公开(公告)号：US07562539B2

公开(公告)日：2009-07-21

申请号：US11011130

申请日：2004-12-15

Applicant: Kun-Chih Wang

Inventor： Kun-Chih Wang

IPC: C03B40/00

CPC classification number: C03C17/001 ,  C03B11/086 ,  C03B27/02 ,  C03C2218/15 ,  Y02P40/57

Abstract: A method for making high precision hard film coating on a mold core comprises the following steps of: (a) providing a mold jig (200, 300) and a mold core (208, 308); (b) defining a through hole (206, 364) of a first inner diameter in the mold jig; (c) forming a rim (254, 354) of a second inner diameter on the inner side of the through hole, the second inner diameter being smaller than the first inner diameter; (d) configuring the mold core into a mold core including a body (212, 312) of a first external diameter and a top portion (250, 350) of a second external diameter, the second external diameter being smaller than the first external diameter to define a shoulder (252, 352) between the body and the top portion, the first external diameter being substantially equal to the first inner diameter and larger than the second inner diameter, the second external diameter being substantially equal to or smaller than the second inner diameter; and (e) coreing the mold core into the through hole of the mold jig from the bottom, the shoulder of the mold core engaging with the rim, the upper surface of the top portion of the mold core being substantially flush with the upper surface of the mold jig, and a groove (256, 356) being defined between the inner side of the through hole and the outer side of the top portion of the mold core. A device for performing this method is also disclosed.

Abstract translation: 在模芯上制造高精度硬膜的方法包括以下步骤：（a）提供模具夹具（200,300）和模芯（208,308）; （b）在所述模具夹具中限定第一内径的通孔（206,364）; （c）在所述通孔的内侧上形成第二内径的边缘（254,354），所述第二内径小于所述第一内径; （d）将模芯配置成包括第一外径的主体（212,312）和第二外径的顶部（250,350）的模芯，所述第二外径小于所述第一外径 以限定主体和顶部之间的肩部（252,352），第一外径基本上等于第一内径并且大于第二内径，第二外径基本上等于或小于第二内径 内径; 和（e）将模芯从底部夹入模具夹具的通孔中，模芯的凸缘与边缘接合，模芯顶部的上表面基本上与 模具夹具和在通孔的内侧和模芯的顶部的外侧之间限定的凹槽（256,356）。 还公开了一种用于执行该方法的装置。

公开(公告)号：US07372168B2

公开(公告)日：2008-05-13

申请号：US11379572

申请日：2006-04-21

Applicant: Bing-Chang Wu ,  Kun-Chih Wang ,  Mei-Ling Chao ,  Shiao-Shien Chen

Inventor： Bing-Chang Wu ,  Kun-Chih Wang ,  Mei-Ling Chao ,  Shiao-Shien Chen

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L24/05 ,  H01L23/53228 ,  H01L2224/02166 ,  H01L2224/05093 ,  H01L2224/05095 ,  H01L2224/05624 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/05042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00014

Abstract: A semiconductor chip capable of implementing wire bonding over active circuits (BOAC) is provided. The semiconductor chip includes a bonding pad structure which includes a bondable metal pad, a top interconnection metal layer, a stress-buffering dielectric, and at least a first via plug between the bondable metal pad and the top interconnection metal layer. The semiconductor chip also includes at least an interconnection metal layer, at least a second via plug between the interconnection metal layer and the bonding pad structure, and an active circuit situated underneath the bonding pad structure on a semiconductor substrate.

