公开(公告)号：US20130181217A1

公开(公告)日：2013-07-18

申请号：US13823872

申请日：2011-09-30

申请人： Yoshihito Hara ,  Yukinobu Nakata

发明人： Yoshihito Hara ,  Yukinobu Nakata

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L27/124 ,  G02F1/13458 ,  G02F1/136227 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1288 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/7869 ,  H05B33/02

摘要： A semiconductor device (100) according to the present invention includes a thin film transistor (10) having a gate electrode (62a), a first insulating layer (64), an oxide semiconductor layer (66a), a protection layer (68), a source electrode (72as), and a second insulating layer (74). A first connecting portion (30) includes a lower metal layer (72c), an upper metal layer (72c), and an insulating layer (74). A second connecting portion (40) includes a lower metal layer (72d) and an upper conductive layer (17d). A region in which the lower metal layer (72d) is in contact with the upper conductive layer (17d), and a region in which an insulating layer (74) made of a same material as the first insulating layer and a semiconductor layer (66d) made of a same material as the oxide semiconductor layer (66a) are stacked in between the lower metal layer (72d) and the upper conductive layer (17d), are formed in the second connecting portion (40). As a result, a semiconductor device with a higher performance can be provided with a high production efficiency.

公开(公告)号：US20130153904A1

公开(公告)日：2013-06-20

申请号：US13819352

申请日：2011-08-26

申请人： Jun Nishimura ,  Yukinobu Nakata ,  Yoshihito Hara

发明人： Jun Nishimura ,  Yukinobu Nakata ,  Yoshihito Hara

IPC分类号： H01L27/04 ,  H01L21/82

CPC分类号： H01L27/04 ,  G02F1/133345 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/1368 ,  H01L21/82 ,  H01L27/1225 ,  H01L27/1255

摘要： A semiconductor device (1000) includes a thin film transistor having a gate line (3a), source and drain lines (13as, 13ad), and an island-like oxide semiconductor layer (7), and a capacitor element (105) having a first electrode (3b) formed from the same conductive film as the gate line (3s), a second electrode (13b) formed from the same conductive film as the source line (13as), and a dielectric layer positioned between the first electrode and the second electrode. A gate insulating film (5) has a layered structure including a first insulating layer (5A) containing an oxide and a second insulating layer (5B) disposed on the side closer to the gate electrode closer than the first insulating film and having a higher dielectric constant than the first insulating film, the layered structure being in contact with the oxide semiconductor layer (7). The dielectric layer includes the second insulating film (5B) but does not include the first insulating film (5A). Accordingly, the deterioration of the oxide semiconductor layer due to oxygen deficiency can be suppressed without reducing the capacitance value of the capacitor element).

摘要翻译： 半导体器件（1000）包括具有栅极线（3a），源极和漏极线（13as，13ad）和岛状氧化物半导体层（7）的薄膜晶体管，以及电容器元件（105），其具有 由与栅极线（3s）相同的导电膜形成的第一电极（3b），由与源极线（13as）相同的导电膜形成的第二电极（13b）以及位于第一电极 第二电极。 栅极绝缘膜（5）具有层叠结构，该层叠结构具有包含氧化物的第一绝缘层（5A）和位于比第一绝缘膜更靠近栅电极的一侧的第二绝缘层（5B），并且具有较高的电介质 与第一绝缘膜恒定，层状结构与氧化物半导体层（7）接触。 电介质层包括第二绝缘膜（5B），但不包括第一绝缘膜（5A）。 因此，可以抑制氧缺陷导致的氧化物半导体层的劣化，而不会降低电容器元件的电容值）。

公开(公告)号：US08633481B2

公开(公告)日：2014-01-21

申请号：US13819352

申请日：2011-08-26

申请人： Jun Nishimura ,  Yukinobu Nakata ,  Yoshihito Hara

发明人： Jun Nishimura ,  Yukinobu Nakata ,  Yoshihito Hara

IPC分类号： H01L29/10 ,  H01L29/12

CPC分类号： H01L27/04 ,  G02F1/133345 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/1368 ,  H01L21/82 ,  H01L27/1225 ,  H01L27/1255

摘要： A semiconductor device (1000) includes a thin film transistor having a gate line (3a), source and drain lines (13as, 13ad), and an island-like oxide semiconductor layer (7), and a capacitor element (105) having a first electrode (3b) formed from the same conductive film as the gate line (3s), a second electrode (13b) formed from the same conductive film as the source line (13as), and a dielectric layer positioned between the first electrode and the second electrode. A gate insulating film (5) has a layered structure including a first insulating layer (5A) containing an oxide and a second insulating layer (5B) disposed on the side closer to the gate electrode closer than the first insulating film and having a higher dielectric constant than the first insulating film, the layered structure being in contact with the oxide semiconductor layer (7). The dielectric layer includes the second insulating film (5B) but does not include the first insulating film (5A). Accordingly, the deterioration of the oxide semiconductor layer due to oxygen deficiency can be suppressed without reducing the capacitance value of the capacitor element).

