公开(公告)号：US08455269B2

公开(公告)日：2013-06-04

申请号：US12376199

申请日：2006-08-04

申请人： Toshiyuki Miyanagi ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Yoshitaka Sugawara ,  Koji Nakayama ,  Ryosuke Ishii

发明人： Toshiyuki Miyanagi ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Yoshitaka Sugawara ,  Koji Nakayama ,  Ryosuke Ishii

IPC分类号： H01L21/00

CPC分类号： H01L29/045 ,  H01L23/345 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a bipolar semiconductor device such that electrons and holes are recombined in a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate at the time of on-state forward bias operation; an on-state forward voltage increased in a silicon carbide bipolar semiconductor device is recovered by shrinking the stacking fault area enlarged by on-state forward bias operation. In a method of this invention, the bipolar semiconductor device in which the stacking fault area enlarged and the on-state forward voltage has been increased by on-state forward bias operation, is heated at a temperature of higher than 350° C.

摘要翻译： 在双极型半导体器件中，在通态正向偏压工作时，从碳化硅单晶衬底的表面生长的碳化硅外延膜中电子和空穴复合; 在碳化硅双极半导体器件中增加的导通状态正向电压通过收缩通过接通状态正向偏置操作而扩大的堆垛层错的区域来恢复。 在本发明的方法中，通过接通状态的正向偏压操作来增加堆垛层错扩大区域和导通状态正向电压的双极性半导体器件在高于350℃的温度下被加热。

公开(公告)号：US08367510B2

公开(公告)日：2013-02-05

申请号：US12067028

申请日：2006-09-01

申请人： Toshiyuki Miyanagi ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Masahiro Nagano ,  Yoshitaka Sugawara ,  Koji Nakayama ,  Ryosuke Ishii

发明人： Toshiyuki Miyanagi ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Masahiro Nagano ,  Yoshitaka Sugawara ,  Koji Nakayama ,  Ryosuke Ishii

IPC分类号： H01L21/331

CPC分类号： H01L29/66068 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/0485 ,  H01L29/1608 ,  H01L29/861

摘要： In a bipolar silicon carbide semiconductor device in which an electron and a hole recombine with each other during current passage within a silicon carbide epitaxial film grown from a surface of a silicon carbide single crystal substrate, an object described herein is the reduction of defects which are the nuclei of a stacking fault which is expanded by current passage, thereby suppressing the increase of the forward voltage of the bipolar silicon carbide semiconductor device. In a method for producing a bipolar silicon carbide semiconductor device, the device is subjected to a thermal treatment at a temperature of 300° C. or higher in the final step of production. Preferably, the above-mentioned thermal treatment is carried out after the formation of electrodes and then the resulting bipolar silicon carbide semiconductor device is mounted in a package.

摘要翻译： 在从碳化硅单晶衬底的表面生长的碳化硅外延膜内的电流通过期间电子和空穴彼此复合的双极性碳化硅半导体器件中，本文所述的目的是减少 通过电流通过而扩展的堆垛层错的核，由此抑制双极性碳化硅半导体器件的正向电压的增加。 在制造双极性碳化硅半导体器件的方法中，在最后的制造工序中，在300℃以上的温度下进行热处理。 优选地，上述热处理在电极形成之后进行，然后将所得到的双极性碳化硅半导体器件安装在封装中。

公开(公告)号：US20090317983A1

公开(公告)日：2009-12-24

申请号：US12067028

申请日：2006-09-01

申请人： Toshiyuki Miyanagi ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Masahiro Nagano ,  Yoshitaka Sugawara ,  Koji Nakayama ,  Ryosuke Ishii

发明人： Toshiyuki Miyanagi ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Masahiro Nagano ,  Yoshitaka Sugawara ,  Koji Nakayama ,  Ryosuke Ishii

IPC分类号： H01L21/26

CPC分类号： H01L29/66068 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/0485 ,  H01L29/1608 ,  H01L29/861

