摘要:
In a display region of an active matrix substrate, an interlayer insulating film made of a photosensitive organic insulating film, an insulating film different from the interlayer insulating film, and a plurality of pixel electrodes formed on a surface of the interlayer insulating film are provided. In a non-display region of the active matrix substrate, a lead line extended from the display region is formed. In a formation region for a sealing member, the interlayer insulating film is removed, the insulating film is provided to cover part of the lead line, and the sealing member is formed directly on a surface of the insulating film.
摘要:
A method for fabricating a display device includes the steps of forming a multilayer structure in which a first conducting film and a second conducting film are stacked in this order, removing part of the second conducting film and forming a contact region in which the first conducting film does not overlap with the second conducting film, thereby forming the electrode portion from the multilayer structure, forming a planarized film made of a photosensitive material on the substrate on which the electrode portion is formed to cover the electrode portion, thereby forming a contact hole located inside the contact region and passing through the planarized film, and forming a pixel electrode on a surface of the planarized film to cover part of the first conducting film located inside the contact hole and exposed from the planarized film.
摘要:
The present invention provides a highly reliable circuit board that includes TFTs a semiconductor layer of which is formed from an oxide semiconductor; and low-resistance aluminum wirings. The circuit board of the present invention includes an oxide semiconductor layer; source wirings; and drain wirings, wherein each of the source wirings and the drain wirings includes a portion in contact with the semiconductor layer, portions of the source wirings in contact with the semiconductor layer and respective portions of the drain wirings in contact with the semiconductor layer spacedly facing each other, and the source wirings and the drain wirings are formed by stacking a layer formed from a metal other than aluminum and a layer containing aluminum.
摘要:
The present invention provides: a vertical alignment liquid crystal display device using comb electrodes for voltage application to liquid crystals, the device being capable of reducing alignment defects of liquid crystals occurring at tips of electrodes, having a high contrast and white brightness, and being excellent in display properties; and a method for producing the same. The present invention is a method for producing a liquid crystal display device comprising a pair of substrates, a liquid crystal layer between the substrates, and an electrode for voltage application in the liquid crystal layer, the method comprising the steps of: resist pattern formation in which a resist film formed on a conductive film is exposed through a photomask; and an electrode pattern formation in which the conductive film is etched through the resist pattern, the photomask having a light-shielding or light-transmitting pattern including a core portion and a plurality of branch portions extending from the core portion, the branch portions each having a wide part at the tip.
摘要:
A liquid crystal display device according to the present invention includes a vertical alignment type liquid crystal layer 32. Each pixel electrode thereof 12 has a plurality of unit electrode portions 12a, each of which has a conductive film and slits 13 that have been cut through the conductive film. When a predetermined voltage is applied between the pixel electrode and a counter electrode, a liquid crystal domain is produced in association with each unit electrode portion and liquid crystal molecules in the liquid crystal domain come to have a substantially radially tilting alignment state. As a result, the device of the present invention achieves a wide viewing angle and a fast response characteristic.
摘要:
An oxymethylene copolymer composition which comprises an intimate mixture containing:(A) 100 parts by weight of an oxymethylene copolymer,(B) 0.01 to 2 parts by weight of an ester composed of a polyhydric alcohol having 2 to 10 carbon atoms and a higher fatty acid having 22 to 32 carbon atoms, and(C) 0.01 to 3 parts by weight of an alkaline earth metal salt of a fatty acid having 12 to 35 carbon atoms.
摘要:
An acetal resin composition comprising:(A) 100 parts by weight of an acetal resin,(B) 0.01 to 5 parts by weight of a terminal-etherified polyalkylene glycol of the formula (I)R.sup.1 --O--(--R.sup.2 --O--).sub.m --R.sup.3wherein R.sup.1 is a hydrogen atom, an aliphatic hydrocarbon group having 1 to 7 carbon atoms, an aryl group or an aralkyl group, R.sup.2 is an alkylene group having 2 to 3 carbon atoms, R.sup.3 is an aliphatic hydrocarbon group having 1 to 7 carbon atoms, an aryl group or an aralkyl group, and m is a number of at least 20, and(C) 0.01 to 2 parts by weight of an ester from a polyhydric alcohol having 2 to 10 carbon atoms and a higher fatty acid having 22 to 32 carbon atoms. This acetal resin composition has highly improved mold releasability when injection-molded without any substantial impairment of mechanicla properties and thermal stability inherent to an acetal resin and gives precision molded articles having little molding strain.
摘要:
A semiconductor device (1000) includes a thin film transistor having a gate line (3a), source and drain lines (13as, 13ad), and an island-like oxide semiconductor layer (7), and a capacitor element (105) having a first electrode (3b) formed from the same conductive film as the gate line (3s), a second electrode (13b) formed from the same conductive film as the source line (13as), and a dielectric layer positioned between the first electrode and the second electrode. A gate insulating film (5) has a layered structure including a first insulating layer (5A) containing an oxide and a second insulating layer (5B) disposed on the side closer to the gate electrode closer than the first insulating film and having a higher dielectric constant than the first insulating film, the layered structure being in contact with the oxide semiconductor layer (7). The dielectric layer includes the second insulating film (5B) but does not include the first insulating film (5A). Accordingly, the deterioration of the oxide semiconductor layer due to oxygen deficiency can be suppressed without reducing the capacitance value of the capacitor element).
摘要:
A liquid crystal display panel includes: a plurality of switching elements each provided on a transparent substrate (10) for each sub-pixel and having a drain electrode (14b); an interlayer insulating film (17) provided to cover the switching elements and including an inorganic insulating film (15) and an organic insulating film (16) sequentially layered; a capacitor electrode (18a) provided on the interlayer insulating film (17); a capacitor insulating film (19) provided to cover the capacitor electrode (18a); a plurality of pixel electrodes (20a) which are provided on the capacitor insulating film (19) and face the capacitor electrode (18a); and a connection region (R) at which the drain electrode (14b) and the capacitor electrode (18a) overlap each other via the inorganic insulating film (15) exposed from the organic insulating film (16).
摘要:
Transflective-type and reflection-type liquid crystal display devices having a high image quality are provided at low cost.A liquid crystal display device according to the present invention is a liquid crystal display device having a reflection region for reflecting incident light toward a display surface, the reflection region including a Cs metal layer (metal layer), a gate insulating layer formed on the Cs metal layer, a semiconductor layer formed on the gate insulating layer, and a reflective layer formed on the semiconductor layer. On the surface of the reflective layer, a first recess and a second recess located inside the first recess are formed. The Cs metal layer and the semiconductor layer each have an aperture, and one of the first recess and the second recess is constituted by the aperture of the Cs metal layer, and the other is constituted by the aperture of the semiconductor layer.