摘要翻译： 半导体器件（1000）包括具有栅极线（3a），源极和漏极线（13as，13ad）和岛状氧化物半导体层（7）的薄膜晶体管，以及电容器元件（105），其具有 由与栅极线（3s）相同的导电膜形成的第一电极（3b），由与源极线（13as）相同的导电膜形成的第二电极（13b）以及位于第一电极 第二电极。 栅极绝缘膜（5）具有层叠结构，该层叠结构具有包含氧化物的第一绝缘层（5A）和位于比第一绝缘膜更靠近栅电极的一侧的第二绝缘层（5B），并且具有较高的电介质 与第一绝缘膜恒定，层状结构与氧化物半导体层（7）接触。 电介质层包括第二绝缘膜（5B），但不包括第一绝缘膜（5A）。 因此，可以抑制氧缺陷导致的氧化物半导体层的劣化，而不会降低电容器元件的电容值）。

公开(公告)号：US20130235292A1

公开(公告)日：2013-09-12

申请号：US13884704

申请日：2012-01-24

申请人： Yoshihito Hara ,  Yukinobu Nakata

发明人： Yoshihito Hara ,  Yukinobu Nakata

IPC分类号： H01L33/00 ,  G02F1/1343

CPC分类号： H01L33/0095 ,  G02F1/134363 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136259 ,  G02F2001/136268 ,  G02F2201/508 ,  H01L27/1255 ,  H01L2924/0002 ,  H01L2924/00

摘要： A liquid crystal display panel includes: a plurality of switching elements each provided on a transparent substrate (10) for each sub-pixel and having a drain electrode (14b); an interlayer insulating film (17) provided to cover the switching elements and including an inorganic insulating film (15) and an organic insulating film (16) sequentially layered; a capacitor electrode (18a) provided on the interlayer insulating film (17); a capacitor insulating film (19) provided to cover the capacitor electrode (18a); a plurality of pixel electrodes (20a) which are provided on the capacitor insulating film (19) and face the capacitor electrode (18a); and a connection region (R) at which the drain electrode (14b) and the capacitor electrode (18a) overlap each other via the inorganic insulating film (15) exposed from the organic insulating film (16).

摘要翻译： 液晶显示面板包括：多个开关元件，每个开关元件分别设置在每个子像素的透明基板上，并具有漏极电极; 设置成覆盖开关元件并且依次层叠有无机绝缘膜（15）和有机绝缘膜（16）的层间绝缘膜（17） 设置在层间绝缘膜（17）上的电容器电极（18a）; 设置为覆盖电容器电极（18a）的电容器绝缘膜（19）; 多个像素电极（20a），设置在所述电容绝缘膜（19）上并面对所述电容器电极（18a）; 以及通过从有机绝缘膜（16）露出的无机绝缘膜（15）使漏电极（14b）和电容电极（18a）重叠的连接区域（R）。

公开(公告)号：US08829517B2

公开(公告)日：2014-09-09

申请号：US13810944

申请日：2011-07-14

申请人： Yoshihito Hara ,  Yukinobu Nakata

发明人： Yoshihito Hara ,  Yukinobu Nakata

IPC分类号： H01L29/10 ,  H01L29/786 ,  H01L27/12 ,  G02F1/1345 ,  G02F1/1362 ,  H01L27/32 ,  H01L29/66

CPC分类号： H01L29/78693 ,  G02F1/13458 ,  G02F1/136227 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3276 ,  H01L29/66969

摘要： A TFT substrate (20a) includes: an insulating substrate (10a); a plurality of source terminals (15) located on the insulating substrate (10a); and a first terminal cover (24) covering part of each of the source terminals (15) and made of an oxide semiconductor. The first terminal cover (24) is removed in a region R between adjacent ones of the source terminals (15).

