公开(公告)号：US06614076B2

公开(公告)日：2003-09-02

申请号：US09905587

申请日：2001-07-13

申请人： Ritsuko Kawasaki ,  Hidehito Kitakado ,  Kenji Kasahara ,  Shunpei Yamazaki

发明人： Ritsuko Kawasaki ,  Hidehito Kitakado ,  Kenji Kasahara ,  Shunpei Yamazaki

IPC分类号： H01L2904

CPC分类号： H01L27/1214 ,  G02F1/13454 ,  H01L27/3244 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78633 ,  H01L29/78636 ,  H01L29/78645

摘要： To improve the operation characteristic and reliability of a semiconductor device by optimizing the structure of bottom gate type or inverted stagger type TFTs arranged in circuits of the semiconductor device in accordance with the function of the respective circuits. At least LDD regions that overlap with a gate electrode are formed in an N channel type TFT of a driving circuit, and LDD regions that do not overlap with the gate electrode are formed in an N channel type TFT of a pixel matrix circuit. The concentration of the two kinds of LDD regions is differently set from each other, to thereby obtain the optimal circuit operation.

摘要翻译： 通过根据各个电路的功能优化设置在半导体器件的电路中的底栅型或倒置交错型TFT的结构来提高半导体器件的操作特性和可靠性。 至少与栅电极重叠的LDD区域形成在驱动电路的N沟道型TFT中，并且在像素矩阵电路的N沟道型TFT中形成与栅电极不重叠的LDD区域。 两种LDD区域的浓度彼此不同，从而获得最佳电路操作。

公开(公告)号：US20050051772A1

公开(公告)日：2005-03-10

申请号：US10958887

申请日：2004-10-05

申请人： Ritsuko Kawasaki ,  Hidehito Kitakado ,  Kenji Kasahara ,  Shunpei Yamazaki

发明人： Ritsuko Kawasaki ,  Hidehito Kitakado ,  Kenji Kasahara ,  Shunpei Yamazaki

IPC分类号： G02F1/1362 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L29/08 ,  H01L31/036 ,  H01L29/15

CPC分类号： H01L27/1214 ,  G02F1/13454 ,  H01L27/3244 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78633 ,  H01L29/78636 ,  H01L29/78645

摘要： To improve the operation characteristic and reliability of a semiconductor device by optimizing the structure of bottom gate type or inverted stagger type TFTs arranged in circuits of the semiconductor device in accordance with the function of the respective circuits. At least LDD regions that overlap with a gate electrode are formed in an N channel type TFT of a driving circuit, and LDD regions that do not overlap with the gate electrode are formed in an N channel type TFT of a pixel matrix circuit. The concentration of the two kinds of LDD regions is differently set from each other, to thereby obtain the optimal circuit operation.

摘要翻译： 通过根据各个电路的功能优化设置在半导体器件的电路中的底栅型或倒置交错型TFT的结构来提高半导体器件的操作特性和可靠性。 至少与栅电极重叠的LDD区域形成在驱动电路的N沟道型TFT中，并且在像素矩阵电路的N沟道型TFT中形成与栅电极不重叠的LDD区域。 两种LDD区域的浓度彼此不同，从而获得最佳电路操作。

公开(公告)号：US07679131B1

公开(公告)日：2010-03-16

申请号：US09651889

申请日：2000-08-30

申请人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Shunpei Yamazaki

发明人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Shunpei Yamazaki

IPC分类号： H01L29/94

CPC分类号： H01L27/1222 ,  H01L27/1214 ,  H01L27/1274

摘要： A laser annealing method for obtaining a crystalline semiconductor film having a large grain size, and a method of manufacturing a semiconductor device using the crystalline semiconductor film, are provided. Using a shape change (convex portion or concave portion) of an amorphous semiconductor film when crystallizing the amorphous semiconductor film using irradiation of laser light, it is possible to intentionally regulate the origin of crystal growth, and to make the grain size large. By then designing the arrangement of an active layer (island shape semiconductor film) so as to contain at least a channel forming region within one grain, it becomes possible to improve the electrical characteristics of a TFT.

