公开(公告)号：US10784410B2

公开(公告)日：2020-09-22

申请号：US16315081

申请日：2017-07-25

Applicant: King Abdullah University of Science and Technology

Inventor： Tien Khee Ng ,  Chao Zhao ,  Davide Priante ,  Boon S. Ooi ,  Mohamed Ebaid Abdrabou Hussein

IPC: H01L33/56 ,  H01L33/44 ,  C25B1/00 ,  H01L31/0216 ,  C25B1/04 ,  H01L31/18 ,  H01L31/0304 ,  H01L33/20 ,  H01L33/32

Abstract: Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and/or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and/or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided. Methods can include cleaning a native surface of a gallium nitride semiconductor to produce a cleaned surface, etching the cleaned surface to remove oxide layers on the surface, and applying single or multiple coatings of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof attached to the surface.

公开(公告)号：US12184329B2

公开(公告)日：2024-12-31

申请号：US17792280

申请日：2021-01-06

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Boon S. Ooi ,  Omar Alkhazragi ,  Tien Khee Ng

IPC: H04B10/116 ,  H04B10/2519 ,  H04B10/61

Abstract: A visible-light communication and illumination array includes a substrate and plural surface-emitting superluminescent diodes, SLDs, distributed across the substrate. A first set of SLDs of the plural SLDs generates a first light beam having substantially a first wavelength, a second set of SLDs of the plural SLDs generates a second light beam having substantially a second wavelength, and a third set of SLDs of the plural SLDs generates a third light beam having substantially a third wavelength. The array further includes a controller configured to encode at least one of the first light beam, the second light beam and the third light beam to transmit information. A combination of the first light beam, the second light beam and the third light beam produces white light.

公开(公告)号：US11575442B2

公开(公告)日：2023-02-07

申请号：US17423233

申请日：2020-02-19

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Boon Siew Ooi ,  Chun Hong Kang ,  Tien Khee Ng ,  Osman M. Bakr

IPC: H04B10/291 ,  H04B10/116 ,  H04B10/294

Abstract: A plastic optical fiber communication system includes a light source that emits a first signal having a first wavelength in a visible light spectrum, the first signal being encoded with information at a high data-rate of 0.1 to 10 Gbit/s; a pump laser system that emits a pump laser light having a second wavelength, different from the first wavelength; a perovskite-doped optical fiber excited by the pump laser light to generate an amplified spontaneous emission spectrum that encompasses the first wavelength so as to receive and amplify the first signal for generating an amplified output signal having the first wavelength; and a photodetector optically coupled to the perovskite-doped optical fiber, and configured to receive the amplified output signal at the high data-rate of 0.1 to 10 Gbit/s. The amplified output signal is encoded with the information.

公开(公告)号：US11438074B2

公开(公告)日：2022-09-06

申请号：US17413700

申请日：2019-11-26

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Boon S. Ooi ,  Chun Hong Kang ,  Tien Khee Ng ,  Osman M. Bakr ,  Ibrahim Dursun ,  Lutfan Sinatra ,  Marat Lutfullin

IPC: H04B10/00 ,  H04B10/69 ,  C09K11/66 ,  H04B10/116 ,  H04B10/67

Abstract: A high-speed, wavelength-converting receiver that includes a housing; a high-speed, wavelength-converting layer attached to the housing and configured to absorb a first light having a first wavelength range and emit a second light having a second wavelength range, which is different from the first wavelength range; and a high-speed photodetector attached to the housing and having an active face configured to absorb the second light having the second wavelength range and generate an electrical signal. The active face of the photodetector is fully placed within the housing.

公开(公告)号：US11025346B2

公开(公告)日：2021-06-01

申请号：US16863356

申请日：2020-04-30

Applicant: King Abdullah University of Science and Technology

Inventor： Boon S. Ooi ,  Bilal Janjua ,  Chao Shen ,  Hassan M. Oubei ,  Tien Khee Ng

IPC: H04B13/02 ,  H04B10/80 ,  H04L27/26 ,  H04B10/564 ,  H01S5/00 ,  H04B10/116

Abstract: Embodiments of the present disclosure describe an underwater optical communication and illumination system employing laser diodes directly encoded with data, including spectrally efficient orthogonal frequency division multiplex quadrature amplitude modulation (QAM-OFDM) data. A broadband light source may be utilized to provide both illumination to an underwater field of interest and underwater optical communication from the field of interest to a remote location.

公开(公告)号：US10665451B2

公开(公告)日：2020-05-26

申请号：US15753578

申请日：2016-10-07

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Boon Siew Ooi ,  Chao Zhao ,  Tien Khee Ng

IPC: H01L21/02 ,  H01L29/06 ,  H01L31/0352 ,  H01L33/22 ,  H01L33/32 ,  H01L33/40

Abstract: Elemental or compound semiconductors on metal substrates and methods of growing them are provided. The methods can include the steps of: (i) providing a metal substrate; (ii) adding an interlayer on a surface of the metal substrate, and (iii) growing semiconductor nanowires on the interlayer using a semiconductor epitaxy growth system to form the elemental or compound semiconductor. The method can include direct growth of high quality group III-V and group III-N based materials in the form of nanowires and nanowires-based devices on metal substrates. The nanowires on all-metal scheme greatly simplifies the fabrication process of nanowires based high power light emitters.

