公开(公告)号：US08003975B2

公开(公告)日：2011-08-23

申请号：US11600101

申请日：2006-11-16

申请人： Tetsuzo Ueda ,  Tsuyoshi Tanaka

发明人： Tetsuzo Ueda ,  Tsuyoshi Tanaka

IPC分类号： H01L31/00

CPC分类号： H01L21/76898 ,  H01L21/6835 ,  H01L23/66 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/7787 ,  H01L2221/6835 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/14 ,  H01L2924/19032 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/30105 ,  H01L2924/00

摘要： A semiconductor integrated circuit device includes: a semiconductor layer having a principal surface on which a source electrode, a drain electrode and a gate electrode are formed and having a first through hole; an insulating film formed in contact with the semiconductor layer and having a second through hole; a first interconnection formed on the semiconductor layer through the first through hole and connected to one of the source electrode, the drain electrode and the gate electrode which is exposed in the first through hole; and a second interconnection formed on the insulating film through the second through hole and connected to another of the source electrode, the drain electrode and the gate electrode which is exposed in the second through hole. The first interconnection and the second interconnection face each other and form a microstrip line.

摘要翻译： 半导体集成电路器件包括：半导体层，其主表面上形成有源电极，漏电极和栅电极，并具有第一通孔; 形成为与所述半导体层接触并具有第二通孔的绝缘膜; 通过所述第一通孔形成在所述半导体层上并与所述第一通孔露出的所述源电极，所述漏电极和所述栅电极之一连接的第一互连; 以及通过第二通孔形成在绝缘膜上的第二互连，并与第二通孔中露出的源电极，漏电极和栅电极中的另一个连接。 第一互连和第二互连彼此面对并形成微带线。

公开(公告)号：US07910464B2

公开(公告)日：2011-03-22

申请号：US12695759

申请日：2010-01-28

申请人： Tomohiro Murata ,  Yutaka Hirose ,  Tsuyoshi Tanaka ,  Yasuhiro Uemoto

发明人： Tomohiro Murata ,  Yutaka Hirose ,  Tsuyoshi Tanaka ,  Yasuhiro Uemoto

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L29/66871 ,  H01L21/28 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/8128

摘要： A semiconductor device of the present invention includes: a III-V nitride semiconductor layer including a channel region in which carriers travel; a concave portion provided in an upper portion of the channel region in the III-V nitride semiconductor layer; and a Schottky electrode consisting of a conductive material forming a Schottky junction with the semiconductor layer, and formed on a semiconductor layer, which spreads over the concave portion and peripheral portions of the concave portion, on the III-V nitride semiconductor layer. A dimension of the concave portion in a depth direction is set so that a portion of the Schottky electrode provided in the concave portion can adjust a quantity of the carriers traveling in the channel region.

摘要翻译： 本发明的半导体器件包括：III-V族氮化物半导体层，其包括载流子行进的沟道区; 设置在III-V族氮化物半导体层中的沟道区的上部的凹部; 和由形成与半导体层形成肖特基结的导电材料构成的肖特基电极，形成在III-V族氮化物半导体层上的在凹部的凹部和周边部分上方扩散的半导体层上。 深度方向上的凹部的尺寸被设定为使得设置在凹部中的肖特基电极的一部分可以调节在沟道区域中行进的载流子的量。

公开(公告)号：US20110058560A1

公开(公告)日：2011-03-10

申请号：US12852242

申请日：2010-08-06

申请人： Hideki OKITA ,  Masahiro Yoshizawa ,  Tsuyoshi Tanaka ,  Toshiaki Tarui

发明人： Hideki OKITA ,  Masahiro Yoshizawa ,  Tsuyoshi Tanaka ,  Toshiaki Tarui

IPC分类号： H04L12/28

CPC分类号： H04L12/4641 ,  H04L12/4637 ,  H04L12/4645 ,  H04L12/467 ,  H04L41/0806 ,  H04L49/354

摘要： A virtual network management server includes ring node information that manages configuration nodes for each of the rings, and ring connection I/F for each of the ring configuration nodes, generates the VLAN configuration information so as to transfer a frame that is transmitted or received by a designated gateway connection port and a designated base station connection port by the designated VLAN, and also so as to transmit or receive a tagged frame of the designated VLAN by the ring connection I/F of all of the ring to which the gateway connection switch belongs and the ring to which the base station connection switch belongs, and updates the VLAN configuration of the switch.