摘要翻译： 提供了用于获得具有大晶粒尺寸的晶体半导体膜的激光退火方法，以及使用该晶体半导体膜制造半导体器件的方法。 使用激光的照射使非晶半导体膜结晶时，使用非晶半导体膜的形状变化（凸部或凹部），有可能有意调节晶体生长的起因，并使晶粒尺寸变大。 然后，通过设计有源层（岛状半导体膜）的布置，以便至少在一个晶粒内容纳沟道形成区域，可以改善TFT的电特性。

公开(公告)号：US06844249B2

公开(公告)日：2005-01-18

申请号：US10648288

申请日：2003-08-27

申请人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Shunpei Yamazaki

发明人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Shunpei Yamazaki

IPC分类号： H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L21/20

CPC分类号： H01L27/12 ,  H01L27/1281 ,  H01L27/1285

摘要： The invention relates to a method for manufacturing a semiconductor device, and it is an object of the invention to form a semiconductor area formed in island-like patterns as a single crystal or an area which can be regarded as a single crystal, and to simultaneously achieve a laminated structure by which various characteristics of TFTs can be stabilized, wherein an insulation film is formed on a glass substrate, and island-like semiconductor layer is formed thereon. A laser beam passed through a cylindrical lens is made into a linear laser beam and irradiated onto the island-like semiconductor layer by an optical system. The island-like semiconductor layer is subjected to two components, one of which is a direct laser beam component passing through the cylindrical lens and being irradiated directly onto the island-like semiconductor layer, and the other of which is a diffused laser beam component transmitting an insulation film and a substrate, being reflected by a reflection plate, and again transmitting the substrate and insulation film and being irradiated onto the island-like semiconductor laser.

摘要翻译： 本发明涉及一种半导体器件的制造方法，其目的在于，形成岛状图案形成的半导体区域，作为单晶体或可以看作单晶面积的区域，同时 实现了能够稳定TFT的各种特性的层压结构，其中在玻璃基板上形成绝缘膜，并且在其上形成岛状半导体层。 通过柱面透镜的激光束被制成线性激光束并通过光学系统照射到岛状半导体层上。 岛状半导体层经受两个部件，其中一个部件是通过柱面透镜的直接激光束部件，并直接照射在岛状半导体层上，另一个部件是扩散激光束分量传输 由反射板反射的绝缘膜和基板，并再次透射基板和绝缘膜并照射到岛状半导体激光器上。

公开(公告)号：US06809382B2

公开(公告)日：2004-10-26

申请号：US10633754

申请日：2003-08-04

申请人： Ritsuko Kawasaki ,  Hidehito Kitakado ,  Kenji Kasahara ,  Shunpei Yamazaki

发明人： Ritsuko Kawasaki ,  Hidehito Kitakado ,  Kenji Kasahara ,  Shunpei Yamazaki

IPC分类号： H01L2701

CPC分类号： H01L27/1214 ,  G02F1/13454 ,  H01L27/3244 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78633 ,  H01L29/78636 ,  H01L29/78645

摘要： To improve the operation characteristic and reliability of a semiconductor device by optimizing the structure of bottom gate type or inverted stagger type TFTs arranged in circuits of the semiconductor device in accordance with the function of the respective circuits. At least LDD regions that overlap with a gate electrode are formed in an N channel type TFT of a driving circuit, and LDD regions that do not overlap with the gate electrode are formed in an N channel type TFT of a pixel matrix circuit. The concentration of the two kinds of LDD regions is differently set from each other, to thereby obtain the optimal circuit operation.

摘要翻译： 通过根据各个电路的功能优化设置在半导体器件的电路中的底栅型或倒置交错型TFT的结构来提高半导体器件的操作特性和可靠性。 至少与栅电极重叠的LDD区域形成在驱动电路的N沟道型TFT中，并且在像素矩阵电路的N沟道型TFT中形成与栅电极不重叠的LDD区域。 两种LDD区域的浓度彼此不同，从而获得最佳电路操作。

