoko Okita ,  Yasuo Namikawa

IPC分类号： H01L29/161

CPC分类号： H01L29/7802 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02631 ,  H01L21/0475 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068

摘要： A first silicon carbide substrate has a first backside surface connected to a supporting portion, a first front-side surface opposite to the first backside surface, and a first side surface connecting the first backside surface and the first front-side surface to each other. A second silicon carbide substrate has a second backside surface connected to the supporting portion, a second front-side surface opposite to the second backside surface, and a second side surface connecting the second backside surface and the second front-side surface to each other and forming a gap between the first side surface and the second side surface. A closing portion closes the gap. Thereby, foreign matters can be prevented from remaining in a gap between a plurality of silicon carbide substrates provided in a combined substrate.

摘要翻译： 第一碳化硅衬底具有连接到支撑部分的第一背面，与第一背面相对的第一前侧表面和将第一背面和第一前侧表面相互连接的第一侧表面。 第二碳化硅衬底具有连接到支撑部分的第二背面，与第二背面相对的第二前侧表面，以及将第二背面和第二前侧表面彼此连接的第二侧表面， 在第一侧表面和第二侧表面之间形成间隙。 闭合部分闭合间隙。 由此，可以防止异物残留在组合基板中设置的多个碳化硅基板之间的间隙中。

公开(公告)号：US20120273800A1

公开(公告)日：2012-11-01

申请号：US13395494

申请日：2011-06-17

申请人： Tsutomu Hori ,  Shin Harada ,  Hiroki Inoue ,  Makoto Sasaki ,  Satomi Itoh ,  Yasuo Namikawa

发明人： Tsutomu Hori ,  Shin Harada ,  Hiroki Inoue ,  Makoto Sasaki ,  Satomi Itoh ,  Yasuo Namikawa

IPC分类号： H01L29/24

CPC分类号： H01L29/7802 ,  H01L21/02002 ,  H01L21/02529 ,  H01L21/02609 ,  H01L21/02667 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068

摘要： A first vertex of a first single-crystal silicon carbide substrate and a second vertex of a second single-crystal silicon carbide substrate abut each other such that a first side of the first single-crystal silicon carbide substrate and a second side of the second single-crystal silicon carbide substrate are aligned. In addition, at least a part of the first side and at least a part of the second side abut on a third side of a third single-crystal silicon carbide substrate. Thus, in manufacturing a semiconductor device including a composite substrate, process fluctuations caused by a gap between the single-crystal silicon carbide substrates can be suppressed.

摘要翻译： 第一单晶碳化硅衬底的第一顶点和第二单晶碳化硅衬底的第二顶点彼此邻接，使得第一单晶碳化硅衬底的第一侧和第二单晶碳化硅衬底的第二侧 - 晶体碳化硅衬底被对准。 此外，第一侧的至少一部分和第二侧的至少一部分与第三单晶碳化硅基板的第三面邻接。 因此，在制造包括复合衬底的半导体器件时，可以抑制由单晶碳化硅衬底之间的间隙引起的工艺波动。

公开(公告)号：US20120276715A1

公开(公告)日：2012-11-01

申请号：US13395795

申请日：2011-06-17

申请人： Tsutomu Hori ,  Shin Harada ,  Makoto Sasaki ,  Hiroki Inoue ,  Kyoko Okita ,  Yasuo Namikawa ,  Satomi Itoh

发明人： Tsutomu Hori ,  Shin Harada ,  Makoto Sasaki ,  Hiroki Inoue ,  Kyoko Okita ,  Yasuo Namikawa ,  Satomi Itoh

IPC分类号： H01L21/762

CPC分类号： H01L29/7802 ,  H01L21/02002 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/0475 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068 ,  H01L2924/0002 ,  H01L2924/00

摘要： A connected substrate having a supporting portion and first and second silicon carbide substrates is prepared. The first silicon carbide substrate has a first backside surface connected to the supporting portion, a first front-side surface, and a first side surface connecting the first backside surface and the first front-side surface to each other. The second silicon carbide substrate has a second backside surface connected to the supporting portion, a second front-side surface, and a second side surface connecting the second backside surface and the second front-side surface to each other and forming a gap between the first side surface and the second side surface. A filling portion for filling the gap is formed. Then, the first and second front-side surfaces are polished. Then, the filling portion is removed. Then, a closing portion for closing the gap is formed.

摘要翻译： 制备具有支撑部分和第一和第二碳化硅衬底的连接衬底。 第一碳化硅衬底具有连接到支撑部分的第一背面，第一前侧表面和将第一背面和第一前侧表面相互连接的第一侧面。 第二碳化硅衬底具有连接到支撑部分的第二背侧表面，第二前侧表面和将第二背面和第二前侧表面彼此连接并在第一前侧面之间形成间隙的第二侧表面 侧表面和第二侧表面。 形成用于填充间隙的填充部分。 然后，对第一和第二前表面进行抛光。 然后，将填充部分移除。 然后，形成用于封闭间隙的封闭部分。

公开(公告)号：US20120009761A1

公开(公告)日：2012-01-12

申请号：US13256991

申请日：2010-09-28

申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

IPC分类号： H01L21/306 ,  H01L21/304

CPC分类号： C30B29/36 ,  C30B33/06

摘要： At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other.