Abstract translation: 提供了能够通过有源电路（BOAC）实现引线键合的半导体芯片。 该半导体芯片包括一个焊盘结构，该焊盘结构包括一个可粘合的金属焊盘，一个顶部互连金属层，一个应力缓冲电介质，以及至少一个可焊接的金属焊盘和顶部互连金属层之间的第一通孔塞。 半导体芯片还至少包括互连金属层，在互连金属层和焊盘结构之间的至少第二通孔插塞以及位于半导体衬底上的焊盘结构下方的有源电路。

公开(公告)号：US07208837B2

公开(公告)日：2007-04-24

申请号：US10907959

申请日：2005-04-22

Applicant: Kun-Chih Wang ,  Bing-Chang Wu

Inventor： Kun-Chih Wang ,  Bing-Chang Wu

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L24/05 ,  H01L23/53238 ,  H01L2224/02166 ,  H01L2224/05093 ,  H01L2224/05095 ,  H01L2224/05624 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  Y10T428/24917 ,  Y10T428/265 ,  H01L2924/00014

Abstract: A reinforced bonding pad structure includes a bondable metal layer defined on a stress-buffering dielectric layer, and an intermediate metal layer damascened in a first inter-metal dielectric (IMD) layer disposed under the stress-buffering dielectric layer. The intermediate metal layer is situated directly under the bondable metal layer and is electrically connected to the bondable metal layer with a plurality of via plugs integrated with the bondable metal layer. A metal frame is damascened in a second IMD layer under the first IMD layer. The metal frame is situated directly under the intermediate metal layer for counteracting mechanical stress exerted on the bondable metal layer during bonding, when the thickness of said stress-buffering dielectric layer is greater than 2000 angstroms, the damascened metal frame may be omitted. An active circuit portion including active circuit components of the integrated circuit is situated directly under the metal frame.

公开(公告)号：US20070010122A1

公开(公告)日：2007-01-11

申请号：US11439117

申请日：2006-05-24

Applicant: Kun-Chih Wang

Inventor： Kun-Chih Wang

IPC: H01R13/627 ,  B29D11/00

CPC classification number: B29D11/0073

Abstract: A miniaturized lens assembly includes an image-capturing unit, a lens unit, and a binding layer. The image-capturing unit includes an image-capturing member. The lens unit includes an image-projecting portion for projecting an image along an optical axis to the image-capturing member. The binding layer extends around the optical axis, and binds the image-capturing unit to the lens unit. The binding layer includes a photosensitive polymeric material and spaces apart the lens unit and the image-capturing unit. A method for making the miniaturized lens assembly is also disclosed.

Abstract translation: 小型化透镜组件包括图像捕获单元，透镜单元和粘结层。 图像捕获单元包括图像捕获构件。 透镜单元包括用于将图像沿着光轴投射到图像捕获构件的图像投影部分。 绑定层围绕光轴延伸，并且将图像捕获单元绑定到透镜单元。 粘合层包括光敏聚合物材料，并且使透镜单元和图像捕获单元分开。 还公开了一种用于制造小型化透镜组件的方法。

公开(公告)号：US20060026995A1

公开(公告)日：2006-02-09

申请号：US11152277

申请日：2005-06-13

Applicant: Kun-Chih Wang

Inventor： Kun-Chih Wang

IPC: C03B11/08

CPC classification number: C03B11/086 ,  C03B2215/12 ,  C03B2215/26 ,  C03B2215/31 ,  C03B2215/32 ,  C03B2215/34 ,  C23C16/0272 ,  C23C16/26

Abstract: A molding core includes: a core body having an article-shaping surface; and a hard coating formed on the article-shaping surface of the core body and including a diamond-like carbon film that includes carbon, nitrogen, and at least one bonding-enhancing element which is selected from silicon, titanium, aluminum, tungsten, tantalum, chromium, zirconium, vanadium, niobium, hafnium, and boron, and which forms covalence bonding with the carbon and the nitrogen.

