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    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    13.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20150048391A1

    公开(公告)日：2015-02-19

    申请号：US14377111

    申请日：2013-01-22

    Applicant: KOITO MANUFACTURING CO., LTD.

    Inventor： Shogo Sugimori ,  Osamu Kuboyama ,  Hisayoshi Daicho

    IPC: H01L25/13 ,  H01L33/50 ,  H01L33/54 ,  H01L33/58

    CPC classification number: H01L25/13 ,  F21K9/00 ,  H01L25/0753 ,  H01L33/505 ,  H01L33/507 ,  H01L33/54 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A semiconductor light-emitting device has a substrate, one or more semiconductor light-emitting elements provided on the substrate, and that emit light having a peak wavelength in a 380 nm to 480 nm wavelength region, and a molded member covering the semiconductor light-emitting element, and containing a phosphor that emits visible light by being excited by the emitted light from the semiconductor light-emitting element. The molded member is formed so that index A=H/(s/n) satisfies 0.3≦A≦6, where H is the height [mm] of the molded member from the substrate, s is the square root [mm] of the contact area between the substrate and the molded member, and n is the number of the semiconductor light-emitting elements covered with the molded member.

    Abstract translation: 半导体发光装置具有：基板，设置在基板上的一个以上的半导体发光元件，发射波长380nm〜480nm的峰值波长的光，以及覆盖半导体发光元件的成型体， 并且包含通过被来自半导体发光元件的发射光激发而发射可见光的荧光体。 模制件形成为使得指数A = H /（s / n）满足0.3＆nlE; A＆nlE; 6，其中H是模制构件与基底的高度[mm]，s是平方根[mm] 基板和模制构件之间的接触面积，n是被模制构件覆盖的半导体发光元件的数量。

    Vehicle lamp having radar with concealing part and electromagnetic absorbing cover
    14.
    发明授权
    Vehicle lamp having radar with concealing part and electromagnetic absorbing cover 有权

    公开(公告)号：US12222082B2

    公开(公告)日：2025-02-11

    申请号：US18530762

    申请日：2023-12-06

    Applicant: KOITO MANUFACTURING CO., LTD.

    Inventor： Yuta Maruyama ,  Yoshihiro Katsurada ,  Yuichi Watano ,  Osamu Kuboyama

    IPC: F21S45/10 ,  B60Q1/00 ,  B60Q1/04 ,  F21S41/20 ,  G01S7/02 ,  G01S13/931

    Abstract: A right-side vehicle lamp (2R) comprises: a lamp housing (14); a lamp cover (12) that covers an opening in the lamp housing (14); a low-beam illumination unit (3) positioned inside a lamp chamber (S) formed from the lamp housing (14) and the lamp cover (12); radar (5) configured so as to emit radio waves outside the vehicle, thereby acquiring radar data; and a shielding part (6) positioned so as to face the radar (5) so as to shield the radar (5) from the outside of the vehicle, the shielding part (6) being configured so as to transmit the radio waves emitted from the radar (5). The shielding part (6) is formed integrally with the lamp cover (12). The boundary (B) between the shielding part (6) and the lamp cover (12) is positioned outside the field of view (Fv) of the radar (5).

    Semiconductor light-emitting device
    19.
    发明授权
    Semiconductor light-emitting device 有权
    半导体发光装置

    公开(公告)号：US09406657B2

    公开(公告)日：2016-08-02

    申请号：US14377111

    申请日：2013-01-22

    Applicant: KOITO MANUFACTURING CO., LTD.

    Inventor： Shogo Sugimori ,  Osamu Kuboyama ,  Hisayoshi Daicho

    IPC: H01L33/62 ,  H01L25/13 ,  H01L33/50 ,  H01L33/58 ,  F21K99/00 ,  H01L25/075 ,  H01L33/54

    CPC classification number: H01L25/13 ,  F21K9/00 ,  H01L25/0753 ,  H01L33/505 ,  H01L33/507 ,  H01L33/54 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A semiconductor light-emitting device has a substrate, one or more semiconductor light-emitting elements provided on the substrate, and that emit light having a peak wavelength in a 380 nm to 480 nm wavelength region, and a molded member covering the semiconductor light-emitting element, and containing a phosphor that emits visible light by being excited by the emitted light from the semiconductor light-emitting element. The molded member is formed so that index A=H/(s/n) satisfies 0.3≦A≦6, where H is the height [mm] of the molded member from the substrate, s is the square root [mm] of the contact area between the substrate and the molded member, and n is the number of the semiconductor light-emitting elements covered with the molded member.

    Abstract translation: 半导体发光装置具有：基板，设置在基板上的一个以上的半导体发光元件，发射波长380nm〜480nm的峰值波长的光，以及覆盖半导体发光元件的成型体， 并且包含通过被来自半导体发光元件的发射光激发而发射可见光的荧光体。 模制件形成为使得指数A = H /（s / n）满足0.3≤A≤6，其中H是模制构件从基底的高度[mm]，s是平均根[mm] 基板和模制构件之间的接触面积，n是被模制构件覆盖的半导体发光元件的数量。

    Light emitting module
    20.
    发明授权
    Light emitting module 有权
    发光模块

    公开(公告)号：US09054280B2

    公开(公告)日：2015-06-09

    申请号：US14203604

    申请日：2014-03-11

    Applicant: Koito Manufacturing Co., Ltd.

    Inventor： Yuzo Maeno ,  Kazuhiro Ito ,  Osamu Kuboyama ,  Hisayoshi Daicho ,  Shogo Sugimori

    IPC: H01L33/00 ,  H01L33/50 ,  H01L25/075

    CPC classification number: H01L33/50 ,  H01L25/0753 ,  H01L33/504 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: In a light emitting module, a red phosphor is contained in a second phosphor layer so that the wavelength of a second phosphor layer after the wavelength conversion is longer than that of a first phosphor layer. And a blue phosphor and a yellow-green phosphor are contained in the first phosphor layer. The first phosphor layer is formed in an illumination area of light emitted from an LED chip, and the first phosphor layer converts the wavelength of the light from the LED chip and emits the wavelength-converted light from an emission surface. A part of the second phosphor layer is formed in a non-direct area where no light is illuminated from the LED chip and where light is illuminated from the first phosphor layer. The part of the second phosphor layer formed in the non-direct illumination area converts the wavelength of the light emitted from the first phosphor layer.

    Abstract translation: 在发光模块中，在第二荧光体层中含有红色荧光体，使得波长转换后的第二荧光体层的波长比第一荧光体层的波长长。 并且在第一荧光体层中包含蓝色荧光体和黄绿色荧光体。 第一荧光体层形成在从LED芯片发射的光的照明区域中，并且第一荧光体层转换来自LED芯片的光的波长，并从发射表面发射波长转换的光。 第二荧光体层的一部分形成在从LED芯片没有光照射的非直接区域中，并且从第一荧光体层照射光。 形成在非直接照射区域中的第二荧光体层的部分转换从第一荧光体层发射的光的波长。

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