公开(公告)号：US06624013B2

公开(公告)日：2003-09-23

申请号：US10124489

申请日：2002-04-18

申请人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Shunpei Yamazaki

发明人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Shunpei Yamazaki

IPC分类号： H01L2100

CPC分类号： H01L27/12 ,  H01L27/1281 ,  H01L27/1285

摘要： The invention relates to a method for manufacturing a semiconductor device, and it is an object of the invention to form a semiconductor area formed in island-like patterns as a single crystal or an area which can be regarded as a single crystal, and to simultaneously achieve a laminated structure by which various characteristics of TFTs can be stabilized, wherein an insulation film is formed on a glass substrate, and island-like semiconductor layer is formed thereon. A laser beam passed through a cylindrical lens is made into a linear laser beam and irradiated onto the island-like semiconductor layer by an optical system. The island-like semiconductor layer is subjected to two components, one of which is a direct laser beam component passing through the cylindrical lens and being irradiated directly onto the island-like semiconductor layer, and the other of which is a diffused laser beam component transmitting an insulation film and a substrate, being reflected by a reflection plate, and again transmitting the substrate and insulation film and being irradiated onto the island-like semiconductor laser.

公开(公告)号：US06362507B1

公开(公告)日：2002-03-26

申请号：US09550828

申请日：2000-04-18

申请人： Hiroyuki Ogawa ,  Kazuhide Tomiyasu ,  Ritsuko Kawasaki ,  Hidehito Kitakado ,  Kenji Kasahara ,  Shunpei Yamazaki

发明人： Hiroyuki Ogawa ,  Kazuhide Tomiyasu ,  Ritsuko Kawasaki ,  Hidehito Kitakado ,  Kenji Kasahara ,  Shunpei Yamazaki

IPC分类号： H01L2703

CPC分类号： H01L27/1222 ,  G02F1/13454 ,  H01L27/1214 ,  H01L27/1255 ,  H01L2029/7863

摘要： An object of the present invention is to improve the reliability and the operation performance of a semiconductor device comprising a driver circuit and a pixel pixel section by optimizing the TFT structure disposed in each circuit in accordance with the function of the circuit. The optimized circuit operation can be obtained by providing a LDD region that overlaps with at least the gate electrode in the driver circuit n-channel TFT, and a LDD region in the pixel section n-channel TFT in which the impurity concentration of the both LDD regions are differed.

摘要翻译： 本发明的目的是通过根据电路的功能优化设置在每个电路中的TFT结构来提高包括驱动电路和像素像素部分的半导体器件的可靠性和操作性能。 可以通过提供与驱动电路n沟道TFT中的至少栅电极重叠的LDD区域和像素区间n沟道TFT中的两个LDD的杂质浓度的LDD区域来获得优化的电路操作 地区不同。

公开(公告)号：US06281552B1

公开(公告)日：2001-08-28

申请号：US09532690

申请日：2000-03-22

申请人： Ritsuko Kawasaki ,  Hidehito Kitakado ,  Kenji Kasahara ,  Shunpei Yamazaki

发明人： Ritsuko Kawasaki ,  Hidehito Kitakado ,  Kenji Kasahara ,  Shunpei Yamazaki

IPC分类号： H01L2904

CPC分类号： H01L27/1214 ,  G02F1/13454 ,  H01L27/3244 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78633 ,  H01L29/78636 ,  H01L29/78645

摘要： To improve the operation characteristic and reliability of a semiconductor device by optimizing the structure of bottom gate type or inverted stagger type TFTs arranged in circuits of the semiconductor device in accordance with the function of the respective circuits. At least LDD regions that overlap with a gate electrode are formed in an N channel type TFT of a driving circuit, and LDD regions that do not overlap with the gate electrode are formed in an N channel type TFT of a pixel matrix circuit. The concentration of the two kinds of LDD regions is differently set from each other, to thereby obtain the optimal circuit operation.