Abstract translation: 成形芯包括：具有制品成形表面的芯体; 以及形成在芯体的制品成形表面上的硬质涂层，并且包括包含碳，氮和至少一种选自硅，钛，铝，钨，钽的粘合增强元素的类金刚石碳膜 ，铬，锆，钒，铌，铪和硼，并且与碳和氮键合形成共价。

公开(公告)号：US06900541B1

公开(公告)日：2005-05-31

申请号：US10708109

申请日：2004-02-10

Applicant: Kun-Chih Wang ,  Bing-Chang Wu

Inventor： Kun-Chih Wang ,  Bing-Chang Wu

IPC: H01L23/485 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L24/05 ,  H01L2224/02166 ,  H01L2224/05093 ,  H01L2224/05095 ,  H01L2224/05624 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041

Abstract: An integrated circuit including a reinforced bonding pad structure is disclosed. The reinforced bonding pad structure includes a bondable metal layer defined on a stress-buffering dielectric layer, and an intermediate metal layer damascened in a first inter-metal dielectric (IMD) layer disposed under the stress-buffering dielectric layer. The intermediate metal layer is situated directly under the bondable metal layer and is electrically connected to the bondable metal layer with a plurality of via plugs integrated with the bondable metal layer. At least one metal frame is damascened in a second IMD layer under the first IMD layer. The metal frame is situated directly under the intermediate metal layer for counteracting mechanical stress exerted on the bondable metal layer during bonding. An active circuit portion including active circuit components of the integrated circuit is situated directly under the metal frame of the reinforced bonding pad structure.

Abstract translation: 公开了一种包括加固焊盘结构的集成电路。 强化焊盘结构包括限定在应力缓冲电介质层上的可粘合金属层和在应力缓冲介电层下设置的第一金属间电介质（IMD）层中的中间金属层。 中间金属层位于可接合的金属层的正下方，并且与可结合金属层电连接，多个通孔与可结合的金属层集成。 在第一IMD层下面的第二IMD层中至少一个金属框架被镶嵌。 金属框架位于中间金属层的正下方，用于抵抗在粘合期间施加在可粘合金属层上的机械应力。 包括集成电路的有源电路部件的有源电路部分位于加固焊盘结构的金属框架的正下方。

公开(公告)号：US20050110120A1

公开(公告)日：2005-05-26

申请号：US10707222

申请日：2003-11-27

Applicant: Kun-Chih Wang ,  Paul Chen ,  Jui-Meng Jao ,  Chien-Li Kuo

Inventor： Kun-Chih Wang ,  Paul Chen ,  Jui-Meng Jao ,  Chien-Li Kuo

IPC: H01L21/301 ,  H01L21/78 ,  H01L23/544 ,  H01L23/58 ,  H01L29/06

CPC classification number: H01L22/34 ,  H01L21/78 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A wafer scribe line structure is provided. A plurality of lump patterns is set up to fill the entire scribe line area so that the amount of stress the wafer is subjected to during a dicing process is reduced, thereby reducing the probability of having a delamination at the interface of wafer layers. Moreover, the lump patterns can be formed simultaneously with metal interconnects in a metal interconnect process.

Abstract translation: 提供晶片划线结构。 设置多个块状图案以填充整个划线区域，使得在切割处理期间晶片受到的应力量减小，从而降低在晶片层的界面处发生分层的可能性。 此外，块状图案可以在金属互连工艺中与金属互连同时形成。

公开(公告)号：US6048796A

公开(公告)日：2000-04-11

申请号：US211891

申请日：1998-12-15

Applicant: Kun-Chih Wang ,  Wen-Yi Hsieh ,  Yimin Huang ,  Chih-Chien Liu ,  Water Lur

Inventor： Kun-Chih Wang ,  Wen-Yi Hsieh ,  Yimin Huang ,  Chih-Chien Liu ,  Water Lur

IPC: H01L21/768 ,  H01L21/00

CPC classification number: H01L21/7684 ,  H01L21/76829

Abstract: A method is described for manufacturing a multilevel metal interconnects. The method comprises the steps of providing a substrate and then forming a wire on the substrate. A dielectric layer is formed on the substrate and the wire and a protective layer is formed on the dielectric layer. An opening is formed by patterning the protective layer and the dielectric layer and a barrier layer is formed on the protective layer and in the opening. A copper layer is formed on the barrier layer and fills the opening. A portion of the copper layer and the barrier layer are removed by chemical-mechanical polishing.