摘要翻译： 虚拟网络管理服务器包括管理每个环的配置节点的环节节点信息，以及每个环配置节点的环路连接I / F，生成VLAN配置信息，以便传输由VLAN发送或接收的帧 通过指定的VLAN指定网关连接端口和指定的基站连接端口，并且还通过网关连接交换机的所有环的环形连接I / F来发送或接收指定VLAN的标记帧 属于基站连接交换机所属的环，更新交换机的VLAN配置。

公开(公告)号：US07898002B2

公开(公告)日：2011-03-01

申请号：US11890480

申请日：2007-08-07

申请人： Masahiro Hikita ,  Tetsuzo Ueda ,  Manabu Yanagihara ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka

发明人： Masahiro Hikita ,  Tetsuzo Ueda ,  Manabu Yanagihara ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka

IPC分类号： H01L21/337 ,  H01L21/335

CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/432 ,  H01L29/66462

摘要： A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer formed over the substrate; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a larger band gap energy than the first nitride semiconductor layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer and including a p-type nitride semiconductor with at least a single-layer structure; a gate electrode formed on the third nitride semiconductor layer; and a source electrode and a drain electrode formed in regions located on both sides of the gate electrode, respectively. The third nitride semiconductor layer has a thickness greater in a portion below the gate electrode than in a portion below the side of the gate electrode.

摘要翻译： 氮化物半导体器件包括：衬底; 形成在所述基板上的第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更大的带隙能量的第二氮化物半导体层; 形成在所述第二氮化物半导体层上并且包括具有至少单层结构的p型氮化物半导体的第三氮化物半导体层; 形成在所述第三氮化物半导体层上的栅极; 以及分别形成在位于栅电极两侧的区域中的源电极和漏电极。 所述第三氮化物半导体层的厚度比所述栅极电极侧的部分的厚度大。

公开(公告)号：US20100327293A1

公开(公告)日：2010-12-30

申请号：US12880704

申请日：2010-09-13

申请人： Masahiro Hikita ,  Tetsuzo Ueda ,  Manabu Yanagihara ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka

发明人： Masahiro Hikita ,  Tetsuzo Ueda ,  Manabu Yanagihara ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka

IPC分类号： H01L29/20

CPC分类号： H01L29/7786 ,  H01L29/0843 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/432 ,  H01L29/66462 ,  H01L29/7783

摘要： An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type GaN layer and a heavily doped p-type GaN layer are formed in this order. A gate electrode forms an Ohmic contact with the heavily doped p-type GaN layer. A source electrode and a drain electrode are provided on the undoped AlGaN layer. A pn junction is formed in a gate region by a two dimensional electron gas generated at an interface between the undoped AlGaN layer and the undoped GaN layer and the p-type GaN layer, so that a gate voltage can be increased.

摘要翻译： 依次形成AlN缓冲层，未掺杂的GaN层，未掺杂的AlGaN层，p型GaN层和重掺杂的p型GaN层。 栅电极与重掺杂的p型GaN层形成欧姆接触。 源电极和漏电极设置在未掺杂的AlGaN层上。 通过在未掺杂的AlGaN层和未掺杂的GaN层和p型GaN层之间的界面处产生的二维电子气在栅极区域中形成pn结，从而可以提高栅极电压。

公开(公告)号：US07859087B2

公开(公告)日：2010-12-28

申请号：US12637240

申请日：2009-12-14

申请人： Tomohiro Murata ,  Hiroaki Ueno ,  Hidetoshi Ishida ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Tomohiro Murata ,  Hiroaki Ueno ,  Hidetoshi Ishida ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L23/58

CPC分类号： H01L29/7787 ,  H01L23/367 ,  H01L23/3677 ,  H01L29/2003 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.

公开(公告)号：US20100318707A1

公开(公告)日：2010-12-16

申请号：US12866061

申请日：2008-08-13

申请人： Tsuyoshi Tanaka ,  Nobuo Higaki ,  Takasi Inoue ,  Yosuke Kudo ,  Kazushi Kurata

发明人： Tsuyoshi Tanaka ,  Nobuo Higaki ,  Takasi Inoue ,  Yosuke Kudo ,  Kazushi Kurata

IPC分类号： G06F13/24 ,  G06F9/30

CPC分类号： G06F13/385 ,  G06F3/0611 ,  G06F3/0656 ,  G06F3/0659 ,  G06F3/0683

摘要： An external device access apparatus according to the present invention includes: an address control unit that accepts a prefetch request and a prefetch data readout request from a master and performs a prefetch operation and a prefetch data readout operation; a readout data storage unit that stores data read out through the prefetch operation; a storage operation status holding unit that holds a prefetch operation status indicating whether or not the prefetch operation has been completed; and an acceptance signal generation unit that outputs, to the master, an acceptance signal indicating that the prefetch data readout request has been accepted from the master. First information indicating a status of the prefetch operation is outputted to the master based on the prefetch operation status.

