Ink jet recording apparatus with recovery means
    11.
    发明授权
    Ink jet recording apparatus with recovery means 失效
    具有回收装置的喷墨记录装置

    公开(公告)号:US5138343A

    公开(公告)日:1992-08-11

    申请号:US719700

    申请日:1991-06-26

    IPC分类号: B41J2/165

    摘要: A recording apparatus effects a recording operation by scanning a recording medium in a predetermined direction with a recording head provided with discharge openings for recording liquid. A cap member is capable of covering a face with discharge openings of said recording head. A transmission member causes said cap member to cover said face with discharge openings in response to a motion setting said recording head to a predetermined position; and engaging members consisting of a protruding part are provided on one of said recording head and a carriage supporting said head. The protruding part engages a receiving part for said protruding part formed on the other of said recording head and said carriage, wherein said protruding part and said receiving part mutually engage at two points when said cap member covers said face with discharge openings.

    摘要翻译: 记录装置通过用设置有用于记录液体的排出口的记录头沿预定方向扫描记录介质来进行记录操作。 盖构件能够覆盖具有所述记录头的排出口的面。 响应于将所述记录头的运动设置到预定位置,传动构件使所述盖构件覆盖具有排出口的所述面; 并且由突出部组成的接合构件设置在所述记录头中的一个和支撑所述头部的支架上。 突出部分与形成在所述记录头和所述托架中的另一个上的所述突起部分的接收部分接合,其中当所述盖构件用排出口覆盖所述面时,所述突出部分和所述接收部分相互接合在两点处。

    Ink quantity detecting device and recording apparatus with the devie
    16.
    发明授权
    Ink quantity detecting device and recording apparatus with the devie 失效
    墨量检测装置和装置的记录装置

    公开(公告)号:US5315317A

    公开(公告)日:1994-05-24

    申请号:US121251

    申请日:1993-09-15

    摘要: An ink quantity detecting device includes a plurality of ink chambers for containing inks, displacement members each provided for a corresponding one of the ink chambers and capable of being displaced in accordance with a quantity of a corresponding ink, a coupling member for coupling a plurality of displacement members, and a detecting unit for detecting displacement of at least one of the displacement members or the coupling member. The coupling member can be displaced in accordance with a quantity of at least one ink.

    摘要翻译: 油墨量检测装置包括多个用于容纳油墨的油墨室,每个设置用于对应的一个油墨室的位移元件,并且能够根据相应的油墨量移动;联接构件,用于将多个 位移构件和用于检测位移构件或联接构件中的至少一个的位移的检测单元。 可以根据至少一种油墨的量来移动联接构件。

    Integrated high voltage capacitor having capacitance uniformity structures and a method of manufacture therefor
    17.
    发明授权
    Integrated high voltage capacitor having capacitance uniformity structures and a method of manufacture therefor 有权
    具有电容均匀性结构的集成高压电容器及其制造方法

    公开(公告)号:US08273623B2

    公开(公告)日:2012-09-25

    申请号:US13396159

    申请日:2012-02-14

    IPC分类号: H01L21/8242

    摘要: The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a semiconductor substrate (105), and an insulator (130) located over the first capacitor plate (120), at least a portion of the insulator (130) comprising an interlevel dielectric layer (135, 138, 143, or 148). The integrated high voltage capacitor further includes capacitance uniformity structures (910) located at least partially within the insulator (130) and a second capacitor plate (160) located over the insulator (130).

    摘要翻译: 本发明提供了一种集成的高压电容器,因此制造方法和包括其的集成电路芯片。 集成的高压电容器以及其它特征包括位于半导体衬底(105)上方或半导体衬底(105)中的第一电容器板(120)和位于第一电容器板(120)上方的绝缘体(130),至少一部分 绝缘体(130)包括层间介电层(135,138,143或148)。 集成高压电容器还包括至少部分位于绝缘体(130)内的电容均匀性结构(910)和位于绝缘体(130)上方的第二电容器板(160)。

    Manufacturing method for epitaxial wafer
    20.
    发明授权
    Manufacturing method for epitaxial wafer 有权
    外延晶圆的制造方法

    公开(公告)号:US07960254B2

    公开(公告)日:2011-06-14

    申请号:US12645744

    申请日:2009-12-23

    IPC分类号: H01L21/20 C23C16/00

    摘要: To provide a manufacturing method for an epitaxial wafer that alleviates distortions on a back surface thereof due to sticking between a wafer and a susceptor, thereby preventing decrease in flatness thereof due to a lift pin. A manufacturing method for an epitaxial wafer according to the present invention includes: an oxide film forming step in which an oxide film is formed on a back surface thereof; an etching step in which a hydrophobic portion exposing a back surface of the semiconductor wafer is provided by partially removing the oxide film; a wafer placing step in which the semiconductor wafer is placed; and an epitaxial growth step in which an epitaxial layer is grown on a main surface of the semiconductor wafer; and the diameter of the lift pin installation circle provided on a circle on a bottom face of a susceptor is smaller than that of the hydrophobic portion.

    摘要翻译: 为了提供一种外延晶片的制造方法,其能够缓和由于晶片和基座之间的粘附而引起的背面的变形,从而防止由于升降销引起的平坦度的降低。 根据本发明的外延晶片的制造方法包括:在其背面形成有氧化膜的氧化膜形成工序; 通过部分去除氧化膜来提供暴露半导体晶片的背面的疏水部分的蚀刻步骤; 放置半导体晶片的晶片放置步骤; 以及在半导体晶片的主表面上生长外延层的外延生长步骤; 并且设置在基座的底面上的圆上的提升销安装圈的直径小于疏水部分的直径。