Abstract translation: 描述了一种用于制造多层金属互连的方法。 该方法包括以下步骤：提供衬底，然后在衬底上形成线。 在基板和导线上形成电介质层，在电介质层上形成保护层。 通过图案化保护层和电介质层形成开口，并且在保护层和开口中形成阻挡层。 在阻挡层上形成铜层并填充开口。 通过化学机械抛光去除铜层和阻挡层的一部分。

公开(公告)号：US07304385B2

公开(公告)日：2007-12-04

申请号：US11422330

申请日：2006-06-06

Applicant: Kun-Chih Wang ,  Bing-Chang Wu

Inventor： Kun-Chih Wang ,  Bing-Chang Wu

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L24/05 ,  H01L23/53238 ,  H01L2224/02166 ,  H01L2224/05093 ,  H01L2224/05095 ,  H01L2224/05624 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  Y10T428/24917 ,  Y10T428/265 ,  H01L2924/00014

Abstract: A reinforced bonding pad structure includes a bondable metal layer defined on a stress-buffering dielectric layer, and an intermediate metal layer damascened in a first inter-metal dielectric (IMD) layer disposed under the stress-buffering dielectric layer. The intermediate metal layer is situated directly under the bondable metal layer and is electrically connected to the bondable metal layer with a plurality of via plugs integrated with the bondable metal layer. A metal frame is damascened in a second IMD layer under the first IMD layer. The metal frame is situated directly under the intermediate metal layer for counteracting mechanical stress exerted on the bondable metal layer during bonding, when the thickness of said stress-buffering dielectric layer is greater than 2000 angstroms, the damascened metal frame may be omitted. An active circuit portion including active circuit components of the integrated circuit is situated directly under the metal frame.

Abstract translation: 强化焊盘结构包括限定在应力缓冲电介质层上的可粘合金属层和在应力缓冲介质层下设置的第一金属间电介质（IMD）层中的中间金属层。 中间金属层位于可接合的金属层的正下方，并且与可结合金属层电连接，多个通孔与可结合的金属层集成。 在第一IMD层下面的第二IMD层中金属框架被镶嵌。 金属框架直接位于中间金属层的正下方，用于抵抗在接合期间施加在可接合金属层上的机械应力，当所述应力缓冲介电层的厚度大于2000埃时，可以省略镶嵌的金属框架。 包括集成电路的有源电路部件的有源电路部分位于金属框架的正下方。

公开(公告)号：US07147454B2

公开(公告)日：2006-12-12

申请号：US10905802

申请日：2005-01-21

Applicant: Kun-Chih Wang

Inventor： Kun-Chih Wang

IPC: B29D11/00

CPC classification number: B29C43/021 ,  B29C33/303 ,  B29C43/36 ,  B29C2043/3618 ,  B29D11/00413 ,  B29L2011/0016 ,  C03B11/08 ,  C03B2215/03 ,  C03B2215/60 ,  C03B2215/65 ,  C03B2215/72 ,  Y10S425/808 ,  Y10S425/812

Abstract: An optical lens molding apparatus includes a cylindrical mold, a first mold core, a second mold core and a correctional ring. The first and the second mold core have a columnar shape and are disposed inside the cylindrical mold to form a cavity. Furthermore, the first and the second mold core have a planar portion at the end surface facing the cavity. The correctional ring is disposed on the planar portion of the second mold core. The correction ring corrects any face tilting of the molded optical lens due to the tilting of the first mold core. The present invention also provides a precision molding apparatus for forming precision parts.

Abstract translation: 光学透镜成型装置包括圆柱形模具，第一模芯，第二模芯和校正环。 第一和第二模芯具有圆柱形状并且设置在圆柱形模具内以形成空腔。 此外，第一和第二模芯在端面处具有面向空腔的平面部分。 校正环设置在第二模芯的平面部分上。 由于第一模芯的倾斜，校正环校正模制的光学透镜的任何表面倾斜。 本发明还提供一种用于形成精密部件的精密成形装置。