摘要翻译： 制备至少一个具有背面并由碳化硅制成的单晶基板和具有主表面并由碳化硅制成的支撑部分。 在该制备步骤中，通过机械加工形成背面和主表面中的至少一个。 通过该形成步骤，在背面和主面中的至少一个上形成有晶体结构变形的表层。 表面层至少部分去除。 在该去除步骤之后，背面和主表面彼此连接。

公开(公告)号：US20110306181A1

公开(公告)日：2011-12-15

申请号：US13202437

申请日：2010-09-28

申请人： Makoto Sasaki ,  Shin Harada ,  Taro Nishiguchi ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

发明人： Makoto Sasaki ,  Shin Harada ,  Taro Nishiguchi ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

IPC分类号： H01L21/762

CPC分类号： H01L29/7802 ,  C30B29/36 ,  C30B33/06 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/2007 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7813

摘要： A method of manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate formed of silicon carbide and a SiC substrate formed of single crystal silicon carbide; fabricating a stacked substrate by stacking the base substrate and the SiC substrate to have their main surfaces in contact with each other; heating the stacked substrate to join the base substrate and the SiC substrate and thereby fabricating a joined substrate; and heating the joined substrate such that a temperature difference is formed between the base substrate and the SiC substrate, and thereby discharging voids formed at the step of fabricating the joined substrate at an interface between the base substrate and the SiC substrate to the outside.

摘要翻译： 制造碳化硅衬底的方法包括以下步骤：制备由碳化硅形成的基底衬底和由单晶碳化硅形成的SiC衬底; 通过堆叠基底基板和SiC基板以使它们的主表面彼此接触来制造堆叠的基板; 加热堆叠的基板以连接基底基板和SiC基板，从而制造接合的基板; 并且加热接合的基板，使得在基底基板和SiC基板之间形成温度差，从而将在基底基板和SiC基板之间的界面处制造接合基板的步骤中形成的空隙排出到外部。

公开(公告)号：US08435866B2

公开(公告)日：2013-05-07

申请号：US13256991

申请日：2010-09-28

申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

IPC分类号： H01L21/306 ,  H01L21/304

CPC分类号： C30B29/36 ,  C30B33/06

摘要： At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other.

摘要翻译： 制备至少一个具有背面并由碳化硅制成的单晶基板和具有主表面并由碳化硅制成的支撑部分。 在该制备步骤中，通过机械加工形成背面和主表面中的至少一个。 通过该形成步骤，在背面和主面中的至少一个上形成有晶体结构变形的表层。 表面层至少部分去除。 在该去除步骤之后，背面和主表面彼此连接。

公开(公告)号：US20120184113A1

公开(公告)日：2012-07-19

申请号：US13395793

申请日：2011-01-07

申请人： Hiroki Inoue ,  Shin Harada ,  Makoto Sasaki ,  Taro Nishiguchi ,  Kyoko Okita ,  Yasuo Namikawa

发明人： Hiroki Inoue ,  Shin Harada ,  Makoto Sasaki ,  Taro Nishiguchi ,  Kyoko Okita ,  Yasuo Namikawa

IPC分类号： H01L21/30 ,  H05B3/02

CPC分类号： H01L29/7802 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02667 ,  H01L21/7602 ,  H01L29/1608 ,  H01L29/66068

摘要： A step of preparing a stack is performed to position each single-crystal substrate in a first single-crystal substrate group and a first base substrate face to face with each other, position each single-crystal substrate in a second single-crystal substrate group and a second base substrate face to face with each other, and stack the first single-crystal substrate group, the first base substrate, an insertion portion, the second single-crystal substrate group, and the second base substrate in one direction in this order. Next, the stack is heated so as to allow a temperature of the stack to reach a temperature at which silicon carbide can sublime and so as to form a temperature gradient in the stack with the temperature thereof getting increased in the above-described direction. In this way, silicon carbide substrates can be manufactured efficiently.