摘要翻译： 通过根据各个电路的功能优化设置在半导体器件的电路中的底栅型或倒置交错型TFT的结构来提高半导体器件的操作特性和可靠性。 至少与栅电极重叠的LDD区域形成在驱动电路的N沟道型TFT中，并且在像素矩阵电路的N沟道型TFT中形成与栅电极不重叠的LDD区域。 两种LDD区域的浓度彼此不同，从而获得最佳电路操作。

公开(公告)号：US07510920B2

公开(公告)日：2009-03-31

申请号：US11285012

申请日：2005-11-23

申请人： Shunpei Yamazaki ,  Akihisa Shimomura ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba ,  Kenji Kasahara

发明人： Shunpei Yamazaki ,  Akihisa Shimomura ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba ,  Kenji Kasahara

IPC分类号： H01L21/84

CPC分类号： H01L21/02686 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/2026 ,  H01L23/544 ,  H01L27/1285 ,  H01L29/04 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Position control of a crystal grain in accordance with an arrangement of a TFT is achieved, and at the same time, a processing speed during a crystallization process is increased. More specifically, there is provided a manufacturing method for a semiconductor device, in which crystal having a large grain size can be continuously formed through super lateral growth that is artificially controlled and substrate processing efficiency during a laser crystallization process can be increased. In the manufacturing method for a semiconductor device, instead of performing laser irradiation on an entire semiconductor film within a substrate surface, a marker as a reference for positioning is formed so as to crystallize at least an indispensable portion at minimum. Thus, a time period required for laser crystallization can be reduced to make it possible to increase a processing speed for a substrate. The above structure is applied to a conventional SLS method, so that it is possible to solve a problem inherent to the conventional SLS method, in that the substrate processing efficiency is poor.

摘要翻译： 实现了根据TFT的布置的晶粒的位置控制，并且同时提高了结晶过程中的处理速度。 更具体地，提供了一种半导体器件的制造方法，其中可以通过人工控制的超横向生长连续地形成具有大晶粒尺寸的晶体，并且可以增加激光晶化过程中的衬底处理效率。 在半导体器件的制造方法中，代替对基板表面内的整个半导体膜进行激光照射，形成用于定位的基准的标记，以至少使至少不可缺少的部分结晶。 因此，可以减少激光结晶所需的时间，从而可以提高基板的处理速度。 上述结构应用于传统的SLS方法，从而可以解决常规SLS方法固有的问题，因为衬底处理效率差。

公开(公告)号：US06979605B2

公开(公告)日：2005-12-27

申请号：US10306345

申请日：2002-11-29

申请人： Shunpei Yamazaki ,  Akihisa Shimomura ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba ,  Kenji Kasahara

发明人： Shunpei Yamazaki ,  Akihisa Shimomura ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba ,  Kenji Kasahara

IPC分类号： H01L29/786 ,  H01L21/20 ,  H01L21/77 ,  H01L21/84 ,  H01L23/544 ,  H01L29/04

CPC分类号： H01L21/02686 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/2026 ,  H01L23/544 ,  H01L27/1285 ,  H01L29/04 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Position control of a crystal grain in accordance with an arrangement of a TFT is achieved, and at the same time, a processing speed during a crystallization process is increased. More specifically, there is provided a manufacturing method for a semiconductor device, in which crystal having a large grain size can be continuously formed through super lateral growth that is artificially controlled and substrate processing efficiency during a laser crystallization process can be increased. In the manufacturing method for a semiconductor device, instead of performing laser irradiation on an entire semiconductor film within a substrate surface, a marker as a reference for positioning is formed so as to crystallize at least an indispensable portion at minimum. Thus, a time period required for laser crystallization can be reduced to make it possible to increase a processing speed for a substrate. The above structure is applied to a conventional SLS method, so that it is possible to solve a problem inherent to the conventional SLS method, in that the substrate processing efficiency is poor.

摘要翻译： 实现了根据TFT的布置的晶粒的位置控制，并且同时提高了结晶过程中的处理速度。 更具体地，提供了一种半导体器件的制造方法，其中可以通过人工控制的超横向生长连续地形成具有大晶粒尺寸的晶体，并且可以增加激光晶化过程中的衬底处理效率。 在半导体器件的制造方法中，代替对基板表面内的整个半导体膜进行激光照射，形成用于定位的基准的标记，以至少使至少不可缺少的部分结晶。 因此，可以减少激光结晶所需的时间，从而可以提高基板的处理速度。 上述结构应用于传统的SLS方法，从而可以解决常规SLS方法固有的问题，因为衬底处理效率差。