摘要： In a bipolar silicon carbide semiconductor device in which an electron and a hole recombine with each other during current passage within a silicon carbide epitaxial film grown from a surface of a silicon carbide single crystal substrate, an object described herein is the reduction of defects which are the nuclei of a stacking fault which is expanded by current passage, thereby suppressing the increase of the forward voltage of the bipolar silicon carbide semiconductor device. In a method for producing a bipolar silicon carbide semiconductor device, the device is subjected to a thermal treatment at a temperature of 300° C. or higher in the final step of production. Preferably, the above-mentioned thermal treatment is carried out after the formation of electrodes and then the resulting bipolar silicon carbide semiconductor device is mounted in a package.

摘要翻译： 在从碳化硅单晶衬底的表面生长的碳化硅外延膜内的电流通过期间电子和空穴彼此复合的双极性碳化硅半导体器件中，本文所述的目的是减少 通过电流通过而扩展的堆垛层错的核，由此抑制双极性碳化硅半导体器件的正向电压的增加。 在制造双极性碳化硅半导体器件的方法中，在最后的制造工序中，在300℃以上的温度下进行热处理。 优选地，上述热处理在电极形成之后进行，然后将所得到的双极性碳化硅半导体器件安装在封装中。

公开(公告)号：US20090195296A1

公开(公告)日：2009-08-06

申请号：US12376199

申请日：2006-08-04

申请人： Toshiyuki Miyanagi ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Yoshitaka Sugawara ,  Koji Nakayama ,  Ryosuke Ishii

发明人： Toshiyuki Miyanagi ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Yoshitaka Sugawara ,  Koji Nakayama ,  Ryosuke Ishii

IPC分类号： G11C5/14 ,  H01L23/00 ,  H01L29/70 ,  H01L21/322

CPC分类号： H01L29/045 ,  H01L23/345 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a bipolar semiconductor device such that electrons and holes are recombined in a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate at the time of on-state forward bias operation; an on-state forward voltage increased in a silicon carbide bipolar semiconductor device is recovered by shrinking the stacking fault area enlarged by on-state forward bias operation. In a method of this invention, the bipolar semiconductor device in which the stacking fault area enlarged and the on-state forward voltage has been increased by on-state forward bias operation, is heated at a temperature of higher than 350° C.

摘要翻译： 在双极型半导体器件中，在通态正向偏压工作时，从碳化硅单晶衬底的表面生长的碳化硅外延膜中电子和空穴复合; 在碳化硅双极半导体器件中增加的导通状态正向电压通过收缩通过接通状态正向偏置操作而扩大的堆垛层错的区域来恢复。 在本发明的方法中，通过接通状态的正向偏压操作来增加堆垛层错扩大区域和导通状态正向电压的双极性半导体器件在高于350℃的温度下被加热。

公开(公告)号：US20100084663A1

公开(公告)日：2010-04-08

申请号：US12597121

申请日：2008-04-25

申请人： Ryosuke Ishii ,  Koji Nakayama ,  Yoshitaka Sugawara ,  Hidekazu Tsuchida

发明人： Ryosuke Ishii ,  Koji Nakayama ,  Yoshitaka Sugawara ,  Hidekazu Tsuchida

IPC分类号： H01L29/866 ,  H01L29/24

CPC分类号： H01L29/866 ,  H01L29/0615 ,  H01L29/1608 ,  H01L29/66106

摘要： A silicon carbide Zener diode is a bipolar semiconductor device that has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, formed thereon, a silicon carbide conductive layer of a first conductivity type, and a silicon carbide conductive layer of a second conductivity type formed on the silicon carbide conductive layer of a first conductivity type, wherein a depletion layer that is formed under reverse bias at a junction between the silicon carbide conductive layer of a first conductivity type and the silicon carbide conductive layer of a second conductivity type does not reach a mesa corner formed in the silicon carbide conductive layer of a first conductivity type.