摘要翻译： 执行制备叠层的步骤，将第一单晶衬底组和第一衬底中的每个单晶衬底彼此面对，将每个单晶衬底放置在第二单晶衬底组中， 第二基板彼此面对，并且在一个方向上依次堆叠第一单晶基板组，第一基板，插入部，第二单晶基板组和第二基板。 接下来，对叠层进行加热，以使堆叠的温度达到碳化硅可以升华的温度，并且在上述方向上随着温度升高而在叠层中形成温度梯度。 以这种方式，可以有效地制造碳化硅衬底。

公开(公告)号：US20110233561A1

公开(公告)日：2011-09-29

申请号：US13073385

申请日：2011-03-28

申请人： Taro NISHIGUCHI ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

发明人： Taro NISHIGUCHI ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

IPC分类号： H01L29/161

CPC分类号： H01L29/7802 ,  H01L21/0445 ,  H01L21/0475 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/417 ,  H01L29/6606 ,  H01L29/66068

摘要： A supporting portion is made of silicon carbide. At least one layer has first and second surfaces. The first surface is supported by the supporting portion. The at least one layer has first and second regions. The first region is made of silicon carbide of a single-crystal structure. The second region is made of graphite. The second surface has a surface formed by the first region. The first surface has a surface formed by the first region, and a surface formed by the second region. In this way, a semiconductor substrate can be provided which has a region made of silicon carbide having a single-crystal structure and a supporting portion made of silicon carbide and allows for reduced electric resistance of an interface therebetween.

摘要翻译： 支撑部分由碳化硅制成。 至少一层具有第一和第二表面。 第一表面由支撑部分支撑。 所述至少一层具有第一和第二区域。 第一区域由单晶结构的碳化硅制成。 第二区域由石墨制成。 第二表面具有由第一区域形成的表面。 第一表面具有由第一区域形成的表面和由第二区域形成的表面。 以这种方式，可以提供具有由具有单晶结构的碳化硅制成的区域和由碳化硅制成的支撑部分的区域并且允许其之间的界面的电阻降低的半导体衬底。

公开(公告)号：US20120161157A1

公开(公告)日：2012-06-28

申请号：US13393235

申请日：2010-09-28

申请人： Hiroki Inoue ,  Shin Harada ,  Makoto Sasaki ,  Taro Nishiguchi ,  Kyoko Okita ,  Yasuo Namikawa

发明人： Hiroki Inoue ,  Shin Harada ,  Makoto Sasaki ,  Taro Nishiguchi ,  Kyoko Okita ,  Yasuo Namikawa

IPC分类号： H01L29/161

CPC分类号： H01L29/7802 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02444 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02529 ,  H01L21/02631 ,  H01L21/0475 ,  H01L29/1608 ,  H01L29/66068

摘要： A silicon carbide substrate, which achieves restrained warpage even when a different-type material layer made of a material other than silicon carbide, includes: a base layer made of silicon carbide; and a plurality of SiC layers arranged side by side on the base layer when viewed in a planar view and each made of single-crystal silicon carbide. A gap is formed between end surfaces of adjacent SiC layers.

摘要翻译： 即使当由不同于碳化硅的材料制成的不同类型的材料层时也能实现约束翘曲的碳化硅衬底包括：由碳化硅制成的基底层; 以及在平面图中观察时，在基底层上并排设置的多个SiC层，并且均由单晶碳化硅构成。 在相邻SiC层的端面之间形成间隙。

公开(公告)号：US20120126251A1

公开(公告)日：2012-05-24

申请号：US13388691

申请日：2011-02-25

申请人： Makoto Sasaki ,  Shin Harada ,  Takeyoshi Masuda ,  Keiji Wada ,  Hiroki Inoue ,  Taro Nishiguchi ,  Kyoko Okita ,  Yasuo Namikawa ,  Taku Horii

发明人： Makoto Sasaki ,  Shin Harada ,  Takeyoshi Masuda ,  Keiji Wada ,  Hiroki Inoue ,  Taro Nishiguchi ,  Kyoko Okita ,  Yasuo Namikawa ,  Taku Horii

IPC分类号： H01L29/24 ,  H01L21/04

CPC分类号： H01L29/7802 ,  H01L21/2007 ,  H01L21/3247 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068

摘要： A method for manufacturing a silicon carbide substrate achieves reduced manufacturing cost. The method includes the steps of: preparing a base substrate and a SiC substrate; fabricating a stacked substrate by stacking the base substrate and the SiC substrate; fabricating a connected substrate by heating the stacked substrate; transferring a void, formed at a connection interface, in a thickness direction of the connected substrate by heating the connected substrate to cause the base substrate to have a temperature higher than that of the SiC substrate; and removing the void by removing a region including a main surface of the base substrate opposite to the SiC substrate.

摘要翻译： 制造碳化硅衬底的方法降低了制造成本。 该方法包括以下步骤：制备基底和SiC衬底; 通过堆叠基底基板和SiC基板来制造堆叠的基板; 通过加热堆叠的基板来制造连接的基板; 通过加热连接的基板，在连接的基板的厚度方向上形成在连接界面处形成的空隙，使得基底基板的温度高于SiC基板的温度; 并且通过去除包括与SiC衬底相对的基底衬底的主表面的区域来去除空隙。