摘要翻译： TFT基板（20a）包括：绝缘基板（10a）; 位于绝缘基板（10a）上的多个源极端子（15）; 以及覆盖每个源极端子（15）的一部分并由氧化物半导体制成的第一端子盖（24）。 在相邻的源极端子（15）之间的区域R中去除第一端子盖（24）。

公开(公告)号：US20130302929A1

公开(公告)日：2013-11-14

申请号：US13979302

申请日：2012-01-25

申请人： Yoshihito Hara ,  Yukinobu Nakata

发明人： Yoshihito Hara ,  Yukinobu Nakata

IPC分类号： H01L33/08

CPC分类号： H01L33/08 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/1345 ,  G02F2001/136231 ,  G02F2201/501

摘要： In a display region of an active matrix substrate, an interlayer insulating film made of a photosensitive organic insulating film, an insulating film different from the interlayer insulating film, and a plurality of pixel electrodes formed on a surface of the interlayer insulating film are provided. In a non-display region of the active matrix substrate, a lead line extended from the display region is formed. In a formation region for a sealing member, the interlayer insulating film is removed, the insulating film is provided to cover part of the lead line, and the sealing member is formed directly on a surface of the insulating film.

摘要翻译： 在有源矩阵基板的显示区域中，设置由感光性有机绝缘膜构成的层间绝缘膜，与层间绝缘膜不同的绝缘膜，以及形成在层间绝缘膜的表面上的多个像素电极。 在有源矩阵基板的非显示区域中，形成从显示区域延伸的引线。 在密封构件的形成区域中，除去层间绝缘膜，设置绝缘膜以覆盖引线的一部分，并且密封构件直接形成在绝缘膜的表面上。

公开(公告)号：US20120307173A1

公开(公告)日：2012-12-06

申请号：US13578371

申请日：2011-02-16

申请人： Tetsuo Fujita ,  Yoshihito Hara ,  Yukinobu Nakata

发明人： Tetsuo Fujita ,  Yoshihito Hara ,  Yukinobu Nakata

IPC分类号： H01L33/36 ,  G02F1/136

CPC分类号： G02F1/136227 ,  G02F1/136286 ,  H01L27/1288

摘要： A method for fabricating a display device includes the steps of forming a multilayer structure in which a first conducting film and a second conducting film are stacked in this order, removing part of the second conducting film and forming a contact region in which the first conducting film does not overlap with the second conducting film, thereby forming the electrode portion from the multilayer structure, forming a planarized film made of a photosensitive material on the substrate on which the electrode portion is formed to cover the electrode portion, thereby forming a contact hole located inside the contact region and passing through the planarized film, and forming a pixel electrode on a surface of the planarized film to cover part of the first conducting film located inside the contact hole and exposed from the planarized film.

摘要翻译： 一种显示装置的制造方法，其特征在于，具有以下步骤：依次层叠第一导电膜和第二导电膜的多层结构，除去第二导电膜的一部分，形成第一导电膜 不与第二导电膜重叠，由此从多层结构形成电极部分，在其上形成有电极部分的基板上形成由感光材料制成的平坦化膜以覆盖电极部分，从而形成接触孔 在平坦化膜的表面上形成像素电极，以覆盖位于接触孔内部的第一导电膜的一部分，并从平坦化膜露出。

公开(公告)号：US20120298988A1

公开(公告)日：2012-11-29

申请号：US13522778

申请日：2010-10-25

申请人： Yoshihito Hara ,  Yukinobu Nakata

发明人： Yoshihito Hara ,  Yukinobu Nakata

IPC分类号： H01L33/08 ,  H01L21/336

CPC分类号： H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

摘要： The present invention provides a highly reliable circuit board that includes TFTs a semiconductor layer of which is formed from an oxide semiconductor; and low-resistance aluminum wirings. The circuit board of the present invention includes an oxide semiconductor layer; source wirings; and drain wirings, wherein each of the source wirings and the drain wirings includes a portion in contact with the semiconductor layer, portions of the source wirings in contact with the semiconductor layer and respective portions of the drain wirings in contact with the semiconductor layer spacedly facing each other, and the source wirings and the drain wirings are formed by stacking a layer formed from a metal other than aluminum and a layer containing aluminum.

