摘要:
A single crystal is grown in accordance with a Czochralski method such that the time for passing through a temperature zone of 1150-1080.degree. C. is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1150-1080.degree. C. in the temperature distribution is 2.0 cm or less. Alternatively, the single crystal is grown such that the time for passing through a temperature zone of 1250-1200.degree. C. is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1250-1200.degree. C. in the temperature distribution is 2.0 cm or less. This method decreases both the density and size of so-called grown-in defects such as FPD (100 defects/cm.sup.2 or less), LSTD, and COP (10 defects/cm.sup.2 or less) to thereby enable efficient production of a single crystal having an excellent good chip yield (80% or greater) in terms of oxide dielectric breakdown voltage characteristics.
摘要:
There is disclosed a Czochralski method in which a seed crystal in contact with material melt is pulled, while being rotated, so as to grow a monocrystal, and a part of the crystal being grown is mechanically held during the pulling operation. The crystal is mechanically held in such a way that the weight W(kg) of the crystal satisfies the following Formula (1):W
摘要:
A puller and method for crystal growth using the Czochralski technique in which a temperature profile and a history of thermal conditions of a growing crystal is controllable with ease and a good accuracy, which puller comprises a crucible containing raw material, heater for melting by heating the raw material and a heat insulating cylinder surrounding them, the heat insulating cylinder being cross-sectionally divided by an annular separation gap or gaps into parts and which method is applicable to growth of such a single crystal as of silicon, germanium, GaP, GaAs or InP in the puller. Methods for controlling a temperature profile and a history of thermal conditions of a growing crystal using the czochralski technique in the puller.
摘要:
A method of producing a silicon single crystal by the floating-zone method, comprising the steps of: providing a polysilicon rod having an average grain length of 10 to 1000 .mu.m; heating a portion of the polysilicon rod to form a molten zone while applying a magnetic field of 300 to 1000 gauss to the molten zone; and passing the molten zone through the length of the polysilicon rod thereby the polysilicon rod is converted into a silicon single crystal ingot through a one-pass zoning of the floating zone method. An apparatus for reducing the method into practice is also described.
摘要:
To provide a balloon catheter having a flexible and highly expandable balloon so as to prevent the inner wall of the blood vessel from being damaged by the passage of the balloon. In a balloon catheter aimed to be stayed in a blood vessel and to be used mainly for the occlusion of a blood vessel, the balloon comprises a material selected from materials which have sufficient flexibility for preventing a blood vessel blocking operation from giving a damage to a vascular wall, have sufficient elasticity with its shrink characteristics when removing the catheter, and prevent a thrombus due to a direct contact to blood; and a maximum stretching of the material of said balloon in the state stayed in the blood vessel is defined so as to exceed a maximum stretching of said balloon itself.
摘要:
A holding jig for such a preform formed of a synthetic resin into a bottomed cylindrical shape as is to be assembled by inserting a mouth cylinder portion to an insertion limit into the leading end portion of a cylindrical jig body having a pin inserting bore formed therethrough at its center for a drawing pin to be inserted thereinto. The holding jig comprises a support portion disposed in the inner circumference of the leading end portion of the jig body at a position to confront a peripheral projecting ridge of the mouth cylinder portion, for making such external contact with the outer circumference of the peripheral projecting ridge as to insert and extract of the mouth cylinder portion, thereby to hold the assembled posture of the preform. The holding jig can hold the preform stably in a predetermined posture thereby to achieve a high productivity for the biaxial orientation blow-molded bottle.
摘要:
A liquid crystal display of the present invention is adapted to perform initialization by inputting voltages with different polarities to two pixel electrodes (23á, 23â) adjacent in front and back direction. It is preferable that in the two pixel electrodes (23á, 23â) adjacent in front and back direction, the pixel electrode (23á) located on back side is provided with a first protrusion (232á) at a front side and back direction, the pixel electrode (231â) adjacent in front and back is provided with a second protrusion (23â) located on front side is provided with a second a second protrusion (234â) on a back side edge (233â)thereof.
摘要:
An active matrix liquid crystal display element capable of reducing flicker comprises: a plurality of source lines; a plurality of gate lines arranged so as to intersect the plurality of source lines in a plan view, for transmitting a gate signal; a plurality of pixels defined by the plurality of source lines and the plurality of gate lines, constituting an image display plane; a pixel electrode provided for every pixel; an opposed electrode facing the pixel electrode across a liquid crystal layer; a storage capacitor for holding a voltage applied between its corresponding pixel electrode and the opposed electrode; and a pixel transistor having a source electrode, a drain electrode and a gate electrode which are connected to a corresponding one of the source lines, a corresponding one of the pixel electrodes and a corresponding one of the gate lines respectively, and being turned ON or OFF by the gate signal, wherein an index B given by B=Lst/Lgd is equal to or greater than 7, where a periphery length of the storage capacitor is Lst and a periphery length of a gate electrode to pixel electrode capacitor of the pixel transistor is Lgd.
摘要:
A liquid crystal display comprises an array substrate in which a common electrode, a pixel electrode, a scanning signal line, a video signal line and a semiconductor switching element are provided, an opposed substrate, and a liquid crystal layer interposed between the array substrate and opposed substrate. The line width of at least either the common electrode or the pixel electrode is larger than the distance between the common electrode and the pixel electrode. The film thickness of at least one of the common electrode and the pixel electrode is larger than the thickness of at least either the scanning signal line or the video signal line. As a result, an in-plane electric field liquid crystal display having a wide viewing angle, high-speed response, and high image quality such as high luminance is provided.
摘要:
Disclosed is a liquid crystal display comprising: a pair of opposed substrates; a liquid crystal layer disposed between the pair of substrates, the liquid crystal layer having a display alignment state and a non-display alignment state which differ from each other and being subjected to an initialization process so as to be changed from the non-display alignment state to the display alignment state before an image is displayed; storage capacitor electrodes provided on one of the pair of substrates; pixel electrodes provided so as to overlap with the storage capacitor electrodes with an insulator interposed therebetween and disposed between the storage capacitor electrode and the liquid crystal layer, the pixel electrode having a lack portion in a region overlapping with the storage capacitor electrode; and drive means for generating potential difference between the storage capacitor electrode and the pixel electrode to thereby perform the initialization process.