摘要翻译： 一种碳化硅齐纳二极管是具有台面结构的双极半导体器件，包括形成在其上的第一导电类型的碳化硅单晶衬底，第一导电类型的碳化硅导电层和碳化硅导电层 形成在第一导电类型的碳化硅导电层上的第二导电类型，其中在第一导电类型的碳化硅导电层与第二导电类型的碳化硅导电层之间的接合处以反偏压形成的耗尽层 导电类型不到达形成在第一导电类型的碳化硅导电层中的台面角。

公开(公告)号：US20100032686A1

公开(公告)日：2010-02-11

申请号：US12525198

申请日：2008-01-31

申请人： Ryosuke Ishii ,  Koji Nakayama ,  Yoshitaka Sugawara ,  Hidekazu Tsuchida

发明人： Ryosuke Ishii ,  Koji Nakayama ,  Yoshitaka Sugawara ,  Hidekazu Tsuchida

IPC分类号： H01L29/866 ,  H01L21/04

CPC分类号： H01L29/866 ,  H01L29/06 ,  H01L29/0615 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/66106 ,  H01L29/8613

摘要： Bipolar semiconductor devices have a Zener voltage controlled very precisely in a wide range of Zener voltages (for example, from 10 to 500 V). A bipolar semiconductor device has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, a silicon carbide conductive layer of a first conductivity type, a highly doped layer of a second conductivity type and a silicon carbide conductive layer of a second conductivity type which substrate and conductive layers are laminated in the order named.

摘要翻译： 双极半导体器件在齐纳电压的宽范围（例如10至500V）内非常精确地控制齐纳电压。 双极半导体器件具有台面结构，并且包括第一导电类型的碳化硅单晶衬底，第一导电类型的碳化硅导电层，第二导电类型的高掺杂层和碳化硅导电层 第二导电类型，其中基板和导电层按顺序层压。

公开(公告)号：US08178949B2

公开(公告)日：2012-05-15

申请号：US12525198

申请日：2008-01-31

申请人： Ryosuke Ishii ,  Koji Nakayama ,  Yoshitaka Sugawara ,  Hidekazu Tsuchida

发明人： Ryosuke Ishii ,  Koji Nakayama ,  Yoshitaka Sugawara ,  Hidekazu Tsuchida

IPC分类号： H01L21/331

CPC分类号： H01L29/866 ,  H01L29/06 ,  H01L29/0615 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/66106 ,  H01L29/8613

摘要： Bipolar semiconductor devices have a Zener voltage controlled very precisely in a wide range of Zener voltages (for example, from 10 to 500 V). A bipolar semiconductor device has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, a silicon carbide conductive layer of a first conductivity type, a highly doped layer of a second conductivity type and a silicon carbide conductive layer of a second conductivity type which substrate and conductive layers are laminated in the order named.

摘要翻译： 双极半导体器件在齐纳电压的宽范围（例如10至500V）内非常精确地控制齐纳电压。 双极半导体器件具有台面结构，并且包括第一导电类型的碳化硅单晶衬底，第一导电类型的碳化硅导电层，第二导电类型的高掺杂层和碳化硅导电层 第二导电类型，其中基板和导电层按顺序层压。

公开(公告)号：US08093599B2

公开(公告)日：2012-01-10

申请号：US12597121

申请日：2008-04-25

申请人： Ryosuke Ishii ,  Koji Nakayama ,  Yoshitaka Sugawara ,  Hidekazu Tsuchida

发明人： Ryosuke Ishii ,  Koji Nakayama ,  Yoshitaka Sugawara ,  Hidekazu Tsuchida

IPC分类号： H01L29/866

CPC分类号： H01L29/866 ,  H01L29/0615 ,  H01L29/1608 ,  H01L29/66106

摘要： A silicon carbide Zener diode is a bipolar semiconductor device that has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, formed thereon, a silicon carbide conductive layer of a first conductivity type, and a silicon carbide conductive layer of a second conductivity type formed on the silicon carbide conductive layer of a first conductivity type, wherein a depletion layer that is formed under reverse bias at a junction between the silicon carbide conductive layer of a first conductivity type and the silicon carbide conductive layer of a second conductivity type does not reach a mesa corner formed in the silicon carbide conductive layer of a first conductivity type.