摘要翻译： 本发明提供一种高度可靠的电路板，其包括其半导体层由氧化物半导体形成的TFT; 和低电阻铝布线。 本发明的电路板包括氧化物半导体层; 源线; 和漏极布线，其中源极布线和漏极布线中的每一个包括与半导体层接触的部分，源极布线的与半导体层接触的部分以及与半导体层间隔开的接触的漏极布线的相应部分 并且源极布线和漏极布线通过层叠由铝以外的金属和含有铝的层形成的层而形成。

公开(公告)号：US20120044446A1

公开(公告)日：2012-02-23

申请号：US13265924

申请日：2010-01-20

申请人： Yoshihito Hara ,  Yukinobu Nakata ,  Keizoh Watanabe

发明人： Yoshihito Hara ,  Yukinobu Nakata ,  Keizoh Watanabe

IPC分类号： G02F1/1343 ,  H01J9/24

CPC分类号： G02F1/134309 ,  G02F1/133707 ,  G02F1/1393

摘要： The present invention provides: a vertical alignment liquid crystal display device using comb electrodes for voltage application to liquid crystals, the device being capable of reducing alignment defects of liquid crystals occurring at tips of electrodes, having a high contrast and white brightness, and being excellent in display properties; and a method for producing the same. The present invention is a method for producing a liquid crystal display device comprising a pair of substrates, a liquid crystal layer between the substrates, and an electrode for voltage application in the liquid crystal layer, the method comprising the steps of: resist pattern formation in which a resist film formed on a conductive film is exposed through a photomask; and an electrode pattern formation in which the conductive film is etched through the resist pattern, the photomask having a light-shielding or light-transmitting pattern including a core portion and a plurality of branch portions extending from the core portion, the branch portions each having a wide part at the tip.

摘要翻译： 本发明提供一种使用梳状电极对液晶施加电压的垂直取向液晶显示装置，该装置能够减少电极前端发生的液晶的取向缺陷，具有高对比度和白色亮度，并且优异 在显示属性; 及其制造方法。 本发明是一种液晶显示装置的制造方法，其特征在于，包括一对基板，基板之间的液晶层和液晶层中的电压施加用电极，该方法包括以下步骤： 在导电膜上形成的抗蚀剂膜通过光掩模曝光; 以及通过抗蚀剂图案蚀刻导电膜的电极图案形成，所述光掩模具有包含芯部的光屏蔽或透光图案，以及从所述芯部延伸的多个分支部，所述分支部具有 很大一部分在提示。

公开(公告)号：US09087752B2

公开(公告)日：2015-07-21

申请号：US13823872

申请日：2011-09-30

申请人： Yoshihito Hara ,  Yukinobu Nakata

发明人： Yoshihito Hara ,  Yukinobu Nakata

IPC分类号： H01L27/12 ,  G02F1/1345 ,  H01L29/66 ,  H01L29/786 ,  H05B33/02 ,  G02F1/1362 ,  H01L27/32 ,  H01L29/417 ,  H01L29/423

CPC分类号： H01L27/124 ,  G02F1/13458 ,  G02F1/136227 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1288 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/7869 ,  H05B33/02

摘要： A semiconductor device (100) according to the present invention includes a thin film transistor (10) having a gate electrode (62a), a first insulating layer (64), an oxide semiconductor layer (66a), a protection layer (68), a source electrode (72as), and a second insulating layer (74). A first connecting portion (30) includes a lower metal layer (72c), an upper metal layer (72c), and an insulating layer (74). A second connecting portion (40) includes a lower metal layer (72d) and an upper conductive layer (17d). A region in which the lower metal layer (72d) is in contact with the upper conductive layer (17d), and a region in which an insulating layer (74) made of a same material as the first insulating layer and a semiconductor layer (66d) made of a same material as the oxide semiconductor layer (66a) are stacked in between the lower metal layer (72d) and the upper conductive layer (17d), are formed in the second connecting portion (40). As a result, a semiconductor device with a higher performance can be provided with a high production efficiency.

摘要翻译： 根据本发明的半导体器件（100）包括具有栅电极（62a），第一绝缘层（64），氧化物半导体层（66a），保护层（68）， 源电极（72as）和第二绝缘层（74）。 第一连接部分（30）包括下金属层（72c），上金属层（72c）和绝缘层（74）。 第二连接部分（40）包括下金属层（72d）和上导电层（17d）。 下部金属层（72d）与上部导电层（17d）接触的区域和由与第一绝缘层相同的材料构成的绝缘层（74）的区域和半导体层（66d） ）形成在下金属层（72d）和上导电层（17d）之间的与氧化物半导体层（66a）相同的材料制成的第二连接部分（40）。 结果，可以提供具有高生产效率的具有更高性能的半导体器件。