摘要翻译： 根据本发明的外部设备接入装置包括：地址控制单元，其从主机接收预取请求和预取数据读出请求，并执行预取操作和预取数据读出操作; 读出数据存储单元，存储通过预取操作读出的数据; 存储操作状态保持单元，其保存指示预取操作是否已经完成的预取操作状态; 以及接收信号生成单元，其向主设备输出表示预取数据读出请求已经从主机接受的接收信号。 基于预取操作状态，将指示预取操作的状态的第一信息输出到主机。

公开(公告)号：US20100268426A1

公开(公告)日：2010-10-21

申请号：US12617987

申请日：2009-11-13

申请人： Rabindra Pathak ,  Peter Veprek ,  Kem Gallione ,  Tsuyoshi Tanaka

发明人： Rabindra Pathak ,  Peter Veprek ,  Kem Gallione ,  Tsuyoshi Tanaka

IPC分类号： B60W50/08 ,  G06F3/033 ,  G06F3/041 ,  G06F7/00 ,  B60W10/00 ,  G06F3/048

CPC分类号： G06F3/03547 ,  B60W2550/402 ,  G06F3/0482 ,  G06F3/0485 ,  G06F3/04883 ,  G06F3/04886 ,  G06F2203/0339

摘要： A reconfigurable vehicle user interface system is presented. A vehicle user interface has a touch sensitive input devices such as touchpads and a touch screen that have specific function commands mapped to them. A user can select which function commands are mapped to which portions of the touch screen. This allows a user to customize the steering wheel function commands.

摘要翻译： 提出了一种可重构车辆用户界面系统。 车辆用户界面具有诸如触摸板和触摸屏的触敏输入设备，其具有映射到它们的特定功能命令。 用户可以选择哪些功能命令映射到触摸屏的哪些部分。 这允许用户定制方向盘功能命令。

公开(公告)号：US20100249406A1

公开(公告)日：2010-09-30

申请号：US12595795

申请日：2008-03-13

申请人： Tetsu Yamakawa ,  Hidenori Aihara ,  Naoko Yanai ,  Tsuyoshi Tanaka ,  Yoko Honma ,  Masaru Sato

发明人： Tetsu Yamakawa ,  Hidenori Aihara ,  Naoko Yanai ,  Tsuyoshi Tanaka ,  Yoko Honma ,  Masaru Sato

IPC分类号： C07D401/10

CPC分类号： H01L51/0067 ,  C07D251/24 ,  C07D401/10 ,  C07D401/14 ,  H01L51/5048 ,  H05B33/22

摘要： A phenyl-substituted 1,3,5-triazine compound represented by the general formula (1); wherein Ar1 and Ar2 independently represent substituted or unsubstituted phenyl, naphthyl or biphenylyl group; R1, R2 and R3 independently represent hydrogen atom or methyl group; X1 and X2 independently represent substituted or unsubstituted phenylene, naphthylene or pyridylene group; p and q independently represent an integer of 0 to 2; and Ar3 and Ar4 independently represent substituted or unsubstituted pyridyl or phenyl group. This compound is suitable for an organic electroluminescent device.

摘要翻译： 由通式（1）表示的苯基取代的1,3,5-三嗪化合物; 其中Ar1和Ar2独立地表示取代或未取代的苯基，萘基或联苯基; R1，R2和R3独立地表示氢原子或甲基; X 1和X 2独立地表示取代或未取代的亚苯基，亚萘基或亚吡啶基; p和q独立地表示0〜2的整数。 Ar 3和Ar 4独立地表示取代或未取代的吡啶基或苯基。 该化合物适用于有机电致发光器件。

公开(公告)号：US20100244045A1

公开(公告)日：2010-09-30

申请号：US12795143

申请日：2010-06-07

申请人： Manabu YANAGIHARA ,  Kazushi Nakazawa ,  Tsuyoshi Tanaka

发明人： Manabu YANAGIHARA ,  Kazushi Nakazawa ,  Tsuyoshi Tanaka

IPC分类号： H01L29/20

CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/7787 ,  H01L29/872

摘要： A semiconductor device includes a first semiconductor layer which is formed above a substrate, a Schottky electrode and an ohmic electrode which are formed on the first semiconductor layer to be spaced from each other and a second semiconductor layer which is formed to cover the first semiconductor layer with the Schottky electrode and the ohmic electrode exposed. The second semiconductor layer has a larger band gap than that of the first semiconductor layer.

摘要翻译： 半导体器件包括形成在衬底上的第一半导体层，形成在第一半导体层上彼此间隔开的肖特基电极和欧姆电极以及形成为覆盖第一半导体层的第二半导体层 肖特基电极和欧姆电极暴露。 第二半导体层具有比第一半导体层更大的带隙。