摘要翻译： 一种碳化硅齐纳二极管是具有台面结构的双极半导体器件，包括形成在其上的第一导电类型的碳化硅单晶衬底，第一导电类型的碳化硅导电层和碳化硅导电层 形成在第一导电类型的碳化硅导电层上的第二导电类型，其中在第一导电类型的碳化硅导电层与第二导电类型的碳化硅导电层之间的接合处以反偏压形成的耗尽层 导电类型不到达形成在第一导电类型的碳化硅导电层中的台面角。

公开(公告)号：US20140045680A1

公开(公告)日：2014-02-13

申请号：US14112507

申请日：2012-04-17

申请人： Koji Nakayama ,  Yoshihiko Yokoyama

发明人： Koji Nakayama ,  Yoshihiko Yokoyama

IPC分类号： B01J27/185 ,  B01J23/755

CPC分类号： B01J27/1853 ,  B01J21/066 ,  B01J23/42 ,  B01J23/44 ,  B01J23/755 ,  B01J35/06 ,  B22F1/0025 ,  B22F9/002 ,  B22F9/082 ,  B22F2999/00 ,  B82Y30/00 ,  C22C1/002 ,  C22C1/03 ,  C22C1/0433 ,  C22C1/0458 ,  C22C1/0466 ,  C22C28/00 ,  C22C33/003 ,  C22C33/02 ,  C22C38/002 ,  C22C45/00 ,  C22C45/003 ,  C22C45/02 ,  C22C45/04 ,  C22C45/10 ,  B22F2202/03

摘要： Provided is a method for easily manufacturing large volumes of a metallic glass nanowire with an extremely small diameter. This metallic glass nanowire manufacturing method is characterized in that a melted metallic glass or a master alloy thereof is gas-atomized in a supercooled state.

摘要翻译： 提供了容易制造大体积的具有极小直径的金属玻璃纳米线的方法。 该金属玻璃纳米线的制造方法的特征在于，熔融金属玻璃或其母合金以过冷却状态进行气体雾化。

公开(公告)号：US08079698B2

公开(公告)日：2011-12-20

申请号：US11782725

申请日：2007-07-25

申请人： Koji Nakayama

发明人： Koji Nakayama

IPC分类号： B41J2/01

CPC分类号： B41J29/17 ,  B41J11/0015 ,  B41J11/007

摘要： There is disclosed an inkjet recording apparatus including a feeding device, a remover, and an inkjet head. The feeding device feeds a recording medium along a feed path passing through a removing area. A part of an opposingly-feeding surface extends opposed to the ink jet head and along the feed path, and the removing area is located under the opposingly-feeding surface and within the opposingly-feeding surface as seen in a vertical direction. The remover removes foreign matter from a surface of the recording medium during the recording medium is fed through the removing area by the feeding device. The inkjet head is disposed downstream of the remover with respect to a feeding direction in which the recording medium is fed. The inkjet head has an ink ejection surface in which a nozzle is open, and an ink droplet is ejected from the nozzle toward a recording surface of the recording medium while the recording medium is fed along at least a part of the opposingly-feeding surface.

摘要翻译： 公开了一种喷墨记录装置，其包括进料装置，去除剂和喷墨头。 馈送装置沿着通过去除区域的馈送路径馈送记录介质。 反向进给表面的一部分与喷墨头相对并且沿着进给路径延伸，并且在垂直方向上看去除区域位于相对输送表面下方和相对进给表面内。 在记录介质通过进给装置通过去除区域供给时，去除器从记录介质的表面去除异物。 喷墨头相对于记录介质被供给的进给方向设置在去除器的下游。 喷墨头具有其中喷嘴打开的喷墨表面，并且当记录介质沿着相对输送表面的至少一部分进给时，墨滴从喷嘴朝向记录介质的记录表面喷射。