公开(公告)号：US10651343B2

公开(公告)日：2020-05-12

申请号：US15906694

申请日：2018-02-27

Applicant: King Abdullah University of Science and Technology

Inventor： Boon S. Ooi ,  Aditya Prabaswara ,  Bilal Janjua ,  Tien Khee Ng

IPC: H01L33/24 ,  H01L33/00 ,  H01L33/06 ,  H01L33/08 ,  H01L33/42 ,  H01L33/40 ,  H01L33/16 ,  H01L33/32 ,  H01L33/38 ,  H01L33/62

Abstract: A dislocation-free GaN/InGaN-based nanowires-LED epitaxially grown on a transparent, electrically conductive template substrate. The simultaneous transparency and conductivity are provided by a thin, translucent metal contact integrated with a quartz substrate. The light transmission properties of the translucent metal contact are tunable during epitaxial growth of the nanowires LED. Transparent light emitting diodes (LED) devices, optical circuits, solar cells, touch screen displays, and integrated photonic circuits can be implemented using the current platform.

公开(公告)号：US12044366B2

公开(公告)日：2024-07-23

申请号：US17879156

申请日：2022-08-02

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Ibrahim Dursun ,  Chao Shen ,  Osman M. Bakr ,  Tien Khee Ng ,  Boon Ooi

IPC: F21K9/64 ,  C09K11/02 ,  C09K11/66 ,  C09K11/88 ,  H04B10/116 ,  H05B33/14 ,  B82Y20/00 ,  F21Y115/10 ,  F21Y115/30

CPC classification number: F21K9/64 ,  C09K11/025 ,  C09K11/665 ,  C09K11/883 ,  H04B10/116 ,  H05B33/14 ,  B82Y20/00 ,  F21Y2115/10 ,  F21Y2115/30

Abstract: A device including a material including halide perovskite nanocrystals forming a film and configured to receive first electromagnetic radiation having a first wavelength emitted by an excitation source, the first electromagnetic radiation is modulated to include information prior to being received by the material, the material is configured to absorb the first electromagnetic radiation including the information and to emit second electromagnetic radiation having a second wavelength and also including the information, the second wavelength being in the visible range, and the first wavelength of the first electromagnetic radiation is shorter than the visible range; a detector configured to receive the second electromagnetic radiation and to extract the information; and a screen connected to the detector and configured to display the information.

公开(公告)号：US11979194B2

公开(公告)日：2024-05-07

申请号：US17422939

申请日：2020-02-19

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Boon Siew Ooi ,  Chun Hong Kang ,  Tien Khee Ng

IPC: H04B10/61 ,  F21V8/00 ,  G02B6/10 ,  G02B6/12 ,  H04B10/116

CPC classification number: H04B10/616 ,  G02B6/0003 ,  G02B6/102 ,  G02B6/12004 ,  H04B10/116 ,  G02B2006/12195

Abstract: A large-area, waveguide-based, high-speed ultraviolet and visible light photodetector system for optical wireless communication includes a substrate; plural, parallel, waveguides formed directly on the substrate and including a high quantum-yield wavelength-converting material of semiconductor nature; an optical coupling system optically connected to each one of the plural, parallel, waveguides; and a photodetector optically connected to the optical coupling system and configured to detect an outgoing light. The wavelength-converting material converts a first wavelength of an incoming light at high-speed, received by the plural, parallel, waveguides, into a second wavelength of the outgoing light. The first wavelength is different from the second wavelength, and the first and second wavelengths are between 200 and 800 nm.

公开(公告)号：US11949039B2

公开(公告)日：2024-04-02

申请号：US17290525

申请日：2019-11-04

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Boon S. Ooi ,  Aditya Prabaswara ,  Jung-Wook Min ,  Tien Khee Ng

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L33/42

CPC classification number: H01L33/007 ,  H01L27/156 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/42 ,  H01L33/32 ,  H01L2933/0016

Abstract: A method of forming an optoelectronic semiconductor device involves providing an amorphous substrate. A transparent and conductive oxide layer is deposited on the amorphous substrate. The transparent and conductive oxide layer is annealed to form an annealed transparent and conductive oxide layer having a cubic-oriented and/or rhombohedral-oriented surface. A nanorod array is formed on the cubic-oriented and/or rhombohedral-oriented surface of the annealed transparent and conductive oxide layer. The annealing of the transparent conductive oxide layer and the formation of the nanorod array are performed using molecular beam epitaxy (MBE). The nanorods of the nanorod array comprise a group-III material and are non-polar.